• Applied Science and Convergence Technology
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• v.27 no.3
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• pp.56-60
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• 2018

The optical properties of the digital-alloy $(In_{0.53}Ga_{0.47}As)_{1-z}/(In_{0.52}Al_{0.48}As)_z$ grown by molecular beam epitaxy as a function of composition z (z = 0.4, 0.6, and 0.8) have been studied using temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. As the composition z increases from 0.4 to 0.8, the PL peak energy of the digital-alloy $In(Ga_{1-z}Al_z)As$ is blueshifted, which is explained by the enhanced quantization energy due to the reduced well width. The decrease in the PL intensity and the broaden FWHM with increasing z are interpreted as being due to the increased Al contents in the digital-alloy $In(Ga_{1-z}Al_z)As$ because of the intermixing of Ga and Al in interface of InGaAs well and InAlAs barrier. The PL decay time at 10 K decreases with increasing z, which can be explained by the easier carrier escape from InGaAs wells due to the enhanced quantized energies because of the decreased InGaAs well width as z increases. The emission energy and luminescence properties of the digitalalloy $(InGaAs)_{1-z}/(InAlAs)_z$ can be controlled by adjusting composition z.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 1993.05a
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• pp.53-59
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• 1993

The interests on GaAs solar cell grown on Ge substrates as an alternative of GaAs substrate arises from its very close lattice parameters, very small difference in thermal expansion coefficients, and much higher fracture toughness between GaAs and Ge. In addition, for many space power application, it would be a most attractive solar cell with high radiation resistance of GaAs and high reliability for the reverse current damage of Ge, and expecting the theoretical efficiency limit of the tandem GaAs/Ge solar cell is 34% under 1 Sun, AM 0, and 28$^{\circ}C$ condition. In this report, we have reviewed the performance and the manufacturing technics of GaAs/Ge solar cell, and current status of research in GaAs/Ge solar cell.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.365-370
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• 1998

We studied a electrical properties in GaAs/AlGaAs/InGaAs pseudomorphic high electron mobility transistors(PHEMT s) recessed by electron cyclotron resonance(ECR) plasma and wet etching. Using the $NH_4OH$ solution, a nonvolatile AlF$_3$layer formed on AlGaAs surface after selective gate recess is effectively eliminated. Also, we controlled threshold voltage($V_th$) using $H_3PO_4$ etchant. We have fabricated a device with 540 mS/mm maximum transconductance and -0.2 V threshold voltage by using $NH_4OH$ and $H_3PO_4$dip after ECR gate recessing. In a 2-finger GaAs PHEMT with a gate length of 0.2$\mu m$ and width of 100 $\mu m$, a current gain of 15 dB at 10 GHz and a maximum cutoff frequency of 58.9 GHz have been obtained from the measurement of current gain as a function of frequency at 12mA $I_{dss}$ and 2 V souce-drain voltage.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.11-20
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• 1994

GaAs and AlGaAs epi-layers were grown on semi-insulating (100) GaAs substrate by molecular beam epitaxy (MBE) and their electrical and optical properties have been investigated by several measurements. In undoped GaAs, the p-type GaAs layers with the good surface morphology were obtained under the growth conditions of the substrate temperatures ranging from 570 to $585^{\circ}C$ and the $As_4$/Ga ratios from 17 to 22. In the samples with the growth rates of the ranges of $0.9~1.1 {\mu}m/h$, the impurity concentrations were in the ranges of $1.5{\times}10^{14}~5.6{\times}10^{14}cm^{-3}$ with the Hall mobilities of $590~410cm^2/V-s$. In the Si-doped GaAs, the n-type GaAs layers with low electro trap, only two hole deep levels were observed with uniform doping profiles (<1%). AlGaAs layers with good surface morphology and crystallinity were grown under an optimum condition of the substrate temperature, $600^{\circ}C $. 8 deep level defects were observed between 0.17~0.85eV in undoped AlGaAs layers.

• Journal of Electrical Engineering and Technology
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• v.1 no.4
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• pp.543-545
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• 2006

Surface photovoltage (SPV) measurements were performed to investigate the optic-electrical properties in the electron beam irradiation semi-insulating GaAs (e-beam irradiation SI-GaAs) and semi-insulating GaAs (SI-GaAs). The signal intensity showed stronge. dependency on the frequency in the SI-GaAs than it did in the e-beam irradiation SI-GaAs. This result indicates that the number of the generated photo-carriers depends on the surface state. Also, the B region of the e-beam irradiation SI-GaAs found a weak signal. This result was explained by the surface and internal damage with e-beam irradiation.

• Proceedings of the Korean Society for Bio-Environment Control Conference
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• 2001.04b
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• pp.51-56
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• 2001

This study was carried out to research the effect of nutrient composition and GA4＋7 on growth, flower quality and bulb development in special hydroponics of cut tulip. Flowering of 'Cassini' was markedly accelerated by standard+GA4＋7, K200＋GA4＋7, N250＋GA4＋7 treatment, last internode was increased by N250 as compared with other treatment. For 'Christmas Marvel', flowering was promoted by K250＋GA4＋7, last infernode and total length were also increased with K250＋GA4＋7 as compared to other treatment. For 'Golden Apeldoorn', flowering was accelerated by K200＋GA4＋7, last internode was increased with N300＋GA4＋7 treatment and total length was increased in N250＋GA4＋7 treatment as compared with the standard plants. Bulb weight and number of 'Cassini', 'Christmas Marvel'and 'Golden Apeldoorn' were decreased by GA4＋7 as compared to non-treatment, and bulb diameter was not affected by GA4＋7.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.366-370
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• 2002

GaAs has become a very popular material for the fabrication of high frequency, low noise and microwave power devices. GaAs devices are also well suited for high temperature operation because of the large band gap of this material. The standard GaAs technology and device structures have to be modified for stable operation at high temperature. In this paper, AlGaAs/GaAs HBT considering stable ohmic contact at high temperature as well as thermal effect such as self-heating effect are introduced. All the data obtained study will be used as input data for the simulator and the result will be compared with an analytical model available in this study,

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.118-123
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• 1995

We have successfully fabricated a super low noise pseudomorphic HEMT(PHEMT) device with AlGaAs/InGaAs/GaAs sturcture by using improved T-Gate which have increased a large gaet cross-sectional area about two times in comparision with those of conventional T-gate processes. The PHEMSTs with 0.15$\mu$m-long and 140$\mu$m-wide gates have eshibited a super low noise characteristics, the noise figure of 0.45dB with associated gain of 10.87dB at 12GHz. The cut-off rewuqncy of the device is 94gHz with a transconductance of 418mS/mm.

• Journal of Magnetics
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• v.10 no.3
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• pp.103-107
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• 2005

Magnetotransport is a prerequisite to realization of electronic operation of spintronic devices and it would be more useful if realized at room temperature. The effects of Be codoping on GaMnAs on magnetotransport were investigated. Mn flux was varied for growth of precipitated GaMnAs layers under a Be flux for degenerate doping via low-temperature molecular beam epitaxy. Magnetotransport as well as ferromagnetism at room temperature were realized in the precipitated GaAs:(Mn,Be) layers. Codoping of Be was shown to promote formation of MnGa clusters, and annealing process further stabilized the cluster phases. The room-temperature magnetic properties of the layers originate from the ferromagnetic clusters of MnGa and MnAs embedded in GaAs. The degenerately doped metallic GaAs matrix allowed the visualization of the magnetotransport through anomalous Hall effect.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.161-165
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• 2005

We investigated selective dry etching of GaAs over AlGaAs and InGaP in high density planar inductively coupled $BCl_3/SF_6$ plasmas. The process parameters were ICP source power (0-500 W), RE chuck power (0-30W) and gas composition $(60-100\%\;BCl_3\;in\;BCl_3/SF_6)$. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching. $BCl_3/SF_6$ selective etching of GaAs showed quite good results in this study. Selectivities of GaAs $(GaAs:AlGaAs\~36:1,\;GaAs:InGaP\~45:1)$ were superior at $18BCl_3/2SF_6$, 20 W RF chuck power, 300 W ICP source power and 7.5 mTorr. Addition of $(5-15\%)SF_6\;to\;BCl_3$ produced relatively high selectivities of GaAs over AlGaAs and InGaP during etching due to decrease of etch rates of AlGaAs and InGaP (boiling points of etch products: $AlF_3\~1300^{\circ}C,\;InF_3>1200^{\circ}C$ at atmosphere) at the condition. SEM and AFM data showed slightly sloped sidewall and somewhat rough surface$(RMS\~9nm)$. XPS study on the surface of processed GaAs proved a very clean surface after dry etching. It shows that planar inductively coupled $BCl_3/SF_6$ plasmas could be a good candidate for selective dry etching of GaAs over AlGaAs and InGaP.