• Title/Summary/Keyword: ITO Surface Treatment

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Effect of Thermal Annealing on Nanoscale Thickness and Roughness Control of Gravure Printed Organic Light Emitting for OLED with PVK and $Ir(ppy)_3$

  • Lee, Hye-Mi;Kim, A-Ran;Kim, Dae-Kyoung;Cho, Sung-Min;Chae, Hee-Yeop
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1511-1514
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    • 2009
  • Organic light emitting layer in OLED device was formed by gravure printing process in this work. Organic surface coated by gravure printing typically showed relatively bad uniformity. Thickness and roughness control was characterized by applying various mixed solvents in this work. Poly (N-vinyl carbazole) (PVK) and fact-tris(2-phenylpyridine)iridium($Ir(ppy)_3$) are host dopant system materials. PVK was used as a host and Ir(ppy)3 as green-emitting dopant. To luminance efficiency of the plasma treatment on etched ITO glass and then PEDOT:PSS spin coated. The device layer structure of OLED devices is as follow Glass/ITO/PEDOT:PSS/PVK+Ir(ppy)3-Active layer /LiF/Al. It was printed by gravure printing technology for polymer light emitting diode (PLED). To control the thickness multi-printing technique was applied. As the number of the printing was increased the thickness enhancement was increased. To control the roughness of organic layer film, thermal annealing process was applied. The annealing temperature was varied from room temperature, $40^{\circ}C$, $80^{\circ}C$, to $120^{\circ}C$.

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Improvement of AgNW of Thermal and Environmental Stability Using Plasma Treatment and Overlayer on AgNW (플라즈마 처리 및 Overlayer 형성을 통한 AgNW전극의 내열성 및 환경안정성 향상 연구)

  • An, Won-Min;Jeong, Seong-Hun;Kim, Do-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.149-149
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    • 2016
  • 투명전극인 Indium Tin Oxide (ITO)는 높은 투과도와 낮은 면저항을 가지지만 brittle한 성질로 유연성이 떨어져 플렉서블한 디바이스에 적용하기에는 어려움이 있다. 이를 해결하기 위해서 ITO를 대체할 수 있는 CNT, Graphene, AgNW, 전도성 고분자 투명전극이 연구되어지고 있다. 투명전극 중에서도 AgNW는 용액공정으로 제조 단가가 비교적 저렴하며, 높은 투과도와 전기전도 특성을 가지는 투명전극으로 주목받고 있는 차세대 투명전극이다. AgNW는 나노와이어가 네트워크를 형성하고 있어 높은 전도성과 광 투과도를 가지지만 내열성이 좋지 않아 $200^{\circ}C$ 이상의 온도에서 손상된다. 또한 흡습성의 고분자 물질로 둘러싸여 있기 때문에 내환경성이 좋지 않다는 단점이 있다. 이를 해결하기 위해 본 연구에서는 AgNW전극에 플라즈마 처리를 통해서 $250^{\circ}C$ 까지 내열성을 향상시킬 수 있었으며 추가적으로 Overlayer를 형성하여 $300^{\circ}C$까지 열적 안전성을 확보하여 내열성을 향상시켰다. 습도 85%, 온도 $85^{\circ}C$에서 36일간 환경안정성테스트 결과, 기존 AgNW 전극은 저항이 164% 증가한 것에 비해 플라즈마 처리후 Overlayer를 형성한 AgNW는 49% 저항증가로 저항증가율이 3배 이상 감소하여 환경안정성이 향상된 것을 확인하였다. 이는 흡습성 고분자 물질이 플라즈마 처리에 의해 제거되고 Overlayer가 보호막 역할을 하여 산소와 반응하지 않았기 때문으로 판단된다. 플라즈마 처리와 Overlayer를 형성한 AgNW 전극을 적용하여 투명히터를 제작한 결과 유연 기판상 투명히터로 활용이 가능함을 확인하였고 내열성이 향상되어 높은 전압에서도 안정적인 구동을 보였다. 이를 투명히터 뿐만 아니라 다양한 디바이스에 적용한다면 보다 높은 효율을 기대할 수 있을 것이라 예상된다.

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DC Magnetron Sputtering of Cr/Cu/Cr Metal Electrodes for AC Plasma Display panel (DC Magnetron Sputtering 법에 의한 AC Plasma Display panel의 Cr/Cu/Cr 금속전극 제조)

  • 남대현;이경우;박종완
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.8
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    • pp.704-710
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    • 2000
  • Metal electrode materials for plasma display panel should have low electrical resistivity in order to maintain stable gas discharge and have fast response time. They should also hae good film uniformity adhesion and thermal stability. In this study Cr/Cu/Cr metal electrode structure is formed by DC magnetron sputtering. Cr and Cu films were deposited on ITO coated glasses with various DC power density and main pressures as the major parameters. After metal electrodes were formed a heat treatment was followed at 55$0^{\circ}C$ for 20 min in a vacuum furnace. The intrinsic stress of the sputtered Cr film passed a tensile stress maximum decreased and then became compressive with further increasing DC power density. Also with increasing the main pressure stress turned from compression to tension. After heat the treatment the electrical resistivity of the sputtered Cu film of 2${\mu}{\textrm}{m}$ in thickness prepared at 1 motor with the applied power density of 3.70 W/cm$^2$was 2.68 $\mu$$\Omega$.cm With increasing the main pressure the DC magnetron sputtered Cu film became more open structure. The heat treatment decreased the surface roughness of the sputtered Cr/Cu/Cr metal electrodes.

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Induction motors with electrostatic suspension

  • Jeon, Jong-Up;Woo, Shao-Ju;Higuchi, Toshiro
    • 제어로봇시스템학회:학술대회논문집
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    • 1996.10a
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    • pp.393-396
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    • 1996
  • This paper studies electrostatically suspended induction motors (ESIM). The ESIM possesses the rotating ability of an ordinary electrostatic induction motor, in addition to providing contactless support by electrostatic suspension. To accomplish these two functions, a feedback control strategy and the operating principle of an ordinary electrostatic induction motor are used. The stator possesses electrodes which exert the electrostatic forces to the rotor and are divided into a part responsible for suspension and one for rotation. Two rotor types are utilized: a polished glass disk without any surface treatment, and a polished glass disk covered with a thin layer of conductive material (ITO layer) on only one side. In this paper, the principle of the ESIM is described, followed by stator electrode design, experimental apparatus, control strategy for stable suspension. Experimental results show that the glass disk has been rotated with a speed of approximately 70 rpm while being suspended stably at a gap length of 0.3 mm.

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Enhanced flexoelectric switching made from self-assembly of smectic liquid crystal and triallyl dopant

  • Lim, Tong-Kun;Lee, Ji-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.175-177
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    • 2006
  • Here we report an enhanced flexoelectric switching in a self-assembled system of smectic liquid crystal and some specific dopant. The assembled unit block seemed to have electric dipole and as a result induces large flexoelectric polarization due to its asymmetric shape and shows fast switching to the electric field. The unit blocks are oriented in a helical fashion in the cell with large gap (${\sim}5{\mu}m$) and shows selective reflection property. In the thin cell (${\sim}2{\mu}m$), the unit blocks are aligned homeotropically on the bare ITO substrate with no surface treatment and shows fast decaying time.

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Preparation and Properties of Sol-Gel Processed Lead Lanthanum Titanate Thin

  • Kim, Hyun-Hoo;Lee, Jung-Geun
    • Transactions on Electrical and Electronic Materials
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    • v.1 no.1
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    • pp.17-21
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    • 2000
  • In order to investigate the dependence of a content in lead lanthanum titanate (PLT) films and heat treatment, sol-gel process has been used. Four types of PLT thin films with the chemical formula, Pb$\_$1-x/ La$\_$x/Ti$\_$1-x/4/O$_3$(X=18, 21, 24 and 28 mole %) have been fabricated on Pt/Ti/SiO$_2$/Si multi-layers and ITO/glass substrates, The post-annealing temperature in the range of 400~700 $\^{C}$ is applied for the formation of perovskite structure in PLT films. The structureal, electrical and optical properties of PLT film with the addition of La content are estimated. The films orientation and surface structure of films are studied by XRD (X-ray diffraction) and SEM(scanning electron microscopy). The P-E hysteresis loop become narrower with increasing La content. The average transmittance of the films is about 80%.

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Influences of Plasma Treatment on the Electrical Characteristics of rf-magnefrom sputtered $BaTa_2O_6$ Thin Films (플라즈마 표면 처리가 $BaTa_2O_6$박막의 전기적 특성에 미치는 효과에 관한 연구)

  • Kim, Young-Sik;Lee, Yun-Hi;Ju, Byeong-Kwon;Sung, Mang-Young;Oh, Myung-Hwan
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.319-325
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    • 1999
  • Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

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Improvement of AgNW of Electrical Properties and Environmental Stability Using Plasma Treatment and Overlayer on AgNW (실버나노와이어 전극의 플라즈마 처리 및 보호막 형성을 통한 전기적 특성 및 안정성 향상 연구)

  • An, Won-Min;Jeong, Seong-Hun;Kim, Do-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.112-112
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    • 2017
  • 광학적 전기적 특성이 우수한 Indium Tin Oxide (ITO)는 대표적인 투명전극으로 사용되어지고 있다. 하지만 Brittle한 성질로 인해서 플렉서블한 디바이스에 적용하기에는 어려움이 있다. 이러한 문제를 해결하기 위해 본 연구에서는 용액 공정으로 제조 단가가 비교적 저렴하며, 높은 투과도와 전기전도 특성을 가지는 투명전극으로 주목받고 있는 차세대 투명전극인 AgNW에 관한 연구를 수행하였다. AgNW는 나노와이어가 네트워크를 형성하고 있어 높은 전도성과 광 투과도를 가지지만 용액 제조시에 분산에 용이하기 위해서 흡습성의 고분자 물질로 둘러싸여 있기 때문에 환경 안정성이 좋지 않다는 단점이 있다. 또한 나노와이어 간의 높은 접촉저항으로 인해서 접촉저항을 감소시키기 위한 후처리 공정이 요구되어진다. 이를 해결하기 위해 본 연구에서는 AgNW 전극에 플라즈마 처리를 통해서 나노와이어간의 접촉저항을 감소시켜 전기적특성이 약 12% 향상됨을 확인하였다. 고온, 고습 장시간 안정성테스트 결과, 기존 AgNW 전극에 비해서 플라즈마 처리와 보호막을 형성한 AgNW는 저항증가율이 3배 이상 감소하여 환경안정성이 향상된 것을 확인하였다. 이는 흡습성 고분자 물질이 플라즈마 처리에 의해 제거되었고 보호막을 형성하여 산소와의 반응을 감소시켰기 때문으로 판단된다. 플라즈마 처리와 보호막을 형성한 AgNW 전극을 적용하여 투명히터, Polymer Dispersed Liquid Crystal(PDLC)등 다양한 디바이스에 적용한다면 기존의 AgNW 전극보다 높은 효율을 기대할 수 있을 것이라 예상된다.

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A Study on the Release Characteristics During Wafer-Level Lens Molding Using Thermosetting Materials (열경화성 소재를 사용한 웨이퍼 레벨 렌즈 성형 중 이형 특성에 관한 연구)

  • Park, Si-Hwan;Hwang, Yeon;Kim, Dai-Geun
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.22 no.1
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    • pp.461-467
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    • 2021
  • Among the defect factors that can occur when a wafer-level lens is molded using a thermosetting material, the mold sticking problem of a molded lens during the release process can damage the molded substrate and deform the substrate at the wafer level. An experiment was conducted to examine the factors affecting the demolding force in the lens forming process. The demolding force was examined according to the coating material of the molds. The mold was surface-treated with ITO and Ti, followed by plasma treatment in an O2 atmosphere. A DLC coating was then performed, and the curing and releasability were examined. A coating method for the pull-off experiment was selected based on the results. To measure the demolding force according to the curing process conditions, a method of curing at a constant pressure and a method of curing at a constant position were applied. As a result, the TiO2 surface treatment reduced the release force. When cured by controlling the location, curing shrinkage can reduce the adhesion energy of the interface during curing, resulting in better demolding.

Enhanced Electrical Conductivity of Gold Doped Graphene Films by Microwave Treatment

  • Kim, Yoo-Seok;Song, Woo-Seok;Cha, Myoung-Jun;Lee, Su-Il;Cho, Ju-Mi;Kim, Sung-Hwan;Park, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.188-188
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    • 2012
  • Graphene, with its unique physical and structural properties, has recently become a proving ground for various physical phenomena, and is a promising candidate for a variety of electronic device and flexible display applications. Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ${\sim}60{\Omega}$/sq and ~85% transmittance in the visible range, the chemical vapor deposition (CVD) synthesized graphene electrodes have a higher transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. In this study, we report a creative strategy, irradiation of microwave at room temperature under vacuum, for obtaining size-homogeneous gold nano-particle doping on graphene. The gold nano-particlization promoted by microwave irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping. These results clearly revealed that gold nanoparticle with ${\geq}30$ nm in mean size were decorated along the surface of the graphene after microwave irradiation. The fabrication high-performance transparent conducting film with optimized doping condition showed a sheet resistance of ${\geq}100{\Omega}$/sq. at ~90% transmittance. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

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