• Title/Summary/Keyword: Indium tin oxide

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Synthesis of IZTO(Indium Zinc Tin Oxide) particle by spray pyrolysis and post-heat treatment and characterization of deposited IZTO film

  • Lim, Seong Taek;Kim, Sang Hern
    • Journal of the Korean Applied Science and Technology
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    • v.33 no.4
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    • pp.734-740
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    • 2016
  • The micron-sized indium zinc tin oxide (IZTO) particles were prepared by spray pyrolysis from aqueous precursor solution for indium, zinc, and tin and organic additives such as citric acid (CA) and ethylene glycol (EG) were added to aqueous precursor solution for indium, zinc, and tin. The obtained IZTO particles prepared by spray pyrolysis from the aqueous solution without organic additives had spherical and filled morphologies, whereas the IZTO particles obtained with organic additives had more hollow and porous morphologies. The micron-sized IZTO particles with organic additives were changed fully to nano-sized IZTO particles, whereas the micron-sized IZTO particles without organic additives were not changed fully to nano-sized IZTO particle after post-treatment at $700^{\circ}C$ for 2 hours and wet-ball milling for 24 hours. Surface resistances of micron-sized IZTO's before post-heat treatment and wet-ball milling were much higher than those of nano-sized IZTO's after post-heat treatment and wet-ball milling. From IZTO with composition of 80 wt. % $In_2O_3$, 10 wt. % ZnO, and 10 wt. % $SnO_2$ which showed a smallest surface resistance IZTO after post-heat treatment and wet-ball milling, thin films were deposited on glass substrates by pulsed DC magnetron sputtering, and the electrical and optical properties were investigated.

A Study on ElectricalㆍOptical Properties of Organic Light Emitting Diode by Oxygen Plasma Surface Treatment of Indium-Tin-Oxide Substrates (ITO 기판의 산소 플라즈마 표면 처리에 의한 OLED의 전기적ㆍ광학적 특성에 관한 연구)

  • Yang Ki-Sung;Kim Byoung-Sang;Kim Doo-Seok;Shin Hoon-Kyu;Kwon Young-Soo
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.1
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    • pp.8-12
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    • 2005
  • Indium tin oxide(ITO) surface treated by Oxygen plasma has been in situ analyzed using XPS(X-ray Photoelectron Spectroscopy) and EDS(Energy Dispersive Spectroscopy), to investigate the relations between the properties of the ITO surface and the properties of OLED(Organic Light Emitting Diode). We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by AFM(Atomic Force Microscope). We fabricated OLED using substrate that was treated optimum ITO surface. The plasma treatment of the ITO surface lowered the operating voltage of the OLED. We have obtained an improvement of luminance and decrease of turn-on voltage.

Fabrication and Characteristics of Indium Tin Oxide Films on CR39 Substrate for OTFT

  • Kwon, Sung-Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.5
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    • pp.267-270
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    • 2006
  • The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

Characteristics of Indium-Tin-Oxide Electrode for Continuous-flow PCR Chip (연속흐름 중합효소연쇄반응칩 제작을 위한 인듐 산화막 전극의 특성분석)

  • Joung, Seung-Ryong;Kim, Jun-Hyeok;Yi, In-Je;Kang, C.J.;Kim, Yong-Sang
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.3
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    • pp.561-565
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    • 2007
  • We propose glass and PDMS (polydimethylsiloxane) chips for DNA amplification with continuous-flow PCR (polymerase chain reaction). The PDMS microchannel was fabricated using a negative molding method for sample injection. Three heaters and sensors of ITO (indium-tin-oxide) thin films were fabricated on glass chip. ITO heaters and sensors were calibrated accurately for the temperature control of the liquid flow. ITO heater generated stable heat versus applied power. ITO sensor resistance was changed linearly versus temperature increase as a RTD (resistance temperature detector) sensor. As a result, we enable precision temperature control of continuous-flow PCR chip. Using the continuous-flow PCR chip DNA plasmid pKS-GFP 720 bp was successfully amplified.

Electrochemical Immunosensor Using the Modification of an Amine-functionalized Indium Tin Oxide Electrode with Carboxylated Single-walled Carbon Nanotubes

  • Aziz, Md.Abdul;Yang, Hae-Sik
    • Bulletin of the Korean Chemical Society
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    • v.28 no.7
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    • pp.1171-1174
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    • 2007
  • We have developed an electrochemical immunosensor that combines the electrocatalytic property of carbon nanotube and the low background current of indium tin oxide (ITO) electrode. A partial monolayer of carboxylated single-walled carbon nanotube (CCNT) is covalently formed on an ITO electrode modified with amine-terminated phosphonic acid. Nonspecifically adsorbed avidin on the hydrophobic sidewalls of CCNT is used to immobilize biotinylated antibody and to reduce the nonspecific binding to CCNT. The biotinylated antimouse IgG bound on avidin and the antimouse IgG conjugated with alkaline phosphatase (ALP) sandwiches a target mouse IgG. ALP catalyzes the conversion of p-aminophenyl phosphate monohydrate into p-aminophenol, which is electrocatalytically oxidized to p-quinone imine on CCNT surface. Moderate electrocatalytic electrode obtained with the combination of CCNT and ITO allows low detection limit (0.1 ng/ mL).

Characteristics and fabrications of high brightness organic light emitting diode(OLED) (고휘도 유기발광소자 제작 및 특성)

  • Jang, Yoon-Kee;Lee, Jun-Ho;Nam, Hyo-Duk;Park, Chin-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.316-319
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    • 2001
  • Organic light emitting diodes(OLEDs) with a hole injection layer inserted between Indium-Tin-Oxide(ITO) anode and hole transport layer were fabricated. The effect of plasma treatment on the surface properties of Indium-Tin-Oxide(ITO) anode were studied. The electrical and optical characteristics of the fabricated organic light emitting diodes(OLEDs) were also studied. The diode including of plasma treated ITO substrate and the hole injection layer, which showed the luminance of 5280 $cd/m^{2}$ at 8 V

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Properties of indium tin oxide thin films annealed in vacuum (진공에서 열처리된 ITO 박막의 특성)

  • 이임연;이기암
    • Korean Journal of Optics and Photonics
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    • v.11 no.3
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    • pp.152-157
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    • 2000
  • Post-deposition vacuum annealing effects in electron-bearn-evaporated indium tin oxide (ITO) films have been investigated by the change of transmittance, sheet resistance and crystalline structure with annealing temperature ( $200-335^{\circ}C$) and oxygen partial pressure ($1\times^10^{-5}-1$\times10^{-4} torr$) in air and vacuum. The sarnples were polycrystalline films with a preferred orientation in the (222) plan. High quality films with sheet resistance as low as 62 Q/O and transmittance over 99% (absentee layer at 500 nm) have been obtained by suitably controlling the vacuum annealing pararneters.neters.

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${\gamma}$-FIB를 이용한 산소 유량에 따른 ITO (Indium Tin Oxide)의 Energy Band Structure 측정

  • Lee, Gyeong-Ae;Kim, Dong-Hae;Gwon, Gi-Cheong;Eom, Hwan-Seop;Choe, Eun-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.191-191
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    • 2011
  • 최근 투명전극 연구는 태양전지 및 디스플레이, LED 등 많은 분야에서 응용되며 또한 기술 개발이 활발하다. 그 중 전기 전도도가 우수하면서 밴드갭이 2.5 eV 이상으로 가시광 영역에서 투명하기 때문에 디스플레이의 투명전극으로 ITO (Indium Tin Oxide)가 많이 사용되고 있다. 본 실험에서는 RF magnetron sputtering법을 이용한 ITO의 증착시 산소 유량을 달리하여 제작한 박막의 Energy Band Structure를 ${\gamma}$-FIB system을 이용하여 측정하였다. ITO에 이온화 에너지가 24.5 eV인 He Ion source를 주사하였을 때 Auger self-convolution을 통해 이차전자의 운동 에너지 분포를 구하고, 이를 통해 ITO 내의 Energy Band Structure를 실험적으로 측정하였다.

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An Electrochemical Detector Using Prussian Blue Electrodeposited Indium Tin Oxide Electrode (Prussian blue가 전착된 indium tin oxide 전극을 이용한 전기화학적 검출기)

  • Yi, In-Je;Kim, Ju-Ho;Kang, Chi-Jung;Kim, Yong-Sang
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.10
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    • pp.449-452
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    • 2005
  • We fabricated an electrochemical detector (ECD) to catalyze redox reaction efficiently by electrodepositing Prussian blue (PB) on the indium tin oxide (ITO) electrode. Capillary electrophoresis (CE) and amperometric method were used. We investigated the PB surface properties by topography from atomic force microscopy (AFM). Also PB film thickness calibration with respect to deposition time and voltage was used to get better PB surFace. The PB thin film of dense and smooth surface could catalyze redox reaction efficiently. Comparing with CE-ECD microchip using bare-lTO electrode, proposed CE-ECD microchip using PB deposited electrode has shown better sensitivity by determining the detected peak current from the electropherograms while the concentration of tested analyzes was maintained the same. It is verified that detection limit can be lowered for 0.01 mM of dopamine and catechol respectively.

Fabrication and Characteristics of Indium Tin Oxide Films on Polycarbonates CR39 Substrate for OTFTs

  • Kwon, Sung-Yeol
    • Korean Journal of Materials Research
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    • v.17 no.4
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    • pp.232-235
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    • 2007
  • Indium tin oxide (ITO) films were deposited on polycarbonate CR39 substrate using DC magnetron sputtering. ITO thin films were deposited at room temperature because glass-transition temperature of CR39 substrate is $130^{circ}C$ ITO thin films are used as bottom and top electrodes and for organic thin film transparent transistor (OTFT). The electrodes electrical properties of ITO thin films and their optical transparency properties in the visible wavelength range (300-800 nm) strongly depend on the volume of oxygen percent. The optimum resistivity and transparency of ITO thin film electrode was achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85% transparency in the visible wavelength range (300-800 nm) was measured without post annealing process, and resistivity as low as $9.83{\times}^{TM}10^{-4}{\Omega}$ cm was measured at thickness of 300 nm.