• Progress in Superconductivity
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• 제1권2호
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• pp.135-140
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• 2000

Distribution of Pr ions between Y- and Ba-site of the $Y(Ba_{1-Xn}Pr_{Xn})_2Cu_3O_y$ ($0{\leq}Xn{\leq}{0.3}$, Xn : nominal composition) material prepared by the solid state reaction method was studied. Although the samples have narrow superconducting transition, tiny peaks of $Y_2BaCuO_5$ impurity phase are included in the x-ray diffraction patterns suggesting that some of the Pr ions are entered into the Y-site. The distribution of Pr ions between Y- and Ba-site was determined by measuring the mass fraction of YBCO and $Y_2BaCuO_5$ phase for each sample through the Rietveld analysis of the x-ray diffraction data. About 60 % of Pr ions occupy the Y-site regardless of the Pr content. Various superconducting parameters such as the oxygen content and the hole concentration etc. are compared before and after the impurity correction.

• 전기의세계
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• 제20권2호
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• pp.9-14
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• 1971

N type single crystal CdTe is grown by doping Gallium as 0.01 percent, by using zone melting method. And also p type CdTe is grown by doping Ag, Sb, and Te as 0.01%. Resistivity and Concentration of the n.p type single crystal are measured. And then Li ions are implanted on the n type CdTe by high voltage accellerator with different amount of impurity. Indium is evaporated on the p type in high vacuum condition. These sample are heated so as to make P-N Junction in Argon gas flow. Electrical properties for solar cell are investigated. Photovoltage and current are found to be varyed according to following factor: 1) amount of impurity 2) diffusion thickness 3) temperature and time for making P-N junction. Efficiency of the P-N Junction evaporated Indium is 6.5 when it is heated at 380.deg. C for 15 minutie.

• Bulletin of the Korean Chemical Society
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• 제25권2호
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• pp.233-236
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• 2004

Total impurity analysis of a primary standard solution is one of the essential procedures to determine an accurate concentration of the standard solution by the gravimetry. Bi impurity is determined in Pb standard solutions by inductively coupled plasma mass spectrometry (ICP-MS). The direct nebulization of the Pb standard solution produces a significant amount of the Pb matrix-induced molecular ions which give rise to a serious spectral interference to the Bi determination. In order to avoid the spectral interference from the interferent $^{208}PbH^+$, the hydride generation method is employed for the matrix separation. The Bi hydride vapor is generated by reaction of the sample solution with 1% sodium borohydride solution. The vapor is then directed by argon carrier gas into the ICP after separation from the mixture solution in a liquid-gas separator made of a polytetrafluoroethylene membrane tube. The presence of 1000 ${\mu}$g/mL Pb matrix caused reduction of the bismuthine generation efficiency by about 40%. The standard addition method is used to overcome the chemical interference from the Pb matrix. Optimum conditions are investigated for the hydride-generation ICPMS. The detection limit of this method is 0.5 pg/mL for the sample solutions containing 1000 ${\mu}$g/mL Pb matrix.

• Nuclear Engineering and Technology
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• 제43권5호
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• pp.429-436
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• 2011

The corrosion of materials exposed to high temperature helium in a very high temperature reactor is caused by interaction with the impurities in the helium. This interaction then induces high temperature mechanical deterioration. By considering the effect of the impurity concentration on material corrosion, a long-term coolant chemistry guideline can be determined for the range of impurity concentration at which the material is stable for a long time. In this work, surface reactions were investigated by analyzing the thermodynamics and the experimental results for Alloy 617 exposed to controlled impure helium at $950^{\circ}C$. Moreover, the surfaces were examined for the Alloy 617 crept in air and in uncontrolled helium, which was explained by possible surface reactions.

• 한국해안해양공학회지
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• 제5권3호
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• pp.232-239
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• 1993

연안역에서의 파동이 오염원의 확산에 미치는 영향에 관한 연구를 수행하였다. 천해근사를 사용하여 기존의 확산방정식을 수심에 관하여 적분함으로써, 임의의 진폭을 갖는 장파조건 및 임의의 흐름조건에 대하여 적용가능한 방정식을 유도하였다. 수립된 방정식을 사용하여 장파가 오염원의 농도에 영향을 미치는 여러 경우에 대하여 고찰하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.88-90
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• 1990

In this study, PN junction solar cell and P$\^$+/-N-N$\^$+/ BSF solar cell, using N-type(111), 10$\^$16/[atoms/cm$\^$-3/] wafer, were fabricated applying that ion implant method whose dose are 1E14, 1E15, 3E15 and its acceleration energy is 50Key, 100Key respectively. The impurity concentration of two types of front-side are 10$\^$18/[atoms/cm$\^$-3/] and back-side concentration for BSF solar cell is 10$\^$17/[atoms/cm$\^$-3/]. As a result of comparison for 2 typical types of cells out of various fabricated samples, open circuit voltage (Voc), short circuit current(Isc) of BSF solar cell are larger than those of PN solar cell by 48[%], 14[%]. Considering that the efficiency of BSF cell is 2.5[%] as well as PN solar cell's is 7.5[%], 10.0[%] of efficiency improvement effect can be obtained from BSF solar cell. Futhermore, in consequence of front-side impurity concentration change from 10$\^$17/[atoms/cm$\^$-3] to 10$\^$20/[atoms/cm$\^$-3/] alternately, the most ideal result can be expected when it is 10$\^$18/[atoms/cm$\^$-3/].

• 공업화학
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• 제8권3호
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• pp.389-394
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• 1997

경각형 결정화에 의하여 벤젠-사이클로헥산 혼합물로부터 벤젠의 결정화에서 결정에 내포된 불순물(사이클로헥산)의 분포가 조사되었다. 결정의 순도에 미치는 결정성장속도의 영향을 파악하였으며 모든 실험결과는 Wintermantel 모델에 의해 도시될 수 있었다. 결정의 순도는 과냉각 정도가 클수록, 주입조성이 낮을 수록, 결정성장속도가 클 수록 낮았으며 결정성장속도는 불순물의 내포를 지배하는 가장 중요한 변수이다. 결정화 초기에 형성된 결정은 불순물을 많이 내포하고 있으며 결정의 두께가 증가함에 따라 불순물은 잔여용융액쪽으로 이동되어 배제됨을 알 수 있었다. 경막결정화에서 결정에 내포된 불순물은 일정두께의 결정층에 온도구배를 이용하여 결정을 부분용해시키면 불순물의 확산에 의하여 제거될 수 있음을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.27-27
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• 2008

The different concentration Indium doped ZnO:Al films were grown on glass substrates (Corning 1737) at $200^{\circ}C$ by pulsed laser deposition. The indium doping in AZO films shows the critical effect on the crystallinity, resistivity, and optical properties of the films. The AZO films doped with 0.3 atom % indium content exhibit the highest crystallinity, the lowest resistivity of $4.5\times10^{-4}\Omega$-cm, and the maximum transmittance of 93%. The resistivity of the indium doped-AZO films is strongly related with the crystallinity of the films. The carrier concentration in the indium doped-AZO films linearly increases with increasing indium concentration. The mobility of the AZO films with increasing indium concentration was reduced with an increase in carrier concentration and the decrease in mobility was attributed to the ionized impurity scattering mechanism. In an optical transmittance, the shift of the optical absorption edge to shorter wavelength strongly depends on the electronic carrier concentration in the films.

• 한국진공학회지
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• 제14권1호
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• pp.17-23
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• 2005

본 논문은 글로우방전 질량분석법(Glow Discharge Mass Spectrometry: GDMS)을 이용하여 구리 박막내의 미량 불순물의 농도분석과 음의 기판 바이어스에 대한 구리 박막내의 불순물의 농도변화에 대해서 고찰하였다. 구리 박막은 실리콘 기판 위에 비질량 분리형 이온빔 증착장비를 이용하여 기판 바이어스를 걸지 않은 경우와 -50 V의 기판 바이어스를 걸은 상태에서 증착하였다. 전기를 통하지 않는 분석 샘플의 경우, 직류(DC) GDMS에 의한 분석시, 샘플 표면에서의 charge-up 효과에 의해 분석에 어려움이 있었지만, 본 실험에서는 간편하게 분석이 가능하도록 샘플을 알루미늄 포일(foil)로 감싸서 구리 박막으로부터 실리콘 기판 뒤의 샘플 홀더까지 전기적 접촉이 이루어지도록 하였다. 구리 타겟과 증착된 구리 박막들에 대한 GDMS 분석결과에 의해서, 전체적으로 박막내의 불순물의 양이 음의 기판 바이어스에 의해 줄어듦으로써 구리 박막의 전체 순도를 높일 수 있다는 것을 알게 되었다. 음의 기판 바이어스에 의한 불순물들의 농도변화는 각각의 불순물의 이온화 포텐셜의 차이에 의한 것으로, 박막 증착시 플라즈마내의 Penning ionization effect와 본 논문에서 제시한 이온화 과정에 의해 각 불순물의 농도변화가 설명되어질 수 있었다. 또한, 기판 위에서의 구리 이온들의 충격에 의한 cleaning effect도 박막내의 불순물의 농도변화에 기여했다고 판단된다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권7호
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• pp.304-307
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• 2005

The $In_2S_3\;and\;In_2S_3:Co^{2+}$ thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for $In_2S_3\;and\;1.81eV\;for\;In_2S_3:Co^{2+}$ at 298K. The direct energy band gap was 2.67ev for $In_2S_3:Co^{2+}$ thin films. Impurity optical absorption peaks were observed for the $In_2S_3:Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry. The electrical conductivity($\sigma$), Hall mobility(${\mu}_H$), and carrier concentration (n) of the $In_2Se_3$ thin film were measured, and their temperature dependence was investigated.