• Journal of Korean Society on Water Environment
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• v.26 no.4
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• pp.707-712
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• 2010

Nitrogen-doped $TiO_2$ particles have been successfully prepared using titanium tetraisopropoxide as the Ti source and urea as the nitrogen source. As-prepared nitrogen-doped $TiO_2$ was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Brunauer-Emmett-Teller method (BET) and ultraviolet-visible light (UV-vis) absorption spectra techniques. Photocatalytic degradation of Methylene Blue (MB) has been carried out in both solar light (UV-vis) and the visible region (${\lambda}=420nm$). Nitrogen-doped $TiO_2$ exhibits higher activity than the commercial $TiO_2$ photocalyst, particularly under visible-light irradiation because bandgap of nitrogen-doped $TiO_2$ becomes remarkably decreased.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.540-540
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• 2013

In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped ethylcyclohexane plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Ethylcyclohexenewas used as organic precursor (carbon source) with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. The ellipsometry results showed the refractive index change of the N-doped ethylcyclohexene plasma polymer film. The FT-IR spectrashowed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.

• Corrosion Science and Technology
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• v.7 no.4
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• pp.233-236
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• 2008

Halide-activated pack cementation was utilized to deposit B-doped silicide coating. The pack powders were consisted of $3Wt.c/oNH_4Cl$, 7Wt.c/oSi, $90Wt.c/oAl_2O_3+TiB_2$. B-doped silicide coating was consisted of two layers, an outer layer of $NbSi_2$ and an inner layer of $Nb_5Si_3$. Isothermal oxidation resistance of B-doped silicide coating was tested at $1250^{\circ}C$ in static air. B-doped silicide coating had excellent oxidation resistance, because continuous $SiO_2$ scale which serves as obstacle of oxygen diffusion was formed after oxidation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.6
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• pp.335-340
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• 2000

We report the results of a preliminary investigation on capacitive humidity sensors using iodine-doped polyphenylacetylene(PPA) thin films. PPA was prepared from phenylacetylene(PA), chemically doped with iodine, and characterized by DSC, $^1H$-NMR and FTIR spectra. The iodine-doped PPA sensors showed a sensitivity of 0.20pF/%RH, a linearity of 3.8%FS, a negligible hysteresis, and a low temperature coefficients of $0.043~0.067pF/^{\circ}C$ over a wide range of relative humidity. These results are expected to open up the possibility of iodine-doped PPA thin films as relative humidity sensors.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.149-154
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• 1996

ZnO and Al-doped ZnO thin films were prepared by sol-gel dip-coating method and electrical and optical properties of films were investigated. Using the zinc acetate dihydrate and acetylaceton(AcAc) as a chelating agent stable ZnO sol was synthesized with HCl catalyst. Adding aluminium chloride to the ZnO sol Al-doped ZnO sol could be also synthesized. As Al contents increase the crystallinity of ZnO thin film was retarded by increased compressive stress in the film resulted from the difference of ionic radius between Zn2+ and Al3+ The thickness of ZnO and Al-doped ZnO thin film was in the range of 2100~2350$\AA$. The resistivity of ZnO thin films was measured by Van der Pauw method. ZnO and Al-doped ZnO thin films with annealing temperature and Al content had the resistivity of 0.78~1.65$\Omega$cm and ZnO and Al-doped ZnO thin film post-annealed at 40$0^{\circ}C$ in vacuum(5$\times$10-5 torr) showed the resistivity of 2.28$\times$10-2$\Omega$cm. And the trans-mittance of ZnO and Al-doped ZnO thin film is in the range of 91-97% in visible range.

• Journal of the Korean institute of surface engineering
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• v.34 no.2
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• pp.89-96
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• 2001

N- or O-doped STS304 stainless films were synthesized by an unbalanced magnetron sputtering process with various argon and reactive gas ($N_2$, $O_2$) mixtures. These films were examined by scanning electron microscopy (SEM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and Knoop microhardness tester. The Results from X-ray diffraction (XRD) analysis showed that a STS304 stainless steel film synthesized without reactive gas using a bulk STS304 stainless steel target had a ferrite bcc structure ($\alpha$ phase), while the N-doped STS304 stainless film was consisted of a nitrogen supersaturated fcc structure, which hsa a strong ${\gamma}$(200) phase. In the O-doped films, oxide Phases ($Fe_2$$O_3$ and $Cr_2$$O_3$) were observed from the films synthesized under an excess $O_2$ flow rate of 9sccm. AES analysis showed that nitrogen content in N-doped films increased as the nitrogen flow rate increased. Approximately 43 at.%N in the N-doped film was measured using a nitrogen flow rate of 8sccm. In O-doped film, approximately 15 at.%O was detected using a $O_2$ flow rate of 12sccm. the Knoop microhardness value of N-doped film using a nitrogen flow rate of 8 sccm was measured to be approximately $H_{ k}$ 1200 and this high value could be attributed to the fine grain size and increased residual stress in the N-doped film.

• Journal of the Optical Society of Korea
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• v.14 no.4
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• pp.298-304
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• 2010

The pair-induced quenching (PIQ) effect in a highly doped bismuth oxide-based erbium-doped fiber amplifier (EDFA) was theoretically and experimentally investigated. In the theoretical investigation, the bismuth oxide-based EDFA was modeled as a 6-level amplifier system that incorporated clustering-induced concentration quenching, cooperative up-conversion, pump excited state absorption (ESA), and signal ESA. The relative number of paired ions in a highly doped bismuth oxide EDF was estimated to be ~6.02%, determined by a comparison between the theoretical and the experimentally measured gain values. The impacts of the PIQ on the gain and the noise figure were also investigated.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.311-324
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• 2018

Herein,the Neodymium ion ($Nd^{3+}$) doped CoAl-LDH have been successfully prepared via co-precipitation method and was used as a precursor of Nd-doped CoAl-mixed metal oxides (MMO). The photocatalytic activity of doped LDH and MMO was investigated in the degradation of an azo dye, C.I. Acid Red 14, under visible light irradiation. DRS and PL analysis demonstrated decreasing in the band gap energy and recombination of photo-induced charge carriers of Nd-doped LDH and MMO compared with the pristine CoAL-LDH. Due to significant difference in photocatalytic performance. A power law empirical kinetic model was obtained for predicting the photocatalytic degradation efficiency.

• Bulletin of the Korean Chemical Society
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• v.32 no.7
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• pp.2227-2232
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• 2011

The new metrology, Advanced Poly-silicon Ultra-Trace Profiling (APUTP), was developed for measuring bulk Cu and Ni in heavily boron-doped silicon wafers. A Ni recovery yield of 98.8% and a Cu recovery yield of 96.0% were achieved by optimizing the vapor phase etching and the wafer surface scanning conditions, following capture of Cu and Ni by the poly-silicon layer. A lower limit of detection (LOD) than previous techniques could be achieved using the mixture vapor etching method. This method can be used to indicate the amount of Cu and Ni resulting from bulk contamination in heavily boron-doped silicon wafers during wafer manufacturing. It was found that a higher degree of bulk Ni contamination arose during alkaline etching of heavily boron-doped silicon wafers compared with lightly boron-doped silicon wafers. In addition, it was proven that bulk Cu contamination was easily introduced in the heavily boron-doped silicon wafer by polishing the wafer with a slurry containing Cu in the presence of amine additives.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.137-137
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• 2003

Optical amplificator have been used to compensate the losses in the optical signal transmission and processing. Today, there has been increasing demand for the very low cost optical amplifier. Sol-gel offers considerable potential both low cost manufacture, and for great flexibility in materials composition and structure. In addition, the sol-gel process is a very attractive method for producing porous materials with controlled structure. In this work, we present the potoluminescence properties of Er doped A1$_2$O$_3$/SiO$_2$ films. Erbium doped alumina nano sol was prepared by Al(NO$_3$)$_3$.9$H_2O$ and Er(NO$_3$)$_3$.5$H_2O$ through hydrolysis and peptization, and then GPS (3-Glycidoxypropyltrimethoxysilane) was added into Er doped alumina nano sol for organic- inorganic hybridization. Er doped A1$_2$O$_3$/SiO$_2$ film was obtained by spin coating, dip coating and thermal treatment from 30$0^{\circ}C$~120$0^{\circ}C$, and there were crack-free after thermal treatment. The thickness of film was measured SEM, and the porosity of film was characterized by BET and TGA. The crystal phase of Er doped A1$_2$O$_3$/SiO$_2$ were determined by XRD. Finally, the photoluminescence properties of Er doped A1$_2$O$_3$/SiO$_2$ films will be discuss with the consideration of porosity and crystallity.