• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.6.1-6.1
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• 2007

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.9-11
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• 2000

To increase the device linearities and the breakdown-voltages of FETs, Al$\sub$0.25/ Ga$\sub$0.75/AS / In$\sub$0.25/Ga$\sub$0.75/As / Partially doped channel FET(DCFET) structures are proposed. The metal- insulator -semiconductor (MIS) like structures show the high gate-drain breakdown voltage(-20 V) and high linearities. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range.

• Proceedings of the Korean Vacuum Society Conference
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• 1993.02a
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• pp.29-31
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• 1993

NH3-pplasma treatment has been used for ppassivation of native-oxide-contaminated GaAs surface. Ex-situ band-gapp pphotoluminescence(ppL) measurement shows enhanced intensity for the treated surfaces. Auger electron sppectroscoppy(AES) shows that the treated surface contains nitrogen atoms but no arsenic atoms, which leads us to sppeculate that the graded GaN thin layer was formed on the surface. Based on these results, new metal-insulator-GaAs structure is ppropposed.

• Journal of electromagnetic engineering and science
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• v.4 no.4
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• pp.156-161
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• 2004

The MMIC cascode VCO is designed, fabricated, and measured for Ku-band Low Noise Blcok(LNB) system using InGaP/GaAs HBT technology. The phase noise of -116.4 dBc/Hz at 1 MHz offset with output power of 1.3 dBm is obtained at 11.526 GHz by applying 3 V and 11 mA, which is comparatively better characteristics than compared with the different configuration VCOs fabricated with other technologies. The simulated results of oscillation frequency and second harmonic suppression agree with the measured results. The phase noise is improved due to the use of the smallest value of inductor in frequency determining network and the InGaP ledge function of the technology. The chip size of $830\time781\;{\mu}m^2$ is also achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.151-154
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• 1998

We have investigated a correlation of the electrical properties of the Pd/Ge/Pd/Ti/Au ohmic contact on n-InGaAs with its microstructures for the high temperature application of compound semiconductor devices. The samples were heat-treated by the rapid thermal annealing at various temperatures. In the contact system, moderately good specific contact resistance was obtained even before annealing because of the low metals-InGaAs barrier height, and better ohmic performances were observed by annealing up to 400˚C. But the ohmic performance was degraded after annealing at 450˚C due to the increment of Pd$_2$Ga$\sub$5/ phases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.184-184
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• 2008

In this paper, a power divider with a multi-band and broadband are designed and fabricated using an InGaP/GaAs process. The design of this divider is based on multi-band because it is important in the next generation IMT-Advances system. In this design, power divider is fabricated with the frequency of 824 MHz to 894 MHz, 1.8 GHz to 2.2 GHz and 2.3 GHz to 2.4 GH for cellular, personal communication system (PCS) and Wireless Broadband Internet (WiBro). The topology of the designed power divider is based on the multi-section and fabricated using integrated passive device (IPD) library of nanoENS Inc. It is measured using network analyzer.

• Journal of Microbiology and Biotechnology
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• v.15 no.4
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• pp.809-814
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• 2005

Gibberellins (GAs) play an important role in plant growth and development. Fifteen fungi were isolated from Physalis alkekengi var francheti plant roots, and among them, four isolates showed GA-production activity. A bioassay using waito-c rice was carried out with the culture fluid of the GA-producing fungi. The GA-producing fungi were cultured for 7 days in Czapek's liquid medium at $30^{\circ}C$, 120 rpm, under dark conditions. The culture broth was concentrated 30-fold and 10 ${\mu}l$ of that concentrate was applied to 2-leaf rice sprouts. The height of the rice seedlings treated with the culture fluid of isolate PA08 was 26 cm high, while that of the seedlings treated with the wild-type Gibberella fujikuroi was 13 cm high. As such, the plant growth-promoting activity exhibited by isolate PA08 was 2 times stronger than that exhibited by the wild-type G fujikuroi. The amounts of $GA_l,\;GA_3,\;GA_4,\;GA_7,\;GA_9,\;GA_{20}$, and $GA_{24}$ in the medium were measured using gas chromatography-mass spectrometry (GC-MS), and the quantities produced by isolate PA08 were 4.85 ng/ml, 4.79 ng/ml, 17.30 ng/ml, 6.01 ng/ml, 16.61 ng/ ml, 0.08 ng/ml, and 17.30 ng/ml, respectively. Isolate PA08 was also identified as Fusarium proliferatum KGL0401 by a genetic analysis of the nucleotide sequences of the internal transcribed spacer region of the ribosomal DNA.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.5
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• pp.1-5
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• 2011

In this paper, we optimize the gate field plate structure to improve breakdown characteristics of AlGaN/GaN HEMT by two-dimensional device simulator. We have simulated using three parameters such as field-plate length, types of insulator, and insulator thickness and thereby we checked change of the electric field distribution and breakdown voltage characteristics. As optimizing field-plate structure, electric fields concentrated near the gate edge and field-plate edge are effectively dispersed. Therefore, avalanche effect is decresed, so breakdown voltage characteristic is increased. As a result breakdown characteristics of optimized gate field-plate structure are increased by about 300% compared to those of the standard structure.

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.2 no.1
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• pp.22-36
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• 2016

$^{68}Ga$ is a promising radionuclide for positron emission tomography (PET). It is a generator-produced ($^{68}Ge/^{68}Ga$-generator) radionuclide with a half-life of 68 min. The employment of $^{68}Ga$ for basic research and clinical applications is growing exponentially. Bifunctional chelators (BFCs) that can be efficiently radiolabeled with $^{68}Ga$ to yield complexes with good in vivo stability are needed. Given the practical advantages of $^{68}Ga$ in PET applications, gallium complexes are gaining increasing attention in biomedical imaging. However, new $^{68}Ga$-labeled radiopharmaceuticals that can replace $^{18}F$-labeled agents like [$^{18}F$]fluorodeoxyglucose (FDG) are needed. The majority of $^{68}Ga$-labeled derivatives currently in use consist of peptide agents, but the development of other agents, such as amino acid or nitroimidazole derivatives and glycosylated human serum albumin, is being actively pursued in many laboratories. Thus, the availability of new $^{68}Ga$-labeled radiopharmaceuticals with high impact is expected in the near future. Here, we present an overview of the different new classes of chelators for application in molecular imaging using $^{68}Ga$ PET.

• Journal of the Optical Society of Korea
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• v.20 no.3
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• pp.435-440
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• 2016

We developed a simple and real-time readout autocorrelator for several tens and sub-10fs pulses, based on the two photon absorption phenomena of a commercial GaP photodetector including a transimpedance amplifier. With a suitable gain adjustment, we demonstrated that the interferometric autocorrelation for sub-nJ pulses delivered as a high output voltage as to resolve all fringes in an autocorrelation trace with features of low noise and a low offset voltage. By fitting the measured quadratic power dependence of output voltages, we obtained the quantum efficiency of TPA for the GaP detector comparable with those of a GaAsP diode and an SHG with a thin BBO crystal. The autocorrelator of a TPA based GaP photodetector is highly suitable for sensitively measuring a few cycle pulses with a broad spectral distribution from 600 nm to 1100 nm.