• Journal of the Korean Applied Science and Technology
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• v.31 no.3
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• pp.359-366
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• 2014

We investigated an electrochemical properties for Langmuir-Blodgett (LB) films of saturated fatty acid and phospholipid(L-${\alpha}$-dimyristoylphosphatidyl choline, DMPC) mixture. LB films of saturated fatty acid and DMPC monolayer were deposited by the LB method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) in $NaClO_4$ solution. As a result, monolayer LB films of saturated fatty acid and phospholipid mixture was appeared on irreversible process caused by the oxidation current from the cyclic voltammogram. Diffusion coefficient (D) of saturated fatty acid and DMPC mixture(molar ratio 1:1, C12, C14, C16, C18) was calculated $1.2{\times}10^{-3}$, $2.1{\times}10^{-3}$, $1.4{\times}10^{-4}$ and $1.1{\times}10^{-3}cm^2/s$ in 0.05 N $NaClO_4$ solution, respectively.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.5-9
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• 2015

Absorption and luminescence characteristics of disperse red-19 (DR-19) and $TiO_2$ composite have been investigated with various poling electric field strengths. Two step synthetic processes were employed to employ the DR-19 to the $TiO_2$ sol-gel. Firstly, urethane bond formation between DR-19 (-OH) and 3-isocyanatopropyl triethoxysilane (ICPTES, -N=C=O) performed (ICPDR) prior incorporation to the $TiO_2$ sol-gel. Secondary, the hydrolysis of the ethoxy group from the ICPTES and condensation reaction between silanol groups from ICPTES and $TiO_2$ sol-gel were performed. The ICPDR and $TiO_2$ sol-gel ($DRTiO_2$) were mixed and stirred for several days. The composite was coated to the ITO coated glass substrate. Corona poling were performed before drying the composite with various electric field strengths. The absorption intensity decreased with the increase of the poling field strength, which resulted in the increase of poling efficiency. The photoluminescence also decreased as the poling field strength increased. There is long luminescence tail for the poled $DRTiO_2$ film compared with unpoled $DRTiO_2$ film. The luminescence long tail indicates that the self-trapped excitons and polarons were generated when the $DRTiO_2$ film was poled with electric field.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.1-6
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• 2007

In this study, the pentacene thin films were prepared by the soluble process, and characterized fur the application of the organic thin film transistor(OTFT) device. To dissolve the pentacene material, two kinds of solvents such as toluene and chloroform were used, and the effects of these solvents on the properties of pentacene thin films coated on ITO/Glass substrate were investigated. Pentacene thin films were prepared by using spin-coating methode and characterized the surface morphology, crystalline and electrical properties. From the AFM measurement, the surface morphology of the pentacene film dissolved with chloroform was improved compared with the one dissolved with toluene solvent. XRD measurement showed that all prepared pentacene film samples were amorphous crystal phases without crystallization of the films. The electrical properties of the pentacene film dissolved with chloroform showed better results than the ones using toluene solvent by hall measurement system. The carrier concentration and the mobility values of pentacene films using chloroform solvent were found to be $-3.225{\times}10^{14}\;cm^{-3}$ and $3.5{\times}10^{-1}\;cm^2{\cdot}V^{-1}{\cdot}S^[-1}$, respectively. The resistivity was about $2.5{\times}10^2\;{\Omega}{\cdot}cm$.

• Journal of Industrial Convergence
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• v.21 no.3
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• pp.189-194
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• 2023

Recently, various studies on flexible electronic devices have been performed. In this study, the potential of Ag nanowires was evaluated as a material to replace the ITO transparent conductive film. Ag nanomaterials were formed on the glass by a novel brush coating method and an argon plasma evaporation method based on atmospheric pressure plasma. First, the Ag solution is coated on the glass with a brush, and the remaining solvent is removed with atmospheric plasma. During this process of solvent evaporation, a sound is generated by the reaction between the atmospheric plasma and the solvent. Therefore, the remaining amount of the solvent can be confirmed. In order to observe optical properties and electrical results such as reflectance, transmittance, and absorbance according to the number of coatings of the film, the results were analyzed by coating up to 5 times. For the purpose of investigating the interaction of light with Ag nanowires, reflectance and transmittance were measured while changing the wavelength of light from 200 nm to 800 nm. In the case of absorbance, the trend of increasing light absorption of the Ag nanowires according to the coating was clearly confirmed. The electrical properties showed a great change from the time of coating more than 4 times, and in particular, the resistance value was lower than kΩ/cm2 when the coating was applied 5 times. Based on these optical and electrical results, we plan to verify the possibility of a transparent conductive film by applying it to electronic devices in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.28-28
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• 2009

Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.331-331
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• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.193-197
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• 2004

The organic light emitting diode (OLED) is proposed as the novel source in the microchip because it has ideal merits (various wavelengths, thin-film structure and overall emitting) for the integration. In this paper, we fabricated the finger-type pin photodiodes for fluorescence detection and the advanced microchip with OLED integrated pn the microchannel. The finger-type in the diode design extended the depletion region and reduced the internal resistance about 31.2% than rectangular-type. The photodiodes had a 100pA leakage current and a 8720 sensitivity $(I_{Light}/I_{Dark})$ at -1 V bias. The interference filter with 32 layers ($SiO_2$, $TiO_2$) was directly deposited on the photodiode. The OLED was fabricated on the ITO coated glass and was bonded with LOC. The application of thin-film OLED increased the excitation efficiency and simplified the integration process extremely. The prototype device of this application had a superior sensitivity of 100nM-LOD in the fluorescence detection.

• Journal of Electrochemical Science and Technology
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• v.11 no.2
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• pp.148-154
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• 2020

Highly ordered mesoporous manganese oxide films were electrodeposited onto indium tin oxide coated (ITO) glass using sodium dodecyl sulfate (SDS) and ethylene glycol (EG) which were used as a templating agent and stabilizer for the formation of micelle, respectively. The manganese oxide films synthesized with surfactant templating exhibited a highly mesoporous structure with a long-range order, which was confirmed by SAXRD and TEM analysis. The unique porous structure offers a more favorable diffusion pathway for electrolyte transportation and excellent ionic conductivity. Among the synthesized samples, Mn₂O₃-SDS+EG exhibited the best electrochemical performance for a supercapacitor in the wide range of scan rate, which was attributed to the well-developed mesoporous structure. The Mn₂O₃ prepared with SDS and EG displayed an outstanding capacitance of 72.04 F g^-1, which outperform non-porous Mn₂O₃ (32.13 F g^-1) at a scan rate of 10 mV s^-1.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.127-127
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• 2011

We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.430-430
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• 2007

In this study, the nematic liquid crystal (NLC) alignment effects treated on the ZnO thin film layers using ion beam irradiation were successfully studied for the first time. The ZnO thin films were deposited on indium-tin-oxide (ITO) coated glass substrates by rf-sputter and The ZnO thin films were deposited at the three kinds of rf power. The used DuoPIGatron type ion beam system, which can be advantageous in a large area with high density plasma generation. The ion beam parameters were as follows: energy of 1800 eV, exposure time of 1 min and ion beam current of $4\;mA/cm^2$ at exposure angles of $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, and $60^{\circ}$. The homogeneous and homeotropic LC aligning capabilities treated on the ZnO thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be achieved. The low pretilt angle for a NLC treated on the ZnO thin film surface with ion beam irradiation for all incident angles was measured. The good LC alignment treated on the ZnO thin film with ion beam exposure at rf power of 150 W can be measure. For identifying surfaces topography of the ZnO thin films, atomic force microscopy (AFM) was introduced. After ion beam irradiation, test samples were fabricated in an anti-parallel configuration with a cell gap of $60{\mu}m$.