• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.6-11
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• 2019

For a wider application of laser direct patterning, selective laser ablation of indium tin oxide (ITO) film on transparent oxide semiconductor (TOS) thin film was carried out using a diode-pumped Q-switched Nd:YVO₄ laser at a wavelength of 1064 nm. In case of the laser ablation of ITO on indium gallium zinc oxide (IGZO) film, both of ITO and IGZO films were fully etched for all the conditions of the laser beams even though IGZO monolayer was not ablated at the same laser beam condition. On the contrary, in case of the laser ablation of ITO on zinc oxide (ZnO) film, it was possible to etch ITO selectively with a slight damage on ZnO layer. The selective laser ablation is expected to be due to the different coefficient of thermal expansion (CTE) between ITO and ZnO.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.1999-2003
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• 2014

Indium tin oxide ($In_2Sn_{1-x}O_{5-y}$) nanoparticles were synthesized by hydrothermal method from stable indium tin acetylacetone complexes and postannealing at $600^{\circ}C$. The absence of chlorine ions shortened the synthesis process, decreased the particle agglomeration and improved the particle purity. The introduced complexing ligand acetylacetone decreased the obtained nanoparticle size. The improved powder properties accelerated the sintering of the $In_2Sn_{1-x}O_{5-y}$ nanoparticles and reached a relative density of 96.4% when pressureless sintered at $1400^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.190-192
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• 2007

A neutral beam system has been developed to produce hyperthermal neutral beams composed of indium, tin, and oxygen atoms. Using these hyper thermal neutral beams with energies in the range of tens of eV, high quality indium-tin oxide (ITO) thin films have been obtained on glass substrates at room temperature. The optical transmittance of the films is higher than 85% at a wavelength of 550 nm and the electrical resistivity is lower than $1{\times}10^{-3}{\Omega}cm$.

• Korean Chemical Engineering Research
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• v.60 no.1
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• pp.62-69
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• 2022

Graphene has a large surface area to volume ratio and good mechanical and electrical property and biocompatibility. This study described the electrochemical deposition and reduction of graphene oxide on the surface of indium tin oxide (ITO) glass slide and electrochemical characterization of graphen-modified ITO. Cyclic voltammetry was used for the deposition and reduction of graphene oxide. The surface of graphen-coated ITO was characterized using scanning electron microscopy and energy dispesive X-ray spectroscopy. The electrodes were evaluated by performing cyclic voltammetry and electrochemical impedance spectroscopy. The number of cycles and scan rate greatly influenced on the coverage and the degree of reduction of graphene oxide, thus affecting the electrochemical properties of electrodes. Modification of ITO with graphene generated higher current with lower charge transfer resistance at the electrode-electrolyte interface. Glucose oxidase was immobilized on the graphene-modified ITO and has been found to successfully generate electrons by oxidizing glucose.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.197-197
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• 2009

Indium tin oxide (ITO), Indium zinc oxide (IZO) 박막은 DC 마그네트론 스퍼터링 시스템을 이용하여 유리기판 위에 증착되었으며, Indium-zinc-tin oxide (IZTO) 박막은 두 개의 캐소드(DC, RF)를 사용한 마그네트론 이원동시방전 시스템에 의해 증착되었다. 모든 박막은 상온 증착 후 $200^{\circ}C$에서 후열처리 되었으며, IZO에 Sn이 소량 첨가됨에 따라 IZO보다 더 낮은 비저항을 갖는 것을 확인할 수 있었다.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.54-61
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• 1996

Indium-tin oxide (ITO) films were deposited on the glass substrate by the reactive -ionized cluster beam deposition(ICBD) method. In the oxygen atmosphere, indium cluster formed through the nozzle is ionized by the electron bombardment and is accelerated to be deposited on the substrate. And tin is simultaneoulsy evaporated from the boron-nitride crucible. The chracteristics of films were examined by the X-ray photoelectron spectroscopy(XPS), glancing angle X-ray diffractrion(GXRD) and the electrical properties. were measured by 4-point-probe and Hall effect measurement system . From the XPS spectrum , it was found that indium and tin atoms combined with the oxygen to form oxide$(In_2O_3, SnO_2)$. In the case of films with high tin-concentration, the GXRD spectra show that the main $In_2O_3$ peak of (222) plane, but also sub peaks((440) peak etc.) and $SnO_2$ peaks were detected. From that results, itis concluded that the heavily dopped tin component (more than 14 at. %) disturbs to form $In_2O_3$(222) phase. Four-point-probe and Hall effect measurement show that, in the most desirable case, the transmittance of the films is more then 90% in visible range and its resistivity is $$\rho$=3.55 \times10^{-4}\Omega$cm and its mobility is $\mu$=42.8 $\textrm{cm}^2$/Vsec.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.94.2-94
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• 2003

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.433-438
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.159-159
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• 2008

투명전도체 (transparent conducting oxides: TCOs) 는 일반적으로 $10^3\Omega^{-1}Cm^{-1}$의 전도도, 가시광 영역에서 80%이상의 투명성을 가지는 재료로서, 액정 박막 표시 장치(TFT-LCD), 광기전성 소자, 유기 발광 소자, 에너지 절약 창문, 태양전지(sollar cell) 등 전극으로 사용되고 있다. 최근에는 TCO의 전도도특성을 조절하여 반도성특성을 가진 투명 산화물 반도체(transparent oxide semiconductor: TOS) 을 이용한 박막 트랜지스터 연구가 활발히 진행 중이다. 기존의 실리콘을 기반으로 하는 박막 트랜지스터의 낮은 이동도, 불투명성의 특성을 가지고 있지만, 산화물 박막트랜지스터는 높은 이동도를 발현 할 수 있을 뿐만 아니라, 넓은 밴드갭 에너지를 갖는 산화물을 이용하므로 투명한 특성도 발현 할 수 있어 차세대 디스플레이의 구동소자로서 응용연구가 되고 있다. 이에 본 연구에서는 박막트랜지스터 channel layer로서의 Indium-Tin-Zinc oxide 적용특성을 조사하였다. Indium, Tin, Zinc 의 혼합비율을 다양하게 조절하여 타겟을 제작하였다. 이를 RF magnetron sputtering 를 이용하여 박막으로 성장시켰으며, 기판으로는 glass 기판을 사용하였다. 박막 성장시 아르곤과 산소의 비율을 다양하게 조절하였다. 성장시킨 박막은 Hall effect, Transmittance, Work function, XRD등을 이용하여 전기적, 광학적, 구조특성을 평가하였다. Indium-Tin-Zinc Oxide(ITZO) 을 channel layer로 사용하여 Thin-film transistor 을 제작하여, TFT의 I-V 및 stability특성을 평가하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.8
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• pp.12-16
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• 2002

It is confirmed that the ITO(Indium Tin Oxide) thin films can be etched by low-temperature plasma at atmospheric pressure. The etching happened deepest at a hydrogen flow rate of 4 sccm, and the etch rate was 120 /min. The etching speed corresponded to the H$\alpha$* emission intensity The etching mechanism of the ITO thin films is as follows; thin films were reduced by H$\alpha$*, and the metal compound residues were detached from the substrate by reacting on the CH* The etching was started after etching time of initial 50 sec and above the threshold temperature of 145$^{\circ}C$. The activation energy of 0.16 eV(3.75 Kcal/mole) was obtained from the Arrehenius plots.