• Title/Summary/Keyword: InGaN/GaN light-emitting diode

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Optical thyristor operating at 1.55 μm (장파장에서 동작하는 Optical Thyristor)

  • Kim, Doo-Gun;Kim, Hyung-Soo;Jung, Sung-Jae;Choi, Young-Wan;Lee, Seok;Woo, Deok-Ha;Jhon, Young-Min;Yu, Byung-Geel
    • Korean Journal of Optics and Photonics
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    • v.13 no.2
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    • pp.146-150
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    • 2002
  • 1.55${\mu}{\textrm}{m}$ PnpN optical thyristor as a smart optical switch has potential applications in advanced optical communication systems. PnpP optical thyristors operating at 1.55${\mu}{\textrm}{m}$ are proposed and fabricated for the first time. In the optical thyristors, we employ InGaAs/InP multiple quantum well (MQW) for the active n- and p-layers. The thyristors show sufficiently nonlinear s-shape I-V characteristics and spontaneous emission. In the OFF-state, the device has a high-impedance up to switching voltage of 4.03(V). On the other hand, it has low-impedance and emits spontaneous light as a light-emitting diode in the ON-state voltage of 1.77(V), and switching voltage is changed under several light input conditions. It can be used as a header processor in optical asynchronous transfer mode (ATM), as a hard limiter in optical code division multiple access (CDMA) and as a wavelength converter in optical WDM systems.