• 한국신재생에너지학회:학술대회논문집
• /
• 2011.05a
• /
• pp.75.1-75.1
• /
• 2011

화석연료의 고갈과 온실가스 배출의 증가로 지속 가능한 친환경 에너지 생산이 요구되는 가운데, 태양광 발전은 이러한 조건을 만족시키는 에너지 생산 방안으로 주목받고 있다. 태양광 발전은 태양 직사광을 이용한 발전 방법 때문에 실외에 설치되어야 하며 이에 따라 외부의 충격이나 오염물질로부터 태양전지 패널을 보호하기 위한 보호층이 필수적이다. 그러나 보호층에 의한 입사광의 반사 및 먼지나 황사에 의한 보호층의 오염 등은 태양전지의 발전 효율을 감소시키는 요인으로 작용하여 이에 대한 대응이 필요하다. 본 연구에서는 PET 필름에 나노 임프린트 리소그래피 및 핫 엠보싱 공정을 이용하여 moth-eye 반사방지 패턴을 형성함으로써 보호층에서의 입사광 반사를 억제하였다. 또한, 이러한 반사방지 패턴에 초소수성 자기조립단분자막을 코팅하여 표면 에너지를 낮춤으로써 먼지 및 황사에 의해 오염되었을 경우에도 빗물에 의해 오염 물질이 쉽게 씻겨 내릴 수 있는 자정기능을 부여하였다. 이러한 반사방지를 통한 입사광 투과량의 향상 및 초소수성 표면에 의한 자정작용에 의하여 태양전지의 발전 효율이 증가되었다.

• Journal of the Korean Ceramic Society
• /
• v.56 no.4
• /
• pp.354-359
• /
• 2019

Information security films that can ensure personal privacy by reducing the viewing angle of display screens were fabricated by microlouver patterning and a ZnO nano-ink filling process. Optical simulation results demonstrated that all the microlouver films showed good security performances. Security performances were evaluated as calculated relative luminance ratios compared between the side and front. Based on the simulation results, microlouver films were fabricated by UV imprint lithography and nano-ink bar coating. However, distortion of the microlouver pattern occurred with the use of high-viscosity nano-inks such as ZrO₂ and TiO₂, and the CuO-filled microlouver film suffered from very low optical transmittance. Accordingly, the effects of ZnO filling height on security performance were intensively investigated through simulation and experimental measurements. The fabricated microlouver film with a 75-㎛-high ZnO filling exhibited a good relative luminance ratio of 0.75 at a 60° side angle and a transmittance of 44% at a wavelength of 550 nm.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.390-390
• /
• 2014

Soft-lithography 기술 중의 하나인 Micro-Contact Printing (${\mu}$-CP) 기술은 패턴이 형성된 mold 위에 고분자 물질을 코팅하고 기판과 접촉시켜, 패턴 된 부분만 기판으로 전사시켜 패턴을 형성하는 방법이다. ${\mu}$-CP 기술은 Imprint 방식과 비교하여 잔여물을 제거하기 위한 ashing 공정이 필요 없으며, 상대적으로 패턴이 전사되기 위한 공정 온도와 압력이 낮은 장점이 있다. 한편, 기존의 Photolithography 기술로 유기기판에 패턴을 형성하는 것은 제한이 있으며, 자외선에 의해 유기기판의 특성이 변화될 수 있다. 또한 패턴 형성 후 고분자 패턴을 제거하는 용매가 기판이 손상 받게 된다. 본 실험에서는 poly (1H,1H,2H,2H-perfluorodecyl methacrylate) polymer (PFDMA) films을 패턴 된 poly (dimethylsiloxane) (PDMS) mold 위에 코팅하고 ${\mu}$-CP 기술을 통해 poly (methylmethacrylate) (PMMA), poly (vinyl pyrrolidone) (PVP)등과 같은 유기기판 위에 고분자 패턴 형성을 하였다. 이때 전사 가능한 온도는 상온이며, 압력은 코팅된 PFDMA films이 기판과 접촉될 수 있는 정도만 필요하다. PFDMA가 상온에서 전사 가능한 이유는 유리전이온도가 상온보다 낮기 때문이다. 또한 접촉각을 측정하여 접착력을 계산하면 PFDMA와 기판과의 접착력이 상대적으로 높기 때문이다. PFDMA는 플루오르계 용매에 제거되기 때문에 유기기판의 손상을 최소화 할 수 있다. ${\mu}$-CP 기술을 이용한 PFDMA의 패턴 형성 방법은 물질의 특성으로 flexible 및 organic device 제작에 응용 될 수 있다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.251.1-251.1
• /
• 2013

Combination of oxidative vacuum annealing and oxygen plasma treatment can serve as a simple and efficient method of line-width modification of imprinted nanopatterns. Since the vacuum annealing and oxygen plasma could lead mass loss of polymeric materials, either one of the process can yield a narrowed patterns. However, the vacuum annealing process usually demands quite high temperatures (${\geq}300^{\circ}C$) and extended annealing time to get appreciable line-width reduction. Although the plasma treatment may be considered as an effective low temperature rapid process for the line-width reduction, it is also suffering for the lowered controllability on application to very fine patterns. We have found that the vacuum annealing temperature can be lowered by introducing the oxygen in the vacuum process and that the combination of oxygen plasma treatment with the vacuum annealing could yield the best result in the line-with reduction of the imprinted polymeric nanopatterns. Well-defined line width reduction by more than 50% was successfully demonstrated at relatively low temperatures. Furthermore, it was verified that this process was applicable to the nanopatterns of different shapes and materials.

• Journal of the Microelectronics and Packaging Society
• /
• v.22 no.1
• /
• pp.63-67
• /
• 2015

In this study, we demonstrate the change of optical characteristic by thickness of metal deposition on nano metal grid polarizer film fabrication. Nano metal grid polarizer film consists of aluminium grid polarizer layer on PET (Polyethylene phthalate) substrate. We aim at metal grid layer formation for the large nano wire grid polarizer fabrication. we draw process conditions of the nano metal grid polarizer film fabrication to improve transmittance and extinction ratio and Nano wire grid polarizer film (NWGP) film is fabricated with 140 nm pitch, 70 nm width, and 70 nm depth of metal grid on optimum design conditions. As a result, we get high optical properties of nano wire grid polarizer which is the maximum transmittance of 80% and the extinction ratio of $10^6$ at 600 nm wavelength respectively.

• Journal of the Microelectronics and Packaging Society
• /
• v.23 no.4
• /
• pp.107-112
• /
• 2016

In this paper, the hydrophobic rough surfaces were prepared by employing a conventional nano-imprint lithography technique, and the effects of surface parameter, ratio of the top surface to the flat unit cell, on the impingement behaviors of liquid droplet were investigated to improve robustness of hydrophobic functionality. The critical height defined for the transition from rebound to fragmentation is measured by droplet impingement test in order to study dynamic behavior of an impinged droplet. It showed the critical height decreased with high surface parameter while it increased with low surface parameter. However, the critical height decreased again as surface parameter decreased further. Observed results suggest that the optimized surface pattern should be designed for the increased critical height.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2012.05a
• /
• pp.81.1-81.1
• /
• 2012

나노임프린트 리소그라피(Nano-Imprint Lithography, NIL) 기술은 기판위의 resin을 나노구조물이 각인된 스탬프로 눌러서 나노구조물을 형성하는 기술로, 경제적이고 효과적으로 나노구조물을 제작할 수 있는 기술이다. 그중에서도 UV 기반의 나노임프린트(UV-NIL) 기술은 resin을 투명한 스탬프로 누른뒤 UV로 경화시켜 나노구조물을 형성하는 기술로써 고온, 고압($140{\sim}180^{\circ}C$, 10~30bar)이 필요한 가열식 나노임프린트 기술에 비해 상온, 상압($20^{\circ}C$, 1bar)에서도 구조물 형성이 가능하여 다층구조 형성에 적합하다. 연속적인 임프린팅 공정에 의해 resin이 quarz 스탬프에 잔류하여 패터닝에 결함을 유발하게 되므로 오염물을 제거하기 위한 세정공정이 필요하다. 하지만 UV에 의해 경화된 resin은 cross-linking을 형성하여 화학적인 내성이 증가하게 되므로 제거하기가 어렵다. 현재는 resin 제거를 위한 세정공정으로 SPM($H_2SO_4/H_2O_2$) 세정이 사용되고 있는데 세정시간이 길고 세정 후에 입자 또는 황 잔유물이 남으며 많은 유해용액 사용의 문제점이 있어 효과적으로 resin을 제거할 세정공정이 필요한 상황이다. 본 연구에서는 친환경적인 UV 세정 및 오존수 세정공정을 적용하여 경화된 resin을 제거하는 연구를 진행하였다. 실험샘플은 약 100nm 두께의 resin을 증착한 $1.5cm{\times}1.5cm$ $SiO_2$ 쿠폰 wafer를 사용하였으며, UV 및 오존수의 처리시간을 달리하여 resin 제거효율을 평가하였다. ATR-FTIR 장비를 사용하여 시간에 따른 resin의 두께를 측정한 결과, UV 세정으로 100nm 높이의 resin중에 80nm의 bulk resin이 단시간에 제거가 되었고 나머지 20nm의 resin thin film은 오존수 세정으로 쉽게 제거되는 것을 확인 하였다. 또한 표면에 남은 resin residue와 particle을 제거하기 위해서 SC-1 세정을 진행하였고 contact angle과 optical microscope 장비를 사용하여 resin이 모두 제거된 것을 확인하였다.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.36 no.1
• /
• pp.25-29
• /
• 2012

The properties of carbon nanotube-metal hybrid nanostructures are critically dependent on the structure and chemistry of the metal-carbon nanotube interface. In this study, the interface between nickel and multi-walled carbon nanotubes (CNTs) has been investigated using physical vapor-deposited (sputter-deposited) nickel onto the surface of freestanding carbon nanotube arrays processed by nano-imprint lithography (NIL). These interfaces have been characterized by transmission electron microscopy and 3D atom probe tomography. In the nickel nanocrystals growing on the CNT surface, a metastable hexagonal $Ni_3C$-types phase appears to be stabilized. The structural stability of the nickel-CNT interface is also discussed and related to potential implications for the properties of these nanocomposites.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2010.05a
• /
• pp.788-791
• /
• 2010

We design 64-bit ROM IP for RFID tag chips using printed CMOS non-volatile memory IP design technology for a printed CMOS process. The proposed 64-bit ROM circuit is using ETRI's $0.8{\mu}m$ CMOS porocess, and is expected to reduce process complexity and cost of RFID tag chips compared to that using a conventional silicon fabrication based on a complex lithography process because the poly layer in a gate terminal is using printing technology of imprint process. And a BL precharge circuit and a BL sense amplifier is not required for the designed cell circuit since it is composed of a transmission gate instead of an NMOS transistor of the conventional ROM circuit. Therefore an output datum is only driven by a DOUT buffer circuit. The Operation current and layout area of the designed ROM of 64 bits with an array of 8 rows and 8 columns using $0.8{\mu}m$ ROM process is $9.86{\mu}A$ and $379.6{\times}418.7{\mu}m^2$.

• Korean Journal of Materials Research
• /
• v.15 no.9
• /
• pp.589-593
• /
• 2005

Nanoimprinting lithography (NIL) is known as a suitable technique for fabricating nano and micro structures of high definition. Hot embossing is one of NIL techniques and can imprint on thin films and bulk polymers. Key issues of hot embossing are time and expense needed to produce a stamp withstanding a high temperature and pressure. Fabrication of a metal stamp such as an electroplated nickel is cost intensive and time consuming. A ceramic stamp made by silicon is easy to break when the pressure is applied. In this paper, a plastic stamp using a high temperature epoxy was fabricated and tested. The plastic stamp was relatively inexpensive, rapid to produce and durable enough to withstanding multiple hot embossing cycles. The merits of low viscosity epoxy solutions were a fast degassing and a rapid filling the microstructures. The hot embossing process with plastic stamp was performed on PMMA substrates. The hot embossing was conducted at 12.6 bar, $120^{\circ}C$ and 10 minutes. An imprinted PMMA wafer was almost same value of the plastic stamp after 10 times embossing. Entire fabrication process from silicon master to plastic stamp was completed within 12 hours.