• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.12
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• pp.2240-2244
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• 2010

We have studied white OLED using two types of Zn-complexes as a emitting layer. We synthesized new emissive materials $Zn(HPQ)_2$ as a yellow emitting material and $Zn(HPB)_2$ as a blue emitting material. Zn-complexes have a low molecular compound and thermal stability. The fundamental structures of the fabricated OLED was ITO / NPB (40nm) / $Zn(HPB)_2$ (30nm) / $Zn(HPQ)_2$ / LiF / Al. We varied the thickness of the $Zn(HPQ)_2$ layer 20, 30 40 nm. When the thickness of the $Zn(HPQ)_2$ layer was 20 nm, white emission was achieved. The maximum luminance was 12,000 cd/$m^2$ at a current density of 800 mA/$cm^2$. The CIE coordinates of the white emission was (0.319. 0.338) at an applied voltage of 10 V.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1236_1237
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• 2009

Organic light emitting diode (OLED) is currently the focus of intense interest in the field of photonics. It is attractive for the in low-operating voltage, low power consumption, easy fabrication and low cost. A typical OLED consists of one or more organic layers sandwiched between a high work function anode, such as indium tin oxide (ITO), and a low work function cathode such as Ca, Mg:Ag, and Al. Tris-(8-hydroxy)quinolinealuminum ($Alq_3$) has taken a prominent position in the development of OLED due to its relative stability as an electron transporting and emitting material. We investigated an efficiency improvement of the OLED depending on thickness variation of $Alq_3$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1103-1107
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• 2007

Highly efficient organic electroluminescent devices (OLEDs) based on 4,7- diphenyl-1, 10- phenanthroline (BPhen) as the electron transport layer (ETL), tris (8-hydroxyquinoline) aluminum ($Alq_3$) as the emission layer (EML) and N,$\acute{N}$-bis-[1-naphthy(-N,$\acute{N}$diphenyl-1,1´-biphenyl-4,4´-diamine)] (NPB) as the hole transport layer (HTL) were developed. The typical device structure was glass substrate/ ITO/ NPB/$Alq_3$/ BPhen/ LiF/ Al. Since BPhen possesses a considerable high electron mobility of $5\;{\times}\;10^{-4}\;cm^2\;V^{-1}\;s^{-1}$, devices with BPhen as ETL can realize an extremely high luminous efficiency. By optimizing the thickness of both HTL and ETL, we obtained a highly efficient OLED with a current efficiency of 6.80 cd/A and luminance of $1361\;cd/m^2$ at a current density of $20\;mA/cm^2$. This dramatic improvement in the current efficiency has been explained on the principle of charge balance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.939-942
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• 2001

We fabricated Red Organic light-emitting devices(OLED). The Basic Device Structure is ITO/hole transfer layer, TPD(50nm)/red emitting layer, Alq3 doped with DCM2 or DCM2:rubrene(xnm)/electorn transfer layer, Alq3(50-xnm)/LiF(0.8nm)/Al(8nm) . The thickness of emitting layer(xnm) changed 5, 10, 20nm. we demonstrate red emitting OLED with dependent on the thickness and concentrators of Alq3 layer doped with DCM2 or co-doped with DCM2:ruberene. The Emission color and Brightness are changed with doping or co-doping condition, dopant concentarton. In the case of rubrene:DCM2 co-doped layer structure, the red color Purity and device efficiency is improved. The CIE index of rubrene co-doped OLED is x=0.67, y=0.31. By co-doping the Alq3 layer with DCM2, rubrene, EL efficiency improved from 0.38cd/A to 0.44cd/A in comparison whit DCM2 doped Alq3 layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.734-738
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• 2003

The addressing time should be reduced by modifying cell and/or driving method in order to replace the dual scan system by single scan and increase the luminance in large ac plasma display panel(PDP). In this paper, the relationships between of discharge cell structure and addressing time in ac PDP are investigated. It is found out that the addressing time was decreased with decreasing gap of ITO electrode and thickness of transparence dielectric layer on the front glass. The decrease rates were 4% per $10{\mu}m$ and 4% per $5{\mu}m$, respectively. Also in cases of decreasing height of barrier rip and thickness of white dielectric layer on the rear glass, addressing times were at the rate of 4% per $10{\mu}m$ and 4% per $2{\mu}m$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.940-943
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• 2003

We report the fabrication and the characterization of white organic light-emitting devices consisting of a red-emitting layer of a new DCM derivative doped into 4,4'bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (${\alpha}-NPD$) and a blue-emitting layer of 1,4-bis(2,2-diphenyl vinyl)benzene (DPVBi). The device structure is ITO/PEDOT:PSS/${\alpha}-NPD$ (50 nm)/${\alpha}-NPD$:DCM (5 nm, 0.2 %)/DPVBi (x)/Alq3 (40 nm)/LiF (0.5 nm)/Al. The electroluminescence (EL) spectra consist of two broad peaks around 470 nm and 580 nm with the spectral emission depending on the thickness of DPVBi. The device with the DPVBi thickness of about 20 nm show a white light-emission with the Commission Internationale d'Eclairage(CIE) chromaticity coordinates of (0.33, 0.36). The external quantum efficiency is 2.6% and luminous efficiency is 2.0 lm/W at a luminance of 100 $cd/m^{2}$. The maximum luminance is about 30,270 $cd/m^{2}$ at 13.9 V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.7
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• pp.1391-1396
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• 2012

It is introduced an approach to model for numerical analysis of a sound absorbing material that has different absorbing coefficient according to frequency. For modeling of a sound absorbing material, we tried to model by a traditional modeling method. But it had large differences on frequency domain, especially a capacitance component due to increasing of frequency. We approach to model a sound absorbing material by the Debye polarization technique with non-linear least square method. At first, we estimated parameters form a polyurethane with thickness 25 mm, then we could model a polyurethane with thickness 50 mm using same parameters. Therefor, we could find that the Debye polarization is an useful way to model sound absorbing materials.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1575-1577
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• 2002

In this study, multi layer type OLED(Organic Light Emitting Diode) has been fabricated using $Snq_2$, $Snq_4$, and $Alq_3$ for development of high efficiency, electrical and optical properties of multi layer type OLED investigated. The HTL(Hole Transfer Layer) and EML(Emitting Material Layer) were fabricated by using vacuum evaporation on ITO electrode, and its thickness controlled using thickness monitor. Al was used as a cathode. The electrical and optical properties such as J-V, brightness-V and EL spectrum of OLED device was measured using I.V.L.T system. The result, brightness of $Alq_3$, $Snq_2$ and $Snq_4$ were $3900cd/m^2$, $63cd/m^2$ and $23cd/m^2$ respectively.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.962-964
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• 1999

We studied emitting properties of devices fabricated using the spin-coating and Langmuir-Blodgett[LB] technique. The LB technique has the advantage of precise control of the thickness better than spin-coating method. Poly(3-hexylthiophene)[P3HT] LB films used as the emitting layer in light-emitting devices. LB monolayers were deposited 27 layers onto the indium-tin-oxide[ITO] as Y-type films by the vertical dipping method. The thickness is about 80nm. Absorption spectrum of LB films presented that P3HT is regiorandom conformation. Also, current-voltage-luminance characteristics and electroluminescence spectra of light-emitting devices fabricated by LB method is studied. In current-voltage-luminescence characteristics, turn-on voltage of P3HT LB film LEDs is higher than that of spin-coating LEDs. But electroluminescence spectrum is similar to the spin-coating LEDs. The orange-red light was clearly visible in a darkened room.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.616-621
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• 2003

The white-light-emitting organic LED with two-wavelength was fabricated using blue emitting material(DPVBi) and a series of orange color fluorescent dye(Rubrene) by vacuum evaporation processes. The basic structure of white-light-emitting OLED was ITO/NPB(150$\AA$)/DPVBi(150$\AA$)/Alq$_3$:Rubrene(150$\AA$)/BCP(100$\AA$)/Alq$_3$(150$\AA$)/Al(600$\AA$). The changes of the CIE coordiante strongly depended on the doping concentration of Rubrene and the thickness of NPB layer. We obtained the white-light-emitting OLED close to the pure white color light and the CIE coordinate of the device was (0.315, 0.330) at applied voltage of 13V when the doping concentration of Rubrene was 0.5wt% and the thickness of NPB layer is 200$\AA$. At a current of 100mA/$\textrm{cm}^2$, the quantum efficiency was 0.35%.