• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.788-791
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• 2002

Tin doped indium oxide(ITO) films are highly conductive and transparent in the visible region whose property leads to the applications in solar cell, liquid crystal display, thermal heater, and other sensors. This paper investigated ITO films as a transparent conducting films for application of PDP. ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition such as substrate temperature, gas pressure, annealing temperature, and deposition time. We recommend the substrate temperature of $500^{\circ}C$ and post annealing of $200^{\circ}C$ in $O_2$ atmosphere for good conductivity and transmittance. From XRD examination, ITO films showed a preferred(222) orientation. As substrate temperature increased from RT to $500^{\circ}C$, the intensity of the (222) peak increased. The highest peak intensity was observed at a substrate temperature of $500^{\circ}C$. with the optimum growth conditions, ITO films showed resistivity of $1.04{\times}10^{-4}{\Omega}-cm$ and transmittance of 81.2% for a film 300nm thick in the wavelength range of the visible spectrum.

• Bulletin of the Korean Chemical Society
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• v.32 no.4
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• pp.1133-1137
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• 2011

Ordered array of gold nanoparticles (Au NPs) over ITO glass was investigated in terms of ITO pretreatment, particle size, and diamines with different chain length. Owing to the indium-tin-oxide (ITO) layer coated on the glass, the substrate surface has a limited number of hydroxyl groups which can produce functionalized amine groups for Au binding, which resulted in the loosely-packed array of Au NPs on the ITO surface. Diamine ligand as a molecular linker was introduced to enhance the lateral binding of adjacent Au NPs immobilized on the amine-functionalized ITO glass, consequently leading to the densely-packed array of Au NPs over the ITO substrate. The molecular bridging effect was strengthened with the increase of chain length of diamines: C-12 > C-8. The packing density of small Au NPs (< 40 nm) was significantly increased with the increase of C-8 diamine, but large Au NPs (> 60 nm) did not produce densely-packed array on the ITO glass even for the dosage of C-12 diamine.

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.122-125
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• 2004

ITO films were deposited on polyethylene terephthalate substrate by a dc reactive magnetron sputtering using rf bias without substrate heater and post-deposition thermal treatment. The dependency of rf substrate bias on plasma sputter processing was investigated to control energetic particles and improve ITO film properties. The substrate was applied negative rf bias voltage from 0 to -80 V. The composition of indium, tin, and oxygen atoms is strongly depended on the rf substrate bias. Oxygen deficiency is the highest at rf bias of -20 V. The electrical and optical properties of ITO films also are dominated obviously by negative rf bias.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.296-296
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• 2016

ITO films doped with a small amount of high-permittivity materials not only retain the basic properties of ITO films but also improve some of their properties. We report the highly conductive and transparent (ITO:Zr) films with various substrate (RT to 300oC) temperatures on glass substrate for the HIT solar cell applications. We observed a decrease in sheet resistance from 36 to $11.8{\Omega}/{\Box}$ with the increasing substrate temperature from RT to 300oC, respectively. The ITO:Zr films showed also lowest resistivity of $1.38{\times}10-4{\Omega}.cm$ and high mobility of 42.37cm-3, respectively. The surface and grain boundaries are improved with the increase of substrate temperature as shown by SEM and AFM surface morphologies. The highly conductive and transparent ITO:Zr films were employed as front electrode in HIT solar cell and the best performance of device was found to be Voc = 710 mV, Jsc = 33.70 mA/cm2, FF = 0.742, ${\eta}=17.76%$ at the substrate temperature of $200^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.92-92
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• 2011

IZTO and ITO thin films with a thickness of 200nm were deposited on Corning glass substrate to investigate the effects of substrate temperature on their electrical and optical properties by using pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt.%, ZnO 15 wt.%, SnO2 15 wt.%) and ITO (In2O3 90 wt.%, SnO2 10 wt.%). We investigated the structural, electrical, and optical properties of IZTO and ITO films. The structural and electrical properties of both films are sensitive on the substrate temperature. As the substrate temperature is increased, the electrical resistivity of ITO films is improved, but that of IZTO film increase over than $100^{\circ}C$. All IZTO and ITO thin films have good optical properties, which showed an average of transmittance over 80%. As a result, IZTO films can be a possible material for flexible display due to the low processing temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.711-717
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• 1998

BST(70/30) and BST(50/50) thin films were prepared by Sol-Gel method and studied about the microstructural and dielectric properties with Pt and ITO bottom electrodes. The stock solution was synthesized and spin coated on the Pt/Ti$SiO_2$/Si and Indium Tin Oxide(ITO)/ glass substrate. the coated films were dries at 350$^{\circ}C$ for 10 minutes and annealed at $750^{\circ}C$ for 1 hour for the crystallization. The thin films coated on ITO substrate were crystallized easily and the packing density and roughness of surface were better that those of films coated on Pt substrates. In the BST(50/50) composition the structural properties were similar to the BST(70/30) composition and grain size were decreased with increasing the contents of Sr. The dielectric constant was higher in the BST(50/50) composition compared with the BST(70/30) composition. Using the ITO substrate, the dielectric constant was higher than the Pt substrate while the dielectric loss was showed a reverse trend. The dielectric constant with and increase of temperature was decreased slowly.

• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.229-233
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• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.4
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• pp.336-341
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• 2008

Recently, research on a flat panel display(FPD) has focused on organic light-emitting display(OLED) which has wide angle of view, high contrast ratio and low power consumption. ITO(Indium-Tin-Oxide) films are the most widely used material as a transparent electrode of OLED and also in many other display devices like LCD or PDP. The performance and efficiency of OLED is related to the surface condition of ITO coated glass substrate. The typical surface defect of glass substrate is measured for electric characteristics and physical condition for transmittance and roughness. Since ITO coated glass substrate can be destroyed for inspection about surface roughness, sheet resistance, film thickness and transmittance, precise fabrication condition should be made based on the estimated relationship. In this paper, ITO films were prepared on the commercial glass substrate by the Ion-Plating method changing the partial pressure of gas(Ar, 02) and the chamber temperature between $200^{\circ}C$ and $300^{\circ}C$. The characteristics of films were examined by the 4-point probe, supersonic thickness measurement, transmittance measurement and AFM. We estimated the relationship between processing parameters(Ar gas, O2 gas, Temperature) and properties of ITO films (Sheet Resistance, Film Thickness, Transmittance, Surface Roughness).

• Korean Journal of Metals and Materials
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• v.50 no.7
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• pp.545-548
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• 2012

The optical and electronic properties of Indium Tin Oxide (ITO) thin films deposited on a RF-plasma treated glass substrate were investigated by X-Ray Photoelectron Spectroscopy (XPS), Ultra-violet Photoelectron Spectroscopy (UPS), Reflected Electron Energy Loss Spectroscopy (REELS). The modification of glass substrates was carried out by varying the time of the plasma surface treatment in an oxygen atmosphere. The focus of this research was to examine how the optical and electronic properties of ITO thin films change with the plasma treatment time. The surface energy increased since the carbon bonds were removed from the surface after the glass substrate received the surface treatment. The ITO thin films produced on the glass substrate with surface treatment showed that the high optical transmittance was approximately 85%. The measured band gap energy was as high as 3.23 eV when the plasma treatment time was 60 s and the work function after the treatment was increased by 0.5 eV in comparison to that before the treatment of 60 s. The ITO thin film exhibited an excellent sheet resistance of $2.79{\Omega}/{\Box}$. We found that the optical and electronic properties of ITO thin films can be improved by RF-plasma surface treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.185-185
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• 2013

최근 의료 영상 센서는 급속도로 발전을 이룩하여 미세 병변의 위치와 그 크기를 진단하는 데에 많은 이용이 되고 있다. 하지만 기존 flat panel형태의 의료영상 센서는 인체의 굴곡으로 인한 영상 왜곡으로 발전의 한계에 이르고 있는 실정이다. 이 영상 왜곡으로 인한 오진은 환자에게 불필요한 피폭, 수술적 요법, 약물치료 등 환자에게 치명적인 의료사고를 일으킬 수 있다. 이러한 한계를 극복하기 위하여 flexible substrate을 이용한 투명전극들이 의료영상 센서로서의 적용을 연구 되어 졌다. IZO, ITO, FTO 등의 투명전극들 중 Indium Tin Oxide(ITO)는 다른 전극에 비해 높은 투명도와 낮은 저항으로 인하여 다양한 부분에서 널리 이용 되고 있다. 그러나 ITO를 flexible substrate로 적용 시 불충분한 resistivity와 기계적 강도를 지니고 있으며, 유연성을 위해 전극 재료의 두께를 감소시키면 전도성의 문제를 일으키는 단점이 있는 것으로 알려져 있다. 이러한 문제점을 보완 및 해결하기 위하여 본 연구에서는 sputtering magnetron system를 이용하여 polyethylene terephthalate(PET) substrate 위에 ITO을 증착함으로써 전기적 특성을 알아보았다. PET 필름의 크기를 55 절단하였고 증착 온도는 고온에서 수축하는 PET 필름의 물성을 고려하여 $23^{\circ}C$로 설정 하였다. 가스의 분압 비를 Ar는 50ccm으로 고정하고 O2의 비율을 각각 0, 0.2, 0.4, 0.8, 1ccm으로 나눈 후, 비율에 따라 각각 30, 60, 90sec간 sputtering 증착을 하였다. 또한 각각 30, 60, 90sec간 sputtering 증착하여 O2 유량과 sputtering 증착 시간의 변화에 따른 ITO의 전도특성과 유연성에 대한 전도특성을 측정하였다. 유연성을 측정하기 위해선 bending 각도를 각각 $0^{\circ}$ $30^{\circ}$, $45^{\circ}$, $60^{\circ}$로 구부린 후, Two-point probe를 이용하여 변화된 저항을 통해 ITO의 전기적 성질의 변화를 측정 하였다. 측정결과 flexible ITO substrate의 전도특성은 sputtering 증착시간이 증가할수록 저항 값이 낮아지는 것을 확인하였지만, O2 유량이 증가 시 저항이 낮아지다가 다시 증가하는 결과를 알 수 있었다. 본 연구에서는 Ar:O2의 50:0.8의 조건에서 90sec동안 sputtering 증착한 ITO가 131 ${\Omega}/cm^2$의 저항 값이 측정 되었고 다른 조건에서는 164 ${\Omega}/cm^2$에서 4.7 $k{\Omega}/cm^2$까지 저항변화를 가져 Ar:O2의 50:0.8의 조건이 최적화에 좋은 조건이라 판단하였다. 또한 50:0.8의 조건의 ITO의 경우 bending test시에서도 131 ${\Omega}/cm^2$에서 316 ${\Omega}/cm^2$ 정도의 안정적인 저항변화를 가지는 반면 다른 조건에서는 128 ${\Omega}/cm^2$에서 6.63 $k{\Omega}/cm^2$까지의 변화를 나타나 기계적 형상변화에도 분압비가 영향을 주는 것을 확인 할 수 가 있었다. bending 각도에 따른 저항의 변화를 측정하였을 시, 각도 변화에 따라 중심부의 저항 값이 $60^{\circ}$에서 가장 높은 변화가 나타나 전기저항이 높아진 원인을 찾기 위해 Scanning Electron Microscope (SEM)촬영을 한 결과 저항값이 높아짐에 따라 ITO의 압축응력이 작용하는 부근에 Crack이 발생함을 알 수 있었다. 이러한 결과로 flexible ITO substrate의 Crack발생률을 최소화 시키고 bending시 전도성을 유지하기 위해서는 가스의 유량 최적화가 flexible substrate의 기계적형상변화에 대한 ITO의 내구성을 향상시킬 수 있는 해답이 될 것으로 사료된다.