• Journal of Korean Vacuum Science & Technology
• /
• 제3권1호
• /
• pp.1-9
• /
• 1999

This paper presents a newly enhanced damage model in Monte Carlo (MC) simulation for the accurate prediction of 3-Dimensional (3D) as-implanted impurity and point defect profiles induced by ion implantation in (100) crystal silicon. An empirical electronic energy loss model for B, BF2, As, P and Si self implant over the wide energy range has been proposed for the ULSI device technology and development. Our model shows very good agreement with the SIMS data over the wide energy range. In the damage accumulation, we considered the self-annealing effects by introducing our proposed non-linear recomvination probability function of each point defect for the computational efficiency. For the damage profiles, we compared the published RBS/channeling data with our results of phosphorus implants. Our damage model shows very reasonable agreement with the experiments for phosphorus implants.

• 전자공학회논문지A
• /
• 제28A권9호
• /
• pp.736-742
• /
• 1991

N$^{+}$poly gate NMOSFETs and p$^{+}$ poly gate (surface type) PMOSFETs with three different gate oxides(SiO2, NO, and ONO) were fabricated. The rapid thermal nitridation and reoxidation techniques have been applied to gate oxide formation. The current drivability of the ONO NMOSFET shows larger values than that of the SiO2 NMOSFET. The snap-back occurs at a lower drain voltage for SiO$_2$ cases for ONO NMOSFET. Under the maximum substrate current bias conditions, hot-carrier effects inducting threshold voltage shift and transconductance degradation were investigated. The results indicate that ONO films exhibit less degradation in terms of threshold voltage shift. It was confirmed that the ONO samples achieve good improvement of hot-carrier immunity. In a SiO$_2$ SC-PMOSFET, with significant boron penetration, it becomes a depletion type (normally-on). But ONO films show excellent impurity barrier properties to boron penetration from the gate.

• E2M - 전기 전자와 첨단 소재
• /
• 제10권6호
• /
• pp.581-588
• /
• 1997

The ionization energy and degree of ionization for Si and Ge with boron doping are calculated. The hole mobilities are then calculated as a function of doping concentration using the relaxation time approximation. When the screening effect is taken into account, the reduction of ionization energy results in the increase of degree of ionization. As a result, the calculated Si mobility becomes closer to the experimental data, whereas the calculated Ge mobility is almost independent of the screening effect. The inclusion of the broadening effect in the mobility calculation overestimates the ionized impurity scattering. As compared with the experiment, the screening effect is not avoidable to calculate Si and Ge mobilities, and the broadening effect must accompany with the hopping process.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.11-12
• /
• 2005

2 차원 MEDICI 시뮬레이터를 이용하여 CMOS 회로의 전기적 특성을 조사하였다. CMOS 인버터 회로는 LDMOSFET를 이용하였는데, LDMOSFET에서 전류 및 스위칭 특성에 많은 영향을 주는 곳은 채널이라고 생각되는데, 채널에서의 불순물 농도 변화에 의한 CMOS 회로의 voltage transfer특성, low input voltage($V_{IL}$), high input voltage($V_{IH}$)등을 조사하였다. LDMOSFET에서 N 채널의 농도는 $V_{IL}$에, P 채널의 농도는 $V_{IH}$에 많은 영향을 주었다.

• 태양에너지
• /
• 제7권1호
• /
• pp.35-41
• /
• 1987

This paper presents a comprehensive computer simulation of hydrogenated amorphous p-i-n silicon solar cells. The physical mechanism governing solar cell operation has been modeled and solved numerically by Runge-Kutta-Gill method. Effects of gap state density, dopant impurity, diffusion length and interface recombination velocity on solar cell performance are investigated. Numerical results show that the electric field in i-region is not uniform but depends strongly on voltage and position. A rather poor fill factor may be due to the electric field variation and short diffusion length. It is found out that the life time should be improved in order to increase a fill factor and a conversion efficiency.

• Nuclear Engineering and Technology
• /
• 제51권2호
• /
• pp.394-401
• /
• 2019

The failure of steam generators (SGs) due to corrosion is one of the most important problems in power plants. Impurities usually accumulate in the hot sides of SG and form deposits on the SG surfaces. In this paper, the sensitivity analysis of the accumulation of water impurities in the heat exchangers of nuclear power plants is presented. The convection-diffusion equation of the liquid phase on the heated surfaces is derived and then solved by the finite volume method. Also, the effects of the thermal-hydraulic parameters in the form of dimensionless numbers, such as $Pe_q$, $Pe_u$, $k_q$(relative solubility of impurity between the steam and water) on the impurities concentration are studied.

• 한국주조공학회지
• /
• 제24권1호
• /
• pp.45-51
• /
• 2004

Fe and Si are common impurity elements in the aluminum alloys. In this investigation, the effects of the addition of Fe and Si on the age-hardening behaviors of the Al-Cu-Mn-Ti-Zr-Cd casting alloys were examined through hardness measurements, calorimetric techniques and observation of the transmission electron microscopy. The addition of Fe depresses the formation of GPII and ${\theta}'$, and thus retards the peak aging time and reduces the peak hardness of the Al-Cu-Mn-Ti-Zr-Cd alloys. On the contrary, the addition of Si accelerates the formation of GPII and ${\theta}'$ and thus accelerates age-hardening behaviors of the Al-Cu-Mn-Ti-Zr-Cd alloys.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.561-561
• /
• 2012

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as fast electron mobility, high thermal conductivity and optical transparency, and also found many applications such as field-effect transistors (FET), energy storage and conversion, optoelectronic device, electromechanical resonators and chemical sensors. Several techniques have been developed to form the graphene. Especially chemical vapor deposition (CVD) is a promising process for the large area graphene. For the electrically isolated devices, the graphene should be transfer to insulated substrate from Cu or Ni. However, transferred graphene has serious drawback due to remaining polymeric residue during transfer process which induces the poor device characteristics by impurity scattering and it interrupts the surface functionalization for the sensor application. In this study, we demonstrate the characteristics of solution-gated FET depending on the removal of polymeric residues. The solution-gated FET is operated by the modulation of the channel conductance by applying a gate potential from a reference electrode via the electrolyte, and it can be used as a chemical sensor. The removal process was achieved by several solvents during the transfer of CVD graphene from a copper foil to a substrate and additional annealing process with H2/Ar environments was carried out. We compare the properties of graphene by Raman spectroscopy, atomic force microscopy(AFM), and X-ray Photoelectron Spectroscopy (XPS) measurements. Effects of residual polymeric materials on the device performance of graphene FET will be discussed in detail.

• The Korean Journal of Ceramics
• /
• 제3권1호
• /
• pp.57-61
• /
• 1997

The effects of pH of solution on structural, electrical, and optical properties of CdS thin films prepared by solution growth method were investigated. With increasing pH of the solution, both crystallinity and transmittance of CdS thin film were deteriorated due to impurities and CdS particles, which were produced by homogeneous nucleation and adsorbed on the surface of CdS thin films. The films were strongly adherent to substrates and has low resistivity of 10~$10^2{\omega}cm$ regrardless of deposition conditions. After annealing at 30$0^{\circ}C$ in Ar atmosphere, the resistivity decreased due to desorption of impurity ions as well as the formation of S vacancies, but after annealing above 35$0^{\circ}C$ it increased by an agglomeration of S vacancies. After annealing in air atmosphere, the film resistivity increased because of the formation of oxide particle in grain boundaries.

• 전기화학회지
• /
• 제11권1호
• /
• pp.42-46
• /
• 2008

연료전지는 수소를 직접 사용하는 것이 가장 효율이 높지만 가정이나 사무실에서는 수소 저장탱크를 사용하기보다는 도시가스(메탄가스)를 연료 source로 하여 수소를 생산하는 것이 유리하다. 연료전지에 사용하는 수소는 천연가스나 바이오가스, 탄화수소계열의 연료를 개질하여 생산하며 개질반응과정에서 필연적으로 여러 성분의 불순물이 포함되어 있다. CO, $CO_2$, $H_2S$, $NH_3$, $CH_4$등의 불순물이 포함된 수소연료가 PEM fuel cell에 공급되면 연료전지 성능에 영향을 준다고 보고되어 있다. 이러한 영향에는 전극 촉매의 피독에 의한 kinetic losses, 전해질막과 촉매이온층의 양이온 전도성 감소에 의한 ohmic losses 그리고 촉매층의 구조나 소수성 감소에 의한 mass transport losses가 있다. 개질기에서 생산된 수소연료는 약 73%의 $H_2$와 20% 이하의 $CO_2$, 5.8% 이하의 $N_2$, 2% 이하의 $CH_4$, 10ppm 이하의 CO로 최종 공급된다. 본 연구에서는 연료 중에 $CO_2$가 고분자전해질 연료전지 anode측 성능에 미치는 영향을 조사하였다. 실험은 연료전지에 공급되는 연료중에 $CO_2$농도를 10%, 20%, 30%로 전류와 전압의 성능곡선과 장시간(10시간)실험 그리고 임피던스를 측정하였다. 또한 가스크로마토그래피를 이용하여 순수한 수소와 $CO_2$가 함유된 수소의 혼합을 통해 나온 연료전지 inlet에서의 불순물의 농도를 검증하였다.