• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.160-164
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• 2008

Insulating and conducting 12CaO ${\cdot}7Al_2O_3$ (Cl2A7)-doped indium tin oxide (ITO) (ITO:Cl2A7 insulator and electride) thin films were deposited on glass substrates by an RF magnetron co-sputtering method with increasing number of insulating and conducting Cl2A7 target chips. The structural, electrical and optical properties of these films were investigated. The carrier concentration decreased and resistivity increased in the films with increasing number of Cl2A7 target chips. The optical transmittance of all of the thin films was above 80 % in the visible wavelength range. The structural property and surface roughness of the films were examined and the decrease of crystallinity and surface roughness was strongly dependent on the change of grain size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.752-758
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• 2010

The etching characteristics of indium tin oxide (ITO) thin films in an $O_2/BCl_3/Ar$ plasma were investigated. The etch rate of ITO thin films increased with increasing $O_2$ content from 0 to 2 sccm in $BCl_3$/Ar plasma, whereas that of ITO decreased with increasing $O_2$ content from 2 sccm to 6 sccm in $BCl_3$/Ar plasma. The maximum etch rate of 65.9 nm/m in for the ITO thin films was obtained at 2 sccm $O_2$ addition. The etch conditions were the RF power of 500 W, the bias power of 200 W, the process pressure of 15 mTorr, and the substrate temperature of $40^{\circ}C$. The analysis of x-ray photo electron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of ITO thin films and etch species.

• Analytical Science and Technology
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• v.5 no.1
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• pp.135-142
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• 1992

Indium tin oxide(ITO) films coated on the window glass selectively transmit the solar energy and infrared. We call this system passive solar collectors. Selectively absorbing properties of sol gel dip coated ITO films were characterized by UV-VIS-NIR spectroscopy. The effects of heat treating temperature, time, atmosphere, substrate and barrier layers are concerned. Indium tin oxide films heat-treated at $500^{\circ}C$ in a reducing atmosphere show intrinsic properties. Efficiency of solar energy transmittance was enhanced by coating of $SiO_2-ZrO_2$ as an alkali ion barrier layer. Energy was saved by the double layers of $SiO_2-ZrO_2$ and ITO since solar energy is transmitted and heat generated inside(${\lambda}$ > 2700nm) is reflected.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1055-1061
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• 1999

Indium Tin Oxide (ITO) films were fabricated by vacuum deposition technique and their microwave shielding properties were investigated for the application to the transparent shield material. The vacuum coating was conducted in a RF co-sputtering machine. The film composition and structure associated with the sputtering conditions (argon and oxygen pressure. substrate temperature. RF input power) were investigated for the attainment of high electrical conductivity and good transparency. The electrical conductivity of IT0 films fabricated under the optimum deposition conditions (substrate temperature : $300^{\circ}C$. Ar flow rate : 20 sccm, Oxygen flow rate : 10 sccm, In/Sn input power : 50/30 W) showed 5.6$\times10^4$mho/m. The optical transparency is also considerably good. The microwave shielding properties including the dominant shielding mechanism are investigated from the electrical conductivity, thickness and skin depth of the ITO films. The total shielding effectiveness is then estimated to be 26 dB, which provides a suggestion that the IT0 films can be effectively used as the transparent shield material.

• Applied Chemistry for Engineering
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• v.20 no.6
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• pp.612-616
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• 2009

Transparent conductive oxide (TCO) films have been widely used in the field of flat panel display industry. Transparent conductive indium zinc oxide (IZO) thin films with excellent chemical stability have attracted much attention as an alternative material for indium tin oxide (ITO) films. In this study, using a $In_2O_3$ and ZnO powder mixture with a ratio of 90 : 10wt% as a target, IZO films were prepared on polynorbornene (PNB) substrates by electron beam evaporation. The effect of substrate temperature and $O_2$ introduction flow rate were investigated in terms of electrical and optical properties of deposited IZO films. The best electrical and optical properties we obtained from this study were sheet resistance value of $5.446{\times}10^2{\Omega}/{\boxempty}$ and optical transmittance of 87.4% at 550 nm at $O_2$ introduction flow rate of 4 sccm, deposition rate of $2{\AA}$/sec, thickness of 1000 $\AA$ and substrate temperature of $150^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.3
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• pp.473-478
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• 2006

High quality indium tin oxide (ITO) thin films have been prepared by DC magnetron sputtering technique. By controlling the deposition parameters such as substrate temperature and oxygen flow rate, we were able to minimize the negative ion damage during the deposition. Films pr데ared under such conditions were found to posses an excel]ent electrical resistivity of $1.6\times10^{-4}{\Omega}cm$ and also found to have a optical transmission above 90%. We also observe that, increasing the oxygen now rate above 4 sccm leads to an increase in electrical resistivity of the films while the transmission was found to saturate with the increase in the oxygen gas flow.

• ETRI Journal
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• v.27 no.4
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• pp.405-410
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• 2005

High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of $2.9{\times}10^{-4}{\Omega}cm$ and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 $cd/m^2$ were 2500 $cd/m^{2}$ and 2 $mA/m^{2}$, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.209-209
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• 2012

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An additional doping was not applied for heterojunction solar cells due to the spontaneous junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedding Si heterojunction solar cell provided significantly enhanced efficiency of 9.23% as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme of the effective TCO film-embedding heterojunction Si solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.98-98
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• 1999

Highly transparent and conducting tin-doped indium oxide (ITO) films were deposited on polycarbonate substrate by ion-assited deposition. Low substrate temperature (<10$0^{\circ}C$) was maintained during deposition to prevent the polycarbonate substrate from be deformed. The influence of ion beam energy, ion current density, and tin doping, on the structural, electrical and optical properties of deposited films was investigated. Indium oxide and tin-doped indium oxide (9 wt% SnO2) sources were evaporated with assisting ionized oxygen in high vacuum chamber at a pressure of 2$\times$10-5 torr and deposition temperature was varied from room temperature to 10$0^{\circ}C$. Oxygen gas was ionized and accelerated by cold hallow-cathode type ion gun at oxygen flow rate of 1 sccm(ml/min). Ion bea potential and ion current of oxygen ions was changed from 0 to 700 V and from 0.54 to 1.62 $\mu$A. The change of microstructure of deposited films was examined by XRD and SEM. The electrical resistivity and optical transmittance were measured by four-point porbe and conventional spectrophotometer. From the results of spectrophotometer, both the refractive index and the extinction coefficient were derived.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.510-514
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• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.