• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.6
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• pp.2289-2301
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• 2015

Mobile devices are becoming powerful enough to realize augmented reality (AR) application. This paper introduces two AR methods to estimate an environmental illumination distribution of a scene. In the first method, we extract the lighting direction and intensity from input images captured with a front-side camera of a mobile device, using its orientation sensor. The second method extracts shadow regions cast by three dimensional (3D) AR marker of known shape and size. Because previous methods examine per pixel shadow intensity, their performances are much affected by the number of sampling points, positions, and threshold values. By using a simple binary operation between the previously clustered shadow regions and the threshold real shadow regions, we can compute efficiently their relative area proportions according to threshold values. This area-based method can overcome point sampling problem and threshold value selection. Experiment results demonstrate that the proposed methods generate natural image with multiple smooth shadows in real-time.

• Journal of Institute of Control, Robotics and Systems
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• v.22 no.9
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• pp.738-744
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• 2016

In this paper, a robust visual odometry system has been proposed and implemented in an environment with dynamic illumination. Visual odometry is based on stereo images to estimate the distance to an object. It is very difficult to realize a highly accurate and stable estimation because image quality is highly dependent on the illumination, which is a major disadvantage of visual odometry. Therefore, in order to solve the problem of low performance during the feature detection phase that is caused by illumination variations, it is suggested to determine an optimal threshold value in the image binarization and to use an adaptive threshold value for feature detection. A feature point direction and a magnitude of the motion vector that is not uniform are utilized as the features. The performance of feature detection has been improved by the RANSAC algorithm. As a result, the position of a mobile robot has been estimated using the feature points. The experimental results demonstrated that the proposed approach has superior performance against illumination variations.

• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.927-930
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• 2000

Visual features of lip area play an important role in the visual speech information. We are concerned about correct lip area as region of interest (ROI). In this paper, we propose a robust and fast method for locating the mouth corners. Also, we define a region of interest at mouth during speech. A method, which we have used, only uses the horizontal and vertical image operators at mouth area. This searching is performed by fitting the ROI-template to image with illumination control. Most of the lip extraction algorithms are dependent on luminosity of image. We just used the binary image where the variable threshold is applied. The variable threshold varies to illumination condition. In order to control those variations, the gray-tone is converted to binary image by threshold, which is obtained through Multiple Linear Regression Analysis (MLRA) about divided 2D special region. Thus we obtained the region of interest at mouth area, which is the robust extraction about illumination. A region of interest is automatically extracted.

• The KIPS Transactions:PartA
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• v.17A no.4
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• pp.189-196
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• 2010

This paper presents an improved marker detection algorithm using hybrid features such as corner, line segment, region, and adaptive threshold values, etc. In usual augmented reality environments, there are often marker occlusion and poor illumination. However, existing ARToolkit fails to recognize the marker in these situations, especially, partial concealment of marker by user, large change of illumination and dim circumstances. In order to solve these problems, the adaptive threshold technique is adopted to extract a marker region and a corner extraction method based on line segments is presented against marker occlusions. In addition, a compensating method, corresponding the marker size and center between registered and extracted one, is proposed to increase the template matching efficiency, because the inside marker size of warped images is slightly distorted due to the movement of corner and warping. Therefore, experimental results showed that the proposed algorithm can robustly detect the marker in severe illumination change and occlusion environment and use similar markers because the matching efficiency was increased almost 30%.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.315-319
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• 2014

In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin film transistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygen vacancies, which is confirmed via RT PL. A negative shift is observed in the threshold voltage ($V_{TH}$) under illumination with/without the gate bias, and the amount of shift in $V_{TH}$ is proportional to the concentration of oxygen vacancies. This can be explained to be consistent with the ionization oxygen vacancy model where the instability in $V_{TH}$ under illumination is caused by the increase in the channel conductivity by electrons that are photo-generated from oxygen vacancies, and it is maintained after the illumination is removed due to the negative-U center properties.

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2005.11a
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• pp.65-68
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• 2005

In this paper, an algorithm to extract bar-space area is suggested. In a section of bar-code space area the threshold value is computed, and bar and space are extracted according to threshold value. PDF417 is used everyday life and printed in many different materials. The printed PDF417 is especially influenced by various light source. The decision of bar and space is very hard under the change of illumination. The fixed threshold value to distinguish the bar and space can not be applied. in these cases, The proposed algorithm is developed to investigate variable threshold. The variable threshold can be obtained by simple calculation.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.953-956
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• 2009

We have investigated the effect of light on amorphous silicon thin film transistors based photo-sensor applications. We have analyzed the instability caused by electrical gate bias stresses under the light illumination and the effect of photo-induced quasi-annealing on the instability. Threshold voltage ($V_{TH}$) under the negative gate bias stress with light illumination was more decreased than that under the negative gate bias stress without light illumination even though $V_{TH}$ caused by the light-induced stress without negative gate bias was shifted positively. These results are because the increase of carrier density in a channel region caused by the light illumination has the enhanced effect on the instability caused by negative gate bias stress. The prolonged light illumination led to the recovery of shifted VTH caused by negative gate bias stress under the light illumination due to the recombination of trapped hole charges.

• Journal of the Korea Institute of Military Science and Technology
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• v.15 no.2
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• pp.201-207
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• 2012

Pulsed lasers at the 613 nm and 1064 nm wavelengths on nanoseconds have been utilized to characterize the damage on Si photodiode exposed to intense illumination. Morphological damages and structural changes at sites on the photodiode irradiated during microseconds of laser pulses were analyzed by FE-SEM images and XRD patterns, respectively. The removal of oxide coating, ripple, melting marks, ridges, and crater on photodiodes were definitely observed in order of increasing the pulse intensities generated above the damage threshold. Then, the degradation in photosensitivity of the Si photodiode irradiated by high power density pulses was measured as a function of laser irradiation time at the various wavelengths. The free charge carrier and thermal diffusion mechanisms could have been invoked to characterize the damage. The relative photosensitivity data calculated using the thermal diffusion model proposed in this paper have been compared with the experimental data irradiated above the damage threshold.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.302.1-302.1
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• 2016

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) are considered as promising candidates for the upcoming transparent and flexible electronics due to their transparent property, good performance uniformity and possibility to fabricate at a low-temperature. In addition, solution processing metal oxide TFTs may allow non-vacuum fabrication of flexible electronic which can be more utilizable for easy and low-cost fabrication. Recently, for high-mobility oxide TFTs, multi-layered oxide channel devices have been introduced such as superlattice channel structure and heterojunction structure. However, only a few studies have been mentioned on the bias illumination stress in the multi- layered oxide TFTs. Therefore, in this research, we investigated the effects of bias illumination stress in solution-processed bilayer oxide TFTs which are fabricated by the deep ultraviolet photochemical activation process. For studying the electrical and stability characteristics, we implemented positive bias stress (PBS) and negative bias illumination stress (NBIS). Also, we studied the electrical properties such as field-effect mobility, threshold voltage ($V_T$) and subthreshold slop (SS) to understand effects of the bilayer channel structure.