• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.658-666
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• 2000

Sb and Sb-Fe doped SnO$_2$film resistors were prepared by spray pyrolysis technique. The effects of Sb and Sb-Fe addition on TCR and electrical properties of SnO$_2$film resistors were studied. Also the dependence of electrical properties on the substrate temperature and substrate-nozzle distance was investigated. The Sn-Sb system with 7.9 mol% SbCl$_3$(STO-406) and Sn-Sb-Fe systems with 7.3 mol% SbCl$_3$+7.3 mol% FeCl$_3$(STO-407) and with 3.4 mol% SbCl$_3$+7.7mol% FeCl$_3$(STO-408) were prepared. Both of the systems Sn-Sb and Sn-Sb-Fe represented nonlinearity of TCR with temperature. As the amount of Fe increased TCR was shifted to positive direction. Decreasing Sb or increasing Fe caused resistivity to increase. Also increasing Fe caused the crystallization degree of rutile structure in SnO$_2$film to decrease. The electrical resistivity decreased with increasing substrate temperature The resistivity decreased with increasing substrate-nozzle distance in the ranges from 15 to 25 cm and increased rapidly at the distance over 25cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.6-9
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• 2000

InSb hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at $200^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.21-24
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• 2000

lnSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.408-413
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• 2016

The dielectric thin films applied to multi-colored semitransparent thin film solar cells have been extensively studied. In this work, we prepared GeSbTe and GeTe chalcogenide thin films using magnetron sputtering, and investigated their optical and phase-change properties to replace the dielectric films. The changes of surface morphology, sheet resistance, and X-ray diffraction of the Te-based chalcogenide films support the fact that the amorphous stability of GeTe films is superior to that of GeSbTe films. While both amorphous GeSbTe and GeTe films thinner than 30 nm have optical transparency between 5% and 60%, GeTe films transmit more visible light than GeSbTe films. It is confirmed by computer simulation that the color of semitransparent silicon thin film solar cells can be adjusted with the addition of GeSbTe or GeTe films. Since it is possible to adjust the contrast of the solar cells by exploiting the phase-change property, the two kinds of chalcogenide films are anticipated to be used as an optical layer in semitransparent solar cells.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.839-842
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• 2009

In this paper, chalcogenide glasses material(Se, Te, Sb) is firstly used as encapsulation layer of OLEDs under high vacuum of $10^{-4}$Pa. In the experiments, properties of OLEDs encapsulated by Se, Te, Sb thin film is compared with that of device encapsulated by traditional method. It is found that Se, Te, Sb film can extend lifetime of devices to 1.4, 2, 1.3 times respectively. Chalcogenide glasses film as encapsulation layer has little effect on some characteristics of device. The research indicated that OLEDs can be well protected upon applying Se, Te, Sb film as encapsulation layer. It is clear that it can prolong the lifetime obviously.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.20-22
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• 1997

In ours study, we investigated the various properties in Te-light doped $Sb_{85}$G $e_{15}$ thin films such as the change of reflectance and transmittance according to phase change from amorphous to crystalline states In all films the transmittance was decreased, but the reflectance was increased by annealing. Particularly, the reflectance between as- deposited state and annealed state showed the largest change in the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film at 780nm, which was about 40% in as-deposited state and about 70% in annealed state. Therefore, it might be considered that the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film is recording medium showing to a good optical properties if it is used to optical recording of the phase change type. change type.ype.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.376-380
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• 2008

The optical properties of multi layered thin films with $Sb_2O_3/Na_3AlF_6/Sb_2O_3/Cr$ were simulated by using EMP(Essential Macleod Program). EMP is a comprehensive software package to design and analyse the optical characteristics of multi-layered thin film. $Sb_2O_3$ and $Na_3AlF_6$ were selected as a high refractive index and low refractive index material respectively. Additionally Cr was chosen as mid reflective material. Optical properties including color effect were systematically studied in terms of different optical thickness of low refractive index material. The optical thickness of $Na_3AlF_6$ was changed as 0.25, 0.5, 0.75 and $1.0\lambda$. The film with 0.25, 0.5, 0.75 and $1.0\lambda$ of optical thickness showed mixed color range between purple and red range, yellowish green and bluish green, purple and mixed color range of green and purple respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.134-134
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• 2009

In this work, we report that crystallization speed as well as the electrical and optical properties about the N-doped $Ge_2Sb_2Te_5$ thin films. The 200-nm-thick N-doped $Ge_2Sb_2Te_5$ thin film was deposited on p-type (100) Si and glass substrate by RF reactive sputtering at room temperature. The amorphous-to-crystalline phase transformation of N-doped $Ge_2Sb_2Te_5$ thin films investigated by X-ray diffraction (XRD). Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheet resistance of N-doped $Ge_2Sb_2Te_5$ thin films annealed at different temperature. In addition, the surface morphology and roughness of the films were observed by Atomic Force Microscope (AFM). The crystalline speed of amorphous N-doped $Ge_2Sb_2Te_5$ films were measured by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration: 10~460 ns). It was found that the crystalline speed of thin films are decreased by adding N and the crystalline temperature is higher. This means that N-dopant in $Ge_2Sb_2Te_5$ thin film plays a role to suppress amorphous-to-crystalline phase transformation.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.6
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• pp.31-37
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• 1993

InSb thin films were fabricated by zone melting recrystallization of In/Sb multilayered thin films prepared by sequential evaporation. Unreacted metal phase or dispersed metal precipitates lowered the electron mobility and the electron mobility increased with development of (111) prefered orientation. Properties of the film could be controlled by changing mzximum temperature and scanning speed, and the electron mobility as high as 12, 000 cm $^2$/Vsec could be obtained under the optimized conditions.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.32-35
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• 1979

When photon was injected to SnO2- amorphous Sb S thin film -Sn structure through the window of SnO2, photo- voltaic effect was observed. With the energy change of photon, photovoltage had either positive or negative value This phenomenon was considered to be caused by formation of n-n heterojunction in SnO2 - Sb S structure and Schottky junction Sb S -Sn structure.