• 한국세라믹학회지
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• 제40권7호
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• pp.672-676
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• 2003

Y$_3$Fe$_{5}$O$_{12}$(YIG), $Y_3$Fe$_{5}$O$_{12}$(Bi:YIG), TbBi:YIG를 (GdCa)$_3$(GaMgZr)$_{5}$O$_{12}$ (SGGG)기판 위에 Liquid Phase Epitaxy (LPE)법으로 단결정 후막을 성장시켰다. 기판회전속도, 과냉도, 성장시간을 고정하여 치환되는 원소의 종류와 양에 따라 가네트 단결정의 격자상수, Bi 치환양, 표면형상, 자기적 특성을 조사하였다. TbBi:YIG 조성의 경우 격자상수는 12.500 $\AA$으로 기판의 격자상수인 12.496 $\AA$에 근접하게 나타났으며, 포화자계는 150 Oe로 향상된 결과가 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.394-394
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• 2013

The spin-orbit interaction has received great attention in the field of spintronics, because of its property and applicability. For instance, the spin-orbit interaction induces spin precession which is the key element of spin transistor proposed by Datta and Das, since frequency of precession can be controlled by electric field. The spin-orbit interaction is classified according to its origin, Dresselhaus and Rashba spin-orbit interaction. In particular, the Rashba spin-orbit interaction is induced by inversion asymmetry of quantum well structure and the slope of conduction band represents the strength of Rashba spin-orbit interaction. The strength of spin-orbit interaction is experimentally obtained from the Shubnikov de Hass (SdH) oscillation. The SdH oscillation is resistance change of channel for perpendicular magnetic field as a result of Zeeman spin splitting of Landau level, quantization of cyclotron motion by applied magnetic field. The frequency of oscillation is different for spin up and down due to the Rashba spin-orbit interaction. Consequently, the SdH oscillation shows the beat patterns. In many research studies, the spin-orbit interaction was treated as a tool for electrical manipulation of spin. On the other hands, it can be considered that the Rashba field, effective magnetic field induced by Rashba effect, may interact with external magnetic field. In order to investigate this issue, we utilized InAs quantum well layer, sandwiched by InGaAs/InAlAs as cladding layer. Then, the SdH oscillation was observed with tilted magnetic field in y-z plane. The y-component (longitudinal term) of applied magnetic field will interact with the Rashba field and the z-component (perpendicular term) will induce the Zeeman effect. As a result, the strength of spin-orbit interaction was increased (decreased), when applied magnetic field is parallel (anti-parallel) to the Rashba field. We found a possibility to control the spin precession with magnetic field.

• 한국재료학회지
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• 제22권4호
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• pp.195-201
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• 2012

$Ce^{3+}$-doped yttrium aluminum gallium garnet (YAGG:$Ce^{3+}$), which is a green-emitting phosphor, was synthesized by solid state reaction using ${\alpha}$-phase or ${\gamma}$-phase of nano-sized $Al_2O_3$ as the Al source. The processing conditions and the chemical composition of phosphor for the maximum emission intensity were optimized on the basis of emission intensity under vacuum UV excitation. The optimum heating temperature for phosphor preparation was $1550^{\circ}C$. Photoluminescence properties of the synthesized phosphor were investigated in detail. From the excitation and emission spectra, it was confirmed that the YAGG:$Ce^{3+}$ phosphors effectively absorb the vacuum UV of 120-200 nm and emit green light positioned around 530 nm. The crystalline phase of the alumina nanoparticles affected the particle size and the luminescence property of the synthesized phosphors. Nano-sized ${\gamma}-Al_2O_3$ was more effective for the achievement of higher emission intensity than was nano-sized ${\alpha}-Al_2O_3$. This discrepancy is considered to be because the diffusion of $Al^{3+}$ into $Y_2O_3$ lattice is dependent on the crystalline phase of $Al_2O_3$, which affects the phase transformation of YAGG:$Ce^{3+}$ phosphors. The optimum chemical composition, having the maximum emission intensity, was $(Y_{2.98}Ce_{0.02})(Al_{2.8}Ga_{1.8})O_{11.4}$ prepared with ${\gamma}-Al_2O_3$. On the other hand, the decay time of the YAGG:$Ce^{3+}$ phosphors, irrespective of the crystalline phase of the nano-sized alumina source, was below 1 ms due to the allowed $5d{\rightarrow}4f$ transition of the $Ce^{3+}$ activator.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.308.1-308.1
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• 2014

반도체에서 양자점이 포함된 나노복합체의 전자적 구조와 성질에 대한 연구는 기본적인 양자 물리적 현상을 이해하고 전자소자 및 광소자의 다양한 응용 분야를 파생할 수 있기 때문에 많은 관심을 갖고 있다. 나노복합체를 구성하는 각각의 양자우물과 양자점에 대한 실험과 이론에 대한 연구는 많이 진행되고 있으며, 양자우물 안에 양자점이 삽입된 나노복합체에 대한 연구는 상대적으로 미흡한 상태이다. 또한 양자우물 안에 자발 형성된 양자점이 삽입된 나노복합체에 대한 전기적 특성 및 광학적 특성에 대한 연구는 많으나, 양자우물 안에 삽입된 양자점에 대한 전자적 구조에 대한 연구는 거의 없다. 양자우물 안에 양자점을 형성한 나노복합체 구조를 사용하여 제작한 전자소자와 광소자의 효율을 향상시키기 위해서는 이 복합 구조의 전자적 성질에 대한 연구가 필요하다. 본 연구에서는 단일 양자우물 안에 자발 형성된 InAs 양자점을 포함한 나노복합체의 전자적 특성을 분석하기 위하여 변형효과와 비포물선효과를 포함한 전자적 부띠 에너지에 대하여 비교 분석하였다. InAs 양자점은 20 nm의 직경을 갖고 있으며, GaAs 기판위에 버퍼층과 AlAs 층을 사용한 양자우물 구조에 삽입되었다. 단일 양자우물 안에 삽입된 양자점의 전자적 구조는 형상 의존 변형효과와 비포물선 효과를 고려한 쉬뢰딩거 방정식을 삼차원 가변 메시 유한차분법을 사용하여 수치해석 방법으로 분석하였다. 수치해석 방법으로 양자우물의 우물 폭의 영향을 받는 양자점의 크기변화에 따라 삼차원적인 전자 및 정공의 부띠 에너지와 기저상태 및 여기 상태의 파동 함수를 계산하였다. 이러한 결과는 나노복합체 안에 형성된 InAs 양자점의 전자적 특성을 이해하는데 도움을 주며, InAs가 포함된 나노복합체를 사용한 전자 소자와 광소자 연구에 기초 자료로 사용될 수 있다.

• Fisheries and Aquatic Sciences
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• 제18권1호
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• pp.109-113
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• 2015

Three leptocephali (22.2, 22.7, 56.0 mm in total length) collected from the East/Japan Sea were identified by morphological and genetic analyses as belonging to the genus Scolecenchelys (Anguilliformes, Ophichthidae). Morphologically, the specimens were characterized by 148-158 myomeres, 10 gut swellings, dorsal fin origin above middle of the body, and 6 postanal melanophores between the anus and the caudal margin. An analysis of an 849-base pair 12S rRNA sequence of mitochondrial DNA showed that sequences are concordant with those of adult Scolecenchelys fuscogularis (genetic distance = 0.001). Furthermore total number of myomeres is consistent with the total number of vertebrae in adult S. fuscogularis. This study provides the first description of the morphological characteristics of S. fuscogularis leptocephali and their variations with size. The Korean name of S. fuscogularis is "Ga-neun-mul-baem", established by Ji et al. (2012).

• 수산해양기술연구
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• 제57권3호
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• pp.205-213
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• 2021

Two specimens of Hemitrygon izuensis (395.8-471.5 mm in disc width), belonging to the family Dasyatidae (Myliobatiformes), were collected from the waters off north-eastern Jeju-do Island in June 2016 and Pohang in August 2019. This species was characterized by having no spots on dorsal side of disc, white ventral tail fold and short preorbital snout length (15.6-18.3% of disc width). This species is similar to H. akajei and H. sinensis reported in Korea, but differs in small denticles on mid-line of dorsal surface of disc (absent in H. izuensis vs. present in H. akajei and H. sinensis), the length of ventral tail fold (28.1-31.0% in H. izuensis vs. 48.0-48.6% in H. akajei vs. 45.0% in H. sinensis), color of ventral tail fold (white in H. izuensis vs. black in H. akajei and H. sinensis) and small tubercles on the posterior part of tail (absent in H. izuensis vs. present in H. akajei and H. sinensis). We suggest a Korean name for H. izuensis as "I-ju-gal-saeg-ga-o-li" following Kim et al. (2019).

• 센서학회지
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• 제13권2호
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.220-222
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• 2005

We can classify two cases in a way to observe an atom of gas state or a molecule using the laser. First case is way to use dispersion phenomenon like Rayleigh scattering, Thomson scattering, Mie scattering, Raman Scattering. And Second case is a way to use change phenomenon like a LAS (Laser Absorption Spectroscopy), LIF (Laser Induced Fluorescent). In this paper, we have measured the meta-stable density and the distribution by using a LAS method in Xe discharge lamp. The laser absorption spectroscopy (LAS) is useful to investigate the behavior of such species. The xenon atoms in the $1S_4$ and $1S_5$ generate excited $Xe^*$(147nm) and $Xe_{2}^*$(173nm) dimers in Xe plasma. It is found that the intensity of VUV 147nm emission is proportional to that of the IR 828nm emission, and the VUV 173nm emission is roughly proportional to that of the IR 823nm emission. The laser is used CW laser that consist of AlGaAs semiconductor and energy level is used 823.16nm wavelength. We measured signal of monochrometer from the lamp center while will change a discharge electric current by 6mA in 3mA and calculated meta-stable state density of a xenon atom through a measured value.

• Asian Pacific Journal of Cancer Prevention
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• 제17권1호
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• pp.387-393
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• 2016

Background: CYP1A1 is a candidate gene for low-penetrance breast cancer susceptibility, as it plays an important role in the metabolism of carcinogens and estrogens. Purpose: The objective of this study was to assess the association between M2 (A2455G, Ile462Val) and M4 (C2453A, Thr461Asn) polymorphisms in CYP1A1 and breast cancer risk among Jordanian women and in subgroups stratified by menopausal status and smoking history. Materials and Methods: Blood samples were collected from 112 breast cancer female patients and 115 age-matched controls who underwent breast cancer screening with imaging and showed negative results (BI-RADS I or BI-RADS II). Genotyping was performed using the PCR-RFLP technique. Results: No statistically significant overall association was found between breast cancer risk and CYP1A1 M2 genotypes (p= 0.55; OR = 0.77; 95% CI= 0.32 - 1.83) nor with the M4 polymorphism (p= 0.95; OR= 0.95; 95% CI= 0.51 - 1.88). Analysis of subgroups defined by menopausal status or smoking history also revealed no association with these polymorphisms. Furthermore, the four identified haplotypes (AC; AA; GC and GA) were equally distributed among cases and controls, and haplotype analysis showed a strong linkage disequilibrium of both studied loci in either cases or controls (D'=1). Conclusions: Based on the study results, CYP1A1 M2 and M4 polymorphisms do not seem to play a major role in breast cancer risk among Jordanian females.