• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1289-1290
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• 2007

The composites were fabricated 61Vo.% ${\beta}$-SiC and 39Vol.% $TiB_2$ powders with the liquid forming additives of 12wt% $Al_{2}O_{3}+Y_{2}O_{3}$ as a sintering aid by pressure or pressureless annealing at $1650^{\circ}C$ for 4 hours. The present study investigated the influence of annealed sintering on the microstructure and mechanical of SiC-$TiB_2$ electroconductmive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ YAG($Al_{5}Y_{3}O_{12}$). The relative density, the flexural strength, the Young's modulus showed the highest value of 86.69[%], 136.43[MPa], 52.82[GPa] for pressure annealed SiC-$TiB_2$ ceramic composites.

• 반도체디스플레이기술학회지
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• 제19권1호
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• pp.93-96
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• 2020

Polyimide thin film was prepared by annealing the polyamic acid that was synthesized through co-deposition of diamine and dianhydride. The polyamic acid and polyimide thin film were characterized with FT-IR and HR FE-SEM. The average roughness of the film surface, evaluated with AFM, were 0.385 nm and 0.299 nm after co-deposition, and annealing at 120 ℃ respectively. OLED was passivated with the polyimide layer of 200 nm thickness. While the inorganic passivation layer enhances the WVTR of OLED, the organic passivation layer gives flexibility to the OLED. The in-situ passivation of OLED with organic thin film layer provides the leading technique to develop flexible OLED Display.

• Applied Science and Convergence Technology
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• 제23권1호
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• pp.40-43
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• 2014

We investigated the growth characteristics and interfacial properties of $HfO_2$ films deposited on Ge substrate through atomic layer deposited (ALD) by using an in-situ medium energy ion scattering analysis. The growth kinetics of $HfO_2$ grown on a $GeO_2/Ge$ substrate through ALD is similar to that grown on an $SiO_2/Si$ substrate. However, the incubation period of $HfO_2$ deposition on Ge is shorter than that on Si. The $HfO_2$ grown on the GeO/Ge substrate shows a significant diffusion of Hf atoms into the substrate interface and GeO volatilization after annealing at $700^{\circ}C$. The presence of low-quality Ge oxide or suboxide may degrade the electrical performance of device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.162-162
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• 2007

• 한국세라믹학회지
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• 제47권4호
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• pp.329-332
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• 2010

In order to investigate the effect of tail state on the electrical and the optical properties in amorphous IGZO(a-IGZO), a-IGZO films were deposited at room temperature on fused silica substrats using pulsed laser deposition method. The laser pulse energy was used as the processing parameter. In-situ post annealing was carried out at $150^{\circ}C$ right after the film deposition. The $O_2$ partial pressure during the deposition and the post annealing was fixed to 10mTorr. The carrier mobility of the a-IGZO films had a range from 2 to $18\;cm^2/Vs$ at carrier concentrations greater than $10^{18}\;cm^{-3}$. As the laser energy density increased, the Hall mobility increased. And post annealing improved the Hall mobility, as well. The optical property was examined using the ultraviolet-visible spectroscopy. The a-IGZO films that have low Hall mobility exhibited stronger and broader absorption tails in >3.0 eV region. Post annealing reduced the intensity of the tail-like absorption. The absorption tail in a-IGZO films is an important factor which affects the electrical and the optical properties.

• 한국세라믹학회지
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• 제34권8호
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3박막을 RF 마그네트론 스퍼터링법을 이용하여 Pt/Ti/SiO2/Si(100) 기판에 증착하였다 .누설전류에 영향을 주는 것으로 알려진 열처리 조건, dopant 효과 등을 평가하고자 이온반경이Ti와 유사하고 대부분이 Ti 자리를 치환하는 것으로 알려진 Nb와 Al을 각각 danor와 acceptor로 선택하여 BST 박막에 첨가한 후 누설전류를 측정하였다. 고온에서 in-situ 증착된 BST 박막은 거친 표면 형상을 보이며 낮은 전압에서 파괴가 발생하고, Nb 첨가로 누설전류가 증가하였다. 삼온 증착후 후열처리된 박막은 표면 형상도 평할도가 증가하였으며 in-situ로 제조된 박막에 비해 높은 파괴전압과 낮은 누설전류를 나타내었다. 특히 Al이 첨가된 BST 박막의 누설전류밀도는 ~10A/cm2로 도핑을 하지 않은 박막이나 Nb가 첨가된 박막에 비해 매우 낮은 누설전류밀도를 나타내었으며, 이는 산화로 인한 산소공공의 감소, 이동 가능한 hole의 감소와 후열처리과정중 계면 및 입계의 산화로 Schottky 장벽에 높아진 결과로 판단된다.

• 한국진공학회지
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• 제8권1호
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• pp.20-25
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• 1999

여러 가지 방법의 plasma 표면 처리와 산화 공정이 $SiO_2-Si$(100) 계면에 미치는 물리적 영향을 angle resolved uv-photoelectron spectroscopy(ARUPS)를 이용하여 연구하였다. 표면은 ex situ 방법과 함께 in situ 수소 플라즈마를 이용하여 처리되어 졌으며, 이것은 고진공 고온 열 처리 방법과 비교되어졌다. ARUPS 빛띠 상에 나타난 산화물 가전자 띠에 대한 특징적인 peak 위치는 표면 처리 및 산화 공정 방법에 따라 이동하였다. 이러한 peak의 이동은 Si에서의 띠휨에 의한 것으로 분석되어졌다. 또한 peak 이동의 원인으로 Si-SiO2 계면에 형성된 결점과 표면 처리 공정에 따라 달라지는 표면 거칠기 등을 고려할 수 있었다. 여러 공정에 대한 ARUPS 결과를 비교함으로써 $Si--SiO_2$(계면 결합이 표면 처리 및 산화 방법에 깊이 관련되어 있음을 결론지을 수 있었다. 산소 plasma 공정은 가장 작은 band bending을 보여주었다.

• 한국초전도ㆍ저온공학회논문지
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• 제14권4호
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• pp.12-15
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• 2012

$MgB_2$ superconductor is highly sensitive to the Mg content. Even if the samples are synthesized with the appropriate looking stoichiometric ratio, the heat treatment leads to the loss of Mg either to ambiance or to MgO. To avoid it, either excess Mg is added in the starting powder or sealed ampoule annealing is employed. In this paper the effect of open Mg sintering ambiance on the ex-situ $MgB_2$ was studied to enhance its superconducting properties. The open Mg ambiance was created to avoid any overpressure of Mg by providing a hole in Fe tube used as sample holder. The decrease in resistivity of the synthesized sample was observed through the increased temperature dependence of electron-phonon interactions. A clear enhancement in the superconducting cross-sectional area and hence the in-field critical current density is obtained.

• 열처리공학회지
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• 제4권2호
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• pp.9-18
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• 1991

Among the many maunfactured processes of producing multi filamentary composites, in situ process is widely used owing tv its simplicity and easyness of mass production. In this study, the mechanical and electromagnetic properties of Cu-Fe composite materials was investigated. The tensile strength of the Cu-Fe wires increased as the Fe content and reduction ratio were increased. The Cu-30 wt%Fe composites had the best properties in terms of figure merits compared to the other Cu-Fe composites made in this study or the commercially manufactured 6/1 ACSR cables of Cu cable. The coercivity was decreased by increasing Fe content, but the squareness was increased greatly. As increasing reduction ratio, the coercivity and squareness increased up to the maximum points, and then decreased. For example, the maximum values were obtained at $0.09mm{\phi}$ for Cu-30 wt%Fe composites and at $0.066mm{\phi}$ for Cu-45 wt%Fe composites. The magnetic property of Cu-Fe wires produced by precipitation treatment was higher than that of Cu-Fe wires produced by thermomechanical treatment. By annealing Cu-Fe wires after drawing process, the coercivity, remanence and squareness were improved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.783-786
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• 2003

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from $V_2O_5$ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Crystal structure and optical properties of films sputter-deposited under different oxygen gas pressures and in situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through XRD and optical absorption measurements. The films as-deposited are amorphous, but $0%O_2$ films annealed for time longer than 4h and $8%O_2$ films annealed for time longer than 1h are polycrystalline. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly at wavelength shorter than about 550nm. Indirect and direct optical band gaps were decreased with increasing the annealing time.