• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 춘계학술발표회 초록집
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• pp.5-5
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• 1999

A novel process is proposed to improve oxidation resistance of Ti-Al intermetallic compounds at elevated temperatures by both Cr addition and pre-sulfidation, where TiAl alloys withlor without Cr addition were sulfidized at 1173K for 86.4ks at a 1.3 Pa sulfur partial pressure in a $H_2-H_2S$ gas mixture. The pre-sulfidation treatment formed a thin Cr-Al alloy layer as well as 7~10 micrometer $TiAl_3$ and $TiAl_2$ layer, due to selective sulfidation of Ti. Oxidation resistance of the pre-sulfidation processed TiAl 4Cr alloy was examined under isothermal and heat cycle conditions between room temperature and 1173K in air. Changes in $TiAl_3$ into $TiAl_2$ and then TiAl phases as well as their effect on oxidation behavior were investigated and compared with the oxidation behavior of the TiAl-4Cr alloy as TiAl and pre-sulfidation processed TiAl aHoys. After oxidation for up to 2.7Ms a protective $Al_2O_3$ scale was formed, and the pre-formed $TiAl_3$ changed into $TiAl_2$ and the $Al_2Cr$ phase changed into a CrAlTi phase between the $Al_2O_3$ scale and $TiAl_2$ layer. The pre-sulfidation processed TiAl-4Cr alloy had very good oxidation resistance for longer times, up to 2.7 Ms, in contrast to those observed for the pre-sulfidation processed TiAl alloy where localized oxidation occurred after 81 Oks and both the TiAl and TiAl-4Cr alloys themselves corroded rapidly from the initial stage of oxidation

• 한국진공학회지
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• 제19권3호
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• pp.211-216
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• 2010

$In_{0.5}Al_{0.5}As$ 버퍼층(buffer layer)의 성장온도 변화에 따른 $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ 다중양자우물(multiple quantum wells: MQWs)의 광학적 특성을 photoluminescence (PL)와 time-resolved PL (TRPL) 측정을 이용하여 분석하였다. $In_{0.5}Al_{0.5}As$ 버퍼층은 $320^{\circ}C$에서 $580^{\circ}C$까지 다양한 온도조건에서 $1{\mu}m$ 성장하였으며, 그 위에 6 nm, 4 nm, 그리고 2.5 nm 두께의 $In_{0.5}Ga_{0.5}As$ 양자우물(quantum well)과 10 nm 두께의 $In_{0.5}Ga_{0.5}As$ 장벽(barrier)의 MQWs을 성장하였다. 낮은 온도($320-480^{\circ}C$)에서 성장한 InAlAs 버퍼층의 MQWs는 4 nm QW과 6 nm QW로부터 모두 PL 피크가 측정되었으나, 높은 온도($320-580^{\circ}C$)의 버퍼층 위에 성장한 MQWs는 6 nm QW에서의 PL 피크만 관찰되었다. 일정한 온도 $480^{\circ}C$에서 성장한 버퍼층의 MQWs의 PL 세기가 가장 강하게 측정되었으며, 가장 높은 온도에서($530-580^{\circ}C$)에서 성장한 버퍼층의 MQWs의 PL 세기가 가장 약하게 나타났다. 이러한 PL 결과로부터 $In_{0.5}Al_{0.5}As$ 버퍼층의 최적의 성장조건은 일정한 온도 $480^{\circ}C$임을 확인하였다. 방출파장에 따른 PL 소멸시간(decay time)과 PL 스펙트럼으로부터 4 nm QW과 6 nm QW에서의 운반자 수명시간을 얻었다.

• 대한기계학회논문집A
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• 제26권11호
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• pp.2374-2382
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• 2002

Aluminum alloy/aramid fiber reinforced plastic(Al/AFRP) laminates consists of high strength metal(A15052) and laminated aramid fiber with structural adhesive bond. The mixture ratio effect of epoxy resin curing agent accelerator on the tensile strength and T-peel strength characteristic in Al AFRP laminates were investigated in this study. The epoxy. diglycidylether of bisphenol A(DCEBA), It'as cured by methylene dianiline(MDA) with or without an accelerator(K-54). Eight different kinds of resin mixture ratios were selected for the test , five kinds of Al/AFRP laminates were named as Al/AFRP(1) and three others of Al/AFRP laminates were named as Al/AFRP(2). The comparison of tensile strength and T-peel strength with variation of resin mixture ratio were studied. Respectively. Al/AFRP(1) and Al/AFRP(2) indicated approximately 6.0 times and 7.0 times more improved maximum tensile strength in comparison with those of monolithic A15052. Al/AFRP(2) indicated approximately 1.5 times more impoved maximum T-peel strengths in comparison with those of Al/AFRP(1). As results. Al/AFRP(2) turned out to have more effective characteristics on the tensile strength and T-peel strength than those of Al/AFRP(1).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.221-225
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• 1994

We described the impact ionization rates of electron in GaAs/AlGaAs MQH(multi- quantum well) using EMC(ensenble Monte Carlo) simulation. Hot electron energy of injected into quantum well is increasing nearly liearly due to the applied electric field to the barrier of MQM inspite of various Al mole fraction in AlGaAs or barrier width. Impact ionization rates are decreasing exponentially by increasing Al mole fraction, and they have peak vague due to the barrier width.

• Journal of the Optical Society of Korea
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• 제15권2호
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• pp.124-127
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• 2011

Quantum dots were designed within a GRIN-SCH(Graded index - Separate confinement Heterostructure) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 nm light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0x1011 dots/cm2, two quantum dot layers were found to be good enough for low threshold, high-power laser applications.

• 한국토양비료학회지
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• 제37권5호
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• pp.329-335
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• 2004

Acid deposition in forest adjacent to the industrial complexes causes soil acidification resulting in the leaching of cations, decreases of buffering capacity and increases of toxic metal concentrations such as Al, Fe, Mn and Cu in soil solution. Changes of nutrient availability equilibria by acid deposition have been known to retard the growth of pine trees. Objective of this research was to assess the critical ratios of Ca/Al and Mg/Al limiting the growth of Pinus thunbergii in the hydroponic culture. The Ca concentration and Ca/Al ratio in stalks of pine tree were increased as increasing Ca/Al molar ratio in the nutrient solution, but were not changed when the Ca/Al molar ratio was adjusted to greater than 1. Growth of Pinus thunbergii was inhibited at the Ca/Al molar ratio lower than l due to the Ca deficiency. The molar ratios of Ca/Al in the needles of Pinus thunbergii showed the similar tendency with the stalks. This indicated that Ca/Al molar ratio of 1 in the growth media was the critical level limiting the growth of Pinus thunbergii. Concentration of Mg and Mg/Al molar ratios in the stalks of pine tree were increased as increasing Mg/Al molar ratio in nutrient solution. Molar ratios of Mg/Al in the needles were increased as increasing Mg/Al ratios in nutrient solution up to 0.83, which was the critical level limiting the growth of Pinus thunbergii.

• 한국표면공학회지
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• 제39권1호
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• pp.25-34
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• 2006

Al-Mg alloy, an open rack vaporizer(ORV) material was reported to be corroded in seawater environments though the ORV material was coupled to thermally sprayed Al-Zn alloy functioning a sacrificial anode. In addition, the corrosion behavior based on the calculated corrosion potential did not match the observed corrosion behavior. Hence, the goal of this study is to get better understanding on Al or Al-Mg alloy coupled to Al-Zn alloy and to provide the calculated corrosion potential representing the corrosion behavior of the ORV material by immersion test, electrochemical tests, and calculation of corrosion and galvanic potential. The corrosion potentials of Al and Al alloys also depended on alloying element as well as surface defects. The corrosion potentials of Al and Al-Mg alloy were changed with time. In the meantime, the corrosion potentials of Al-Zn alloys were not. The corrosion rates of Al-Zn alloys were exponentially increased with zinc contents. The phenomena were explained with the stability of passive film proved by passive current density depending on pH and confirmed by the model proposed by McCafferty. Dissimilar material crevice corrosion (DMCC) test shows that higher content of zinc caused Al-Mg alloy corroded more rapidly, which was due to the fact that higher corrosion rate of Al-Zn makes [$H^+$] and [$Cl^-$] more concentrated within pit solution to corrode Al-Mg alloy. Considering electrochemical reactions within pit as well as bulk in the calculation gives better prediction on the corrosion behavior of Al and Al-Mg alloy as well as the capability of Al-Zn alloy for corrosion protection.

• 한국주조공학회지
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• 제20권2호
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• pp.89-96
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• 2000

The effects of modification processing on the refinement of primary Si and the wear behavior of hyper-eutectic Al-Si alloys have been mainly investigated. Refining effects of primary Si in Al-17%Si alloy was more efficient than that of B.390 alloy. Optimum condition of getting the finest primary Si microstructure was when AlCuP modifier is added into the melt at $750^{\circ}C$ and held it at $700^{\circ}C$ for 30 minutes. Wear loss in the specimens of as-cast condition decreases as the size of primary Si decreases, in the order of B.390 alloy, B.390 alloy with AlCuP addition, Al-17%Si alloy and Al-17%Si alloy with AlCuP addition. Wear loss in the aged condition of Al-17%Si alloy, B.390 alloy and B.390 alloy with AlCuP addition decreased due to the increase of compressive residual stress in the matrix by the aging treatment. While, wear loss increased in the aged specimens of Al-17%Si alloy with AlCuP addition and Hepworth addition in which compressive residual stress decreases by the aging treatment. Therefore, it is assumed that higher compressive residual stress in the matrix can reduce the wear loss in composite materials such as hyper-eutectic Al-Si alloys.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.87.2-87.2
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• 2012

고출력 반도체 레이저 다이오드는 발진 파장 및 광 출력에 따라 다양한 분야에 응용되고 있으며, 특히 발진파장이 808 nm 및 1470 nm 인 고출력 레이저 다이오드의 경우 재료가공, 펌핑용 광원 (DPSSL, 광섬유 레이저), 의료, 피부미용 (점 제거), 레이저 다이오드 디스플레이 등 가장 다양한 응용분야를 가진 광원 중의 하나라고 할 수 있다. 일례로 재료가공의 경우, 레이저 용접, 레이저 인쇄, 하드디스크의 레이저 텍스쳐링 등 그 응용분야는 무수히 많으며, 최근에는 미래 성장동력 사업의 하나로 중요한 이슈가 되는 태양전지에서 에지 분리 (edge isolation), ID 마킹, 레이저 솔더링 등에서 필수불가결한 광원으로 각광받고 있다. 808 nm 대역 In(Ga)AlAs quantum dots laser diode (QDLD) 성장을 위하여 In(Ga)AlAs QD active 와 In(Ga)AlAs QD LD 성장으로 크게 분류하여 여러 가지 test 실험을 수행하였다. 우선 In(Ga)AlAs QD LD 성장에 앞서 high power LD에 적용 가능한 GaAs/AlGaAs quantum well의 성장 및 전기 측정을 수행하여 그 가능성을 보았다. In(Ga)AlAs QD active layer의 효과적인 실험 조건 조절을 위해 QD layer는 sequential mithod (ex. n x (InGaAlAs t sec + InAs t sec + As 10 sec)를 사용하였다. In(Ga)AlAs QD active layer는 성장 온도, 각 sequence 별 시간, 각 source 양, barrier 두께 조절 및 타입변형, Arsenic flux 등의 조건을 조절하여 실험하였다. 또한 위에서 선택된 몇 가지 active layer 를 이용하여 In(Ga)AlAs QD LD 성장 조건 변화를 시도하였다.

• Applied Science and Convergence Technology
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• 제23권6호
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• pp.387-391
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• 2014

Self-assembled InAlAs/AlGaAs quantum dots (QDs) on GaAs substrates were grown by using modified molecular epitaxy beam in Stranski-Krastanov method. In order to study the structural and optical properties of InAlAs/AlGaAs QDs, atomic force microscopy (AFM) and photoluminescence (PL) measurements are conducted. The size and uniformity of QDs have been observed from the AFM images. The average widths and heights of QDs are increased as the deposition time increases. The PL spectra of QDs are composed of two peaks. The PL spectra of QDs were analyzed by the excitation laser power- and temperature-dependent PL, in which two PL peaks are attributed to two predominant sizes of QDs.