• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.371-371
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• 2010

탄소나노튜브(CNT)는 기계적인 특성이 뛰어나며, 화학적으로 안정하고, 전기적으로 도체 및 반도체성을 가지고 있을 뿐만이 아니라 직경이 최소 1nm 수준으로 종횡비 및 비표면적이 매우 큰 특성을 가지고 있다. CNT는 투명전극, 유연성 디스플레이, 전자종이 분야 등 투명 전극 응용 분야에서 ITO 대체 신소재로 각광을 받고 있다. 본 발표에서는 SWCNT 전도막의 특성을 향상시키기 위해 PET 기판에 다양한 전처리 방법을 적용하여 SWCNT의 부착력 및 접착력, 투명전극의 면저항, 투과도 및 균일도 향상을 통해 SWCNT 투명전극 특성향상 연구를 진행했다. 접촉각과 표면에너지 제어를 통한 박막특성과의 상관관계 분석, 전처리 방법에 따른 표면에너지 및 제타포텐셜 변화와 박막특성과의 관계를 규명, Roughness 조절을 통한 기판의 면저항과 투과도 향상, 플라즈마 및 polymer 처리를 통해 물리적, 화학적 기판 전처리에 따른 SWCNT 투명전극 특성 향상을 목적으로 실험을 진행했다. 플라즈마 처리 후 polymer 처리된 박막에서는 친,소수 작용기 양의 변화에 따른 상관관계를 보이지 않았지만, 플리즈마 처리 후 친,소수 작용기 양과 Roughness 변화정도에 대해서는 면저항과 투과도의 변화를 보였다.

• 한국광학회:학술대회논문집
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• 한국광학회 2003년도 하계학술발표회
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• pp.38-39
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• 2003

전기적 저항이 낮은 투명 박막 물질은 현재 flat panel display, electroluminescent device, thin film transistor, solar cell 등 여러 분야에서 연구되고 있다. 그 중에서도 특히 ZnO：Ga는 현재 많이 쓰이는 ITO보다 화학적, 열적으로 안정한 상태를 보이는 투명 전도 산화막 물질로써 본 연구에서는 분광타원법을 이용하여 ZnO：Ga의 광학적 특성을 분석하였다. 본 연구를 위한 시료는 온도에 따른 ZnO：Ga／Sapphire 박막, $O_2$의 압력에 따른 ZnO：Ga／Sapphire 박막, Ga의 doping 농도에 따른 ZnO：Ga／Sapphire 박막으로 제작하였으며, 위상변조형 분광타원계(spectroscopic Phase Modulated Ellipsometer, Jobin-Yvon, UVISEL)를 사용하여 측정대역을 0.74 ~ 4.5 eV, 입사각을 70$^{\circ}$로 하여 측정하였다. (중략)

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.311-311
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• 2009

Carbon nanotubes (CNTs) belong to an ideal material for field emitters because of their superior electrical, mechanical, and chemical properties together with unique geometric features. Several applications of CNTs to field emitters have been demonstrated in electron emission devices such as field emission display (FED), backlight unit (BLU), X-ray source, etc. In this study, we fabricated a CNT cathode by using filtration processes. First, an aqueous CNT solution was prepared by ultrasonically dispersing purified single-walled CNTs (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). The aqueous CNT solution in a milliliter or even several tens of micro-litters was filtered by an alumina membrane through the vacuum filtration, and an ultra-thin CNT film was formed onto the alumina membrane. Thereafter, the alumina membrane was solvated by acetone, and the floating CNT film was easily transferred to indium-tin-oxide (ITO) glass substrate in an area defined as 1 cm with a film mask. The CNT film was subjected to an activation process with an adhesive roller, erecting the CNTs up to serve as electron emitters. In order to measure their luminance characteristics, an ITO-coated glass substrate having phosphor was employed as an anode plate. Our field emitter array (FEA) was fairly transparent unlike conventional FEAs, which enabled light to emit not only through the anode frontside but also through the cathode backside, where luminace on the cathode backside was higher than that on the anode frontside. Futhermore, we added a reflecting metal layer to cathode or anode side to enhance the luminance of light passing through the other side. In one case, the metal layer was formed onto the bottom face of the cathode substrate and reflected the light back so that light passed only through the anode substrate. In the other case, the reflecting layer coated on the anode substrate made all light go only through the cathode substrate. Among the two cases, the latter showed higher luminance than the former. This study will discuss the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the either side.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.961-968
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• 2009

In this work, transparent conductive oxide(TCO) films such as $In_2O_3-SnO_2$(ITO) and $In_2O_3-ZnO$(IZO) were prepared on polyethylene naphthalene(PEN) and glass substrates by using rf-magnetron sputtering system. The TCO films deposited on PEN substrate show very poor conductivity as compared to that of the TCO films deposited on glass substrates. From the results of the residual gas analysis(RGA) test, this poor stability of plastic substrate is presumed to be caused by the deteriorated adhesion between the TCO films and the plastic substrate due to outgassing from the plastic substrate during deposition of TCO films. From our experiment, it is found that the vaporization of some defects in the plastic substrates deteriorate the adhesion of the TCO films to the plastic substrate, because the most plastic substrates containing the water vapor and/or other adsorbed particles such as organic solvents. Mixing of these gases vaporized in the sputtering process will also affect the electrical property of the deposited TCO films. Inorganic thin composite $(SiO_2)_{40}(ZnO)_{60}$ film as a gas barrier layer is coated on the PEN substrate to protecting the diffusion of vapors from the substrate, so that the TCO films with an improved quality can be obtained.

• 한국응용과학기술학회지
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• 제19권1호
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• pp.43-48
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• 2002

We carried out this subject to observe photoisomerization using 1,2-dioleoyl-sn- glycero-3-phosphocholine(DOPC) mixed with fatty acid containing azobenzene group which has reversible to cis-trans by light irradiation. Spreading solutions for the LB films were prepared in chloroform($5.0{\times}10^{-5}$mol/L).We investigated the photoisomerization and property of the organic ultra thin film of fatty acid containing azobenzene was prepared on the hydrophilic ITO(idium tin oxide) glass plate by LB method. As a result, the absorption spectra of 8A5H and DOPC of mixture LB films was induced to photoisomerization by alternating irradiation of ultraviolet and visible light, because the condensation of pure azobenzene monolayers was loosened by the introduction of phospholipid into the monolayers, and the molecular high aggregation in pure azobenzene monolayers is also weakened by the introduction of phospholipid. We found that it was reversibly induced to cis-trans photoisomerization in several solvents and mixture LB films.

• 대한화학회지
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• 제42권6호
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• pp.638-645
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• 1998

아세트산아연으로부터 ITO유리전극위에 열분무법을 이용한 산화아연의 박막을 만들고, 박막 표면의 형태는 SEM으로 조사하였다. 산화아연 박막의 두께는 온도를 증가시키면 약 833 nm까지 증가하다가, 480$^{\circ}C$ 부터는 오히려 감소하는 경향을 나타내었다. 분광 흡광도는 365 nm에서 관측되었고 형광 특성은 475 nm, 505 nm에서 최대의 세기를 나타내었다. 산화아연의 생성은 X선 광전자 분광 스펙트럼으로 확인하였으며, X선 회절 무늬로부터 (002) 면이 기질온도에 따라 우세한 방향으로 성장함을 알 수 있었다. 산화아연의 합성 최적의 온도는 X선 회절 무늬와 광전류의 측정값으로부터 460$^{\circ}C$ 부근임을 확인하였다. 또한 산화아연의 입자의 크기가 균일할수록 광전류가 증가함을 알 수 있있다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.893-896
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• 2003

Plasma polymerized para-xylene (PPpX) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) were used to passivate the organic light emitting diodes (OLEDs). For OLEDs, indium tin oxide (ITO), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD), tris(8-hydroxyquinoline) aluminum $(Alq_{3})$ and aluminum (Al) were used as the anode, the hole transport layer (HTL), the emitting layer (EML) and the cathode, respectively. The OLED device with the PPpX passivation film (passivated device) showed similar electrical and optical characteristics to those of the OLED device without the PPpX passivation film (control device), indicating that the PECVD process did not degrade the performance of the OLEDs notably. The lifetime of the passivated device was two times longer than that of the control device. Passivation of OLEDs with PPpX films also suppressed the growth of dark spots. The density and size of dark spots of the passivated device were much smaller than those of the control device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.601-604
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• 1999

Electroluminescence(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. Recently, many EL researcher have interested a new emissive organic material. In this study, light-emitting organic electroluminescent devices were fabricated using Langmuir-Blodgett(LB) technique with new emissive organic material. This new emissive organic material were synthesis by our teams and we called PECCP [poly(3,6-N-2ethylhexyl carbazoly cyanoterephthalidene)] which has strong electron donor group and electron acceptor group in main chain repeat unit. This material has good solubility in common organic solvent such as chloroform. THF, etc. and has a good stability in air. In here, the new emissive material is applied to Langmuir-Blodgett(LB) method because our new material has a good stability in air. Optimum conditions of film deposition were examined by a surface pressure-area( $\pi$ -A) isotherms with various factors. The LB film were deposited on a indium Tin Oxide(ITO) glass. We were investigated by measuring current-voltage(I-V) characteristics. Also we were measured the UV/visible absorption at about 410nm and PL spectrum at about 530nm. We are attempt to the electroluminescence device properties of the new emissive material by Langmuir-Blodgett(LB) technique.

• 센서학회지
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• 제5권4호
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• pp.71-79
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• 1996

Indium tin oxide(ITO) 전극을 스파터링 법으로 피막시킨 9 MHz 수정진동자를 작용전극으로 사용하여 피롤을 전기화학적으로 중합시키면서, 수정진동자의 공진주파수 변화로 부터 중합량을 분석하고 공진저항의 변화로부터 막의 점탄성 변화를 분석함으로써 중합막의 유변학적 변화를 해석하였다. 본 실험에서 피롤막이 중합될 때 초기에는 탄성막을 형성하다가 점차 점탄성막으로 변화하지만 어느 순간에 다시 탄성막 점탄성막의 변화를 반복함을 확인하였다. 본 연구결과, 수정진동자를 이용하여 전기화학적 중합막의 유변학적 동특성을 중합과정에서 해석할 수 있음을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.193-197
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• 2004

The organic light emitting diode (OLED) is proposed as the novel source in the microchip because it has ideal merits (various wavelengths, thin-film structure and overall emitting) for the integration. In this paper, we fabricated the finger-type pin photodiodes for fluorescence detection and the advanced microchip with OLED integrated pn the microchannel. The finger-type in the diode design extended the depletion region and reduced the internal resistance about 31.2% than rectangular-type. The photodiodes had a 100pA leakage current and a 8720 sensitivity $(I_{Light}/I_{Dark})$ at -1 V bias. The interference filter with 32 layers ($SiO_2$, $TiO_2$) was directly deposited on the photodiode. The OLED was fabricated on the ITO coated glass and was bonded with LOC. The application of thin-film OLED increased the excitation efficiency and simplified the integration process extremely. The prototype device of this application had a superior sensitivity of 100nM-LOD in the fluorescence detection.