• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.30-34
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• 2010

$CoSb_3$-based skutterudite compounds are promising candidates as thermoelectric (TE) materials used in intermediate temperature region. In this study, sintering of $CoSb_3$ powder and joining of $CoSb_3$ to copper-molybdenum electrode have been simultaneously performed by spark plasma sintering technique. The Ti foil was used for preventing the diffusion of copper into $CoSb_3$ and the Cu : Mo = 3 : 7 Vol. ratio composition was selected by the consideration of thermal expansion coefficients. The insertion of Ti interlayer between Cu-Mo and $CoSb_3$ was effective to join $CoSb_3$ to Cu-Mo by forming an intermediate layer of $TiSb_2$ at the Ti-$CoSb_3$ boundary. However, the formation of TiSb and TiCoSb intermediate layers deteriorated the joining properties by the generation of cracks in the interface of intermediate layer/$CoSb_3$ and intermediate/intermediate layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.4
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• pp.207-212
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• 2012

A single phase $Mg_3Sb_2$ alloy was synthesized by melting the mixture of Mg and Sb metal powders at 1173 K. The figure of merit of the $Mg_3Sb_2$ prepared by melting method increased with temperature and showed a value of $2.39{\times}10^{-2}$ at 593 K. When the $Mg_3Sb_2$ powders were milled at high speed in a planetary ball mill for 12~48 h, Zintle phase ($Mg_3Sb_2$) was maintained as a main phase, but its crystallinity became deteriorated and elemental Sb phase appeared. Sb phase free $Mg_3Sb_2$ could be obtained by the mechanical alloying of high speed ball milling for 24 h using elemental Mg and Sb powder mixtures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.6
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• pp.225-231
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• 2016

The valence band maximum (VBM) and conduction band minimum (CBM) of Al-doped GaInAsSb alloys substrated on GaSb are calculated by using an analytic approximation based on the tight binding method. The relative positions of the VBM and CBM between Al-GaInASSb and GaSb determine band alignement type, valence band offset (VBO) and conductin band offset (CBO) for the heterojunctions. In this study, aluminium doping is assumed to be substituted in the cation site and limited up to 20 % because it can easily oxidize and degrade materials. It is found that the Al-doped alloys exhibit type-II band alignments over the entire composition range and make the band gaps increase, whereas the VBO and CBO decrease. The decreasing rate of VBO is higher than that of CBO, which implies the Al components play a decisive role in controlling electrons at the interface. The Al-dopled GaInAsSb alloy has a direct band gap induced by $E({\Gamma})$ with a considerable distance from the E(L) and E(X), however, $E({\Gamma})$ approaches to E(L) and E(X) in the high Sb concentration (Sb > 0.7-0.8) which might affect the electron mobility and degrade the optical quality.

• Journal of the Mineralogical Society of Korea
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• v.8 no.1
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• pp.13-22
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• 1995

Phase relations of the Pd-Sb system were investigated using the sealed-capsule technique; the quenched run products were studied by reflected light microscopy, X-ray diffraction, and electron microprobe analysis. Eight binary phases were confirmed to exist in the system: Pd20Sb7, Pd31Sb12, Pd8Sb3 (mertieite II), Pd5Sb2, Pd2Sb, Pd5Sb3, PdSb (sudburyite), and PdSb2, (unnamed PdSb2), The X-ray powder diffraction data of all the phases, except for Pd5Sb3, however, may be indexable on an orthorhombic cell, space group Cmc2, with a=3.362(1), b=17.484(7), c=6.934(2)$\AA$. Some physical properties as well as re-determined cell parameters are newly established. A revised phase relations of the Pd-Sb system are presented.

• Journal of the Mineralogical Society of Korea
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• v.9 no.2
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• pp.93-101
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• 1996

Behavior of platinum group elements during crystallization within ore magma is of interest. In this study platinum is selected and its mineralogical and geochemical behavior in the presence of antimony and tellurium is investigated at 600$^{\circ}C$. High purity Pt, Sb, and Te are used as starting material and silica quartz tubings are as container. Rection products have been examined by use of ore microscope, X-ray diffractometer, electron microprobe analyser and micro-indentation hardness tester. stable phases at 600$^{\circ}C$ are platinum (Pt), Pt5Sb, Pt3Sb, PtSb, stumpflite (PtSb), geversite (PtSb), PtTe, Pt3Te4, Pt2Te3, moncheite (PtTe2), tellurantimony (Sb2Te3), and antimony (Sb). Geversite is the mineral showing the most significant extent of solid solution by up to 27 at% between Sb and Te elements. Isothermal section of 600$^{\circ}C$ is established in this study. It is noted that platinum cannot coexists with stumpflite or geversite under equilibrium condition, and stumpflite composition in equilibrium with geversite may be used as geothermometer.

• Journal of the Mineralogical Society of Korea
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• v.1 no.1
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• pp.15-19
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• 1988

In the process of re-checking the phase relations of the Pt-Sb system the previously reported Pt4+Sb phase did not occur. Instead, Pt34Sb7 phase with an average chemical composition (wt%) Pt 89.3, Sb 11.4, total 100.7, has been newly found to exist, and the formula Pt34Sb7 has been tentatively assigned to it, It is pale brownish grey to yellowish grey under refloecting microscope and non-bireflectant, VHN100=225 (206-243). X-ray powder patterns are (d(I/Io)): 2.318(100), 2.293(100), 2.110(30), 1.440(50), 1.390(15), 1.283(5), 1.203(70) and 1.192(40)$\AA$. They are indexable on the basis of tertragonal cell with $\alpha$=3.948(3), c=16.85(1)$\AA$. A question whether the tetragonal Pt34Sb7 is the new phase or a polymorph of the cubic Pt4+Sb phase remains unclear and awaits better X-ray diffraction, electron microprobe analysis and DTA for the Pt4+Sb phase. The Pt3Sb phase reported to be of tetragonal symmetry has been confirmed to exist. It is greyish yellow in air and in oil, very weakly bireflectant, and weakly anisotropic. VHN25=216 (183-240). Its X-ray powder data have been successively indexed on a tetragonal cell with $\alpha$=3.9455(7), c=16.959(5)$\AA$.

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1396-1400
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• 1994

Electrical properties in the ZnO-Bi2O3-CoO-Zn7Sb2O12 system were investigated with Zn7Sb2O12 content (0.1~2 mol%). The increase of the Zn7Sb2O12 content inhibited the grain growth of ZnO, which showed a narrow grain size distribution of ZnO. The breakdown voltage (Vb) increased markedly with 1 mol% Zn7Sb2O12 addition due to the grain growth control behaviour of the Zn7Sb2O12 . The nonlinear I-V characteristic was significantly influenced by the Zn7Sb2O12 content (or Bi2O3/Zn7Sb2O12 ratio). Addition of 0.5 mol% Zn7Sb2O12 showed the highest nonlinear coefficient ($\alpha$) of 43. The leakage current in prebreakdown region was decreased with increasing Zn7Sb2O12 content.

• Bulletin of the Korean Chemical Society
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• v.18 no.4
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• pp.385-389
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• 1997

We report on the development of a new method to control the coverage of a metal film prepared with immersion method. An Sb species in solution adsorbed irreversibly at an open circuit potential (∼0.2 V) as an oxygenous Sb(Ⅲ) on a clean Au electrode, and the adsorbates showed voltammetric features in the potential range from 0.1 V to - 0.4 V. The full coverage of the Sb adsorbates was ∼0.45. On the contrary, the Sb species in solution did not adsorb at all on iodine-covered Au electrode surfaces, when the iodine coverages were more than 0.25. As the iodine coverage decreased below 0.25, however, the irreversible adsorption of Sb took place and the coverage of Sb increased accordingly. This electrochemical behavior has been interpreted as the penetration of the adsorbing Sb species in solution through open spaces among the iodine adlattices of coverages less than 0.25. With the manipulation of the iodine coverage, the controllable range of Sb coverage was from 0 to 0.45, i.e. the full coverage of Sb. In addition, the reversible deposition of Sb on an iodine-saturated Au electrode with voltammetric scan has been observed, which is contrasted with the adsorptive behavior of Sb on the clean Au electrode.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.5
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• pp.191-198
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• 2018

SnSb alloy powders with excess Sn or Sb are fabricated by the high energy ball-milling of pure Sn and Sb powders with different Sn/Sb molar ratios, and then their material properties and lithium electrochemical performances are investigated. It is revealed by X-ray diffraction that SnSb alloys are successfully synthesized, and the powder size is decreased via ball-milling. Charge-discharge test using a coin-cell shows that the best result, in terms of the cyclability and the capacity after 50 cycles, comes from the electrode composed of Sn : Sb = 4 : 6, i.e. the capacity of $580mAh\;g^{-1}$ after 50 cycles. When the electrode is composed of Sn : Sb = 3 : 7, however, the capacity is noticeably decreased by the restrained Sn reaction with Li-ion. The pure SnSb alloy powders (Sn : Sb = 5 : 5) results in the second best performance. In the case of Sn-rich SnSb alloys, the initial capacity is relatively high, but the capacity is quickly fading after 20 cycles.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.223-223
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• 2010

InSb 물질은 다른 III-V족 물질들과 비교해서 bandgap이 낮고 전자 이동도가 높아, 소자 구현 시 낮은 전압으로도 고속 동작 특성을 제어할 수 있다는 장점이 있다. 그러나 Si, GaAs 또는 InP 등 쉽게 구할 수 있는 기판과 격자 부정합이 커서 상기 기판에 성장시 많은 defect가 존재하는 단점이 있다. 그러므로 이를 상기 기판에 성장하는데 meta-morphic이라 불리는 성장 기술이 요구되는 어려움이 있다. 본 발표에서 Semi-insulating GaAs 기판위에 고품질의 InSb 박막을 성장하기 위해 grading buffer technique을 도입하며 이에 대한 여러 가지 비교실험과 함께 최적의 성장 방법과 기술에 대해 논의 한다. GaAs와 InSb 물질사이의 bandgap과 격자 부정합을 고려하여 AlSb 물질을 먼저 성장하면서 동시에 InxAl1-xSb로 변화를 주어 InSb 박막이 성장되도록 하였다. ($x=0{\rightarrow}1$). 성장 온도 변화 및 In과 Al의 조성비에 변화를 주어 grading 기법으로 성장하였고 상기 grading buffer위에 InSb 박막을 0.65um 성장하였다. $10um{\times}10um$ AFM 측정결과 2.2nm 정도의 표면 거칠기를 가지며 상온에서의 전자 이동도는 약 46, 300 cm2/Vs 이고 sheet electron density는 9.47(e11) /cm2의 결과를 확인하였다. 실험결과 InSb 박막을 올리는데 있어 가장 고려할 사항인 GaAs 기판과 InSb 박막 사이에 존재하는 격자 부정합을 어떻게 해결하는가에 대해서, 기존의 여러가지 방법과 비교해서 grading buffer 기술이 유효하다는 것을 증명하였다.