• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.69-72
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• 2005

ITO-Al-ITO multi-layers were deposited at room temperature by RF magnetron sputtering on polyethylene terephthalate (PET). The films were deposited at various pressures of $8\times10^{-4},\;1\times10^{-3},\;4\times10^{-3},\;8\times10^{-3}\;and\;1\times10^{-2}$ Torr. A correlation between microstructure and electro-optical properties was studied. Films deposited? at low pressure have higher transmission, and lower reflectance and resistance than film deposited at high pressure. Sheet resistance, transmission, and reflectance were $141.6\Omega/\Box\;88\%\;and\;6.8\%$ resectively when the deposition pressure was $8\times10^{-4}$ torr, that was the optimum condition.

• Journal of the Korean institute of surface engineering
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• v.42 no.6
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• pp.276-279
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• 2009

ITO and ITO:Ce films were deposited by DC magnetron sputtering using an ITO ($SnO_2$: 10 wt%) and $CeO_2$ doped ITO ($CeO_2$: 0.5, 3.0, 4.0 and 6.0 wt%) ceramic targets, respectively, on unheated polyethylene terephthalate (PET) substrates. The lowest resistivity $6.7{\times}10^{-4}{\Omega}cm$ was obtained from ITO:Ce film deposited using $CeO_2$ (3.0 wt%) doped ITO target. On hte other hand, ITO:Ce (0.5wt%) film has the excellent mechanical durability which was evaluated by bending test. This result was attributed to the higher binding energy of $CeO_2$ compared to $SnO_2$ and $In_2O_3$. Therefore, $CeO_2$ atoms have a small displacement caused by the bombardment of high energy particles, and it attribute to the increase in adhesion caused by decrease in internal stress. The average transmittance of the films was more than 80% in the visible region.

• Journal of Information Display
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• v.2 no.1
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• pp.38-42
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• 2001

Thin films of $In_2O_3-SnO_2$(ITO), $SnO_2$, and $SiO_2$ were prepared on the PET substrate by DC magnetron roll sputtering. 135 nm thick ITO film on $SiO_2$/PET substrate has sheet resistance as low as 55 ${\Omega}/square$ and transmittance as high as 85%. $H_2O$gas permeation through the film was 0.35 g/$m^2$ in a day. These properties are enough on optical film for the plastic LCD substrate or touch panel. Both refractive index and sheet resistance of ITO was found to be very sensitive to $O_2$ flow rate. Oxygen flow conditions have been optimized from 4 to 5 SCCM at $10^{-3}$torr. It is also shown that both thickness of $SnO_2$ and refractive index of $SiO_2$ decrease as $O_2$ flow rate increases.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.55-59
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• 2005

ITO/Ni/ITO thin films were deposited on the PET by RF magnetron sputtering. Dependance of the process parameters such as deposition pressure, positions of Ni layer, on the transmittance, reflectance and sheet resistance of ITO/Ni/ITO film were investigated. When the Ni layer is placed at the center of ITO and deposition pressure is low, ITO/Ni/ITO films showed better optical and electrical properties. At these conditions, the transmittance, reflectance and sheet resistance of the ITO film were $90\%,\;0.38\%$ and $185\Omega/\Box$ respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.813-820
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• 2015

We have studied commercialization and process optimization of protective film on transparent conductive coated substrate, nano silver on flexible PET (poly ethylene terephthalate), by means of roll-to-roll micro-gravure coater. Nanosilver on flexible PET substrate is potential materials to replace ITO (indium tin oxide). Protective film is most important to maintain unique silver pattern on top of transparent PET. PSA pressure sensitive adhesives) was developed solely for nano silver on PET and protective film was successfully laminated. We have optimized all process conditions such as coating thickness, line speed and aging time & temperature via experimental design. Transparent conductive film and its protective film developed in this research are commercially available at this moment.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.213-213
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• 1999

현재 LCD용 기판재료는 ITO/glass를 전극으로 사용하고 있다. 그러나 유리기판은 무겁고 깨지기 쉽기 때문에 사용상 곤란한 점이 많다. 최근 flexible하고 가공성 및 생산성이 우수한 플라스틱한 ITO를 성막하여 EL용, Touch panel, plastic LCD용 사용하려는 시도로, roll-to-roll 연속 스퍼터링에 의한 ITO성막공정에 대한 연구가 최근 활발하게 이루어지고 있다. 폴리머는 유리에 비해 Tg 온도가 낮고, 기판으로부터의 수분 및 여러 종류의 가스방출이 심하기 때문에 유리와는 달리 ITO막의 제조에 있어 큰 차이점이 있다. 따라서, 폴리머에 반응성 스퍼터링을 하기 위해서는 표면처리가 중요한 변수가 되며, roll to roll sputter로 ITO 필름을 얻기 위해서는 폭과 길이 방향으로 균일한 막을 얻는 것이 중요하다. 두께 75$\mu\textrm{m}$, 폭 190mm, 길이 400m로 권취된 광학용 Polyethylene terephthalate(PET:Tg:8$0^{\circ}C$)위에 In-10%Sn의 합금타겟과 Unipolar pulsed DC power supply를 사용하여 반응성 마그네트론 스퍼터링 방법으로 0.2m/min의 속도로 연속 스퍼터링 하였다. PET를 Ar/O2 혼합가스로 플라즈마 전처리를 한 후, AFM, XPS를 이용하여 효과를 분석을 하였고, 성막전에 가스방출을 막기 위해 TiO를 코팅하였다. Pilot 연속 생산공정에서 재현성을 위해 PEM(Plasma Emission Monitor)의 optical emission spectroscopy를 이용, 금속과 산화물의 천이구역에서 sprtter된 I/Sn 이온과 산소 이온의 반응에 의한 최적의 플라즈마의 강도값을 입력하여 플라즈마의 radiation을 검출하고, 스퍼터링 공정중 실질적인 in-situ 정보로 이용하였다. PEM을 통하여 In/Sn의 플라즈마 강도변화를 조사하였다. 초기 In/Sn의 플라즈마 강도(intensity)는 강도를 100하여, 산소를 주입한 결과, plasma intensity가 35 줄어들었고, 이때 우수한 ITO 박막을 얻을 수 있었다. Pulsed DC power를 사용하여 아크 현상을 방지하였다. PET 상에 coating 된 ITO 박막의 표면저항과 광투과도는 4-point prove와 spectrophotometer를 이용하여 분석하였고, AES로 박막의 두께에 따른 성분비를 확인하였다. ITO 박막의 광투과도는 산소의 유량과 sputter 된 In/Sn ion의 plasma emission peak에 따라 72%-92%까지 변화하였으며, 저항은 37$\Omega$/$\square$ 이상을 나타내었다. 박막의 Sn/In atomic ratio는 0.12, O/In의 비율은 In2O3의 화학양론적 비율인 1.5보다 작은 1.3을 나타내었다.

• Korean Journal of Materials Research
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• v.17 no.10
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• pp.516-520
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• 2007

Indium tin oxide, which is used as transparent conducting layer in flexible device, is deposited on PET film by a magnetron sputtering in 300 mm wide roll-to-roll process (vacuum web coating). Sheet resistance, specific resistance and transmittance is differed by sputtering parameters such as working pressures, oxygen partial pressure, and thickness of ITO layer. ITO layer is deposited about 90 nm at roll speed of 0.24 m/min and its sputtering power is 3 kW. From the XRD spectrum deposited ITO layer is verified as amorphous. Under working pressure varied from $3{\times}10^{-4}\;Torr$ to $2{\times}10^{-3}\;Torr$, sheet resistance is lowest at the working pressure of $1{\times}10^{-3}\;Torr$ and its value is from $110\;{\Omega}/{\square}$ to $260\;{\Omega}/{\square}$ at the thickness of 90 nm. Oxygen partial pressure also varies sheet resistance and is optimized at the regime from 0.2% ($1.8{\times}10^{-6}\;Torr$) to 0.6% ($6{\times}10^{-6}\;Torr$). In this oxygen partial pressure sheet resistance is lower than $150\;{\Omega}/{\square}$. As ITO layer thickness increases, sheet resistance decreases down to $21\;{\Omega}/{\square}$ and specific resistance is about $7.5{\times}10.4{\Omega}cm$ in 340 nm thickness ITO layer. Transmittance is measured at the wavelength of 550 nm and is about 90% for 180 nm thickness ITO/PET.

• Transactions on Electrical and Electronic Materials
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• v.1 no.2
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• pp.23-27
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• 2000

Indium in oxide(ITO) films have been deposited on PET and glass substrates by DC reactive magnetron sputtering without post-deposition thermal treatment, The high quality for microstructure, electrical and optical properties of the as-deposited ITO films on unheated substrates is dominated by the sputtering parameters, The influence of the working gas pressure, DC power and oxygen partial pressure has been systematically investigated, The lowest DC power, and oxygen partial pressure has been systematically investigated, The lowest resistivity of ITO films deposited on PET substrates was 6$\times$10$^{-4}$ $\Omega$cm. It has been obtained at a working pressure of 3 mTorr and DC power of 30 W. The sheet resistance and optical transmittance of these film were 22 $\Omega$/square and 84% respectively. The best values of figures of merit for the electrical and optical characteristics such as T/ $R_{sh}$ and $T^{10}$ / $R_{sh}$ are approximately 38.1 and 7.95($\times$10$^{-3}$ $\Omega$$^{-1}$ ), respectively.

• Journal of the Korean institute of surface engineering
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• v.41 no.5
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• pp.214-219
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• 2008

Indium tin oxide (ITO) films were deposited on PET substrate by RF superimposed DC magnetron sputtering using ITO (doped with 10 wt% $SnO_2$) target. Substrate temperature was maintained below $750^{\circ}C$ without intentionally substrate heating during the deposition. The discharge voltage of DC power supply was decreased from 280 V to 100 V when superimposed RF power was increased from 0 W to 150 W. The electrical properties of the ITO films were improved with increasing of superimposed RF power. In the result of cyclic bending test, relatively high mechanical property was obtained for the ITO film deposited with RF power of 75 W under DC current of 0.75 A which could be attributed to the decrease of internal stress caused by decrease in both deposition rate and plasma impedance.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.205-211
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• 2012

We investigated the optical and hydrophobic properties of the deposited silver (Ag) zinc oxide (ZnO) nanorods (NRs) on flexible indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates (i.e., ITO/PET). The ZnO NRs were grown by an electrochemical deposition using a sputtered ZnO seed layer and the Ag was deposited by using a thermal evaporator. For comparison, the same fabrication process was carried out on the bare ITO/PET without ZnO NRAs. Due to the discrete surface of ZnO NRs, the deposited Ag was formed as nano-scale particles, while the Ag became film-like for bare ITO/PET. In order to control the size and amount of Ag particles, the Ag deposition time was changed from 100 to 600 s. When the deposition time was increased, the Ag particles became larger and denser, and the absorptance was increased. This enhanced absorptance may be due to the localized surface plasmon resonance of Ag particles. Furthermore, the relatively high hydrophobicity was observed for the deposited Ag on the ZnO NRs/ITO/PET. These improved optical and surface properties are expected to be useful for flexible photovoltaic and optoelectronic devices.