• 제목/요약/키워드: In-doped

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A Study on the Preparation of CdS Doped $SiO_2$ Glass Coating Films by Sol-Gel Method (졸-겔법에 의한 CdS 분산 $SiO_2$ Glass 코팅막의 제조에 관한 연구)

  • 박한수;김경문;문종수
    • Journal of the Korean Ceramic Society
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    • v.30 no.11
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    • pp.897-904
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    • 1993
  • CdS doped SiO2 glass coating films which are good candidates for the nonlinear optical materials were prepared by the Sol-Gel method. TEOS, C2H5OH, H2O and HCl were used as starting materials to obtain SiO2 matrix solutions. Then Cd(NO3)2.2H2O and CS(NH2)2 were dissolved into the SiO2 matrix solutions. Coating was performed several times in order to increase the thickness of coated film by the dip-coating method. Then heat treatments were carried out to control the size of CdS microcrystals doped in SiO2 glass matrix with respect to temperatures and times. CdS-doped SiO2 transparent coating films were successfully obtained. CdS crystals were changed from cubic to hexagonal type about $600^{\circ}C$.

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Effects of phosphorus content and operating temperature on the electrochemical performance of phosphorus-doped soft carbons

  • Kim, Eun Hee;Jung, Yongju
    • Carbon letters
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    • v.15 no.4
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    • pp.277-281
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    • 2014
  • A series of high capacity soft carbons with different phosphorus contents were successfully prepared by carbonizing petroleum cokes treated with hypophosphorous acid at $900^{\circ}C$. The effect of phosphorus content on the electrochemical performance of the soft carbons was extensively investigated. The P-doped soft carbons exhibited greatly enhanced discharge capacities and outstanding rate capabilities with increasing phosphorus content. In addition, the influence of temperature on the electrochemical behaviors of the soft carbons was investigated in a wide temperature range of $25^{\circ}C$ to $50^{\circ}C$. Surprisingly, the electrochemical properties of the pristine and P-doped soft carbons were highly sensitive to the operating temperature, unlike conventional graphite. The pristine and P-doped soft carbons exhibited significantly high discharge capacities of 470 and 522 mAh/g, respectively, at a high temperature of $50^{\circ}C$.

Reduction of Operating Voltage of GaN-based Blue-violet Laser Diode by using Highly Mg Doped GaN Layer (고농도의 Mg가 도핑된 GaN층을 이용한 GaN계 청자색 레이저다이오드의 동작 전압 감소)

  • 곽준섭
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.7
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    • pp.764-769
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    • 2004
  • In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.

Enhancing the Efficiency of Core/Shell Nanowire with Cu-Doped CdSe Quantum Dots Arrays as Electron Transport Layer (구리 이온 도핑된 카드뮴 셀레나이드 양자점 전자수송층을 갖는 나노와이어 광전변환소자의 효율 평가)

  • Lee, Jonghwan;Hwang, Sung Won
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.4
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    • pp.94-98
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    • 2020
  • The core/shell of nanowires (NWs) with Cu-doped CdSe quantum dots were fabricated as an electron transport layer (ETL) for perovskite solar cells, based on ZnO/TiO2 arrays. We presented CdSe with Cu2+ dopants that were synthesized by a colloidal process. An improvement of the recombination barrier, due to shell supplementation with Cu-doped CdSe quantum dots. The enhanced cell steady state was attributable to TiO2 with Cu-doped CdSe QD supplementation. The mechanism of the recombination and electron transport in the perovskite solar cells becoming the basis of ZnO/TiO2 arrays was investigated to represent the merit of core/shell as an electron transport layer in effective devices.

An evaluation on crystallization speed of N doped $Ge_2Sb_2Te_5$ thin films by nano-pulse illumination (나노-펄스 노출에 따른 질소 첨가한 $Ge_2Sb_2Te_5$ 박막의 결정화 속도 평가)

  • Song, Ki-Ho;Beak, Seung-Cheol;Park, Heung-Su;Lee, Hyun-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.134-134
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    • 2009
  • In this work, we report that crystallization speed as well as the electrical and optical properties about the N-doped $Ge_2Sb_2Te_5$ thin films. The 200-nm-thick N-doped $Ge_2Sb_2Te_5$ thin film was deposited on p-type (100) Si and glass substrate by RF reactive sputtering at room temperature. The amorphous-to-crystalline phase transformation of N-doped $Ge_2Sb_2Te_5$ thin films investigated by X-ray diffraction (XRD). Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheet resistance of N-doped $Ge_2Sb_2Te_5$ thin films annealed at different temperature. In addition, the surface morphology and roughness of the films were observed by Atomic Force Microscope (AFM). The crystalline speed of amorphous N-doped $Ge_2Sb_2Te_5$ films were measured by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration: 10~460 ns). It was found that the crystalline speed of thin films are decreased by adding N and the crystalline temperature is higher. This means that N-dopant in $Ge_2Sb_2Te_5$ thin film plays a role to suppress amorphous-to-crystalline phase transformation.

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Synthesis of Li-doped NiO and its application of thermoelectric gas sensor (Li 도핑된 NiO 합성 및 열전식 수소센서에의 적용)

  • Han, Chi-Hwan;Han, Sang-Do;Kim, Byung-Kwon
    • Journal of Hydrogen and New Energy
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    • v.16 no.2
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    • pp.136-141
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    • 2005
  • Li-doped NiO was synthesized by molten salt method. $LiNO_3$-LiOH flux was used as a source for Li doping. $NiCl_2$ was added to the molten Li flux and then processed to make the Li-doped NiO material. Li:Ni ratios were maintained from 5:1 to 30:1 during the synthetic procedure and the Li doping amount of synthesized materials were found between 0.086-0.190 as a Li ion to Ni ion ratio. Li doping did not change the basic cubic structural characteristics of NiO as evidenced by XRD studies, however the lattice parameter decreased from 0.41769nm in pure NiO to 0.41271nm as Li doping amount increased. Hydrogen gas sensors were fabricated using these materials as thick films on alumina substrates. The half surface of each sensor was coated with the Pt catalyst. The sensor when exposed to the hydrogen gas blended in air, heated up the catalytic surface leaving rest half surface (without catalyst) cold. The thermoelectric voltage thus built up along the hot and cold surface of the Li-doped NiO made the basis for detecting hydrogen gas. The linearity of the voltage signal vs $H_2$ concentration was checked up to 4% of $H_2$ in air (as higher concentrations above 4.65% are explosive in air) using Li doped NiO of Li ion/Ni ion=0.111 as the sensor material. The response time T90 and the recovery time RT90 were less than 25 sec. There was minimum interference of other gases and hence $H_2$ gas can easily be detected.

Synthesis of Fe-Doped TiO2/α-Fe2O3 Core-Shell Nanowires Using Co-Electrospinning and Their Magnetic Property (복합 전기방사법을 이용한 Fe-doped TiO2/α-Fe2O3 이중구조 나노와이어의 합성 및 자성 특성)

  • Koo, Bon-Ryul;Ahn, Hyo-Jin
    • Korean Journal of Materials Research
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    • v.24 no.8
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    • pp.423-428
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    • 2014
  • We synthesized Fe-doped $TiO_2/{\alpha}-Fe_2O_3$ core-shell nanowires(NWs) by means of a co-electrospinning method and demonstrated their magnetic properties. To investigate the structural, morphological, chemical, and magnetic properties of the samples, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy were used, as was a vibrating sample magnetometer. The morphology of the nanostructures obtained after calcination at $500^{\circ}C$ exhibited core/shell NWs consisting of $TiO_2$ in the core region and ${\alpha}-Fe_2O_3$ in the shell region. In addition, the XPS results confirmed the formation of Fe-doped $TiO_2$ by the doping effect of $Fe^{3+}$ ions into the $TiO_2$ lattice, which can affect the ferromagnetic properties in the core region. For comparison, pure ${\alpha}-Fe_2O_3$ NWs were also fabricated using an electrospinning method. With regard to the magnetic properties, the Fe-doped $TiO_2/{\alpha}-Fe_2O_3$ core-shell NWs exhibited improved saturation magnetization(Ms) of approximately ~2.96 emu/g, which is approximately 6.1 times larger than that of pure ${\alpha}-Fe_2O_3$ NWs. The performance enhancement can be explained by three main mechanisms: the doping effect of Fe ions into the $TiO_2$ lattice, the size effect of the $Fe_2O3_$ nanoparticles, and the structural effect of the core-shell nanostructures.

Surface Characteristics and Photocatalytic Propertiy of B Doped TiO2 Layer Synthesized by Plasma Electrolytic Oxidation Process (Plasma Electrolytic Oxidation 방식으로 제조된 B Doped TiO2의 표면특성과 광촉매 특성)

  • Lee, Jong-Ho;Lee, Young-Ki;Kim, Young-Jig;Oh, Han-Jun
    • Korean Journal of Materials Research
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    • v.31 no.10
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    • pp.552-561
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    • 2021
  • For the purpose of manufacturing a high efficiency TiO2 photocatalyst, B-doped TiO2 photocatalysts are synthesized using a plasma electrolytic oxidation method in 0.5 M H2SO4 electrolyte with different concentrations of H3BO3 as additive. For the B doped TiO2 layer fabricated from sulfuric electrolyte having a higher concentration of H3BO3 additive, the main XRD peaks of (101) and (200) anatase phase shift gradually toward the lower angle direction, indicating volume expansion of the TiO2 anatase lattice by incorporation of boron, when compared with TiO2 layers formed in sulfuric acid with lower concentration of additive. Moreover, XPS results indicate that the center of the binding energy peak of B1s increases from 191.45 eV to 191.98 eV, which suggests that most of boron atoms are doped interstitially in the TiO2 layer rather than substitutionally. The B doped TiO2 catalyst fabricated in sulfuric electrolyte with 1.0 M H3BO3 exhibits enhanced photocurrent response, and high efficiency and rate constant for dye degradation, which is ascribed to the synergistic effect of the new impurity energy band induced by introducing boron to the interstitial site and the improvement of charge transfer reaction.

증착 온도를 변화시켜 DC magnetron sputter로 증착한 Ga-doped ZnO 박막의 특성

  • Park, Ji-Hyeon;Sin, Beom-Gi;Lee, Min-Jeong;Lee, Tae-Il;Myeong, Jae-Min
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.41.2-41.2
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    • 2011
  • Display 산업의 확대로 인해 광학적 특성 및 전기적 특성이 우수한 TCO (Transparent conductive oxide) 연구가 활발히 진행되고 있다. 기존에는 ITO가 대부분의 분야에서 이용되었지만 In의 경제적인 단점으로 인해 새로운 대체물로써 ZnO가 떠오르고 있다. ZnO는 전형적인 n-type 반도체이며, wide band gap 물질로써 Al, Ga, B과 같은 3 족 원소를 doping 함으로써 광학적 및 전기적 특성을 향상시킬 수 있다. 최근에는 ZnO의 이온반경과 비슷한 Ga을 도핑한 Ga-doped ZnO 박막에 대한 연구가 활발히 진행되고 있다. 이는 ZnO에 Ga을 도핑함으로써 격자결함을 최소화 시키고 carrier concentration 및 hall mobility를 향상시켜 전기전도도의 향상을 이루기 때문이다. 본 연구에서는 $Ga_2O_3$이 3wt% doping 된 ZnO rotating cylindrical target 을 DC magnetron sputtering 을 이용하여 2 kW의 파워와 70 kHz의 주파수를 고정하고, 증착 온도를 변화시켜 유리 기판 위에 Ga-doped ZnO 박막을 증착 하였다. 증착 시 온도가 Ga-doped ZnO 박막에 미치는 영향을 관찰하기 위해 박막 표면의 조성을 분석하였고, 결정성 및 전기적 특성의 변화를 통해 박막의 특성을 비교 평가하였다. Ga-doped ZnO 박막의 표면과 두께는 SEM (Scanning electron microscope) 분석을 통해 관찰하였고, XRD (X-ray diffractometer) 를 이용하여 결정학적 특성을 확인하였다. 또한 Van der Pauw 방법을 이용한 hall 측정을 통해 resistivity, carrier concentration, hall mobility를 분석하였고, UV-Vis를 이용하여 박막의 투과율을 분석하였으며, 이를 토대로 투명 전도막으로써 Ga-doped ZnO 박막의 응용 가능성을 평가하였다.

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Synthesis, characterization and potential applications of Ag@ZnO nanocomposites with S@g-C3N4

  • Ahmad, Naveed;Javed, Mohsin;Qamar, Muhammad A.;Kiran, Umbreen;Shahid, Sammia;Akbar, Muhammad B.;Sher, Mudassar;Amjad, Adnan
    • Advances in materials Research
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    • v.11 no.3
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    • pp.225-235
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    • 2022
  • It includes the synthesis of pristine ZnO nanoparticles and a series of Ag-doped zinc oxide nanoparticles was carried out by reflux method by varying the amount of silver (1, 3, 5, 7 and 9% by mol.). The morphology of these nanoparticles was investigated by SEM, XRD and FT-IR techniques. These techniques show that synthesized particles are homogenous spherical nanoparticles having an average particle size of about 50-100 nm along with some agglomeration. The photocatalytic activity of the ZnO nanoparticles and Ag doped ZnO nanoparticles were investigated via photodegradation of methylene blue (MB) as a standard dye. The data from the photocatalytic activity of these nanoparticles show that 7% Ag-doped ZnO nanoparticles exhibit much enhanced photocatalytic activity as compared to pristine ZnO nanoparticles and other percentages of Ag-doped ZnO nanoparticles. Furthermore, 7% Ag-doped ZnO was made composites with sulfur-doped graphitic carbon nitride by physical mixing method and a series of nanocomposites were made (3.5, 7.5, 25, 50, 75% by weight). It was observed that the 25% composites exhibited better photocatalytic performance than pristine S-g-C 3 N 4 and pure 7% Ag-doped ZnO. Tauc's plot also supports the photodegradation results.