• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.599-602
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• 2005

In this paper, we have performed a study that modifies the CPW Pad configurations to improve an $f_{max}$ characteristic of metamorphic HEMT. To analyze the CPW Pad structures of MHEMT, we use the ADS momentum simulator developed by $Agilent^{TM}$. Comparing the employed structure (G/W = 40/100 m), the optimized structure (G/W = 20/25 m) of CPW MHEMT shows the increased $S_{21}$ by 2.5 dB, which is one of the dominant parameters influencing the $f_{max}$ of MHEMT. To compare the performances of optimized MHEMT with the employed MHEMT, DC and RF characteristics of the fabricated MHEMT were measured. In the case of optimized CPW MHEMT, the measured saturated drain current density and transconductance $(g_m)$ were 693 mA/mm and 647 mS/mm, respectively. RF measurements were performed in a frequency range of $0.1{\sim}110$ GHz. A high $S_{21}$ gain of 5.5 dB is shown at a millimeter-wave frequency of 110 GHz. Two kinds of RF gains, $h_{21}$ and maximum available gain (MAG), versus the frequency, and a cut-off frequency ($f_t$) of ${\sim}154$ GHz and a maximum frequency of oscillation ($f_{max}$) of ${\sim}358$ GHz are obtained, respectively, from the extrapolation of the RF gains for a device biased at a peak transconductance. An optimized CPW MHEMT structure is one of the first reports among fabricated 0.1 m gate length MHEMTs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.63-73
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• 2004

A simple analytical model has been presented for the study of the optical bistability using a $GaAs-Al_{0.32}Ga_{0.68}As$ multiple quantum well (MQW) p-i-n diode structure. The calculation of the optical absorption is based on a semi-emperical model which is accurately valid for a range of wells between 5 and 20 nm and the electric field F< 200kV/cm . The electric field dependent analytical expression for the responsivity is presented. An attempt has been made to derive the analytical relationship between the incident optical power ( $(P_{in})$ ) and the voltage V across the device when the diode is reverse biased by a power supply in series with a load resistor. The relationship between $P_{in}$ and $P_{out}$ (i.e. transmitted optical power) is also presented. Numerical results are presented for a typical case of well size $L_Z=10.5nm,\;barrier\;size\;L_B=9.5nm$ optical wave length l = 851.7nm and electric field F? 100kV/cm. It has been shown that for the values of $P_{in}$ within certain range, the device changes its state in such a way that corresponding to every value of $P_{in}$ , two stable states and one unstable state of V as well as of $P_{out}$ are obtained which shows the optically controlled bistable nature of the device.

• Korean Journal of Optics and Photonics
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• v.5 no.2
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• pp.278-285
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• 1994

We investigated the spectral characteristics for temperature and driving current change in visible laser diode. As a result of spectrum analysis, the ratio of frequency change for temperature and driving current change were about $33 GHz/^{\circ}C$, 6.6 GHz/mA in the region which was not mode hopping range. Compared to the sharp mode hopping in the near IR single mode AlGaAs lasers, the visible laser diode showed relatively broad multimode operation in the mode hopping region. We performed the experiment of injection-locking characteristics analysis for visible laser diode. Locking half bandwidth(LHBW) was measured 0~5.0 GHz for $0~25\muW$ input power and it was dependent on the input power. Also, LHBW for polarization angle was dependent on the difference of polarization angle between master laser and slave laser. The phase change of injection-locked output beam of the slave laser diode as a function of the drive current was measured in the interferometer which was composed of master laser and slave laser. The ratio of phase change with the slope of 5.0~1.3 rad/mA was obtained within injection-locking range for the change of $2~25\muW$ input power. power.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.35 no.2
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• pp.120-124
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• 2009

The concept of biostimulation of wounds by low-level laser therapy(LLLT) is attracting considerable attention. Although its effect on whole tissues has been studied quite extensively, the biological and cellular mechanisms underlying LLLT have not been clarified. In an experimental radius fracture in rabbits, Tang and Chai reported that LLLT enhanced the activity of red blood cells, macrophages, fibroblasts, chondrocytes, and osteoclasts within the fracture area. The purpose of the present study was to evaluate the effect of LLLT with a GaAlAs diode laser device on bone healing in rabbit mandibular fractures. We use 12 rabbits for this study. All rabbits were fractured mandible angle area using saw in anesthetic condition. In control group(n=6), none treatment was performed at fracture site. In experimental group(n=6), LLLT with a GaAlAs diode laser was radiated at fracture site daily for 7 days. All rabbits were sacrificed at 6 weeks later from performed fracture day. We studied the immunohistochemical staining of CD34 and Vimentin and the histochemical analysis for calcium and phosphorus content. The results were as follows. 1. In the histological and immunohistological staining, after 6week, fibroblasts, osteogenic cells and collgen fibers were observed more in experimental group than in control group. 2. In the histochemical analysis, the amount of calcium and phosphorus contents of the experimental group were more than the control group. From the results obtained, we suggest that the bone healing is stimulated by low-level laser irradiation in bone fractures.

• The Journal of the Petrological Society of Korea
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• v.13 no.3
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• pp.142-151
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• 2004

The metamorphic rocks of Yongin-Anseong area in Gyeonggi massif are composed of high-grade gneisses and schists which are considered as Precambrian basement, and Jurassic granite which intruded the metamorphic rocks. In this paper, we discuss the geochemical characteristics of metamorphic rocks and granites in this area based on REE and Nd isotope geochemistry. And we also discuss the petrogenetic relationship between metamorphic rocks and granites in this area. Most of Nd model ages (T$\_$DM/$\^$Nd/) from the metamorphic rocks range ca. 2.6Ga～2.9Ga which are correspond to the main crustal formation stage in Gyeonggi massif by Lee et. al. (2003). And Nd model ages show that the source material of quartzofeldspathic gneiss is slightly older than that of biotite banded gneiss. In chondrite-normalized rare earth element pattern, the range of (La/Yb)$\_$N/ value from biotite banded gneiss is 37～136, which shows sharp gradient and suggests that biotite banded gneiss was originated from a strongly fractionated source material. However, that of amphibolite is 4.65～6.64, which shows nearly flattened pattern. Particularly, the chondrite normalized REE patterns from the high-grade metamorphic rocks show the REE geochemisoy of original source material before metamorphism. In addition, the values of (La/Yb)$\_$N/ and Nd model ages of granite are 32～40 and 1.69Ga～2.08Ga, respectively, which suggest that the source material of granite is different from that of Precambrian basement such as biotite banded gneiss and quartzofeldspthic gneiss in the area.

• The Journal of the Petrological Society of Korea
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• v.5 no.2
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• pp.142-160
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• 1996

Petrological and geochemical characteristics of A-type granite were studied from the Namsan and Tohamsan granites in the vicinity of Kyeongju city, southeastern Korea. The Namsan granite consists of hypersolvus alkali-feldspar granite in the northern part and subsolvus alkali-feldspar to biotite granite in the southern part. This hypersolvus granite usually has miarolitic cavities and is characteristically composed of quartz, single homogeneous one-feldspar (alkali feldspar) forming tabular microperthite crystals, or micrographic intergrowth with quartz, and interstitial biotite (Fe-rich annite), alkali amphibole (riebeckitic arfvedsonite) and fluorite. Petrographic and petrochemical characteristics indicate that the hypersolvus granite and subsolvus granite from the Namsan belogn to the A-type and I-type granitoid, respectively. The A-type granite is petrochemically distinguished from the I-type Bulgugsa granites of Late Cretaceous in South Korea, by higher abundance of $SiO_2$, $Na_2O$, $Na_2O+K_2O$, large highly charged cations such as Rb, Nb, Y, Zr, Ga, Th, Ce. U the REEs and Ga/Al ratio, and lower abundance of $TiO_2$, $Al_2O_3$, CaO, $P_2O_5$, MnO, MgO, Ba, Sr, Eu. The total abundance of REEs is 293 ppm to 466 ppm, showing extensively fractionated granitic compositon, and REEs/chondrite normalized pattern shows flat form with strong Eu '-' anomaly ($Eu/Eu^{\ast}$=0.03-0.05). A-type granite from the Namsan area is thought to have been generated late in the magmatic/orogenic cycle after the production of I-type granite and by direct, high-temperature partial melting of melt-depleted, relatively dry tonalitic/granulitic lower crustal material with underplating by mantle-derived basaltic magmas associated with subduction.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.688-688
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• 2013

Al-doped ZnO (AZO) thin films have attracted a lot of attention as a cheap transparent conducting oxide (TCO) material that can replace the expensive Sn-doped In2O3. In particular, AZO thin films are widely used as a window layer of chalcogenide-based thin film solar cells such as Cu(In,Ga)Se2 and Cu2ZnSnS4 (CZTS). Mostly important requirements for the window layer material of the thin film solar cells are the high transparency and the low sheet resistance, because they influence the light absorption by the activelayer and the electron collection from the active layer, respectively. In this study, we prepared the AZO thin films by RF magnetron sputtering using a ZnO/Al2O3 (98：2wt%) ceramic target, and the effect of the sputtering condition such as the working pressure, RF power, and the working distance on the optical, electrical, and crystallographic properties of the AZO thin films was investigated. The AZO thin films with optimized properties were used as a window layer of CZTS thin film solar cells. The CZTS active layers were prepared by the electrochemical deposition and the subsequent sulfurization process, which is also one of the cost-effective synthetic approaches. In addition, the solar cell properties of the CZTS thin film solar cells, such as the photocurrent density-voltage (J-V) characteristics and the external quantum efficiency (EQE) were investigated.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.2
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• pp.75-80
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• 1994

AlAs/GaAs/AlAs RTDs(Resonant Tunneling Diodes) are fabricated and current-voltage properties of them are measured. At room temperature, peak to valley ratio is 2.4 NOT.AND.OR logic gates and Flip-Flop are fabricated using the bistable characteristics of RTDs. Although NOT.AND.OR logic gates need 5~8 transistors. only one RTD is sufficient to fabricate the logic gates. Since the switching time is very short(<10$^12$sec), it is possible to drive the semiconductor circuits fast and integrate them very large. And it is convinced the possibility of integrating RTDs to multilevel logic circuits by observing two peaks of similar current in the serial connection of two RTDs.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.530-535
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• 1999

W made a near-field optical microscope(NSOM) apparatus and evaluated it. To control the distance between a tip and a sample, we used a piezoelectric translator and a He-Ne laser, and consequently obtained the spatial resolution better than 100nm. For the semiconductor spectroscopic applications, we performed photoluminescence and photocurrent experiments on the GaAs/AlGaAs MQWs samples. In the case of PL experiment, we obtained the low signal to nose ration due to the extremely small power of a light source passing through the nanometric optical fiber tip. However photocurrent experiment shows a hundred times better signal to noise than that of PL experiment. This suggests that photocurrent experiment using NSOM have the possibility to provide the spatial resolution better than 10nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1094-1097
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• 2003

In this paper, the cavity-length-dependent spectral and temporal characteristics of a V-groove AlGaAs-GaAs quantum wire (QWR) laser at each subband were investigated. At short cavity lasers less than $300{\mu}m$, a discrete wavelength switching from the n=1 to the n=2 subband occurred due to the increased threshold gain, resulting from the increased cavity loss. Using the characteristic of the wavelength shift from n=1 to the n=2 subband with shortening the cavity length, ultrafast lasing behaviors under gain switching at the n=1 and the n=2 subband transition were demonstrated and compared.