• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.672-675
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• 1999

Si-to-Si electrostatic bonding was carried out by employing LSG interlayer instead of conventional Corning #7740 interlayer in order to improve bonding properties. The surface roughness and dielectric breakdown field of the LSG interlayers deposited on Si substrates were investigated. Also, the bonding interface, bonding strength and bonding mechanism were discussed for the electrostatically-bonded Si-Si wafer pairs having LSG interlayers.

• Structural Engineering and Mechanics
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• v.58 no.4
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• pp.613-625
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• 2016

Contact interaction of a beam (flexible element) with an elastic half-plane is considered, when a soft inhomogeneous (functionally graded) interlayer is present between them. The beam is bent under the action of a distributed load applied to the surface and a reaction of the elastic interlayer and the half-space. Solution of the contact problem is obtained for different values of thickness and parameters of inhomogeneity of the layer. The interlayer is assumed to be significantly softer than the underlying half-plane; case of 100 times difference in Young's moduli is considered as an example. The influence of the interlayer thickness and gradient of elastic properties on the distribution of the contact stresses under the beam is studied.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.41-47
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• 2015

In this paper, the effective electron Schottky barrier height (${\Phi}_{Bn}$) of the Ni silicide/n-silicon (100) interface was studied in accordance with different thicknesses of the antimony (Sb) interlayer for high performance n-channel MOSFETs. The Sb interlayers, varying its thickness from 2 nm to 10 nm, were deposited by radio frequency (RF) sputtering on lightly doped n-type Si (100), followed by the in situ deposition of Ni/TiN (15/10 nm). It is found that the sample with a thicker Sb interlayer shows stronger ohmic characteristics than the control sample without the Sb interlayer. These results show that the effective ${\Phi}_{Bn}$ is considerably lowered by the influence of the Sb interlayer. However, the current level difference between Schottky diodes fabricated with Sb/Ni/TiN (8/15/10 nm) and Sb/Ni/TiN (10/15/10 nm) structures is almost same. Therefore, considering the process time and cost, it can be said that the optimal thickness of the Sb interlayer is 8 nm. The effective ${\Phi}_{Bn}$ of 0.076 eV was achieved for the Schottky diode with Sb/Ni/TiN (8/15/10 nm) structure. Therefore, this technology is suitable for high performance n-channel MOSFETs.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.1-4
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• 2019

Reactive sputtering is widely used because of its high deposition rate and high step coverage. The deposition layer is often affected by target poisoning because the target conditions are changed, as well, by reactive gases during the initial stage of sputtering process. The reactive gas affects the deposition rate and process stability (target poisoning), and it also leads unintended oxide interlayer formation. Although the target poisoning mechanism has been well known, little attention has been paid on understanding the interlayer formation during the reactive sputtering. In this research, we studied the interlayer formation during the reactive sputtering. A DC magnetron sputtering process is carried out to deposit an aluminum oxide film on a silicon wafer. From the real-time process monitoring and material analysis, the target poisoning phenomena changes the reactive gas balance at the initial stage, and affects the interlayer formation during the reactive sputtering process.

• Archives of Metallurgy and Materials
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• v.65 no.4
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• pp.1357-1360
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• 2020

The low adherence of diamond-like carbon (DLC) films on titanium (Ti) alloys can be improved by using interlayer coatings. In this study, DLC (a-C:H) films were deposited using radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD), and a TiCN interlayer was applied between the extra low interstitial (ELI) grade of Ti-6Al-4V alloy and a-C:H film. The characteristics of the a-C:H-coated Ti-6Al-4V ELI alloy were investigated using field emission scanning electron microscopy, Vickers hardness, and scratch and wear tests. The DLC (a-C:H) films deposited by rf-PECVD had a thickness of 1.7 ㎛, and the TiCN interlayer had a thickness of 1.1 ㎛. Vickers hardness of the DLC (a-C:H) films were increased as a result of the influence of the TiCN interlayer. The resulting friction coefficient of the a-C:H-coated Ti-6Al-4V with the TiCN interlayer had an extremely low value of 0.07.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.8
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• pp.7-12
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• 2010

In this paper, $C_{60}$ based Organic thin film transistor OTFTs) have been fabricated using BPhen(Bathophenanthroline) and BPhen doped with Cs interlayers between $C_{60}$ active layer and Al electrodes to improve the electrical performance. The addition of the BPhen layer resulted in enhanced performances by reducing surface roughness between organic-metal interface. And the contact resistance was reduced by using the BPhen doped with Cs interlayer with co-evaporation method. These performances suggests that the $C_{60}$ based OTFT with BPhen doped with Cs interlayer is a promising application in the fabrication of n-type organic transistors.

• Journal of the Korean Ceramic Society
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• v.35 no.3
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• pp.219-230
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• 1998

Various interlayer materials have been tested for active metal(Cusil ABA) brazing of Si3N4/S. S316 joint. In general multilayer joint had higher strength(80-150 MPa) and better reliability than monolayered one. The joint with Cu(0.2)/Mo(0.3)/Cu(0.2mm) interlayer showed the highest bending strength of abou 490 MPa and the joint with Cu(0.2)/Mo(0.3mm) interlayer the best reliability (14.6 Weibull modulus). The stresses distributed in joint materials during 4-point bending test were estimated by CAE von Mises analysis; the estimated stresses were In good agreement with the measured data. In multilayer joint Cu was though to reduce the residual stresses induced by the difference in thermal expansion coefficient between the ceramic Mo and metal It apperared that a Cu/Mo was optimum interlayer material for Si3N4/S. S316 joint with high bending strength (420 MPa) and reliability. In addition the various shapes and types of compound were examined by EPMA in joining interface.

• Journal of the Korean institute of surface engineering
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• v.25 no.2
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• pp.82-89
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• 1992

The effect of interlayer coating of Ni and Ti on corrosion behavior was studied in TiN ion plated steel plate. Interlayer coating was carried out in a single and bi-layer to a various thickness combination prior to final TiN coating of $2\mu\textrm{m}$. Corrosion behavior was evaluated by anodic polarization test in 1N H2SO4 as well as salt spray test. Porosity of each coating was also tested by using SO2 test. Corrosion resistance was improved with increasing the thickness of Ni interlayer coating and Ni-Ti interlayer coating markedly enhanced the corrosion resistance. Ni/Ti interlayer coating of $2\mu\textrm{m}$/2$\mu\textrm{m}$ prior to $2\mu\textrm{m}$ TiN coating decreased the corrosion current density of active range by an order of 4 and that of passive range by an order of 1. This improvement was associated with the retardation of corrosive agent penetration with increasing coating thickness and inherent corrosion resistance of Ni and Ti interlayers, Ni/Ti interlayers coating were also very effective in improvement of corrosion resistance under salt atmosphere.

• Smart Media Journal
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• v.8 no.2
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• pp.80-85
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• 2019

Generally, interlayer noise is measured in decibels (A) in terms of free field. In this paper, we propose a measurement method of interlayer vibration acceleration in the diffusion field perspective. The proposed method can represent a vibration-embodied formula similar to the sensitivity of earthquake intensity when the natural vibration of apartment house is measured by acceleration with its average value of $20mm/s^2$ represented by an the geometric progression of radix. Based on this theory, this paper proposes a method to show the optimal user experience (UX) by applying the interlayer vibration acceleration of the epicenter to the system of human - computer interaction (HCI).

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.191-199
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• 2000

The reflection-amplitude approximation is used to calculate the interlayer exchange coupling in (001) Co/Cu/Co multilayers. The dependence of the phase factor of the reflection amplitude on the energy and wave vector is included. The contribution of each period is calculated and the results are compared with those from the asymptotic behavior. It is shown that the energy and wave-vector dependence of the phase factor may affect the interlayer exchange coupling significantly.