• 제목/요약/키워드: InAs/GaSb

검색결과 78건 처리시간 0.028초

광결정 표면을 이용한 드론용 마이크로 연소기 열광전 에너지변환시스템의 성능해석 (Performance Analysis of Photonic Crystal Enhanced Micro-Combustor Thermophotovoltaic System for Drone Application)

  • 이정헌
    • 한국군사과학기술학회지
    • /
    • 제24권3호
    • /
    • pp.309-316
    • /
    • 2021
  • In this paper, the electrical power output of the micro-combustor thermophotovoltiac(TPV) system was analyzed. The system consists of a micro-combustor, photonic crystals(PhCs), and photovoltaic cells(PV cells). The system has a micro-combustor that can achieve over 1,000 K surface temperature by consuming 2.5 g/h hydrogen fuel. Also, this system incorporates current state-of-the-art PhCs surfaces(2D Ta PhCs and Tandem Filter) to increase electrical power output. In addition, InGaAsSb PV cell, which bandgap is 0.55 eV, was applied to convert a wide range of radiative energy. The performance analysis shows that a single micro-combustor TPV system can produce 0.4 W ~ 27.7 W electrical power with the temperature change of emitter(900 K ~ 1,500 K) and PV cell(250 K ~ 400 K).

Ge계 열전센서의 출력특성 (Output Property of Ge-Thermopile Sensor)

  • 박수동;김봉서;오민욱
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
    • /
    • pp.265-266
    • /
    • 2006
  • It was well known that thermopile was quiet a competent sensor using to probe the temperature of "hot point" where the temperature can be off the temperature-limitation for normal operation of the main electrical power equipment. In the present work, we aimed for developing new Ge-thermopile materials which can be using a non-contact temperature sensors at various hot-point of the power equipment and evaluation of its output property. As a results of the present works, a new thermopile which were composed Ga-poded p-type and Sb-doped n-type in Ge-semiconductor were designed and manufactured by MBE(Molecular Beam Epitaxy) process and showed superior sensitivity at room temperature.

  • PDF

Surface Preparation of III-V Semiconductors

  • 임상우
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
    • /
    • pp.86.1-86.1
    • /
    • 2015
  • As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

  • PDF

A proton induced X-ray emission (PIXE) analysis of concentration of major/trace and toxic elements in broiler gizzard and flesh of Tehsil Gujar Khan area in Pakistan

  • Nadeem, Khawar;Hussain, Javaid;Haq, Noaman Ul;Haq, A. Ul;Akram, Waheed;Ahmad, Ishaq
    • Nuclear Engineering and Technology
    • /
    • 제51권8호
    • /
    • pp.2042-2049
    • /
    • 2019
  • Ten gizzard and three flesh samples of the broiler were collected from different locations in Tehsil Gujar Khan District Rawalpindi, Pakistan. The samples were dried, crushed and ground. Pellets were prepared by pressing the powder of the samples and that of the Bovine liver 1577c reference material obtained from NIST, USA. Proton induced X-ray emission (PIXE) installed at National Center for Physics, Islamabad, Pakistan has been used as a reliable and improved technique to determine concentration of various major/trace and toxic elements e.g. S, Cl, K, Ca, Cl, Fe, Cu, Mn, Co, Zn, Ti, Cd, Ga, Cr, V and Ni, in the Gizzard and Flesh samples of the broiler. The concentrations of all the detected elements in the samples are statistically significant. The certified and measured values of the elements in the reference material were in agreement with each other within a deviation of 7%. S, Cl, K and Ca are within tolerable limits and are good for human consumption. Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn were more than the acceptable limits of World Health Organization, WHO whereas Ga, As, Sn, Sb and Pb are not detected in most of the samples.

Assessment of Earth Remote Sensing Microsatellite Power Subsystem Capability during Detumbling and Nominal Modes

  • Zahran M.;Okasha M.;Ivanova Galina A.
    • Journal of Power Electronics
    • /
    • 제6권1호
    • /
    • pp.18-28
    • /
    • 2006
  • The Electric Power Subsystem (EPS) is one of the most critical systems on any satellite because nearly every subsystem requires power. This makes the choice of power systems the most important task facing satellite designers. The main purpose of the Satellite EPS is to provide continuous, regulated and conditioned power to all the satellite subsystems. It has to withstand radiation, thermal cycling and vacuums in hostile space environments, as well as subsystem degradation over time. The EPS power characteristics are determined by both the parameters of the system itself and by the satellite orbit. After satellite separation from the launch vehicle (LV) to its orbit, in almost all situations, the satellite subsystems (attitude determination and control, communication and onboard computer and data handling (OBC&DH)), take their needed power from a storage battery (SB) and solar arrays (SA) besides the consumed power in the EPS management device. At this point (separation point, detumbling mode), the satellite's angular motion is high and the orientation of the solar arrays, with respect to the Sun, will change in a non-uniform way, so the amount of power generated by the solar arrays will be affected. The objective of this research is to select satellite EPS component types, to estimate solar array illumination parameters and to determine the efficiency of solar arrays during both detumbling and normal operation modes.

In Plane 방식의 P-N Junction 박막열전소자 제작 (Design of In Plane P-N Junction Thin-Film Thermoelectric Device)

  • 권성도;김은진;이윤주;윤석진;주병권;김진상
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
    • /
    • pp.178-178
    • /
    • 2008
  • 초소형 박막의 열전 발전모듈은 작은 부피와 한번 설치시 교체없이 지속적인 전원공급으로 소형의 센서 노드에 전원으로 각광 받고 있다. 이에 본 논문에서는 In Plane방식의 PIN Junction의 박막형 열전소자를 제작하여 보았다. 열전 박막인 P-type의 $BiSbTe_3$와 N-type의 $Bi_2Te_3$은 (001)GaAs 기판에 MOCVD(Metal Organic Chemical Vapour Deposition)방식으로 성장하였으며 전극으로는 E-Beam Evaporator를 이용하여 금(Au), 알루미늄(Al)을 사용하였다. 열전박막의 두께는 MOCVD의 성장시간과 온도 MO-x 가스의 압력으로 조절하여 주었다. 제작결과 1Pairs 당 약 $63{\mu}V$/K을 나타내었다.

  • PDF

P-N Junction Type 박막열전소자제작 및 특성 (Design of P-N Junction Type Thin-Film Thermoelectric Device and their Device Characteristics)

  • 권성도;송현철;정대용;윤석진;주병권;김진상
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
    • /
    • pp.142-142
    • /
    • 2007
  • Micro thermoelectric generator has been attractive for the alternative power source to operate the wireless sensor node. In this paper, we designed the column-type micro thermoelectric device and their device characteristics were measured. n-type Bi2Te3 and p-type BiSbTe3 thermoelectric thin films were grown on (001) GaAs substrates by metal organic chemical vapour deposition (MOCVD) and they were pattemed. The height of thermoelectric film were controlled by the deposition time, temperature and MO-x gas pressure. Seebeck coefficient was measured at room temperature and hole concentration and electrical resistivity of thermoelectric film were also characterized.

  • PDF

6~7C 부여 관북리 유적의 동 생산기법 연구 (A Study of Copper Production Techniques at the Archaeological Site in Gwanbukri, Buyeo in the 6th and 7th Centuries)

  • 이가영;조남철
    • 보존과학회지
    • /
    • 제36권3호
    • /
    • pp.162-177
    • /
    • 2020
  • 부여 관북리 유적에서 시행된 동 생산 및 제련과정을 살펴보기 위하여 '나'지구, '라'지구 출토동 생산 부산물(동 슬래그 및 동 도가니) 11점의 과학적 분석을 시행하였다. 분석방법은 파장분산형 X-선 형광 분석, X-선 회절 분석, 금속 현미경 관찰, 주사 전자현미경-에너지 분산형 X-선 분석기, 전계방출 전자탐침미량분석기, 라만 마이크로분광분석법을 사용하였다. 분석결과 관북리 동 슬래그에서는 주로 도가니 슬래그 및 정련 슬래그에서 전형적인 특징으로 나타나는 규산염 광물, Magnetite, Fayalite, Delafossite 등이 검출되었다. 또한 관북리 동 슬래그는 외형 및 미세조직의 양상의 특성에 따라 1. 유리질 바탕 기지 + Cu prill, 2. 유리질 바탕 기지 + Cu prill + Magnetite, 3. 규산염 광물 바탕 기지 + Cu prill, 4. 결정질(Delafossite, Magnetite)/유리질(비정질) 바탕 기지 + Cu prill, 5. Magnetite + Fayalite, 6. 청동합금 슬래그로 분류되었다. 미세조직 내에는 SiO2, Al2O3, CaO, SO4 P2O5, Ag2O, Sb2O3 등의 불순물이 잔재되어 있으며, 일부는 주석과 납이 합금되어 있는 것을 확인하였다. 이와 같은 결과를 통해 부여 관북리 유적에서는 동 생산과정 중 배소와 제련을 거친 동 중간생성물의 정련과 불순물이 함유된 동-주석, 또는 동-주석-납의 합금정련을 시행하였다고 판단된다.