• Journal of the Korean Society of Industry Convergence
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• v.24 no.6_2
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• pp.909-917
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• 2021

This study was carried out experimentally on the production and properties of silicon nanopowders characteristics using a transferred type arc plasma apparatus. To investigate the properties of silicon nanopowder, the purity of argon gas(99.999%, 99.9%) and the partial pressure ratio of nitrogen gas(0~90%) were varied. The total pressure in chamber is 400Torr and the silicon chunk amount used as raw material is 300g. The power supplied to the cathode to generate arc plasma was 9~12kW/h, and the electrode was made of tungsten and graphite with a diameter of 13mm. The particle size, impurity elements and powder evaporation rate of the silicon powder were analyzed using the XRD, FE-SEM, TEM and electronic scale. According to the purity of argon gas, the silicon evaporation rate and the particle size were similar, and impurities were generated more in the case of 99.9% purity than 99.999%. When argon gas and nitrogen gas were mixed in the chamber, the silicon evaporation rate and particle size increased as the partial pressure ratio of nitrogen gas increased. In particular, when the partial pressure ratio of nitrogen gas was 80%, the silicon evaporation rate 80g/h, and the particle size was about 80~100nm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.1
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• pp.5-14
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• 2003

Principles of a novel pulse growing method are described. The method realized in the crystal growing on a seed from melts under raw melt feeding provided a more reliable control of the crystallization process when producing large alkali halide crystals. The slow natural convection of the melt in the crucible at a constant melt level is intensified by rotating the crucible, while the crystal rotation favors a more symmetrical distribution of thermal stresses over the crystal cross-section. Optimum rotation parameters for the crucible and crystal have been determined. The spatial position oi the solid/liquid phase interface relatively to the melt surface, heaters and the crucible elements are considered. Basing on that consideration, a novel criterion is stated, that is, the immersion extent of the crystallization front (CF) convex toward the melt. When the crystal grows at a <> CF immersion, the raised CF may tear off from the melt partially or completely due to its weight. This results in avoid formation in the crystal. Experimental data on the radial crystal growth speed are discussed. This speed defines the formation of a gas phase layer at the crystal surface. The layer thickness il a function of time a temperature at specific values of pressure in the furnace and the free melt surface dimensions in the gap between the crystal and crucible wall. Analytical expressions have been derived for the impurity component mass transfer at the steady-state growth stage describing two independent processes, the impurity mass transfer along the <> path and its transit along the <> one. The heater (and thus the melt) temperature variation is inherent in any control system. It has been shown that when random temperature changes occur causing its lowering at a rate exceeding $0.5^{\circ}C/min$, a kind of the CF decoration by foreign impurities or by gas bubbles takes place. Short-term temperature changes at one heater or both result in local (i.e., at the front) redistribution of the preset axial growth speed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.6
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• pp.1462-1468
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• 2014

Xe gas is moved to target from GPM. It is used to feasible nuclear reaction from proton of 30MeV cyclotron being investigated by the Xe-124 gas target system. This system is divided into four parts. The hardware system was constructed by solidworks 3-D CAD and Helium supply is to cool the Havor foil. The Cooling water has the job of cooling down the temperature when Xe gas is being investigated in the target. Temperature and pressure gauges are attached to be checked easily. GPM has the part that prepares to transport Xe gas. There are storage vessel that stores Xe gas, the cold trap that filters humidity and impurity and lastly storage vessel that temporarily stores Xe gas. HCS using the helium is to clean and cool for each part. These parts are configured with SIEMENS PLC and PcVue monitoring program for more comfortable and easy maintenance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.66-69
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• 1997

The p-GaN fins doped with the impurity of Zn were grown on n-GaN films to prevent the defects from the lattice mismatch with sapphire substrates by HVPE. For growth of the high quality n-GaN, the optimized conditions were at first deduced from the results of various HCI gas flow rates and growth temperatures. On the basis of these conditions, p-GaN films were grown and investigated of the characteristics. The FWHM of the double crystal rocking curve of n-GaN was decreased and the hexagonal phases on the surface of GaN films were tend to be vivid with the inoement of HCI gas flow rates. Finally the n-type GaN films with FWHM of 648arcsec were obtained at 10cc/min of HCI gas. As the GaN films were grown with the above conditions, Zn was introduced in the form of vapor as a dopant for p-GaN films. But when Zn vaporized at 77$0^{\circ}C$ was doped to the films, the crystallites of Zn were distributed uniformly on the surface of the GaN film due to the over-doped.

• Korean Chemical Engineering Research
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• v.52 no.3
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• pp.340-346
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• 2014

Continuous and dense ZIF-7 membranes were successfully synthesized on ${\alpha}-Al_2O_3$ porous substrate via two-step crystallization technique. ZIF-7 seeding layer was first deposited on porous ${\alpha}-Al_2O_3$ substrate by in-situ low temperature crystallization, and then ZIF-7 membrane layer can be grown through the secondary high-temperature crystallization. Two synthesis solutions with different concentration were used to prepare ZIF-7 seeding layer and membrane layer on porous ${\alpha}-Al_2O_3$ substrate, respectively. As a result, a continuous and defect-free ZIF-7 membrane layer can be prepared on porous ${\alpha}-Al_2O_3$ substrate, as confirmed by scanning electron microscope. XRD characterization shows that the resulting membrane layer is composed of pure ZIF-7 phase without any impurity. A single gas permeation test of $H_2$, $O_2$, $CH_4$ or $CO_2$ was conducted based on our prepared ZIF-7 membrane. The ZIF-7 membrane exhibited excellent H2 molecular sieving properties due to its suitable pore aperture and defect-free membrane layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.580-585
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• 2004

Silicon dioxide (SiO$_2$) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO$_2$ films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of $O_2$ gas flow ratios from 0 to 200 1pm. This article presents the SiO$_2$ gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO$_2$ film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.

• Analytical Science and Technology
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• v.19 no.1
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• pp.1-8
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• 2006

The isotope dilution method was used for the determination of Br impurity in $1000{\mu}g/g$ Cl standard solution. Since relatively pure KCl salt was used for the preparation of the Cl standard solution, the Br impurity determination suffers from both spectral and non-spectral interferences due to the presence of a large amount of K and Cl matrices. AG2-X8 anion-exchange resin was employed to separate the Br analyte from the matrices, and RF power was raised to 1500 W and nebulizer gas flow rate was lowered to 0.77 L/min to reduce background from the $ArArH^+$ molecular ions. The Br impurity in the $1000{\mu}g/g$ Cl standard solution was determined to be 43.7 ng/g with the standard addition method. The analytical result was in good agreement with 41.2 ng/g (RSD 1.6%) determined by the isotope dilution method to lower uncertainty from poor reproducibility of the anion-exchange process.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.14-18
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• 2008

Bismuth-substituted yttrium iron garnet(Bi:YIG) films, which show excellent magnetic and magneto-optical properties as well as low optical losses by optimizing their deposition and post-annealing condition, have been attracting great attention in optical device research area. In this study, the Bi:YIG thick films were deposited with the aerosol deposition method for the final purpose of applying them to optical isolators. Since the aerosol deposition is based on the impact adhesion of sub-micrometer particles accelerated by a carrier gas to a substrate, the flow rate of carrier gas, which is in proportion to mechanically collision energy, should be treated as an important parameter. The Bi:YIG($Bi_{0.5}Y_{2.5}Fe_5O_{12}$) particles with $100{\sim}500$ nm in average diameter were carried and accelerated by nitrogen gas with the flow rate of 0.5 l/min${\sim}$10 l/min. The coercive force decreased from 51 Oe to 37 Oe exponentially with increasing gas flow rate. This is presumably due to the fact that the optimal collision energy results in reduction of impurity and pore, which makes the film to be soft magnetically. The saturation magnetization decreased due to crystallographical distortion of the film with increasing gas flow rate.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.39-39
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• 1999

The KSTAR (Korea Superconducting Tokamak Advanced Research) tokamak is a nuclear fusion experimental device for a long pulse/steady-state plasma operation, adopting fully superconducting magnets. In accordance with completion of the basic design of the torus vacuum vessel and the enclosing cryostat, the vacuum pumping and gas fueling basic design has been developed to fulfil the physics requirements. The ultra-high vacuum pumping and sophisticated gas fueling system of the machine is essential to achieve such roles for optimized plasma performance and operation. Recently the vacuum exhaust system using dedicated pumping ports for the vacuum vessel and cryostat has been modified to meet more reliable and successful performance of the KSTAR[Fig. 1].In order to achieve the required base pressure of 5 x 10-9 torr, the total impurity load to the vessel internal is limited to ~5 x 10-5 torr-1/x, while the cryostat base pressure is kept as ~5 x 105 torr to mitigate the thermal load applied to the superconducting magnets. Each KSTAR fueling system will be separately capable of fueling gas at a rate of 50 torr-1/x, consistent with the given pumping throughput. In order to initiate a plasma discharge in KSTAR, the vacuum vessel is filled to a gas pressure of few 10-6 to few 10-4 torr, and additional gas injection is required to maintain and increase the plasma density during the course of the discharge period.

• Journal of the Korean Electrochemical Society
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• v.11 no.1
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• pp.42-46
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• 2008

Even though fuel cell have high efficiency when pure hydrogen from gas tank is used as a fuel source, it is more beneficial to generate hydrogen from city gas (mainly methane) in residential application such as domestic or office environments. Thus hydrogen is generated by reforming process using hydrocarbon. Unfortunately, the reforming process for hydrogen production is accompanied with unavoidable impurities. Impurities such as CO, $CO_2$, $H_2S$, $NH_3$, $CH_4$, and $CH_4$ in hydrogen could cause negative effects on fuel cell performance. Those effects are kinetic losses due to poisoning of the electrode catalysts, ohmic losses due to proton conductivity reduction including membrane and catalyst ionomer layers, and mass transport losses due to degrading catalyst layer structure and hydrophobic property. Hydrogen produced from reformer eventually contains around 73% of $H_2$, 20% or less of $CO_2$, 5.8% of less of $N_2$, or 2% less of $CH_4$, and 10ppm or less of CO. This study is aimed at investigating the effect of carbon dioxide on fuel cell performance. The performance of PEM fuel cell was investigated using current vs. potential experiment, long run(10 hr) test, and electrochemical impedance measurement when the concentrations of carbon dioxide were 10%, 20% and 30%. Also, the concentration of impurity supplied to the fuel cell was verified by gas chromatography(GC).