• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.222-229
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• 2003

InP crystal is an increasingly important semiconductor material in the application of long-wave optoelectronic and high frequency devices. The equilibrium vapor pressure of phosphorus at the melting point of InP is so high that the synthesis process is very difficult. Liquid-encapsulated Czochralski (LEC) pulling from the melt at high pressure is a generally favored technique to grow InP single crystals. This technique involves two steps: the synthesis of polycrystalline powder and the growth of single crystal from the melt at high pressure. This article reviewed the latest development in the preparation of InP crystal and the evaluation on the crystal quality.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.207-210
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• 2001

Metal-organic VPE (MOVPE) epitaxial growth procedure and related device fabrication technique are reported for GaInP-based epitaxial materials and devices. For GaInP/GaInAs two-dimensional electron-gas field-effect transistor (TEGFET), a promising epitaxial stacking structure resulting in enhanced electron mobility is given. In conjunction with this, a new device fabrication technique to improve luminous intensity of GaInP-based LED is also shown.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.545-550
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• 2013

Piezoelectric PMN-29PT single crystal multilayer actuators [100 $mm^2$ in cross section and 22 mm in length] are designed and fabricated by stacking square plates [$10{\times}10{\times}0.5(t)\;mm^3$] of PMN-29PT single crystals having a $d_{33}$ of about 1,500 pC/N. The characteristics of PMN-29PT multilayer actuators are compared with those of P-025.40P multilayer PZT ceramic actuators [490 $mm^2$ in cross section and 60 mm in length] produced by PI in Germany. Even though the total volume of the PMN-29PT single crystal multilayer actuator is only about 7.5% of that of the P-025.40P ceramic multilayer actuator, PMN-29PT single crystal multilayer actuators are expected to show very similar properties to P-025.40P ceramic actuators in terms of static stroke and blocking force. Therefore, on the basis of their smaller mass and volume compared to the conventional PZT ceramic multilayer actuators, piezoelectric PMN-29PT single crystal multilayer actuators have significant potential regarding the development of various high performance actuators for aerospace subsystems.

• The Korean Journal of Mycology
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• v.20 no.3
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• pp.216-221
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• 1992

Aerial crystalline filaments emerged from dense type of mycelia on some monokaryotic transformants of Pleurotus florida, P. ostreatus and P. sajorcaju. Cytstals were not dissolved in water but soluble in ethanol or at the temperature of higher than $80^{\circ}C$. Crystals were detected in the mycelia grown on the mushroom minimal medium as well as the mushroom complete medium. They were produced on both liquid media and agar plate. Although the mycelia incubated at $15-20^{\circ}C$, produced crystals, the mycelia incubated at $30-35^{\circ}C$ did not. Furthermore, crystal forming mycelia were obtained from monokaryotic basidiospore of P. ostreatus and P. sajor-caju by mutations (UV irradiation).

• Restorative Dentistry and Endodontics
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• v.37 no.1
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• pp.16-23
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• 2012

Objectives: Present study was undertaken to investigate the crystal growth onto synthetic hydroxyapatite (HA) seeds in pH 4.3 and pH 7.0 supersaturated solutions with different fluoride concentrations. Materials and Methods: 8 groups of pH 4.3 and 7.0 calcium phosphate supersaturated solutions were prepared with different fluoride concentrations (0, 1, 2 and 4 ppm). Calcium phosphate precipitates yield crystal growth onto the HA seed surface while solutions flow. For evaluation of crystallizing process, the changes of $Ca^{2+}$, $PO{_4}^{3-}$, $F^-$ concentrations of the inlet and outlet solutions were determined. The recovered solid samples were weighed to assess the amount of minerals precipitated, and finally determined their composition to deduce characteristics of crystals. Results: During the seeded crystal growth, there were significantly more consumption of $Ca^{2+}$, $PO{_4}^{3-}$, $F^-$ in pH 4.3 solutions than pH 7.0 (p < 0.05). As fluoride concentration increased in pH 4.3 solution, $Ca^{2+}$, $PO{_4}^{3-}$, $F^-$ consumption in experimental solutions, weight increment of HA seed, and fluoride ratio in crystallized samples were increased. There were significant differences among the groups (p < 0.05). But in pH 7.0 solution, these phenomena were not significant. In pH 7.0 solutions, analyses of crystallized samples showed higher Ca/P ratio in higher fluoride concentration. There were significant differences among the groups (p < 0.05). But in pH 4.3 solution, there were not significant differences in Ca/P ratio. Conclusions: Crystal growth in pH 4.3 solutions was superior to that in pH 7.0 solutions. In pH 4.3 solutions, crystal growth increased with showed in higher fluoride concentration up to 4 ppm.

• Journal of the Korean GEO-environmental Society
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• v.7 no.6
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• pp.5-12
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• 2006

This study was conducted to investigate the effect of operational parameters such as dosage of magnesium and phosphate, pH, reaction time and existence crystal core for the removal of nitrogen and phosphorus in anaerobic fermentation supernatant by struvite crystallization. Optimal mole ratio of $Mg^{2+}:NH_4{^+}:PO_4{^{3-}}$ was 1.2:1.0:1.2. Under the optimal molar ratio, removal ratio and reaction rate constant of $NH_4{^+}-N$ and $PO_4{^{3-}}-P$ were 79.2, 96.8%, 0.157 and $0.344min^{-1}$, respectively. Optimal pH and reaction time were 11 and 10 minutes, respectively, in the optimal molar ratio. Residual concentration of $NH_4{^+}-N$ and $PO_4{^{3-}}-P$ showed lowest value with 1 g/L of crystal core addition. SEM analysis of struvite crystallization with crystal core showed higher crystal core growth than that of without crystal core. Struvite precipitate proved to be orthorhomic crystal structure by XRD analysis.

• Journal of Sericultural and Entomological Science
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• v.39 no.1
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• pp.67-72
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• 1997

As a condition for obtaining the silk I type crystal that has stability and high reproducibility, after dissolving silk fibroin crystalline part (Fcp), the changes of recrystallized crystal structure according to dialytic pH were examined by x-ray diffraction and differential thermal analysis. The Fcp was obtained from the aqueous solution of silk fibroin enzymatic proteolyzed by chymotrypsin. The crystal structure of Fcp showed silk II type. When the Fcp was dissolved by 10M LiBr aqueous solution, the Fcp1 showed the silk II type at pH 9. However, besides the silk II type, the silk I type structure begins to appear at pH 8 and only the silk I type structure was found below pH 6. On the other hand, the Fcp2 that calcium chloride was used in the dissolution found only the silk I type crystal structure below pH8.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.542-546
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• 1999

InP single crystal, III-V binary compound semiconductor, was grown by VGF(vertical gradient freeze) method using quartz ampoule and its electrical optical properties were investigated. Phosphorous powders were put in the bottom of quartz ampoule and Indium metal charged in conical quartz crucible what was attached at the upper side position inside the quartz ampoule. It was vacuous under the pressure of $10^5$Torr and sealed up. Indium metal was melted at $1070^{\circ}C$ and InP composition was formed by diffusion of phosphorous sublimated at $450^{\circ}C$ into Indium melt. By cooling the InP composition melt ($2^{\circ}C$~$5^{\circ}C$/hr of cooling rate) in range of $1070^{\circ}C$~$900^{\circ}C$, InP crystal was grown. The grown InP single crystals were investigated by X-ray analysis and polarized optical microscopy. Electrical properties were measured by Van der Pauw method. At the cooling method. At the cooling rate of $2^{\circ}C$/hr, growth direction of ingot was [111] and the quality of ingot was better at the upper side of ingot than the lower side. It was found that the InP crystals were n-type semiconductor and the carrier concentration, electron mobility and relative resistivity were $10^{15}$~$10^{16}/\textrm{cm}^3$ , $2\times 10^3$~$3\times 10^4{\textrm}{cm}^2$/Vsec and$2\times 10^{-1}$~$2\times 10^{-3}$/ Wcm in the range of 150K~300K, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.179-182
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• 2004

The $p-CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the Photoluminescence spectra of the as-grown $CdIn_2Te_4$ crystal and the various heat-treated crystals, the $(D^{o},X)$ emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_2Te_4:Cd$, while the $(A^{o},X)$ emission completely disappeared in the $CdIn_2Te_4:Cd$. However, the $(A^{o},X)$ emission in the photoluminescence spectrum of the $CdIn_2Te_4:Te$ was the dominant intensity like an as-grown $p-CdIn_2Te_4$ crystal. These results indicated that the $(D^{o},X)$ is associated with $V_{Te}$ acted as donor and that the $(A^{o},X)$ emission is related to $V_{Cd}$ acted as acceptor, respectively. The $p-CdIn_2Te_4$ crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of $(D^{o},\;A^{o})$ emission and its TO Phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and accepters such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_2Te_4$ was confirmed not to form the native defects because it existed in the stable form of bonds.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.291-297
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• 1995

The InP crystals have been grown by modified synthesis solute diffusion (SSD) method and its properties have been investigated. The crystals have been grown by lowering the crucible quartz for growth in the furnace and crystal growth rate is 1.8mm/day. The lattice constant a. of the grown crystals is 5.867.angs.. Etch pits density along growth direction of crystal changes from 3.0*10.sup 3/cm$\^$-2/ of first freeze part to 6.7*10$\^$4/cm$\^$-2/ of last freeze part and the radial direction of wafer shows nearly uniform distribution. The resistivity and the carrier concentration of the grown crystals are 1.43*10$\^$-1/.ohm.-cm, 7.7*10$\^$15/cm$\^$-3/ at room temperature, respectively. In the photolurninescence at 10K, the radiation transitions are observed by the near band edge recombination, a pair recombination due to Si donor - Zn acceptor and its phonon replica in the InP. The activation energy by Zn diffusion in undoped n-InP crystals is 1.22eV.