• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.314-315
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• 2008

We have studied a property change of organic light-emitting diodes (OLED)s due to a surface reformation of indium-tin-oxide(ITO) substrate. An ITO is widely used as a transparent electrode in light-emitting diodes, and the OLEDs device performance is sensitive to the surface properties of the ITO. The ITO surface reformation could reduce the Schottky barrier at the ITO/organic interface and increase the adhesion of the organic layer onto the electrode. We have studied the characteristics of OLEDs with a treatment by a wet processing of the ITO substrate. The self-assembled monolayer(SAM) was used for wet processing. The characteristics of OLEDs were improved by SAM treatment of an ITO in this work. The OLEDs with a structure of ITO/TPD(50nm)/$Alq_3$(70nm)/LiF(0.5nm)/Al(100nm) were fabricated, and the surface properties of ITO were investigated by using seneral characterization techniques. Self-assembled monolayer introduced at the anode/organic interface gave an improvement in turn-on voltage, luminance and external quantum efficiency compared to the device without the SAM layer. SAM-treatment time of the ITO substrate was made to be 0/10/15/20/25min. The current efficiency of the device with 15min. treated SAM layer was increased by 3 times and the external quantum efficiency by 2.6 times.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.316-316
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• 2008

Using an evaporation method, $SiO_2$ was deposited as a buffer layer between a flexible PET substrate and a ITO film deposited by DC magnetron sputtering and electro-optical properties were investigated with thickness variance of $SiO_2$ layers. After coating a $SiO_2$ layer and a ITO film, the ITO/$SiO_2$/PET was heated up to $200^{\circ}C$ and the resistivity and the transmittance were measured by hall effect measurement system and UV/VIS/NIR spectroscopy. As a result of depositing a $SiO_2$ buffer layer, the resistivity increased and the transmittance and adhesion property were enhanced than ITO films with no buffer layers and the resistivity was lowered as $SiO_2$ thickness increased from 50 $\AA$ to 100 $\AA$. It was found that the transmittance was independent of annealing temperature variance in $150^{\circ}C{\sim}200^{\circ}C$ and the resistivity decreased as the temperature increased and especially decreasing rate of the resistivity was higher as the buffer layer thickness was thinner. So under optimized depositing of $SiO_2$ buffer layers and post-annealing of ITO/$SiO_2$/PET, ITO films with enhanced adhesion, electro-optical properties can obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.353-353
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• 2008

Carbon nanotubes (CNTs) are attractive for field emitter because of their outstanding electrical, mechanical, and chemical properties. Several applications using CNTs as field emitters have been demonstrated such as field emission display (FED), backlight unit (BLU), and X-ray source. In this study, we fabricated a CNT cathode using transparent ultra-thin CNT film. First, CNT aqueous solution was prepared by ultrasonically dispersing purified single-walled carbon nanotubes (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). To obtain the CNT film, the CNT solution in a milliliter or even several tens of micro-litters was deposited onto a porous alumina membrane through vacuum filtration process. Thereafter, the alumina membrane was solvated by the 3 M NaOH solution and the floating CNT film was easily transferred to an indium-tin-oxide (ITO) glass substrate of $0.5\times0.5cm^2$ with a film mask. The transmittance of as-prepared ultra-thin CNT films measured by UV-Vis spectrophotometer was 68~97%, depending on the amount of CNTs dispersed in an aqueous solution. Roller activation, which is a essential process to improve the field emission characteristics of CNT films, increased the UV-Vis transmittance up to 93~98%. This study presents SEM morphology of CNT emitters and their field emission properties according to the concentration of CNTs in an aqueous solutions. Since the ultra-thin CNT emitters prepared from the solutions show a high peak current density of field emission comparable to that of the paste-base CNT emitters and do not contain outgassing sources such as organic binders, they are considered to be very promising for small-size-but-high-end applications including X-ray sources and microwave power amplifiers.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.152-158
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• 1995

Eteching characteristics of the Indium Tin Oxide (ITO), which is transparent conductor, was investigated with CH4/H2 and Ar as etching gases for the Reactive Ion Etching (RIE). With CH4/H2 for the etching gas, the highly selective etching characteristics for the ITO on GaAs was obtained. It was examined that the dominant etching parameter for the selective etchning of ITO on GaAs structure was the chamber pressure. But, the etching selectivity for ITO on InP was poor eventhough we tried systematic etching. RIE etching conditins using CH4/H2 gas was limited due to the formation of polymer on the substrates. In the case of Ar gas for the reactive gas, the selectivity of ITO on BaTiO3 was above 10. The etch rete of ITO was more sensitive to the etching parameters than that of BaTiO3, which was almost constant with different etching parameters.

• The Journal of the Korea Contents Association
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• v.15 no.10
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• pp.10-17
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• 2015

Transparent LED display is providing city residents with different attractions via information services and landscape and increasing demand is detected in various areas. It is true that majority of the current demand in transparent electrode material was found and used in ITO but limitations in capacity and economic efficiency led to the need for continuous research and technology development via new materials. As a new material, metal mesh has 85% of the materials to substitute ITO and is widely used due to low-cost and high-conductive rate. Maintenance of transparent LED display utilizing metal mesh compared to existing ITO transparent display is much easier as it not only saves resources but is also economical. Thus the objective of this paper lies in proposing the utilization of metal mesh in transparent LED display prototype to enable economical use of transparent LED display technology and to expand the market and to also propose transparent LED display development method via metal mesh and manufacture a prototype based on the method. And a characteristic comparison test between ITO and metal mesh provides the possibility of using metal mesh as a transparent electrode material in transparent LED display development.

• Applied Chemistry for Engineering
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• v.26 no.6
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• pp.725-729
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• 2015

Organic light emitting diodes (OLEDs) are regarded as the next generation display and solid-state lighting due to their superb achievements from extensive research efforts on improving the efficiency and stability of OLEDs in addition to developing new materials. Herein, efficient green phosphorescent OLEDs were obtained by using hexaazatrinaphthylene (HAT) derivatives as a hole injection layer. External quantum and current efficiencies of OLEDs were enhanced from 8.8% and 30.8 cd/A to 13.6% and 47.7 cd/A, respectively by inserting a thin layer of HAT derivatives between the ITO and hole transporting layer. The enhancement of OLEDs was found to be originated from the inserted HAT derivatives, which resulted in the optimized hole-electron balance inside the emission layer.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.1-11
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• 2014

Flexible transparent conductive electrodes (TCEs) have recently attracted a great deal of attention owing to rapid advances in flexible electronic devices, such as flexible displays, flexible photovoltanics, and e-papers. As the performance and reliability of flexible electronics are critically affected by the quality of TCE films, it is imperative to develop TCE films with low resistivity and high transparency as well as high flexibility. Indium tin oxide (ITO) has been the most dominant transparent conducting material due to its high optical transparency and electrical conductivity. However, ITO is susceptible to cracking and delamination when it is bent or deformed. Therefore, various types of flexible TCEs, such as carbon nanotube, conducting polymers, graphene, metal mesh, Ag nanowires (NWs), and metal mesh have been extensively investigated. Among several options to replace ITO film, Ag NWs and metal mesh have been suggested as the promising candidate for flexible TCEs. In this paper, we focused on Ag NWs and metal mesh, and summarized the current development status of Ag NWs and metal mesh. The several critical issues such as high contact resistance and haze are discussed, and newly developed technologies to resolve these issues are also presented. In particular, the flexibility and durability of Ag NWs and metal mesh was compared with ITO electrode.

• Bulletin of the Korean Chemical Society
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• v.32 no.2
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• pp.559-565
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• 2011

The following noble series of statistical copolymers, poly[(2-(3-thienyl)ethanol n-butoxycarbonylmethylurethane)-co-3-hexylthiophene] (PURET-co-P3HT), were synthesized by the chemical dehydrogenation method using anhydrous $FeCl_3$. The structure and electro-optical properties of these copolymers were characterized using $^1H$-NMR, UV-visible spectroscopy, elemental analysis, GPC, DSC, TGA, photoluminescence (PL), and cyclic voltammetry (CV). The statistical copolymers, PURET-co-P3HT (1:0, 2:1, 1:1, 1:2, 1:3), were soluble in common organic solvents and easily spin coated onto indium-tin oxide (ITO) coated glass substrates. Hybrid bulk heterojunction photovoltaic cells with an ITO/G-PEDOT/PURET-co-P3HT:PCBM:Ag nanowires/$TiO_x$/Al configuration were fabricated, and the photovoltaic cells using PURET-co-P3HT (1:2) showed the best photovoltaic performance compared with those using PURET-co-P3HT (1:0, 2:1, 1:1, 1:3). The optimal hybrid bulk heterojunction photovoltaic cell exhibits a power conversion efficiency (PCE) of 1.58% ($V_{oc}$ = 0.82 V, $J_{sc}$ = 5.58, FF = 0.35) with PURET-co-P3HT (1:2) measured by using an AM 1.5 G irradiation (100 mW/$cm^2$) on an Oriel Xenon solar simulator (Oriel 300 W).

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.6 s.312
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• pp.16-26
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• 2006

In this paper, we propose a 3D shape restoration system which measures height and surface shape of transparent ITO glass and delivers errors in focal length and incident angle of laser beam to femto-second laser micromachining. The proposed system is composed of a line scan laser, a high resolution camera, a linear motion guide synchronized to image capturing, and a control station. Also, we define the sensitivity indices that represent a relation between measurement error and a position of a camera and scan laser, and utilize it for optimum design. The results of the proposed system are compared with results of SPM(Scanning Probe Microscope) and prove the usefulness of the system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.6
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• pp.451-455
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• 2012

To compare an electrical and optical characteristics of indium tin oxide (ITO) and carbon nanotube (CNT) electrode on flexible and reflective display, we fabricate two charged particle-type display panels under the same panel condition of which the width of ribs is 10 ${\mu}m$, the cell size is $300{\mu}m{\times}300{\mu}m$, the q/m value of the white particles is -4.3 ${\mu}C/g$ and that for the black is +1.3 ${\mu}C/g$, and the cell gap is 75 ${\mu}m$, 125 ${\mu}m$, and 175 ${\mu}m$. We use plastic substrates coated with ITO and CNT electrode. To evaluate optical property, we measure a response time of particles using a laser and a photodiode. Threshold and driving voltages of CNT electrode according to the sheet resistance of 300, 600, 1,000 (ohm/sq) are compared with ITO electrode of 10 (ohm/sq). A response time of the CNT panel is similar to that of ITO panel, but the threshold and driving voltages of CNT panel are higher than that of ITO panel, inducing a large bombardment of the particles and shortening the lifetime of the panel. High difference of a threshold and a driving voltage of CNT panel will induce an particle clumping, resulting degradation of the panel. A bending radius of the fabricated CNT panel is 18 ${\mu}m$.