• 반도체디스플레이기술학회지
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• 제12권2호
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• pp.93-98
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• 2013

Nanoimprint lithography (NIL) is a next generation technology for fabrication of micrometer and nanometer scale patterns. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. To successfully imprint a nanosized pattern with the thermal NIL, the process conditions such as temperature and pressure should be appropriately selected. This starts with a clear understanding of polymer material behavior during the thermal NIL process. In this paper, a filling process of the polymer resist into nanometer scale cavities during the thermal NIL at the temperature range, where the polymer resist shows the viscoelastic behaviors with consideration of stress relaxation effect of the polymer. In the simulation, the filling process and the residual layer formation are numerically investigated. And the effects of pressure and temperature on NIL process, specially the residual layer formation are discussed.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.613-614
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• 2013

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.151-152
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• 2010

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 추계학술대회 논문집
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• pp.531-532
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• 2006

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 춘계학술대회 논문요약집
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• pp.12-12
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• 2004

나노임프린트 관련되어 전 세계적으로 지금까지 4개회사가 장비 및 공정기술 개발을 하고 있으나 대부분 수년 전에 창업한 회사이며, 4개의 나노임프린트 장비 관련 회사는 미국의 Nanonex, 오스트리아의 EVG사, 미국의 Molecular Imprint Inc. (MII),스웨덴이 Obducat이다. 개발된 장비의 대부분은 수작업이 필요한 연구용 장비로 현재 공정 기술개발을 위해 활용되고 있으며, MI사 장비가 최초로 양산 적용을 목표로 개발하여 국내에도 도입 되어있다. 일본에서는 아직 장비 개발이 시도된 바 없으며 현재 관련 공정 기술개발을 하고 있다.(중략)

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 추계학술대회 논문집
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• pp.431-432
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• 2010

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.343-348
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• 2007

Molecular dynamics study of thermal NIL (Nano Imprint Lithography) process is performed to examine stamp-resist interactions. A layered structure consists of Ni stamp, poly-(methylmethacrylate) thin film resist and Si substrate was constructed for isothermal ensemble simulations. Imposing confined periodicity to the layered unit-cell, sequential movement of stamp followed by NVT simulation was implemented in accordance with the real NIL process. Both vdW and electrostatic potentials were considered in all non-bond interactions and resultant interaction energy between stamp and PMMA resist was monitored during stamping and releasing procedures. As a result, the stamp-resist interaction energy shows repulsive and adhesive characteristics in indentation and release respectively and irregular atomic concentration near the patterned layer were observed. Also, the spring back and rearrangement of PMMA molecules were analyzed in releasing process.

• 소성∙가공
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• 제18권8호
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• pp.616-624
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• 2009

In this work we demonstrate the hot-embossing process under different forming conditions such as forming temperature, load, and holding time in pressing, in order to determine the suitable conditions required for linear patterning on polymer plates (PC). Results showed that the replicated pattern depth increased in proportion to an increase in the forming temperature, load, and time. The reduction of the workpiece thickness increased according to the holding time in the pressing process. In the process of time, the reduction ratio of the workpiece thickness decreased due to the surface area increment of the workpiece, while the pressure on the workpiece declined. In order to reduce the bulging ratio we introduced a temperature difference between the upper and the lower punch.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권3호
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• pp.132-138
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• 2003

We investigated the polarization retention characteristics of ferroelectric capacitors with $Pb(Zr,Ti)O_3$ (PZT) thin films which were fabricated by different deposition methods. In thermally-accelerated retention tests, PZT films which were prepared by a chemical solution deposition (CSD) method showed rapid decay of retained polarization charges as the thickness of the films decreased down to 100 nm, while the films which were grown by metal organic chemical vapor deposition (MOCVD) retained relatively large non-volatile charges at the corresponding thickness. We concluded that in the CSD-grown films, the thicker interfacial passive layer compared with the MOCVD-grown films had an unfavorable effect on retention behavior. We observed the existence of such interfacial layers by extrapolation of the total capacitance with thickness of the films and the capacitance of these layers was larger in MOCVD-grown films than in CSD-grown films. Due to incomplete compensation of surface polarization charges by the free charges in the metal electrodes, the interfacial field activated the space charges inside the interfacial layers and deposited them at the boundary between the ferroelectric layer and the interfacial layer. Such space charges built up an internal field inside the films, which interfered with domain wall motion, so that retention property at last became degraded. We observed less imprint which was a result of less internal field in MOCVD-grown films while large imprint was observed in CSD-grown films.

• 한국정보전자통신기술학회논문지
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• 제16권1호
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• pp.8-17
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• 2023

기존 liquid crystal display(LCD) 공정에서 Indium Tin Oxide(ITO) 투명전극과 폴리이미드 배향막의 러빙 공정은 액정을 정렬하고 전계를 인가하기 위하여 필수적인 공정이다. 하지만 ITO의 증착은 높은 진공을 요구하며, 러빙 공정은 정전기에 의해 소자가 손상될 수 있는 단점이 존재한다. 본 논문에서는 기존 ITO 투명전극을 대체하기 위하여 PEDOT:PSS와 Multi-wall carbon nanotube(MWNT)를 혼합하여 PEDOT:PSS 나노복합체를 제조하고, 러빙 공정을 대체하기 위하여 나노 주름 구조 몰드를 통한 나노임프린팅을 통하여 박막을 형성함으로써 기존 액정 디스플레이의 투명전극과 배향막 두 가지 박막을 PEDOT:PSS/MWNT 나노복합체 박막 하나만으로 기능하게 하여 공정을 단순화 하였다. 전사된 나노 주름을 따라 액정이 잘 배향됨을 확인하였으며, 이를 기반으로 만들어진 액정 셀에서 박막 내 MWNT의 함량이 높아질수록 박막의 전기전도도가 증가하여 낮은 구동 전압과 빠른 응답 속도를 갖는다는 것을 확인하였다. 본 연구를 통해 공정 단순화와 용액공정에 의한 공정 단가 절감, 기존 러빙 공정의 단점을 해결하는데 기여 할 수 있을 것으로 기대된다.