• 제목/요약/키워드: InP/ZnS

검색결과 782건 처리시간 0.033초

Effects of Soil-Plant Interactive System on Response to Exposure to ZnO Nanoparticles

  • Lee, Sooyeon;Kim, Saeyeon;Kim, Sunghyun;Lee, Insook
    • Journal of Microbiology and Biotechnology
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    • 제22권9호
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    • pp.1264-1270
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    • 2012
  • The ecotoxicological effects of nanomaterials on animal, plant, and soil microorganisms have been widely investigated; however, the nanotoxic effects of plant-soil interactive systems are still largely unknown. In the present study, the effects of ZnO nanoparticles (NPs) on the soil-plant interactive system were estimated. The growth of plant seedlings in the presence of different concentrations of ZnO NPs within microcosm soil (M) and natural soil (NS) was compared. Changes in dehydrogenase activity (DHA) and soil bacterial community diversity were estimated based on the microcosm with plants (M+P) and microcosm without plants (M-P) in different concentrations of ZnO NPs treatment. The shoot growth of M+P and NS+P was significantly inhibited by 24% and 31.5% relative to the control at a ZnO NPs concentration of 1,000 mg/kg. The DHA levels decreased following increased ZnO NPs concentration. Specifically, these levels were significantly reduced from 100 mg/kg in M-P and only 1,000 mg/kg in M+P. Different clustering groups of M+P and M-P were observed in the principal component analysis (PCA). Therefore, the M-P's soil bacterial population may have more toxic effects at a high dose of ZnO NPs than M+P's. The plant and activation of soil bacteria in the M+P may have a less toxic interactive effect on each of the soil bacterial populations and plant growth by the ZnO NPs attachment or absorption of plant roots surface. The soil-plant interactive system might help decrease the toxic effects of ZnO NPs on the rhizobacteria population.

In-situ XPS Study of Core-levels of ZnO Thin Films at the Interface with Graphene/Cu

  • Choi, Jinsung;Jung, Ranju
    • Journal of the Korean Physical Society
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    • 제73권10호
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    • pp.1546-1549
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    • 2018
  • We have investigated core-levels of ZnO thin films at the interface with the graphene on Cu foil using in-situ X-ray Photoelectron Spectroscopy (XPS). Spectral evolution of C 1s, Zn 2p, and O 1s are observed in real time during RF sputtering deposition. We found binding energy (BE) shifts of Zn 2p and 'Zn-O' state of O 1s depending on ZnO film thickness. Core-levels BE shifts of ZnO will be discussed on the basis of electron transfer at the interface and it may have an important role in the electronic transport property of the ZnO/graphene-based electronic device.

사료 內 Cu 및 Zn-Methionine Chelates 첨가가 육계의 생산성에 미치는 영향 (Effects of Cu and Zn-Methionine Chelates Supplementation on the Performance of Broiler Chickens)

  • 홍성진;임희석;백인기
    • Journal of Animal Science and Technology
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    • 제44권4호
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    • pp.399-406
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    • 2002
  • Methionine chelate 형태로 Cu 및 Zn의 첨가가 육계의 생산성과 영양소 이용률, 혈청 IgG 수준, 근위의 손상정도(gizzard erosion index) 그리고 간과 배설물의 Cu와 Zn 함량에 미치는 영향을 알아보기 위해 갓 부화한 1,000수의 Ross$^{(R)}$ 병아리를 4처리 5반복, 반복당 50수(암수 각각 25수씩)를 배치하여 5주간 사양시험을 실시하였다. 시험사료는 대조구 사료에 Cu와 Zn를 methionine chelate 형태로 100 ppm씩 단독 또는 혼합첨가하여 만들었다. 증체량은 chelate 첨가구들 모두 대조구 보다 높았고(P<0.05), 사료요구량은 chelate 첨가구들이 대조구 보다 낮았다(P<0.05). Cu와 Zn를 혼합하여 첨가한 처리구의 증체량과 사료효율은 Cu와 Zn를 단독 첨가한 처리구들보다 높은 경향을 나타냈다. 영양소 이용률은 Cu 및 Zn chelate 첨가에 의해 유의한 영향을 받지 않았다. 혈청 IgG 농도는 Cu와 Zn chelate 혼합처리구가 대조구에 비해 유의하게 높았으나(P< 0.05), 근위 궤양 정도는 처리에 따른 차이가 없었다. 간과 배설물 내 Cu 및 Zn 함량은 사료에서 이들 광물질의 함량에 의해 영향을 받았다(P<0.05). 결론적으로 Cu와 Zn chelate 단독 또는 혼합하여 첨가시 육계의 증체량과 사료효율을 개선시키고 혈청 IgG 농도를 증가시키며 간 내 Cu와 Zn 수준은 유의한 영향을 받지 않으나 분 내 Cu와 Zn의 함량은 증가시키는 것으로 나타났다.

우리나라 일부 우유의 무기질 함량 조성에 관한 연구 (Composition of Mineral Contents in Korean Cow무s Milk)

  • 이영희;정문호
    • 한국환경보건학회지
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    • 제30권1호
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    • pp.29-40
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    • 2004
  • This study was performed to investigate and assess the composition of mineral and macronutrient contents in Korean cow′s milk.48 individual farm raw milk, 10 plant raw milk and 29 market milk were collected from June to August in 2003. The minerals such as calcium(Ca), potassium(K), magnesium(Mg), sodium(Na), zinc(Zn), iron(Fe) and phosphorus(P) were determined by using atomic absorption spectrometer(AAS). The macronutrients such as fat, protein and lactose were tested by using IR spectrometer. The obtained analytical results of minerals(mg/100 g) and rnaetronutrients (%) are as follows:1. In case of raw cow′s milk ; Ca 113.56, K 144.09, Mg 10.86, Na 42.53, Zn 0.42, Fe 0.030, p 113.32, fat 3.85, protein 3.08, lactose 4.80,2. In case of market cow′s milk ; Ca 103.04, K 142.46, Mg 10.27, Na 43.21, Zn 0.40, Fe 0.034. p 97.30, fat 3.78, protein 3.05, lactose 4.70,3. In case of fortified market cow′s milk ; Ca 165.40, K 145.79, Mg 10.57. Na 42.55, Zn 0.57, Fe 0.414, p 94.68, fat 3.74, protein 3.08, lactose 4.68,4. In case of processed market cow′s milk ; Ca 134.72, K 142.74, Mg 10.33, Na 45.07, Zn 0.50, Fe 0.650, p 92.48, fat 3.72, protein 3.07, lactose 4.74. According to the group of market milk(milk, fortified market row′s milk, processed market cow′s milk), the mean concentration of Ca and Fe were significantly higher in fortified and processed milk than milk(p<0.05). There were no significant differences in macronutrient(fat, protein, lactose) and mineral contents between pasteurized milk and UHT(ultra high temperature) treated milk($\alpha$=0.05). The labeled "Nutritional Facts" of market milk were satisfied with "Labeling Standards for Livestock Products of Korea". The measured mean concentrations of Ca, Fe, Zn were generally higher than lower limit of labeled value(above 80% of labeled value). The mean concentration of sodium was lower than upper limit of labeled value(below 120% of labeled value).

Fabrication and characterization of ternary compound ZnCdS nanowires

  • Lee, Dong-Jin;Son, Moon-A;Kang, Tae-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.57-57
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    • 2010
  • Self assembled $Zn_{x-1}Cd_xS$ nanowires, synthesized on a Indium tin oxide coated glass substrate with low composition of Cd as x=0.09, were fabricated non-precursor via a co-evaporation method using of solid sources of CdS and ZnS. We studies that ZnCdS nanowires are dislocation-free and the single crystalline hexagonal wurtzite structure showed by transmission electron microscopy and selected area electron diffraction pattern. Cathode luminescence spectra showed an near band edge peak at 383nm originated from nanowires at 80K and 300K. Core level spectra of the Cd 3d, Zn 2p and S 2p in the ZnCdS nanorods were obtained by x-ray photoelectron spectroscopy. Prepared ZnCdS nanorods showed different shape with increase of substrate temperature at the growth.

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Physicochemical properties of a calcium aluminate cement containing nanoparticles of zinc oxide

  • Amanda Freitas da Rosa;Thuany Schmitz Amaral;Maria Eduarda Paz Dotto;Taynara Santos Goulart;Hebert Luis Rossetto;Eduardo Antunes Bortoluzzi;Cleonice da Silveira Teixeira;Lucas da Fonseca Roberti Garcia
    • Restorative Dentistry and Endodontics
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    • 제48권1호
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    • pp.3.1-3.14
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    • 2023
  • Objectives: This study evaluated the effect of different nanoparticulated zinc oxide (nano-ZnO) and conventional-ZnO ratios on the physicochemical properties of calcium aluminate cement (CAC). Materials and Methods: The conventional-ZnO and nano-ZnO were added to the cement powder in the following proportions: G1 (20% conventional-ZnO), G2 (15% conventional-ZnO + 5% nano-ZnO), G3 (12% conventional-ZnO + 3% nano-ZnO) and G4 (10% conventional-ZnO + 5% nano-ZnO). The radiopacity (Rad), setting time (Set), dimensional change (Dc), solubility (Sol), compressive strength (Cst), and pH were evaluated. The nano-ZnO and CAC containing conventional-ZnO were also assessed using scanning electron microscopy, transmission electron microscopy, and energy-dispersive X-ray spectroscopy. Radiopacity data were analyzed by the 1-way analysis of variance (ANOVA) and Bonferroni tests (p < 0.05). The data of the other properties were analyzed by the ANOVA, Tukey, and Fisher tests (p < 0.05). Results: The nano-ZnO and CAC containing conventional-ZnO powders presented particles with few impurities and nanometric and micrometric sizes, respectively. G1 had the highest Rad mean value (p < 0.05). When compared to G1, groups containing nano-ZnO had a significant reduction in the Set (p < 0.05) and lower values of Dc at 24 hours (p < 0.05). The Cst was higher for G4, with a significant difference for the other groups (p < 0.05). The Sol did not present significant differences among groups (p > 0.05). Conclusions: The addition of nano-ZnO to CAC improved its dimensional change, setting time, and compressive strength, which may be promising for the clinical performance of this cement.

Electrical Properties of V-I Curve of p-ZnO:Al/n-ZnO:Al Junction Fabricate by RF Magnetron Sputtering

  • Jin, Hu-Jie;So, Soon-Jin;Song, Min-Jong;Park, Choon-Bae
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.408-409
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    • 2007
  • Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

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ZnO에서 질소 불순물에 의한 p-type Capacitance (P-type Capacitance Observed in Nitrogen-doped ZnO)

  • 유현근;김세동;이동훈;김정환;조중열
    • 전기학회논문지
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    • 제61권6호
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    • pp.817-820
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    • 2012
  • We studied p-type capacitance characteristics of ZnO thin-film transistors (TFT's), grown by metal organic chemical vapor deposition (MOCVD). We compared two ZnO TFT's: one grown at $450^{\circ}C$ and the other grown at $350^{\circ}C$. ZnO grown at $450^{\circ}C$ showed smooth capacitance profile with electron density of $1.5{\times}10^{20}cm^{-3}$. In contrast, ZnO grown at $350^{\circ}C$ showed a capacitance jump when gate voltage was changed to negative voltages. Current-voltage characteristics measured in the two samples did not show much difference. We explain that the capacitance jump is related to p-type ZnO layer formed at the $SiO_2$ interface. Current-voltage and capacitance-voltage data support that p-type characteristics are observed only when background electron density is very low.

Optical characteristics of p-type ZnO epilayers doped with Sb by metalorganic chemical vapor deposition

  • Kwon, B.J.;Cho, Y.H.;Choi, Y.S.;Park, S.J.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.122-122
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    • 2010
  • ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.

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Photoluminescence properties of N-doped and nominally undoped p-type ZnO thin films

  • Jin, Hu-Jie;Jeong, Yun-Hwan;Park, Choon-Bae
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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    • pp.65-66
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    • 2008
  • The realization and origin of p-type ZnO are main issue for photoelectronic devices based on ZnO material. N-doped and nominally undoped p-type ZnO films were achieved on silicon (100) and homo-buffer layers by RF magnetron sputtering and post in-situ annealing. The undoped film shows high hole mobility of 1201 $cm^2V^{-1}s^{-1}$ and low resistivity of $0.0454\Omega{\cdot}cm$ with hole concentration of $1.145\times10^{17}cm^{-3}$. The photoluminescence(PL) spectra show the emissions related to FE, DAP and defects of $V_{Zn}$, $V_O$, $Zn_O$, $O_i$ and $O_{Zn}$.

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