• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.313-313
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• 2012

In recent years there have been many studies of InGaN/GaN based light emitting diodes (LEDs) in order to progress the performance of luminescence. Many previous literatures showed the performance of LEDs by changing the LED structures and substrates. However, the studies carried out by the researchers so far were very complicated and sometimes difficult to apply in practice. Therefore, we propose one simple method of changing the thickness and the numbers of multiple quantum wells (MQWs) in order to optimize their effects. In our research, we investigated electrical and optical properties by changing the well thickness and the number of quantum well (QW) pair in LED structures by growing the structure -inch Si (111) wafer. We defined the samples from LED_1 to LED_3 according to MQW structure. Samples LED_1, LED_2 and LED_3 consist of 5-pair InGaN/GaN (3.5 nm/ 4.5 nm), 5-pair InGaN/GaN (3 nm/4.5 nm) and 7-pair InGaN/GaN (3.5 nm/4.5 nm), respectively. We characterized electrical and optical properties by using electroluminescence (EL) measurement. Also, Efficiency droop was analyzed by calculating external quantum efficiency (EQE) with varying injection current. The EL spectra of three samples show different emission wavelength peaks, FWHM and the blueshift of wavelength caused by screening the internal electric field because of the effect of different MQW structure. The results of optical properties show that the LED_2 sample reduce the internal electric field in QW than LED_1 from EL spectra. the increase in the number of QW pairs reduces the strain and increase the In composition in MQW. And, the points of efficiency droop's peak show different trend from LED_1 to LED_3. It is related with the carrier density in active region. Thus, from the results of experiments, we are able to achieve high performance LEDs and a reduction of efficiency droop and emission wavelength blueshift by optimizing MQWs structure.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.636-639
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• 2004

We have synthesized a $Eu^{2{\cdot}}$ -activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$ yellow phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED chip. Three distinct emission bands from the GaN-based LED and the ($Sr_3MgSi_2O_8$:Eu + $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$:Eu) phosphor are clearly observed at 405nm, 455 nm and at around 540 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based ($Sr_3MgSi_2O_8$:Eu + $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1338-1342
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• 2005

We have synthesized an $Eu^{2+}$-activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba_2SiO_4$ green phosphor and $Ba^{2+}$ co-doped $Sr_3SiO_5$ red phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED $chip(\lambda_{em}=405 nm)$. Three distinct emission bands from the GaN-based LED and the $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu)$ phosphor are clearly observed at 460nm, 520 nm and at around 600 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.192.2-192.2
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• 2015

본 논문에서는 사파이어 기판 표면에 레이저 처리를 통해 격자 구조(레이저 격자 구조)를 제작하고 InGaN/GaN 발광다이오드(Light-Emitting Diodes, LED) 박막을 성장 한 시료에서 Bowing 특성 변화를 논의한다. 그리고 Bowing 정도에 따른 InGaN/GaN LED의 광학 및 전기적 특성을 Photoluminescence (PL)와 Electroluminescence (EL) Mapping 법을 이용하여 상호 비교 분석하였다. 2-인치 사파이어 기판 상에 레이저 격자 구조의 간격은 1 mm (GS1-LED), 2 mm (GS2-LED), 3 mm (GS3-LED) 로 제작하였으며, 격자 구조가 없는 LED를 기준 시료(C-LED)로 사용하였다. GS1-LED, GS2-LED, GS3-LED의 Bowing 정도는 C-LED 대비 각각 8%, 7.6%, 6.4% 감소하였다. PL Mapping 결과, GS-LED의 발광 파장의 분포 균일도가 C-LED 보다 개선되는 것을 확인하였고, 파장이 C-LED 대비 단파장으로 이동하였다. 또한, GS-LED시료의 PL 강도는 C-LED보다 증가하였고, 특히 GS2-LED의 PL 강도는 C-LED 대비 6.9% 증가 하였다. EL mapping 결과, GS-LED 발광 파장의 분포 균일도는 PL 결과와 유사하게 측정되었으며, 2인치 기판 전체 면적에 대한 GS-LED의 주요 동작전압 및 출력 전력 수율이 C-LED대비 현저히 개선되었다. 사파이어 기판 표면에 제작한 레이저 격자 구조에 따른 InGaN/GaN LED의 광학적, 전기적 특성을 Bowing의 개선과 응력 완화 현상으로 논의 할 예정이다.

• Journal of Advanced Marine Engineering and Technology
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• 제27권1호
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• pp.33-41
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• 2003

The optical properties of $ZnS_ySe_{1-\chi-y}:Te_{\chi}(\chi<0.08,y~0.11)$ alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_1 and Te_n(n\geq2)$cluster bound excitons, respectively. Bright green (535 nm) and blue (462 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The turn-on voltage of 2.1 V in current-voltage characteristics is very small compared to that of commercial InGaN-based LEDs (>3.4 V), indicating the formation of a good ohmic contact due to the optimized p-ZnSe/p-ZnTe multi-quantum well (MQW) superlattice electrode layers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.103-104
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• 1998

GaN is a ppromising materials fot applications in the blue/ultraviolet (UV) light emitting diodes (LEDs)[1] and laser diodes (LDs) [2] High quality ohmic contacts are very critical to these applications since the qualities of ohmic contact system pplay an impportant roles in the high efficient device opperations. For the n-GaN there have been many repports about ohmic contacts and the sppecific contact resistance were as low as from 10-8$\Omega$cm2 However for the ohmic contacts on pp-GaN much fewer study were repported and the sppecific contact resistivity was much lower than of n-GaN. In this ppapper we repport a new Ni/ppt/Au metallization scheme and discuss the mechanism of ohmic formation

• 디지털융복합연구
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• 제12권7호
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• pp.291-296
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• 2014

GaN LED의 p-패드 금속과 에피층 사이에 $SiO_2$ 전류 절연 층을 제작하고, p-전극 금속의 패턴을 핑거(finger) 형태로 확장하여 형성함으로써, 대면적 고출력 소자에서 전류가 균일하게 퍼지도록 유도함과 동시에 p 패드 금속 표면에서의 광 손실을 줄여 광 출력을 증진시켰다. $SiO_2$ 절연 층의 면적과 두께를 다르게 하면서 광 출력의 증가를 비교 확인하였고, 실바코 사의 ATLAS 툴을 이용하여 컴퓨터 시뮬레이션을 실시함으로써 LED 내 활성 층에서의 전류 밀도 분포를 계산하였다. $SiO_2$ 절연 층의 두께가 $50{\mu}m$와 $100{\mu}m$ 인 두 경우 모두, p 패드의 직경이 $105{\mu}m$이고 핑거의 폭은 $12{\mu}m$인 경우와 비교할 때, p 패드의 직경이 $100{\mu}m$이고 핑거의 폭이 $6{\mu}m$인 경우가 더 높은 광 출력 특성을 나타냈다.

• 대한화학회지
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• 제50권3호
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• pp.237-242
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• 2006

LED는 고휘도 청색 칩의 개발로 인해 단순표시소자로만 이용되던 것이 다양한 분야의 발광소자로 적용되기 시작하였다. 특히, 최근에 InGaN 칩과 황색 형광체(YAG:Ce3+)를 이용한 방법이 많이 연구되어지고 있다. 하지만 이 방법은 2 파장을 이용한 것으로 색연지수가 낮은 단점을 지니며, 황색의 YAG:Ce3+ 형광체 이외에 450~470 nm의 여기 영역에서 효율적으로 발광하는 형광체가 거의 없다. 따라서 본 연구에서는 장파장 영역의 여기 특징을 지닌 thiogallate 형광체의 합성을 시도하였다. 그 중에 가장 잘 알려진 SrGa2S4:Eu2+ 형광체의 모체를 변화시켜 Sr2Ga2S5:Eu2+ 형광체를 합성하였으며, 발광특성을 조사하였다. 그리고 무해성과 제조 공정의 단순화를 위하여, 황화물질과 5 % H2/95 % N2 혼합 기체를 CS2와 H2S 가스 대신에 사용하였다. 이렇게 합성되어진 형광체는 550 nm의 발광 중심을 가지는 황색 형광체로서 300~500 nm에 이르는 넓은 여기원을 통한 발광이 가능하다. 그리고 YAG:Ce3+ 형광체와 비교해 볼 때 강도 면에서 110 % 이상을 보이며, UV 영역의 여기적 특성을 이용해 UV LED에도 응용이 가능하다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.47-47
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• 2011

There have been numerous efforts to enhance the efficiency of light-emitting diodes (LEDs) by using low dimensional structures such as quantum dots (QDs), wire (QWRs), and wells (QWs). We demonstrate QD/QWR/QW hybrid structured LEDs by using nano-scaled pyramid structures of GaN with ~260 nm height. Photoluminescence (PL) showed three multi-peak spectra centered at around 535 nm, 600 nm, 665 nm for QWs, QWRs, and QDs, respectively. The QD emission survived at room temperature due to carrier localization, whereas the QW emission diminished from 10 K to 300 K. We confirmed that hybrid LEDs had zero-, one-, and two-dimensional behavior from a temperature-dependent time-resolved PL study. The radiative lifetime of the QDs was nearly constant over the temperature, while that of the QWs increased with increasing temperature, due to low dimensional behavior. Cathodoluminescence revealed spatial distributions of InGaN QDs, QWRs, and QWs on the vertices, edges, and sidewalls, respectively. We investigated the blue-shifted electroluminescence with increasing current due to the band-filling effect. The hybrid LEDs provided broad-band spectra with high internal quantum efficiency, and color-tunability for visible light-emitting sources.

• 한국재료학회지
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• 제22권11호
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• pp.636-641
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• 2012

In this study, we have investigated highly efficient nanoscale surface corrugated light emitting diodes (LEDs) for the enhancement of light extraction efficiency (LEE) of nitride semiconductor LEDs. Nanoscale indium tin oxide (ITO) surface corrugations are fabricated by using the conformal nanoimprint technique; it was possible to observe an enhancement of LEE for the ITO surface corrugated LEDs. By incorporating this novel method, we determined that the total output power of the surface corrugated LEDs were enhanced by 45.6% for patterned sapphire substrate LEDs and by 41.9% for flat c-plane substrate LEDs. The enhancement of LEE through nanoscale surface corrugations was studied using 3-dimensional Finite Different Time Domain (FDTD) calculation. From the FDTD calculations, we were able to separate the light extraction from the top and bottom sides of device. This process revealed that light extraction from the top and bottom sides of a device strongly depends on the substrate and the surface corrugation. We found that enhanced LEE could be understood through the mechanism of enhanced light transmission due to refractive index matching and the increase of light scattering from the corrugated surface. LEE calculations for the encapsulated LEDs devices also revealed that low LEE enhancement is expected after encapsulation due to the reduction of the refractive index contrast.