• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.28 no.6
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• pp.621-626
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• 2010

For geometric correction of high-resolution images, the authors matched corresponding objects between a large-scale digital map and a QuickBird image to obtain the coefficients of the first order polynomial. Proximity corrections were performed, using the Boolean operation, to perform automated matching accurately. The modified iterative closest point (ICP) algorithm was used between the point data of the surface linear objects and the point data of the edge objects of the image to determine accurate transformation coefficients. As a result of the automated geometric correction for the study site, an accuracy of 1.207 root mean square error (RMSE) per pixel was obtained.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.132-138
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• 2007

Carbon nanotubes (CNTs) arc grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. The structural and field-emissive properties of the CNTs grown are characterized in terms of the substrate-bias applied. Characterization using the various techniques, such as field-omission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the structural properties of the CNTs, including their physical dimensions and crystal qualities, as well as the nature of vertical growth, are strongly dependent upon the application of substrate bias during CNT growth. It is for the first time observed that the provailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negatively substrate-biasing would promote the vertical-alignment of the CNTs grown, compared to positively substrate-biasing. However, the CNTs grown under the positively-biased condition display a higher electron-emission capability than those grown under the negatively-biased condition or without any bias applied.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.541-547
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• 1999

Reactive ion etching process for InP using BCl3/O2/Ar high density inductively coupled plasma was investigated. The experimental design method proposed by the Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power and the chamber pressure were the two dominant parameters affectsing etch results. It was also observed that the etch rate decreased and the surface roughness improved as the ICP power and the bias voltage increased and as the chamber pressure decreased. The Addition of oxygen to the gas mixture drastically improved surface roughness by suppressing the formation of the surface reaction product. The optimum condition was ICP power 600W, bias voltage -100V, 10% $O_2$, 6mTorr, and $180^{\circ}C$, resulting in about 0.15$\mu\textrm{m}$ etch rate with smooth surfaces and vertical mesa sidewalls Also, the maximum etch rate of abut 4.5 $\mu\textrm{m}$/min was obtained at the condition of ICP power 800W, bias voltage -150V, 15% $O_2$, 8mTorr and $160^{\circ}C$.

• Journal of Hydrogen and New Energy
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• v.22 no.2
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• pp.206-212
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• 2011

The effect of process parameters on $H_2$ production from water vapor excited by HF ICP has been qualitatively examined for the first time. With the increase of ICP power, characteristics of $H_2$ production from $H_2O$ dissociation in plasma was divided into 3 regions according to both reaction mechanism and energy efficiency. At the edge of region (II) in the range of middle ICP power, energy effective hydrogen production from $H_2O$ plasma can be achieved. Furthermore, within the region (II) power condition, heating of substrate up to $500^{\circ}C$ shows additional increase of 70~80% in $H_2$ production compared to $H_2O$ plasma without substrate heating. This study have shown that combination of optimal plasma power (region II) and wall heating (around $500^{\circ}C$) is one of effective ways for $H_2$ production from $H_2O$.

• Journal of Environmental Health Sciences
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• v.31 no.1
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• pp.73-78
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• 2005

A determination method of trace Ni(II) and Zn(II) in aqueous solution was studied and developed by adsorbing on titanium dioxide. For this purpose, several conditions were optimized such as the pH of sample solution, adsorption time, the types and concentration acid, and desorption time. The titanium dioxide was added in sample solution which was pH adjusted. Then, the sample solution was stirred for 5 minutes. This mixture was stored in room temperature for 30 minutes to allow adsorption. After filtering and washing the titanium dioxide, the analytes were dissolved from the titanium dioxide on membrane filter by an ultrasonic vibration for 10 minutes in 1.0 M $HNO_3$ solution. Then, this sample solution was analysed using ICP-AES. The adsorption equilibrium was achieved in 30 minutes. The desorption was the most of effective with 1.0 M(mol/l) nitric acid solution, and desorption time was 10 minutes. This procedure was applied for the analysis of two real samples, i.e., brown seaweed and tangle. The recoveries of Ni(II) and Zn(II) in spiked samples were 89.4${\sim}$98.9% for analytes.

• Fibers and Polymers
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• v.5 no.1
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• pp.1-5
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• 2004

The ability of inherently conducting polymer (ICP) coated textiles to recover gold metal from aqueous solutions containing $[AuCl_4]^-$ was investigated. Nylon-lycra, nylon, acrylic, polyester and cotton were coated with a layer of polypyrrole (PPy) doped with 1,5-naphthalenedisulfonic acid (NDSA), 2-anthraquinonesulfonic acid (AQSA) or p-toluenesulfonic acid (pTS). Textiles coated with polyaniline (PAn) doped with chloride were also used. The highest gold capacity was displayed by PPy/NDSA/nylon-lycra, which exhibited a capacity of 115 mgAu/g coated textile, or 9700 mgAu/g polymer. Varying the underlying textile substrate or the ICP coating had a major effect on the gold capacity of the composites. Several ICP coated textiles recovered more than 90 % of the gold initially present in solutions containing 10 ppm $[AuCl_4]^-$ and 0.1 M HCl in less than 1 min. Both PPy/NDSA/nylon-lycra and PAn/Cl/nylon-lycra recovered approximately 60 % of the gold and none of the iron present in a solution containing 1 ppm $[AuCl_4]^-$, 1000 ppm $Fe^{3+}$ and 0.1 M HCl. The spontaneous and sustained recovery of gold metal from aqueous solutions containing $[AuCl_4]^-$ using ICP coated textiles has good prospects as a potential future technology.

• Journal of the Korea Computer Graphics Society
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• v.10 no.4
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• pp.27-36
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• 2004

본 논문에서는 뇌의 하부구조인 해마를 정확하게 분석하기 위한 형상 정규화 방법과 정상인과 간질 환자의 해마를 분류하기 위한 방법을 제시한다. 해마에 대한 형상 분석 과정은 크게 형상 표현을 구축하는 과정, 형상의 유사도를 측정하는 과정, 정상인 집단과 환자 집단을 분류하는 과정으로 이루어진다. 본 연구에서는 해마의 형상 표현으로 메쉬, 골격, 복셀로 이루어진 하이브리드 옥트리 자료구조를 구축하였다. 또한 Iterative Closest Point (ICP) 알고리즘을 사용하여 해마 골격을 기반으로 한 정규화를 수행하였다. 그리고 정규화된 해마 형상을 전역적, 국부적으로 분석하여 최종적으로 입력된 해마가 정상인 또는 간질 환자에 속하는지를 학습된 데이터를 이용하여 분류하였다. 본 논문에서 제시한 ICP 기반의 정규화 방법은 3차원 해마 형상을 정확하게 분석하게 해주고, 골격의 정점 수를 조절함으로써 정규화 시간을 감소시킬 수 있다. 뿐만 아니라 3차원 해마 모델의 형상을 신경망을 통하여 학습시킴으로써 해마의 형상이 변형된 환자 집단과 정상인 집단을 분류하는데 이용할 수 있다.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.12-14
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• 2005

Inductively Coupled Plasma Chemical Vapor Deposition(ICP-CVD)를 이용하여 공정온도 $150^{\circ}C$에서 Nanocrystalline silicon (nc-Si) 박막을 증착하였다. 실험에서 헬륨(He)가스, 수소($H_2$)가스 그리고 헬륨(He)과 수소($H_2$)의 혼합가스로 희석한 사일렌($SiH_4$)을 반응가스로 이용하였다. 이 혼합가스는 3sccm의 사일렌($SiH_4$)에 헬륨(He)과 수소($H_2$)의 주입율을 20sccm에서부터 60sccm까지 변화시켜 조건을 달리하여 사용했다. 증착한 Nc-Si 박막을 X-ray diffraction (XRD)으로 분석하여 각각의 조건에 대한 Nc-Si 박막의 속성을 연구하였다. 헬륨(He) 또는 수소($H_2$) 혼합가스의 주입율이 커지면서 <111>과 <222>의 최고점(peak)이 더 높아졌으며 결정화 되지 않고 비결정질로 남아 있는 성장층(incubation layer)이 얇아졌다. 이 결과는 nc-Si를 증착할 때 사용한 수소($H_2$) 플라즈마와 헬륨(He) 플라즈마의 효과로 설명할 수 있다. 실험을 통해 ICP-CVD로 증착한 nc-Si 박막을 박막 전계효과트랜지스터 (TFT)에서 우수한 특성의 전자수송층(active layer)으로 사용할 수 있는 것을 확인하였다.

• Korean Journal of Computational Design and Engineering
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• v.14 no.2
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• pp.129-136
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• 2009

Generally, curved surfaces of ship hull are deformed by flame bending (line heating), multi-press forming, and die-less forming method. The forming methods generate the required in-plane/bending strain or displacement on the flat plate to make the curved surface. Multi-press forming imposes the forced displacements on the flat plate by controlling the position of each pressing points based upon the shape difference between the unfolded flat plate and the curved object shape. The flat plate has been obtained from the unfolding system that is independent of the ship CAD. Apparently, the curved surface and the unfolded-flat surface are expressed by different coordinate systems. Therefore, one of the issues is to find a registration of the unfolded surface and the curved shape for the purpose of minimum amount of forming works by comparing the two surfaces. This paper presents an efficient algorithm to get an optimized registration of two different surfaces in the multi-press forming of ship hull plate forming. The algorithm is based upon the ICP (Iterative Closest Point) algorithm. The algorithm consists of two iterative procedures including a transformation matrix and the closest points to minimize the distance between the unfolded surface and curved surfaces. Thereby the algorithm allows the minimized forming works in ship-hull forming.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.75-79
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• 2003

We studied InP etch results in high density planar inductively coupled $BCl_3$ and $BCl_3$/Ar plasmas. The investigated process parameters were ICP source power, RIE chuck power, chamber pressure and $BCl_3$/Ar gas composition. It was found that increase of ICP source power and RIE chuck power raised etch rate of InP, while that of chamber pressure decreased etch rate. Etched InP surface was clean and smooth (RMS roughness < 2 nm) with a moderate etch rate ($300\;{\sim}\;500\;{\AA}/min$) after the planar $BCl_3/Ar$ ICP etching. It may make it possible to open a new regime of InP etching with $CH_4/H_2$ - free plasma chemistry. Some amount of Ar addition (< 50%) also improved etch rates of InP, while too much Ar addition reduced etch rates of InP.