• 대한기계학회논문집B
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• 제24권10호
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• pp.1359-1367
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• 2000

In-situ particle monitors(ISPMs) are widely used for monitoring contaminant particles in vacuum-based semiconductor manufacturing equipment. In the present research, the performance of a Particle Measuring Systems(PMS) Vaculaz-2 ISPM at low pressures has been studied. We generated the uniform sized methylene blue particle beams using three identical aerodynamic lenses in the center of the vacuum line, and measured the detection efficiency of the ISPM. The effects of particle size, particle concentration, mass flow rate, system pressure, and arrangement of aerodynamic lenses on the detection efficiency of the ISPM were examined. Results show that the detection efficiency of the ISPM greatly depends on the mass flow rate, and the particle Stokes number. We also found that the optimum Stokes number ranges from 0.4 to 1.9 for the experimental conditions.

• 대한기계학회논문집B
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• 제22권11호
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• pp.1564-1570
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• 1998

In-situ particle monitors(ISPMs) are widely used for monitoring contaminant particles in vacuum-based semiconductor manufacturing equipment. In the present research, the performance of a Particle Measuring Systems(PMS) Vaculaz-2 ISPM at subatmospheric pressures has been studied. We created uniform upstream conditions of particle concentration and measured the detection efficiency, the lower detection limit, and the size response of the ISPM using uniform sized methylene blue aerosol particles. The effect of particle size, particle velocity, particle concentration, and system pressure on the detection efficiency was examined. Results show that the detection efficiency of the ISPM decreases with decreasing chamber pressure, and with increasing mass flow rate. The lower detection limit of the ISPM, determined at 50 % of the measured maximum detection efficiency, was found to be about $0.15{\sim}0.2{\mu}m$, which is similar to the minimum detectable size of $0.17{\mu}$ given by the manufacturer.

• 반도체디스플레이기술학회지
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• 제3권2호
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• pp.1-4
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• 2004

An experimental study was conducted on the optimal configuration and size of ADFL(Aerodynamic Focusing Lens) which used in modified ISPM(In-Situ Particle Monitoring). The particle counting efficiency has been known as a function of distance and size of ADFL, thus we varied these parameters to find out the optimum values. From a result of experiment, it was found that two lenses and 6mm space between them showed a maximum particle measuring efficiency. To apply this modified ISPM to semiconductor manufacturing field, we need more experiment about the pressure change, flow rate, and input particle size.

• 반도체디스플레이기술학회지
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• 제5권1호
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• pp.45-49
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• 2006

In this paper, a new method that monitors the quantity of particles using ion-counter in vacuum environment is introduced. In-situ particle monitoring (ISPM) system is composed by Gerdien type ion-counter (house-made), DC power supply and electrometer. The ion-counter applied by positive voltage detects only positive charged particles. Therefore the particles to be detected should be in known charge state for further data analysis. ion-counter is installed at the exhaust line of process equipment where the pressure loss is structurally low. ISPM system performance has been verified with SMPS (Scanning Mobility Particle Sizer) system. The correlation coefficient is above 0.98 at the particle size range of $20{\sim}300nm$ in diameter with identified charge distribution under $0.1{\sim}10.0$ Torr.

• 한국입자에어로졸학회지
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• 제11권4호
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• pp.93-98
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• 2015

Particles which generated from plasma enhanced chemical vapor deposition (PECVD) during thin film deposition process can affect to the process yield. By using light extinction method, ISPM can measure particles in the large-diameter pipe (${\leq}300mm$). In our research, in-situ particle monitor (ISPM) sensor was installed at the 300 mm diameter exhaust-line to count the particles in each size. In-house flange for mounting the transmitting and receiving parts of ISPM was carefully designed and installed at a certain point of exhaust line where no plasma light affect to the light extinction measurement. Measurement results of trend changes on particle count in each size can confirm that ISPM is suitable for real-time monitoring of vacuum process.

• 한국입자에어로졸학회지
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• 제6권3호
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• pp.139-145
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• 2010

In this study, we investigated the particle formation during the deposition of borophosphosilicate glass (BPSG) and phosphosilicate glass (PSG) films in thermal chemical vapor deposition reactor using in-situ particle monitor (ISPM) and particle beam mass spectrometer (PBMS) which installed in the reactor exhaust line. The particle current and number count are monitored at set-up, stabilize, deposition, purge and pumping process step in real-time. The particle number distribution at stabilize step was measured using PBMS and compared with SEM image data. The PBMS and SEM analysis data shows the 110 nm and 80 nm of mode diameter for BPSG and PSG process, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.338-338
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• 2010

공정 중 발생하는 입자는 반도체 생산 수율에 가장 큰 영향을 끼치는 원인으로 파악되며, 생산 수율을 저하시키는 원인 중 70% 가량이 이와 관련된 것으로 알려져 있다. 현재 반도체 공정에서 입자를 계측하는데 사용하는 PWP (Particle per Wafer Pass) 방법은 표준 측정방법으로 널리 쓰이고 있으나, 실시간으로 입자의 양을 측정할 수 없고, Test wafer 사용에 따른 비용증가의 단점이 있어 공정 중에 입자를 실시간으로 측정할 수 있는 대안기술이 필요한 실정이다. ISPM (In-Situ Particle Monitoring)은 레이저 산란방식을 이용한 실시간 입자측정 장비로서 오염원 발생에 대한 즉각적인 대처와 조치가 가능하고 부가적인 추가 비용이 발생하지 않기 때문에 실시간 모니터링 장비가 없는 현재의 반도체 공정에 충분히 적용될 가능성이 있다. 특히 CVD 공정은 반도체 공정의 약 30%를 차지할 만큼 중요한 단계로 생성되는 오염입자 모니터링을 통해 공정 불량 유무를 판단할 수 있을 것으로 기대된다. 본 연구에서는 Silane 가스를 이용한 PECVD (Plasma Enhanced Chemical Vapor Deposition) 공정 중 발생되는 오염입자를 ISPM을 이용하여 실시간으로 측정하였다. 챔버 배기구에 두 가지 타입의 ISPM을 설치하고 공정압력, 유량, 플라즈마 파워를 공정변수로 하여 각각의 조건에서 발생되는 오염입자의 분포 변화를 실시간으로 측정하였으며 결과를 비교 분석하였다.

• 한국진공학회지
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• 제20권2호
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• pp.86-92
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• 2011

본 연구에서는 새롭게 개발된 센서인 in-situ particle monitor (ISPM)와 기존센서의 기능을 업그레이드 한 센서인 self-plasma optical emission spectroscopy (SPOES)를 이용해 화학기상증착 진공공정을 진단하였다. 본 연구에서 사용된 증착공정 장비는 silane 가스를 이용한 silicon plasma enhanced chemical vapor deposition과 borophosphosilicate glass 증착장비이다. 두 장비의 증착 또는 클리닝 조건에서의 배출되는 오염입자와 배기가스를 개발된 센서를 이용해 공정상태를 실시간으로 진단하는 것과 개발된 센서의 센싱 능력을 검증하고자 하는 목적으로 연구가 진행되었다. 개발된 센서는 장비 배기구 설치되었으며, 공정압력, 유량, 플라즈마 파워 등의 공정변수 변화에 따른 오염입자 크기 및 분포와 배기 부산물의 변화를 측정하고, 측정 결과의 상호 연관성을 분석하였다.