• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1547-1549
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• 1996

The electrical and optical switching characteristics of gold-doped silicon p-i-n diodes have been investigated. The device shows a dark switching voltage of about 500 V. The switching voltage decreases rapidly when the illumination level is increased. The differential sensitivity of optical gating over linear region is $d(V_{Th}/V_{Tho})/dP_{Ph}$=0.25/uW. The turn-on delay time and the turn-on rise time decrease with increasing optical pulse power. The turn-off delay and the fall time are negligible.

• Current Applied Physics
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• 제18권12호
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• pp.1496-1506
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• 2018

Organic/inorganic ultraviolet photodetector was fabricated using thermal evaporation technique. Organic/inorganic heterojunction based on thermally evaporated copper (II) acetylacetonate thin film of thickness 200 nm deposited on an n-type silicon substrate is introduced. I-V characteristics of the fabricated heterojunction were investigated under UV illumination of intensity $65mW/cm^2$. The diode parameters such as ideality factor, n, barrier height, ${\Phi}_B$, and reverse saturation current, $I_s$, were determined using thermionic emission theory. The series resistance of the fabricated diode was determined using modified Nord's method. The estimated values of series resistance and barrier height of the diode were about $0.33K{\Omega}$ and 0.72 eV, respectively. The fabricated photodetector exhibited a responsivity and specific detectivity about 9 mA/W and $4.6{\times}10^9$ Jones, respectively. The response behavior of the fabricated photodetector was analyzed through ON-OFF switching behavior. The estimated values of rise and fall time of the present architecture under UV illumination were about 199 ms and 154 ms, respectively. Finally, enhancing the photoresponsivity of the fabricated photodetector, post-deposition plasma treatment process was employed. A remarkable modification of the device performance was noticed as a result of plasma treatment. These modifications are representative in a decrease of series resistance and an increase of photoresponsivity and specific detectivity. The process of plasma treatment achieved an increment of external quantum efficiency from 5.53% to 8.34% at -3.5 V under UV illumination.

• 한국지리정보학회지
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• 제2권2호
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• pp.9-14
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• 1999

본 논문에서는 우리별 3호에 탑재된 지구관측 센서인 MEIS (Multi-spectral Earth Imaging System) 영상의 복사학적 보정 알고리즘에 대해서 기술한다. MEIS 영상은 다른 관측위성 카메라 영상과 마찬가지로 여러 가지 복사학적 오차를 포함하고 있다. 이러한 오차 중 영상의 질적 측면에 가장 큰 영향을 주는 두가지 원인을 소개하고 이 오차의 보정 알고리즘을 제시한다. 제시된 알고리즘은 우리별 3호 영상의 전처리 소프트웨어에 구현되어 여러 영상에 적용하여 검증하였고, 사용자에게는 이러한 복사학적 보정 알고리즘을 통해 보정된 영상이 제공될 예정이다.