• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.20-24
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• 2015

This study was explained the correlation between the O 1s spectra and the crystallization of ITO thin films. The crystal structure of ITO thin films changed with various annealing temperatures and annealing methods such as atmosphere or vaccum conditions. The amorphous structure observed from XRD pattern showed the O 1s spectra with 531.2 eV, and the crystal structure of annealed ITO films analyzed by XRD pattern had the O 1s spectra of 529.8 eV as lower binding energy then the 531.2 eV. Oxygen in view of ITO films was related to the crystallization, and the ITO films annealed in an atmosphere pressure showed higher crystal structure than the ITO annealed in a vaccum. It was indicated that the amorphous structure had higher binding energy than the crystal structure analyzed by O 1s spectra of ITO films.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.51.1-51.1
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• 2009

나노 임프린트 리소그래피 기술은 마스터 몰드 표면의 나노 패턴을 물리적인 가열, 가압 공정을 통해 기판 위의 고분자 층으로 전사시키는 기술이다. 이 기술은 기존의 노광 기술과는 다르게 직접적인 접촉을 통해 패턴을 형성하기 때문에 기능성 물질의 직접 패턴 형성이 가능한 기술이다. 투명 전극 재료는 다양한 분야으로의 응용이 가능하기 때문에 많은 연구가 진행되고 있다. ITO는 높은 투과율과 전도성 때문에 대표적인 투명 전극 물질로 사용되고 있다. 본 연구에서는 ITO nano particle solution을 이용하여 thermal 임프린팅 공정을 진행해 ITO nano pattern을 형성하는 연구를 진행하였고 이와 같은 기술을 이용하여 glass와 LED 기판에 ITO nano pillar pattern을 제작하였고 이를 주사 전자 현미경과 UV/vis를 이용하여 형성된 나노 ITO 나노 패턴의 구조와 광학적 특성을 분석하였다.

• Korean Journal of Metals and Materials
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• v.46 no.2
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• pp.97-104
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• 2008

Black interlayer was introduced into between ITO and Bus electrodes to enhance a bright room contrast ratio of a plasma display panel. To measure the electrical resistance of the black interlayer, we designed two test patterns, type I and type II, of which type II pattern was successful. Using type II test pattern, the electrical resistance of the black interlayer was measured to be $300{\Omega}$ for $2{\mu}m$ thickness case and infinitely high for 4, $6{\mu}m$ thickness. This result shows that electrical resistance of the black interlayer in the ITO/black interlayer/Bus electrodes structure is a critical parameter which determines the electrical characteristics of the PDP.

• Journal of IKEEE
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• v.20 no.2
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• pp.205-208
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• 2016

In this paper, different types of touch screen silver pastes for bonding in conductive pattern formed over the ito film by bonding each sample of 5 was dried. The dry conditions, the oxidation of the ito film is a condition that does not occur. Reliability testing constant temp and humidity, cold-hot impact test is in progress. Each test will check the status of five sheets conductive pattern bonding. Conductive pattern bonding, after each 240,480,615 hours to check the status of silver pattern bonding. Reliability testing these through different silver pastes can see that the change in the adhesion and conductivity deterioration of the quality can be prevented, and reliability testing low temperature curing from the surface of silver pastes that can come as soon as the discoloration was unknown.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.49-51
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• 2006

OLEOs was fabricated by PLD method. Wet etching process and plasma treatment of ITO on the glass were performed to extend the lifetime of the OLED and increase its brightness. The NPB, $Alq_3$, Li-Benzoate and AI layers on ITO pattern on the glass were deposited by PLO method, sequentially. When the etched ITO was treated by $O_2$ plasma with RF power of 50W, the best result was obtained. The lifetime of the OLED treated by $O_2$ plasma was extended from 3,770sec to 12,586sec compared to that without the plasma treatment.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.2
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• pp.87-91
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• 2011

Single layer Sn doped $In_2O_3$ (ITO) films and ITO 50 nm / Au 10 nm / ITO 40 nm (IAI) multilayer films were prepared with electron beam assisted magnetron sputtering on glass substrates. The effects of the Au interlayer, post-deposition atmosphere annealing and intense electron irradiation on the methanol gas sensitivity were investigated at room temperature. As deposited ITO films did not show any diffraction peaks in the XRD pattern, while the IAI films showed the diffraction peak for $In_2O_3$ (400). In this study, the gas sensitivity of ITO and IAI films increased proportionally with the methanol vapor concentration and an intense electron beam irradiated IAI film shows the higher sensitivity than the others film. From the XRD pattern, it is supposed that increased crystallization promotes the gas sensitivity. This approach is promising in gaining improvement in the performance of IAI gas sensors used for the detection of methanol vapor at room temperature.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.79-84
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• 1999

the photolithographic patterning on an indium-tin oxide (ITO) glass and the electro-phoretic deposition were combined for preparing the screen of the full-color field emission display(FED). the patterns with a pixel of 400$\mu\textrm{m}$ on the ITO-glass were made by etching the ITO with well-prepared etchant consisting of HCL, H2O, and HNO3. Electrophoretic method was carried out in order to deposit each spherical red (R), green(G), and blue (B) phosphor on the patterned ITO-glass. The process parameters such as bias voltage, salt concentration, and deposition time were optimized to achieve clear boundaries. It was found that the etching process of ITO combined with electrophoretic method was cost-effective, provided distinct pattern, and even reduced process steps compared with conventional processes. The application of reverse bias to the dormant electrodes while depositing the phosphors on the stripe pattern was found to be very critical for preventing the cross-contamination of each phosphor in a pixel.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.99-99
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• 1999

투명전도막인 Ito(Indium Tin Oxide)는 flat panel display 와 solar cell 같은 optoelectronic 이나 microelectronic device에서 널리 이용되어 지고 있다. 현재 상용화되고 있는 거의 대부분의 ITO 박막은 sputtering법에 의해 제조되고 있으나 공정상의 이유로 15$0^{\circ}C$이상의 기판온도가 요구되어진다. 그런, 실제 display device 제조공정에서는 비정질 실리콘 박막이나 유기막 위에 ITO박막을 제작할 필요성이 증대되어 지고 있고, 또한 다른 전자소자에 있어서도 상온 ITO 박막 형성 공정에 대한 필요성이 증대되고 있다. 이러한 이유로 본 실험에서는 IBAE(Ion Beam Assisted Evsporation)을 이용하여 저온 ITO박막을 유기막 위에 증착하는 공정에 대한 연구를 수행하였다. 이렇게 증착된 ITO 박막의 결정성은 비정질이었다. 또한, 모든 display device 제작에는 식각공정이 필수인데 기존에 사용되고 있는 wet etching 법은 등방성 식각특성 때문에 미세 pattern 형성에 부적합？, 따라서 비등방성 식각에 용이한 plasma etching법을 사용하여 저온 증착된 ITO 박막의 식각특성을 알아보았다. 실험에 사용된 식각장비는 자장 강화된 유도결합형 플라즈마 식각장비(MEICP)를 사용하였으며, 13.56MHz의 RF power를 사용하였다. 식각조건으로 source power는 600W~1000W, 기판 bias boltage는 -100V~-250V를 가하였으며, Ar, CH4, O2, H2, BCl3의 식각 gases, 5mTorr~30mTorr의 working pressure 변화 그리고 기판 온도에 따른 식각특성을 관찰하였다. ITO 가 증착된 기판으로는 유기물 중 투명전도성 박막에 기판으로서 사용가능성이 클 것으로 기대되어지는 PET(polyethylene-terephtalate), PC(polycarbonate), 아크릴을 사용하여 기판 변화가 식각특성에 미치는 영향에 대해서 각각 관찰하였다. 식각속도의 측정은 stylus profiler를 이용하여 측정하였으며 식각후에 표면상태는 scanning electron spectroscopy(SEM)을 이용하여 관찰하였다.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.6
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• pp.279-283
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• 2012

In is paper, we design and implement the low power, high speed touch screen controller that calculates and outputs the coordinate of touch point on the touch screen of mobile devices. The system clock is 10HMz, the number of input channels is 21, standby current is $20{\mu}A$, dynamic range of input is 140pF~400pF and the response time is 0.1ms/frame. It contains the power management unit for low power, automatic impedance calibration unit in order to adapt to humidity, temperature and evaluation board, adjacent key and pattern interference suppression unit, serial interface unit of I2C and SPI. The function and performance is verified by using FPGA and $0.18{\mu}m$ CMOS standard process. The implemented touch screen is designed for using in the double layer ITO(Indium Thin Oxide) module with diamond pattern and single layer ITO module for cost-effective which are applied to mobile phone or smart remote controller.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.108-110
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• 2009

Transparent Sn-doped $In_2O_3$ (ITO) single-layer and ITO/Au/ITO multilayer films were deposited on glass substrates by reactive magnetron sputtering to compare the properties of the films. They were then annealed in a vacuum of $1{\times}10^{-2}\;Pa$ at temperatures ranging from 150 to $450^{\circ}C$ for 20 min to determine the effect of the annealing temperature on the properties of the films. As-deposited 100 nm thick ITO films exhibit a sheet resistance of $130{\Omega}/{\square}$ and optical transmittance of 77% at a wavelength length of 550 nm. By inserting a 5 nm-thick Au layer in ITO/metal/ITO (IMI) films, the sheet resistance was decreased to as low as $20{\Omega}/{\square}$ and the optical transmittance was decreased to as little as 73% at 550 nm. Post-deposition annealing of ITO/Au/ITO films led to considerably lower electrical resistivity and higher optical transparency. In the Xray diffraction pattern, as-deposited ITO films did not show any diffraction peak, whereas as-deposited ITO/ Au/ITO films have Au (222) and $In_2O_3$ (110) crystal planes. When the annealing temperature reached the 150 - $450^{\circ}C$ range, the both diffraction peak intensities increased significantly. A sheet resistance of $8{\Omega}/{\square}$ and an optical transmittance of 82% were obtained from the ITO/Au/ITO films annealed at $450^{\circ}C$.