• Structural Engineering and Mechanics
• /
• v.51 no.4
• /
• pp.547-564
• /
• 2014

This study focuses on the application of an active tuned mass damper (ATMD) for controlling the seismic response of an 11-story building. The control action is achieved by combination of a fuzzy logic controller (FLC) and Particle Swarm Optimization (PSO) method. FLC is used to handle the uncertain and nonlinear phenomena while PSO is used for optimization of FLC parameters. The FLC system optimized by PSO is called PSFLC. The optimization process of the FLC system has been performed for an 11-story building under the earthquake excitations recommended by International Association of Structural Control (IASC) committee. Minimization of the top floor displacement has been used as the optimization criteria. The results obtained by the PSFLC method are compared with those obtained from ATMD with GFLC system which is proposed by Pourzeynali et al. and non-optimum FLC system. Based on the parameters obtained from PSFLC system, a global controller as PSFLCG is introduced. Performance of the designed PSFLCG has been checked for different disturbances of far-field and near-field ground motions. It is found that the ATMD system, driven by FLC with the help of PSO significantly reduces the peak displacement of the example building. The results show that the PSFLCG decreases the peak displacement of the top floor by about 10%-30% more than that of the FLC system. To show the efficiency and superiority of the adopted optimization method (PSO), a comparison is also made between PSO and GA algorithms in terms of success rate and computational processing time. GA is used by Pourzeynali et al for optimization of the similar system.

• Journal of the Korean earth science society
• /
• v.26 no.8
• /
• pp.800-808
• /
• 2005

Elemental mobility during the weathering of granite in the Gwangju Hyangdeung area was investigated using ICP-MS analysis. It appeared that Al, Fe, Ti, K were lost from the profile, whereas Si, Ca, Na Mg, P and Mn were immobile during chemical weathering. In less weathered soil, large enrichment of K and Ti were found relative to Al, whereas other elements such as Si, Ca, Na, Mg and P are deplete. Fe content is constant throughout the weathered profiles. Amounts of Rb, Sr, Y, Cs, Pb, Th and U increased toward the surface. Nb, and Co have accumulated in the deepest parts of the weathered soil profile. These results agree with similar published studies. In addition, the analytical data shows that Ba and Ga increased, while Cu, Zn, Cr and Ni were relatively constant in this area. REE tend to increase in most samples, while LREEs, relative to Al, were enriched in the lower and upper saprolite. HREEs were enriched in the lower and upper saprolite.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.226-229
• /
• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Korean Journal of Materials Research
• /
• v.30 no.4
• /
• pp.204-210
• /
• 2020

ZnO thin films are of considerable interest because they can be customized by various coating technologies to have high electrical conductivity and high visible light transmittance. Therefore, ZnO thin films can be applied to various optoelectronic device applications such as transparent conducting thin films, solar cells and displays. In this study, ZnO rod and thin films are fabricated using aqueous chemical bath deposition (CBD), which is a low-cost method at low temperatures, and environmentally friendly. To investigate the structural, electrical and optical properties of ZnO for the presence of citrate ion, which can significantly affect crystal form of ZnO, various amounts of the citrate ion are added to the aqueous CBD ZnO reaction bath. As a result, ZnO crystals show a nanorod form without citrate, but a continuous thin film when citrate is above a certain concentration. In addition, as the citrate concentration increases, the electrical conductivity of the ZnO thin films increases, and is almost unchanged above a certain citrate concentration. Cu(In,Ga)Se₂ (CIGS) solar cell substrates are used to evaluate whether aqueous CBD ZnO thin films can be applicable to real devices. The performance of aqueous CBD ZnO thin films shows performance similar to that of a sputter-deposited ZnO:Al thin film as top transparent electrodes of CIGS solar cells.

• The Journal of Pediatrics of Korean Medicine
• /
• v.29 no.4
• /
• pp.29-38
• /
• 2015

Objectives We aimed to identify the effectiveness of photobiomodulation using low level laser therapy (LLLT), light emitting diode (LED) and others on the growth of the length of the growth plate by reviewing literatures. Methods We searched literatures using PubMed, Science Direct, CINAHL, Korea Traditional Knowledge Portal (KTKP), Oriental Medicine Advanced Searching Integrated System (OASIS), China Knowledge Resource Integrated Database (CNKI), Japan Science and Technology Information Aggregator, Electronic (J STAGE), and Japan National Institute of Informatics Scholarly and Academic Information Navigator (CiNii) using the keywords "Growth plate" "Epiphyseal growth" "Epiphyseal plate" and "Laser", "light emitting diode (LED)", "near-infrared light", and "photobiomodulation". Search range included only original article which provided English abstract were selected. The search strategy contained no language limitation. Results A total 556 studies were found. Then, 551 were excluded by scanning titles and abstracts and finally 5 articles were selected. Five articles were RCTs using rodents. Two of the 5 articles used InGaAlP Laser (630-685 nm), and the other 3 articles used GaAlAs Laser (780, 820, and 870 nm) to investigated the effects of LLLT on the growth of the length of the epiphyseal cartilage and the number of chondrocytes and thickness of each zone of the epiphyseal cartilage. Two articles concluded that LLLT had a beneficial effect on the longitudinal growth of the growth plate. In growth of the epiphyseal plate, there were no significant differences in others. Conclusions It is might that LLLT influenced on the growth of epiphyseal plate by positive affect. However, further rigorous RCTs are warranted.

• Journal of the Korean Ceramic Society
• /
• v.48 no.4
• /
• pp.328-333
• /
• 2011

The influence of Al-doped ZnO (AZO) thin films degraded under high temperature and damp heat on the performance deterioration of Cu(In,Ga)$Se_2$ (CIGS) solar cells was investigated. CIGS solar cells with AZO/CdS/CIGS/Mo structure were prepared on glass substrate and exposed to high temperature ($85^{\circ}C$) and damp heat ($85^{\circ}C$/85% RH) for 1000 h. As-prepared CIGS solar cells had 64.91% in fill factor (FF) and 12.04% in conversion efficiency. After exposed to high temperature, CIGS solar cell had 59.14% in FF and 9.78% in efficiency, while after exposed to damp heat, it had 54.00% in FF and 8.78% in efficiency. AZO thin films in the deteriorated CIGS solar cells showed increases in resistivity up to 3.1 times and 4.4 times compared to their initial resistivity after 1000 h of high temperature and damp heat exposure, respectively. These results can be explained by the decreases in carrier concentration and mobility due to diffusion or adsorption of oxygen and moisture in AZO thin films. It can be inferred that decreases in FF and conversion efficiency were caused by an increase in series resistance, which resulted from an increase in resistivity of AZO thin films degraded under high temperature and damp heat.

• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.609-610
• /
• 2006

A 77GHz MMIC transceiver module consisting of a power amplifier, a low noise amplifier, a drive amplifier, a frequency doubler and a down-mixer has been developed for automotive forward-looking radar sensor. The MMIC chip set was fabricated using $0.15{\mu}m$ gate-length InGaAs/InAlAs/GaAs mHEMT process based on 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20dB from $76{\sim}77GHz$ with 15.5dBm output power. The chip size is $2mm{\times}2mm$. The low noise amplifier achieved a gain of 20dB in a band between $76{\sim}77\;GHz$ with an output power of 10dBm. The chip size is $2.2mm{\times}2mm$. The driver amplifier exhibited a gain of 23dB over a $76{\sim}77\;GHz$ band with an output power of 13dBm. The chip size is $2.1mm{\times}2mm$. The frequency doubler achieved an output power of -16dBm at 76.5GHz with a conversion gain of -16dB for an input power of 10dBm and a 38.25GHz input frequency. The chip size is $1.2mm{\times}1.2mm$. The down-mixer demonstrated a measured conversion gain of over -9dB. The chip size is $1.3mm{\times}1.9mm$. The transceiver module achieved an output power of 10dBm in a band between $76{\sim}77GHz$ with a receiver P1dB of -28dBm. The module size is $8{\times}9.5{\times}2.4mm^3$. This MMIC transceiver module is suitable for the 77GHz automotive radar systems and related applications in W-band.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.4
• /
• pp.28-39
• /
• 1993

In the international BISDN used satellite, the laser that has large BW has to be used as a carrier for transmitting a lot of visual, vocal, and data information. Interoptical satellite communication has now developed in theoretical and practical aspects. But the optical communication, between satellite and earth station, is hindered by atmospheric absorption, scattering, and turbulence. In this paper, it was supposed that 1Gbps information was transmitted by binary FSK and 50mW AlGaAs semiconductor laser was used as a optical source in the satellite communication link between geosynchronous orbit satellite and earth station. We analyzed the BER and the entire diameter of the noncoherently combined optical heterodyne receiver as el evation angle, and determined the number of the optical heterodyne rece ivers, which is necessary for the BER of the receiver to be less than 10$^{-9}$ by computer simulation under the clear weather condition. It is shown that the BER and the number of the optical heterodyne receivers decrease as the elevation angle increases. In the region used the same number of the optical heterodyne receivers, it is shown that the entire diameter of the receiver increases but the BER decreases as the elevation angle increases.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2007.02a
• /
• pp.116-116
• /
• 2007

• Journal of Oral Medicine and Pain
• /
• v.21 no.1
• /
• pp.25-36
• /
• 1996

To investigate the effect of low level laser therapy, the author selected 37 dental students with tender points in both masseters and trapeziuses, also measured maximum comportable opening(MCO), Numerical analog scale(NAS) and pressure pain threshold (PPT). 20 subjects were assigned randomly and were treated with GaAlAs diode laser after ultrasound. The other 17 subjects were treated with ultrasound and laser without irradiation. All the subjects were treated after 2 and 4 day respectively and were examined again after 6 days. And the obtained results were as follows : 1. The MCO of irradiated group increased more significantly after treatment than non-irradiated group. 2. The NAS of irradiated group decreased more significantly after treatment than non-irradiated group. 3. The PPT or irradiated group increased more significantly after treatment than non-irradiated group.