• Title/Summary/Keyword: Illumination measurement

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Antenna Test Range for Telecommunication Satellite (통신위성용 안테나 테스트 레인지)

  • Lim, Seong-Bin;Kim, Tae-Youn;Choi, Seok-Won;Sim, Eun-Sup
    • Aerospace Engineering and Technology
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    • v.6 no.2
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    • pp.52-59
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    • 2007
  • Telecommunication satellite consists of a bus system and an RF payload system with high efficiency and high gain reflector antennas. Antenna measurement and also RF system performance (antenna under test, payload and satellite level) have to be evaluated enough before launching in the far-field range or equivalent test range. Basically far-field range is required in a range from two hundred meters to several kilo meters, and it is highly constrained to the externa1 environment, like the RF and the whether environment So the compact antenna test range is developed and used efficiently without external environments as in-door facility. This paper describes the configuration of the compact antenna test range, the range error, and the physical concept of the plane wave illumination Also, it provides a overall design of the anechoic chamber and range parameter values to accommodate the precision measurements in antenna test range.

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Optimization of ZnO:Al properties for $CuInSe_2$ superstrate thin film solar cell

  • Lee, Eun-U;Park, Sun-Yong;Lee, Sang-Hwan;Kim, U-Nam;Jeong, U-Jin;Jeon, Chan-Uk
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.36.1-36.1
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    • 2010
  • While the substrate-type solar cells with Cu(In,Ga)Se2 absorbers yield conversion efficiencies of up 20%[1], the highest published efficiency of Cu(In,Ga)Se2 superstrate solar cell is only 12.8% [2]. The commerciallized Cu(In,Ga)Se2 solar cells are made in the substrate configuration having the stacking sequence of substrate (soda lime glass)/back contact (molybdenum)/absorber layer (Cu(In,Ga)Se2)/buffer layer (cadmium sulfide)/window layer (transparent conductive oxide)/anti reflection layer (MgF2) /grid contact. Thus, it is not possible to illuminate the substrate-type cell through the glass substrate. Rather, it is necessary to illuminate from the opposite side which requires an elaborate transparent encapsulation. In contrast to that, the configuration of superstrate solar cell allows the illumination through the glass substrate. This saves the expensive transparent encapsulation. Usually, the high quality Cu(In,Ga)Se2 absorber requires a high deposition temperature over 550C. Therefore, the front contact should be thermally stable in the temperature range to realize a successful superstrate-type solar cell. In this study, it was tried to make a decent superstrate-type solar cell with the thermally stable ZnO:Al layer obtained by adjusting its deposition parameters in magnetron sputtering process. The effect of deposition condition of the layer on the cell performance will be discussed together with hall measurement results and current-voltage characteristics of the cells.

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Growth and Optoelectric Characterization of $ZnGa_{2}Se_{4}$ Single Crystal Thin Films by Hot Wall Epitaxy (Hot Wall Epitaxy (HWE)에 의한 $ZnGa_{2}Se_{4}$ 단결정 박막 성장과 광전기적 특성)

  • Park, Chang-Sun;Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.163-166
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    • 2001
  • The stochiometric mix of evaporating materials for the $ZnGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $ZnGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnGa_{2}Se_{4}$ single crystal trun films measured from Hall effect by van der Pauw method are $9.63{\times}10^{17}cm^{-3}$, $296cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c axis of the $ZnGa_{2}Se_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 251.9 meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on $ZnGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton $(A^{0},X)$ having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

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Growth and Optoelectric Characterization of $CdGa_{2}Se_{4}$ Single Crystal Thin Films by Hot Wall Epitaxy (Hot Wall Epitaxy (HWE)에 의한 $CdGa_{2}Se_{4}$ 단결정 박막 성장과 광전기적 특성)

  • Hong, Kwang-Joon;Park, Chang-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.167-170
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    • 2001
  • The stochiometric mix of evaporating materials for the $CdGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_{2}Se_{4}$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},345cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_{2}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high Quality crystal and neutral bound exiciton $(D^{0},X)$ having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

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Development of Computer Vision System for Individual Recognition and Feature Information of Cow (II) - Analysis of body parameters using stereo image - (젖소의 개체인식 및 형상 정보화를 위한 컴퓨터 시각 시스템 개발(II) - 스테레오 영상을 이용한 체위 분석 -)

  • 이종환
    • Journal of Biosystems Engineering
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    • v.28 no.1
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    • pp.65-76
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    • 2003
  • The analysis of cow body parameters is important to provide some useful information fur cow management and cow evaluation. Present methods give many stresses to cows because they are invasive and constrain cow postures during measurement of body parameters. This study was conducted to develop the stereo vision system fur non-invasive analysis of cow body features. Body feature parameters of 16 heads at two farms(A, B) were measured using scales and nineteen stereo images of them with walking postures were captured under outdoor illumination. In this study, the camera calibration and inverse perspective transformation technique was established fer the stereo vision system. Two calibration results were presented for farm A and fm B, respectively because setup distances from camera to cow were 510 cm at farm A and 630cm at farm B. Calibration error values fer the stereo vision system were within 2 cm for farm A and less than 4.9 cm for farm B. Eleven feature points of cow body were extracted on stereo images interactively and five assistant points were determined by computer program. 3D world coordinates for these 15 points were calculated by computer program and also used for calculation of cow body parameters such as withers height. pelvic arch height. body length. slope body length. chest depth and chest width. Measured errors for body parameters were less than 10% for most cows. For a few cow. measured errors for slope body length and chest width were more than 10% due to searching errors fer their feature points at inside-body positions. Equation for chest girth estimated by chest depth and chest width was presented. Maximum of estimated error fur chest girth was within 10% of real values and mean value of estimated error was 8.2cm. The analysis of cow body parameters using stereo vision system were successful although body shape on the binocular stereo image was distorted due to cow movements.

Physical Measurement of Color Changes in Foods (식품(食品)의 색도변화(色度變化) 측정법(測定法))

  • Cho, Sung-Hwan
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.13 no.1
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    • pp.1-8
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    • 1984
  • The tools and techniques for measuring the spectral distribution of light emitted by, transmitted by, or reflected from food surfaces are described for determining the extent to which original natural color is preserved in processing and subsequent storage of foods. Color differences may be evaluated indirectly in terms of some physical characteristic of the sample or extracted fraction thereof that is largely responsible for the color characteristics. For evaluation more directly in terms of what the observer actually seen, color differences are measured by reflectance spectrophotometry and photoelectric colorimetry and expressed as differences in psychophysical indexes such as luminous reflectance and chromaticity. The standard system, against which other systems could be compared, is the one recommended by the International Committee on illumination and which is based on the 'standard observer', which is a simulated standard eye, consisting of three primary color filters Z, with X being essentially amber in color, Y, green and Z, blue. Any spectrophotometric curve of reflectance obtained from the surface of an object can be integrated in terms of X, Y and Z. Psychophysical notation may be converted by standard methods to the colorimetrically more descriptive terms of Munsell hue, value and chroma.

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RF Compatibility Design & Verification for the SAR Satellite (SAR 위성의 고주파 호환성 설계 및 검증)

  • Won, Young-Jin;Park, Hong-Won;Moon, Hong-Youl;Woo, Sung-Hyun;Kim, Jin-Hee
    • Aerospace Engineering and Technology
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    • v.10 no.2
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    • pp.37-48
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    • 2011
  • Synthetic Aperture Radar(SAR) is a powerful and well established microwave remote sensing technique which enables high resolution measurement of Earth surface independent of weather conditions and sunlight illumination. KARI has been developing the first Korea SAR satellite which is scheduled to be launched in this year. The SAR satellite mainly consists of the bus platform and SAR payload. Most of all, the RF compatible design during the design phase and the verification of the RF compatibility during the testing phase is very important procedure for the in-orbit performance guarantee because the SAR payload radiates high power through the SAR antenna. In this study, the SAR satellite design criteria and verification procedure for the RF compatibility are described. In addition, this paper describes the RF full radiation testing (RF auto-compatibility testing) for the verification of the RF performance robustness, the testing configuration, and the test results.

Growth and Optoelectric Characterization of CdGa$_2$Se$_4$ Sing1e Crystal Thin Films (Hot Wall Epitaxy (HWE)에 의한 CdGa$_2$Se$_4$ 단결정 박막 성장과 광전기적 특성)

  • 홍광준;박창선
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.167-170
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    • 2001
  • The stochiometric mix of evaporating materials for the CdGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 630$^{\circ}C$ and 420$^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CdGa$_2$Se$_4$ single crystal thin films measured from Hall erect by van der Pauw method are 8.27x10$\^$17/ cm$\^$-3/, 345 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on CdGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$\_$X/) existing only high quality crystal and neutral bound exiciton (D$\^$0/,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excision were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV,

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Growth and Optoelectric Characterization of $ZnGa_{2}Se_{4}$ Sing1e Crystal Thin Films (Hot Wall Epitaxy (HWE)에 의한$ZnGa_{2}Se_{4}$단결정 박막 성장과 광전기적 특성)

  • 박창선;홍광준
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.163-166
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    • 2001
  • The stochiometric mix of evaporating materials for the ZnGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa$_2$Se$_4$ single crystal thin films measured from Hall effect by van der Pauw method are 9.63x10$^{17}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively, From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa$_2$Se$_4$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr were 251.9 MeV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on ZnGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$_{x}$) existing only high quality crystal and neutral bound excition (A$^{0}$ ,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.on energy of impurity was 122 meV.

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Optical properties of HgTe and HgTe/CdTe core-shell structured nanocrystals (HgTe와 HgTe/CdTe core-shell 구조의 나노입자의 광학적 특성 비교)

  • Park, Byoung-Jun;Kim, Hyun-Suk;Cho, Kyoung-Ah;Kim, Jin-Hyong;Lee, Joon-Woo;Kim, Sang-Sig
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.56-59
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    • 2004
  • HgTe and HgTe/CdTe core-shell structured nanocrystals(NCs) were synthesized in aqueous solution by colloidal method. HgTe and HgTe/CdTe NCs structure showed very similar XRD patterns because of the same lattice constant and crystal structure of both samples. The absorption and photoluminescence(PL) spectrum of the synthesized HgTe NCs revealed the strong exitonic peak in the IR region. The PL spectrum of HgTe/CdTe NCs have the intense peak in about 700nm shorter than that of HgTe by 400nm. The photocurrent measurement of colloidal NCs are performed using He-Ne laser for light source. The photocurrent of HgTe NCs shows the instant increased current response to light, but HgTe/CdTe NCs revealed a decreased current when lighted to the sample. In the vacuum condition, it shows reverse result that current increased under the illumination of light and it is thought that the molecules like the hydro-oxygen gas in the air give an important effect on the current mechanism.

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