• Korean Journal of Metals and Materials
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• v.50 no.9
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• pp.659-667
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• 2012

Alloy 617 is a Ni-base superalloy and a candidate material for the intermediate heat exchanger (IHX) of a very high temperature gas reactor (VHTR) which is one of the next generation nuclear reactors under development. The high operating temperature of VHTR enables various applications such as mass production of hydrogen with high energy efficiency. Alloy 617 has good creep resistance and phase stability at high temperatures in an air environment. However, it was reported that the mechanical properties decreased at a high temperature in an impure helium environment. In this study, high-temperature corrosion tests were carried out at $850^{\circ}C-950^{\circ}C$ in a helium environment containing the impurity gases $H_2$, CO, and $CH_4$, in order to examine the corrosion behavior of Alloy 617. Until 250 h, Alloy 617 specimens showed a parabolic oxidation behavior at all temperatures. The activation energy for oxidation in helium environment was 154 kJ/mol. The SEM and EDS results elucidated a Cr-rich surface oxide layer, Al-rich internal oxides and depletion of grain boundary carbides. The thickness and depths of degraded layers also showed a parabolic relationship with time. A normal grain growth was observed in the Cr-rich surface oxide layer. When corrosion tests were conducted in a pure helium environment, the oxidation was suppressed drastically. It was elucidated that minor impurity gases in the helium would have detrimental effects on the high-temperature corrosion behavior of Alloy 617 for the VHTR application.

• 전기의세계
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• v.17 no.2
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• pp.16-26
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• 1968

Cds is possible to add excess donors and to compensate partially using other group metals as acceptors. The impurities can ble incorporated either during crysta growth or by diffusion into a bulkcrystal. The addition of rimpurities leads also to the production of vacancies in a manner depending on the atmosphere surrounding the crystal during growth, during the diffusion process or using bulk. Cds of the mentioned above affects spectral sensitivity, speed of response, the variation on photocurrent, electron life time, and decay of photoconductivity with temperature and with intensity of illumination. In the work to be deseribed, these properties have been studied between liquid nitrogen and room temperature. In addition, the electron trap distribution has been correlated with speed of response, variation of photocurrent with temperature in various atmosphere. Four major trapping levels have been observed, and their identification with impurity and vacancy levels is discussed. And also the effects of lattice imperfections on the photoconductive properties CdS were investigated in detail.

• Journal of the Korean Ceramic Society
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• v.19 no.4
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• pp.300-308
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• 1982

A new perovskite type compound, (Pb1a-χKy□χ-y) (Zr0.33Ti0.67)O3-χ+y/2 was proposed and synthesized by "Wet-Dry Combination Technique". This defect ferroelectric material was characterized by partial substitutions of K+ for Pb+2 in Pb(Zr0.33Ti0.67)O3. This material was mono-phasic perovskite compound at 800℃ for 1hr., but ZrO2 was more or less isolated from the (Pb1a-χKy□χ-y) (Zr0.33Ti0.67)O3-χ+y/2. As a result, snitering temperature, sintered density, curie temperature, and dielectric constant of test pieces decreased and a-axis was nearly constant, while c-axis gradually decreased with the value x in the region of tetragonal phase of PZT. It was also recognized that the defect structure caused by adding K+ was found in both A-site cation and O-site anion vacancies in the defect PZT.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2005.04a
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• pp.265-268
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• 2005

A new method for measurement of the pore size in a nanohoneycomb structure using atomic force microscopy (AFM) was proposed. Porous type anodic aluminum oxide (AAO) was fabricated as a nanohoneycomb structure to measure the pore size. For measuring pore sizes from AFM images, a criterion was set in porous type AAO. The pore sizes from AFM images were compared with those from SEM images, and the results showed good agreement. The relationship between the pore size and widening time was found to be linear in the range of this study. It was understood as the synchronized effects of the impurity gradient in outer oxide of AAO, mechanical packing and mass transfer increase.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.162-165
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• 1991

Oxygen behaviors in CZ-silicon wafer, grown by the Lucky Advanced Materials Inc. that is a pioneer of silicon material industries in Korea, were investigated to simulate effects on the device performance of oxygen, neglecting the effect of other impurity content, defects and thermal history. Silicon wafers were annealed through simulated 16K SRAM thermal cycle. As initial oxygen concentration increased up to 16.7ppma the amount of oxygen precipitation increased up to 10.6ppma and the bulk microdefect density increased up to $10.3{\times}10^3/mm^2$, but the depth of the denuded zone decreased to $5.0{\mu}m$

• Journal of IKEEE
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• v.15 no.2
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• pp.143-148
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• 2011

MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.68-71
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• 1998

The effect of Mn and Nb additions on the electrical properties of BaTiO$_3$ has been studied by means of equilibrium electrical conductivity as a function of temperature, oxygen partial pressure(Po$_2$) and composition. If the manganese ion is added to the normal Ti site, i.e. BaTi$_{1-x}Mn_xO_{\delta-6}$, the equilibrium conductivity shows strong evidence of acceptor-doped behavior. The conductivity minimum, corresponding to the transition from oxygen excess, p-type behavior to oxygen deficient, n-type behavior with decreasing Po$_2$, is displaced to lower Po$_2$ and is broadened and flattened. The partial replacement of Mn ion with Nb decreases the acceptor-doped effect and the total replacement exhibits a typical donor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped samples, for the p-type region, the electrical conductivity follows the 1/6th power dependence of oxygen partial pressure.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.292-295
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• 1999

We investigated the effects of Pd impurities on cube-textures in cold rolled and recrystallized PtPd tapes The sample were made from Pt$_{1-x}Pd_x$ alloys (x from 0 to0.34) by rolling at low temperature. The thickness of the tapes were about 100 ${\mu}$m. The PtPd[111] pole figures of X-ray Diffraction for all the samples indicated similar deformed textures. But the recrystallized textures after annealing showed that a better cube texture was formed in the sample of larger x. The final textures were sensitive to annealing time and temperature when x was increased.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.99-101
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• 1999

To improve the texture and the hardness of Ni substrates, we added impurities such as Mn, Fe, Co, Cu and Cr and investigated the effect of impurities on the texture and the hardness of Ni tapes. The Ni tapes with 0.2% Co, Cr, Cu, showed poor in-plane textures. However, the Ni tapes with 0.1 ${\sim}$ O.2% Mn (or Fe), showed much better textures. We'll describe the detailed effects of the amount of Mn impurities.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.39 no.5
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• pp.20-25
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• 2007

Henequen fibers were treated by electron beam irradiation and by NaOH to make surface modification for better bonding in the manufacture of biocomposite. Impurity removal and carbonyl group formation were noticed in the previous study by electron beam irradiation, but extensive cellulose degradation were also noticed. To evaluate the effects of electron beam irradiation on cellulosic fibers further, henequen fibers, cotton pulp, cotton fibers, and cellophane were irradiated by electron beam, and their changes of cellulose viscosity, chemical composition, and tensile strength were measured and analyzed.