• Title/Summary/Keyword: ITO thickness

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Thin Films for Environmental Application and Energy Devices

  • Kim, Young-Dok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.91-91
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    • 2012
  • We aim in synthesizing various functional thin films thinner than ~ 10 nm for environmental applications and photovoltaic devices. Atomic layer deposition is used for synthesizing inorganic thin films with a precise control of the film thickness. Several examples about application of our thin films for removing volatile organic compounds (VOC) will be highlighted, which are summarized in the below. 1) $TiO_2$ thin films prepared by ALD at low temperature ($<100^{\circ}C$) show high adsorption capacity for toluene. In combination with nanostructured templates, $TiO_2$ thin films can be used as building-block of high-performing VOC filter. 2) $TiO_2$ thin films on carbon fibers and nanodiamonds annealed at high temperatures are active for photocatalytic oxidation of VOCs, i.e. photocatalytic filter can be created by atomic layer deposition. 3) NiO can catalyze oxidation of toluene to $CO_2$ and $H_2O$ at $<300^{\circ}C$. $TiO_2$ thin films on NiO can reduce poisoning of NiO surfaces by reaction intermediates below $200^{\circ}C$. We also fabricated inverted organic solar cell based on ZnO electron collecting layers on ITO. $TiO_2$ thin films with a mean diameter less than 3 nm on ZnO can enhance photovoltaic performance by reducing electron-hole recombination on ZnO surfaces.

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Characterization of Thin Film Materials by Nanoindentation and Scanning Probe Microscopy (나노인덴테이션과 주사탐침현미경을 이용한 박막 재료의 특성평가)

  • Kim, Bong-seob;Yun, Jon-do;Kim, Jong-kuk
    • Korean Journal of Materials Research
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    • v.13 no.9
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    • pp.606-612
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    • 2003
  • Surface and mechanical properties of thin films with submicron thickness was characterized by nanoindentation with Berkovich and Vickers tips, and scanning probe microscopy. Nanoindention was made in a depth range of 15 to 200 nm from the surface by applying tiny force in a range from 150 to $9,000 \mu$N. Stiffness, contact area, hardness, and elastic modulus were determined from the force-displacement curve obtained. Reliability was first tested by using fused quartz, a standard sample. Elastic modulus and hardness values of fused quartz measured were the same as those reported in the literature within two percent of error. Mechanical properties of ITO thin film were characterized in a depth range of 15∼200nm. As indentation depth increased, elastic modulus and hardness decreased by substrate effect. Ion beam deposited DLC thin films were indented in a depth range of 40∼50 nm. The results showed that the DLC thin film using benzene and bias voltage 0∼-50 V has elastic modulus and hardness value of 132 and 18 GPa respectively. Pure DLC thin films showed roughnesses lower than 0.25 nm, but silicon-added DLC thin films showed much higher roughness values, and the wavy surface morphology.

DC Magnetron Sputtering of Cr/Cu/Cr Metal Electrodes for AC Plasma Display panel (DC Magnetron Sputtering 법에 의한 AC Plasma Display panel의 Cr/Cu/Cr 금속전극 제조)

  • 남대현;이경우;박종완
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.8
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    • pp.704-710
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    • 2000
  • Metal electrode materials for plasma display panel should have low electrical resistivity in order to maintain stable gas discharge and have fast response time. They should also hae good film uniformity adhesion and thermal stability. In this study Cr/Cu/Cr metal electrode structure is formed by DC magnetron sputtering. Cr and Cu films were deposited on ITO coated glasses with various DC power density and main pressures as the major parameters. After metal electrodes were formed a heat treatment was followed at 55$0^{\circ}C$ for 20 min in a vacuum furnace. The intrinsic stress of the sputtered Cr film passed a tensile stress maximum decreased and then became compressive with further increasing DC power density. Also with increasing the main pressure stress turned from compression to tension. After heat the treatment the electrical resistivity of the sputtered Cu film of 2${\mu}{\textrm}{m}$ in thickness prepared at 1 motor with the applied power density of 3.70 W/cm$^2$was 2.68 $\mu$$\Omega$.cm With increasing the main pressure the DC magnetron sputtered Cu film became more open structure. The heat treatment decreased the surface roughness of the sputtered Cr/Cu/Cr metal electrodes.

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Dependence of Blue Organic Emitter Layer Thickness to Optical Property of 2-wavelength White Organic Light-emitting Diodes (청색 유기발광층 두께에 따른 2-파장 방식의 백색 유기발광 소자의 광학적 특성)

  • Park, Chan-Jun;Cho, Nam-Ihn;Song, Young-Wook
    • Journal of Institute of Control, Robotics and Systems
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    • v.14 no.6
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    • pp.511-514
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    • 2008
  • 2-wavelength type white OLED devices have been made consisted of two layers; a layer with blue light emitting DPVBi host and other EML layer with yellow emitting rubrene dopant. New method to get white emitting device has been suggested by varying thicknesses of the DPVBi layer. The ITO/2-TNATA($150{\AA}$)/NPB($350{\AA}$)/DPVBi($35{\AA}$)/DPVBi:rubrene (2wt%,$200{\AA}$)/DPVBi($100{\AA}$)/Alq_3($50{\AA}$)/LiF($5{\AA}$)/Al($1000{\AA}$) structure has showed optimum results in CIE coordinates of (0.3233, 0.33). OLED devices with this structure has properties of $1.2d/m^2$ at turn-on voltage of 3.9V and $1037cd/m^2$ at 7.9V. This structure has advantages of simple fabrication and easy to emit the white color.

Properties of the Exciton Blocking Layer in Organic Photovoltaic cell (유기 광기전력 소자의 엑시톤 억제층 특성)

  • Oh, Hyun-Seok;Lee, Ho-Shik;Park, Yong-Phil;Lee, Won-Jae;Kim, Tae-Wan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04b
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    • pp.20-21
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    • 2008
  • Photovoltaic effects in organic solar cell were studied in a cell configuration of ITO/PEDOT:PSS/CuPd(20nm)/$C_{60}$(40nm)/BCP/Al(150nm) at room temperature. Here, the BCP layer works as an exciton blocking layer. The exciton blocking layer must transport electrons from the acceptor layer to the metal cathode with minimal increase in the total cell series resistance and should absorb damage during cathode deposition. Therefore, a proper thickness of the exciton blocking layer is required for an optimized photovoltaic cell. Several thicknesses of BCP were made between $C_{60}$ and Al. And we obtained characteristic parameters such as short-circuit current, open-circuit voltage, and power conversion efficiency of the device under the illumination of AM 1.5.

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Phenotypic Alterations in Transgenic Tobacco Plants that Overproduce Cytokinins (Cytokinins overproduction에 따른 담배형질전환체의 변화)

  • Chung, Yong-Yoon
    • The Journal of Natural Sciences
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    • v.10 no.1
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    • pp.33-37
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    • 1998
  • Cytokinin is one of major growth regulators in plants. In this study, the gene isopentenyl transferase (jpt) which encodes a key enzyme involved in the biosynthesis of the growth regulator cytokinin isolated from Agrobacterium tumefaciens was introduced ito tobacco plant via Agrobacterium-mediated transformation. The jpt gene was modulated using the proteinase inhibitor II (PI-IIK) promotor. In general, this promoterlipt gene fusion resulted in overproduction of cytokinins throughout the transgenic plants. The overproduction of cytokinin caused dramatic changes in morphology of the plant, including stem thickness and reduced root development. The studies reported in this paper were initiated to examine the consequences of overproduction of cytokinin in plant.

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Efficient Organic Light-emitting Diodes using Hole-injection Buffer Layer

  • Chung, Dong-Hoe;Kim, Sang-Keol;Lee, Joon-Yng;Hong, Jin-Woong;Cho, Hyun-Nam;Kim, Young-Sik;Kim, Tae-Wan
    • Journal of Information Display
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    • v.4 no.1
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    • pp.29-33
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    • 2003
  • We have investigated the effects of hole-injection buffer layer in organic light-emitting diodes using copper phthalocyanine (CuPc), poly(vinylcarbazole)(PVK), and Poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT: PSS) in a device structure of $ITO/bufferr/TPD/Alq_3/Al$. Polymer PVK and PEDOT:PSS buffer layer were produced using the spin casting method where as the CuPc layer was produced using thermal evaporation. Current-voltage characteristics, luminance-voltage characteristics and efficiency of device were measured at room temperature at various a thickness of the buffer layer. We observed an improvement in the external quantum efficiency by a factor of two, four, and two and half when the CuPc, PVK, and PEDOT:PSS buffer layer were used, respectively. The enhancement of the efficiency is assumed to be attributed to the improved balance of holes and elelctrons resulting from the use of hole-injection buffer layer. The CuPc and PEDOT:PSS layer function as a hole-injection supporter and the PVK layer as a hole-blocking one.

Fabrications of Silver Nanowire/NiO Based High Thermal-Resistance Hybrid Transparent Electrode (은나노선/Ni 산화물 고내열성 하이브리드 투명전극의 형성)

  • Jung, Sunghoon;Lee, Seunghun;Kim, Do-Geun
    • Journal of Surface Science and Engineering
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    • v.50 no.6
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    • pp.486-491
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    • 2017
  • Silver nanowire (AgNW) transparent electrode is one of next generations of flexible and transparent electrode. The electrode shows high conductivity and high transparency comparable to ITO. However, the electrode is weak against heat. The wires are separated into nanodots at temperature above $200^{\circ}C$. It causes the electrical resistance increase. Moreover, it is vulnerable to oxygen and moisture in the atmosphere. The improvement of thermal and moisture resistance of silver nanowire transparent electrode is the most important for commercializing. We proposed silver nanowires transparent electrode which is capped with very thin nickel oxide layer. The nickel oxide layer is five nanometers of thickness, but the heat and moisture resistance of the transparent electrode is effectively improved. The AgNW/NiO electrode can endure at $300^{\circ}C$ of temperature for 30 minutes, and resistance is not increased for 180 hours at $85^{\circ}C$ of temperature and 85% of relative humidity. We showed an applications of transparent and flexible heater using the electrode, the heater is operated more than $180^{\circ}C$ of temperature.

Impedance Properties of Frequency with the Thickness Variation of Hole Transport Layer and Emitting Layer (정공 수송층과 발광층의 두께 변화에 따른 주파수의 임피던스 특성)

  • Kim, Weon-Jong;Lee, Young-Hwan;Yang, Jae-Hoon;Lee, Jong-Yong;Shim, Nak-Soon;Kim, Tae-Wan;Hong, Jin-Woong
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.2040-2042
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    • 2005
  • ITO/N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine(TPD)/Tris(8-hydroxyquinolinato Aluminum $(Alq_3)/Al$ 구조에서 정공 수송층 TPD와 발광충 $Alq_3$를 각각 두께 변화에 따라 Agilent 4294A, Precision Impedance Analyzer를 이용하여 주파수에 의존하는 저항성 특성과 용량성 특성을 연구하였다. 측정 결과 주파수가 증가할수록 저항성 특성은 감소함을 보였고 용량성 특성은 감소하다가 다시 증가하는 특성을 보였다. TPD와 $Alq_3$의 두께가 각각 70[nm], 30[nm]일 때 저주파 영역에서는 가장 낮은 저항성 특성이 보이다가 고주파 영역에서는 가장 높은 특성을 확인하였다. 또한 용량성 특성은 저주파 영역에서는 가장 높은 특성이 보이다가 고주파영역에서 두께 변화에 상관없이 거의 일치함을 확인하였다.

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Emission Characteristics of Red OLEDs in the Emitting Layer Position Doped with DCM2 and Rubrene (DCM2와 Rubrene이 첨가된 발광층 위치에 따른 적색 OLED의 발광 특성)

  • Jung, Haeng-Yun;Gu, Hal-Bon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.8
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    • pp.664-668
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    • 2011
  • In this study, we have fabricated the red OLED (organic light emitting diode). The basic device structure is ITO/hole transporting layer, TPD(500 $\AA$)/red emitting layer, Alq3 doped with DCM2:rubrene(20 $\AA$)/electron transporting layer, Alq3(M) (500 $\AA$-M $\AA$)/LiF(15 $\AA$)/Al(1,000 $\AA$). The thickness of electron transporting layer(500 $\AA$-M $\AA$) changed 0, 20, 40, 60 $\AA$. Turn on voltage of the red OLED was 5 V, 6 V, 6.5 V and 7.5 V, respectively with electron transfer layer changed ratio. Luminance of red OLED was 4,504, 1,840, 1,490 and 1,130 cd/$m^2$, respectively. Optimized electron transfer layer position changed ratio of the red OLED was 0 $\AA$.