• KSII Transactions on Internet and Information Systems (TIIS)
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• 제9권6호
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• pp.2289-2301
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• 2015

Mobile devices are becoming powerful enough to realize augmented reality (AR) application. This paper introduces two AR methods to estimate an environmental illumination distribution of a scene. In the first method, we extract the lighting direction and intensity from input images captured with a front-side camera of a mobile device, using its orientation sensor. The second method extracts shadow regions cast by three dimensional (3D) AR marker of known shape and size. Because previous methods examine per pixel shadow intensity, their performances are much affected by the number of sampling points, positions, and threshold values. By using a simple binary operation between the previously clustered shadow regions and the threshold real shadow regions, we can compute efficiently their relative area proportions according to threshold values. This area-based method can overcome point sampling problem and threshold value selection. Experiment results demonstrate that the proposed methods generate natural image with multiple smooth shadows in real-time.

• 제어로봇시스템학회논문지
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• 제22권9호
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• pp.738-744
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• 2016

In this paper, a robust visual odometry system has been proposed and implemented in an environment with dynamic illumination. Visual odometry is based on stereo images to estimate the distance to an object. It is very difficult to realize a highly accurate and stable estimation because image quality is highly dependent on the illumination, which is a major disadvantage of visual odometry. Therefore, in order to solve the problem of low performance during the feature detection phase that is caused by illumination variations, it is suggested to determine an optimal threshold value in the image binarization and to use an adaptive threshold value for feature detection. A feature point direction and a magnitude of the motion vector that is not uniform are utilized as the features. The performance of feature detection has been improved by the RANSAC algorithm. As a result, the position of a mobile robot has been estimated using the feature points. The experimental results demonstrated that the proposed approach has superior performance against illumination variations.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 ITC-CSCC -2
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• pp.927-930
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• 2000

Visual features of lip area play an important role in the visual speech information. We are concerned about correct lip area as region of interest (ROI). In this paper, we propose a robust and fast method for locating the mouth corners. Also, we define a region of interest at mouth during speech. A method, which we have used, only uses the horizontal and vertical image operators at mouth area. This searching is performed by fitting the ROI-template to image with illumination control. Most of the lip extraction algorithms are dependent on luminosity of image. We just used the binary image where the variable threshold is applied. The variable threshold varies to illumination condition. In order to control those variations, the gray-tone is converted to binary image by threshold, which is obtained through Multiple Linear Regression Analysis (MLRA) about divided 2D special region. Thus we obtained the region of interest at mouth area, which is the robust extraction about illumination. A region of interest is automatically extracted.

• 정보처리학회논문지A
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• 제17A권4호
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• pp.189-196
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• 2010

본 논문에서는 모서리점, 경계선 및 영역, 적응적 임계값 등과 같은 복합특징을 이용하여 증강현실 시스템에서 마커의 차단현상이 발생되거나 어두운 환경에서도 사용 가능하면서 정합 성능을 개선한 마커검출 알고리즘을 제안한다. 기존의 ARToolkit에서는 마커의 일부분이 사용자에 의해 가려지거나 주위 조명 변화에 의해 입력영상의 밝기 변화가 크게 될 경우, 마커를 추출할 수 없는 반면 제안한 마커추적 알고리즘에서는 마커영역 추출시 적응적 임계값 기법을 사용하여 조명의 변화에 둔감하게 반응하여 정확한 마커영역만을 분리 추출할 수 있다. 그리고 모서리 여부를 판단하고 모서리점이 가려진 경우, 추출된 직선의 교점으로부터 모서리점을 추출하므로 차단에 의해 마커가 가려졌을 때에도 정확한 마커 영역을 추출할 수 있다. 또한, 등록된 마커와의 정합시, 와핑에서 발생되는 마커의 크기 및 중심위치 변화를 보정하는 기법을 추가하여 정합 성능을 개선 시켰다. 실험 결과 제안한 알고리즘은 주위 조명 변화와 차단 현상에 강인하게 마커를 검출하였으며, 유사한 마커 태그를 구분 할 수 있는 정합 유사도가 종전보다 30% 증가한 것을 확인 할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제15권6호
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• pp.315-319
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• 2014

In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin film transistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygen vacancies, which is confirmed via RT PL. A negative shift is observed in the threshold voltage ($V_{TH}$) under illumination with/without the gate bias, and the amount of shift in $V_{TH}$ is proportional to the concentration of oxygen vacancies. This can be explained to be consistent with the ionization oxygen vacancy model where the instability in $V_{TH}$ under illumination is caused by the increase in the channel conductivity by electrons that are photo-generated from oxygen vacancies, and it is maintained after the illumination is removed due to the negative-U center properties.

• 한국정보기술응용학회:학술대회논문집
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• 한국정보기술응용학회 2005년도 6th 2005 International Conference on Computers, Communications and System
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• pp.65-68
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• 2005

In this paper, an algorithm to extract bar-space area is suggested. In a section of bar-code space area the threshold value is computed, and bar and space are extracted according to threshold value. PDF417 is used everyday life and printed in many different materials. The printed PDF417 is especially influenced by various light source. The decision of bar and space is very hard under the change of illumination. The fixed threshold value to distinguish the bar and space can not be applied. in these cases, The proposed algorithm is developed to investigate variable threshold. The variable threshold can be obtained by simple calculation.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.953-956
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• 2009

We have investigated the effect of light on amorphous silicon thin film transistors based photo-sensor applications. We have analyzed the instability caused by electrical gate bias stresses under the light illumination and the effect of photo-induced quasi-annealing on the instability. Threshold voltage ($V_{TH}$) under the negative gate bias stress with light illumination was more decreased than that under the negative gate bias stress without light illumination even though $V_{TH}$ caused by the light-induced stress without negative gate bias was shifted positively. These results are because the increase of carrier density in a channel region caused by the light illumination has the enhanced effect on the instability caused by negative gate bias stress. The prolonged light illumination led to the recovery of shifted VTH caused by negative gate bias stress under the light illumination due to the recombination of trapped hole charges.

• 한국군사과학기술학회지
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• 제15권2호
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• pp.201-207
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• 2012

Pulsed lasers at the 613 nm and 1064 nm wavelengths on nanoseconds have been utilized to characterize the damage on Si photodiode exposed to intense illumination. Morphological damages and structural changes at sites on the photodiode irradiated during microseconds of laser pulses were analyzed by FE-SEM images and XRD patterns, respectively. The removal of oxide coating, ripple, melting marks, ridges, and crater on photodiodes were definitely observed in order of increasing the pulse intensities generated above the damage threshold. Then, the degradation in photosensitivity of the Si photodiode irradiated by high power density pulses was measured as a function of laser irradiation time at the various wavelengths. The free charge carrier and thermal diffusion mechanisms could have been invoked to characterize the damage. The relative photosensitivity data calculated using the thermal diffusion model proposed in this paper have been compared with the experimental data irradiated above the damage threshold.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.302.1-302.1
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• 2016

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) are considered as promising candidates for the upcoming transparent and flexible electronics due to their transparent property, good performance uniformity and possibility to fabricate at a low-temperature. In addition, solution processing metal oxide TFTs may allow non-vacuum fabrication of flexible electronic which can be more utilizable for easy and low-cost fabrication. Recently, for high-mobility oxide TFTs, multi-layered oxide channel devices have been introduced such as superlattice channel structure and heterojunction structure. However, only a few studies have been mentioned on the bias illumination stress in the multi- layered oxide TFTs. Therefore, in this research, we investigated the effects of bias illumination stress in solution-processed bilayer oxide TFTs which are fabricated by the deep ultraviolet photochemical activation process. For studying the electrical and stability characteristics, we implemented positive bias stress (PBS) and negative bias illumination stress (NBIS). Also, we studied the electrical properties such as field-effect mobility, threshold voltage ($V_T$) and subthreshold slop (SS) to understand effects of the bilayer channel structure.