• Korean Journal of Materials Research
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• v.22 no.4
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• pp.174-179
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• 2012

In this study, we demonstrated a simple and eco-friendly method, including mechanical polishing and attrition milling processes, to recycle sputtered indium tin oxide targets to indium tin oxide nanopowders and targets for sputtered transparent conductive films. The utilized indium tin oxide target was first pulverized to a powder of sub- to a few- micrometer size by polishing using a diamond particle coated polishing wheel. The calcination of the crushed indium tin oxide powder was carried out at $1000^{\circ}C$ for 1 h, based on the thermal behavior of the indium tin oxide powder; then, the powders were downsized to nanometer size by attrition milling. The average particle size of the indium tin oxide nanopowder was decreased by increasing attrition milling time and was approximately 30 nm after attrition milling for 15 h. The morphology, chemical composition, and microstructure of the recycled indium tin oxide nanopowder were investigated by FE-SEM, EDX, and TEM. A fully dense indium tin oxide sintered specimen with 97.4% of relative density was fabricated using the recycled indium tin oxide nanopowders under atmospheric pressure at $1500^{\circ}C$ for 4 h. The microstructure, phase, and purity of the indium tin oxide target were examined by FE-SEM, XRD, and ICP-MS.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.2013-2014
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• 2011

Indium tin oxide (ITO) thin films have been deposited onto bare glass substrates by sol-gel process. The solution was prepared by mixing indium precursor and tin precursor dissolved in 2-methoxyethanol at $75^{\circ}C$ for 12 hours. Indium tin oxide films were prepared by slowly heat up to $200^{\circ}C$ for 10 minutes and annealed at $350^{\circ}C$ for 1 hour. In this paper, we researched simple and inexpensive sol-gel process. To find the optimal ratio of In/Sn to reduce electric resistance in ITO made by sol-gel process, we assessed electric properties varying the ratio of In and Sn precursor.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1334-1338
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• 2006

In this work, indium tin oxide (ITO) thin film was fabricated by indium-tin-organic sol including ITO nanoparticle. ITO nanoparticle showed ultrafine size about 5 nm and (222) preferred crystal structure. Also, ITO sol-gel thin film showed good optical transmittance over 83% and electrical resistance less than $7\;{\times}\;10^3\;{\Omega}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.183-183
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• 2009

본 연구에선 ITO에 사용되는 Indium의 양을 줄이기 위해 ITO와 유사한 성질을 보이는 조성인 Indium - Zinc - Tin Turnary compound를 연구하였다. 각 조성은 Indium - Zinc - Tin Turnary compound를 기본으로 하여 Zinc site에 이종원소인 Al2O3와 Ga2O3를 doping함에 따라 변화되는 전기적 특성을 살며보았다. 분석에 사용한 Ceramic pellet은 일반적인 Ceramic process를 거쳐 제작되었다. 각 조성의 전기적 특성은 TCR meter와 Hall effect analyser를 이용하여 측정하였고, X-ray diffraction measurements(XRD), Scanning Electron microscope(SEM)를 이용하여 결정학적 특성을 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.307.1-307.1
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• 2016

Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.

• Journal of Electrical Engineering and Technology
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• v.6 no.5
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• pp.684-687
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• 2011

In this study, we investigate the photovoltaic performance of transparent conductive indium tin oxide (ITO), titanium-doped indium oxide (ITiO), and fluorine-doped tin oxide (FTO) films. ITO and ITiO films are prepared by radio frequency magnetron sputtering on soda-lime glass substrate at $300^{\circ}C$, and the FTO film used is a commercial product. We measure the X-ray diffraction patterns, AFM micrographs, transmittance, sheet resistances after heat treatment, and transparent conductive characteristics of each film. The value of electrical resistivity and optical transmittance of the ITiO films was $4.15{\times}10^{-4}\;{\Omega}-cm$. The near-infrared ray transmittance of ITiO is the highest for wavelengths over 1,000 nm, which can increase dye sensitization compared to ITO and FTO. The photoconversion efficiency (${\eta}$) of the dye-sensitized solar cell (DSC) sample using ITiO was 5.64%, whereas it was 2.73% and 6.47% for DSC samples with ITO and FTO, respectively, both at 100 mW/$cm^2$ light intensity.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.247-247
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• 2009

본 연구에서는 indium-tin oxide (ITO) 나노 입자 용액을 이용하여 간단한 공정을 통해 ITO 나노 패턴을 직접적으로 제작하는 기술에 대한 연구를 진행하였다. 이를 이용하여 300nm급 ITO 나노 dot 패턴을 제작하는데 성공하였으며 이를 glass 표면에 구현하는데 성공하였다.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.171-175
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• 2002

The change in work function was studied on Indium-Tin-Oxide(ITO) surface after O-plasma treatment using $\gamma$-Focused ion Beam($\gamma$-FIB). As the surface of ITO experienced more O-plasma treatment, both the surface resistivity and the work function got higher. Auger Electron Spectroscopy identified the increase of oxygen as well as the decrease of Sn. The rise of work function and surface resistivity is considered to be due to the change in oxygen and Sn on the surface of ITO.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.83-84
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• 1994

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.2-2
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• 2003