• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1359-1360
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• 2006

lTO(Indium-Tin-Oxide) was used as anode material for OLED. Characteristics of ITO have great effect on efficiency of OLEDS(Organic light emitting diodes). ITO surface was treated by Nd:YAG laser in order to improve its chemical properties, wettability, adhesive property and to remove the surface contaminants while maintaining its original function. In this study, main purpose was to improve the efficiency of OLEDs by the ITO surface treatment: ITO surface was treated using a Nd:YAG(${\lambda}=266nm$, pulse) with a fixed power of 0.06[w] and various stage scanning velocities. Surface morphology of the ITO was investigated by AFM. Test OLEDs with surface treated ITO were fabricated by deposition of TPD (HTL), Ald3 (ETL/TML) and Al (cathode) thin films. Device performance of the OLEDs such as V-I-L was investigated using Source Measurement Unit (SMU: Keithly. Model 2400) and Luminance Measurement (TOPCON. BM-8).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.450-450
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• 2007

Indium tin oxide (ITO), which is used as an electrode in organic thin film transistors (OTFT), was modified with a self-assembled monolayer (SAM) by wet chemical surface modification. The surface of the ITO was treated by dipping method in a solution of 2-chloroethane phosphonic acid (2-CEPA) at room temperature. The work function in the ITO which was modified with the SAM in the 2-CEPA had 5.43eV. A surface energy and a transmittance were unchanged in an error range. On this study, therefore, possibility of ohmic contact is showed in the interface between the ITO and the organic semiconductors. These results suggest that the treatment of the ITO with the SAM can greatly enhance the performance of the OTFT.

• 경영정보학연구
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• 제14권3호
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• pp.53-74
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• 2012

IT 아웃소싱은 서로 다른 두 기업의 자원들이 계약이라는 관계를 통해 결합되는 특수한 상황이다. 자원기반 관점(Resource-Based View)에서는 IT 아웃소싱 제공 기업의 자원, 고객 기업의 IT 자원, 그리고 제공 기업과 고객 기업간의 관계 자원이 동시에 IT 아웃소싱 성공에 영향을 미칠 수 있다고 한다. 그러나 선행 연구들 중 이 세 IT 자원들의 영향력을 동시에 비교 분석한 연구가 드물다. 또한 IT 자원은 유형적 IT 자산과 무형적 IT 역량으로 구분되는데, IT 역량만이 IT 성과에 영향을 미칠 것이라는 Bharadwaj(2000) 등의 주장을 IT 아웃소싱 배경에서 실증 분석한 연구도 거의 없다. 따라서 본 연구는 1) 세 IT 자원이 IT 아웃소싱 성공에 미치는 영향을 동시에 비교검증하고, 2) 특히 고객 기업의 IT 자원을 IT 자산과 IT 역량으로 구분하여 IT 아웃소싱 성공에 대한 영향력을 검증하였다. 이 연구 목적을 달성하기 위해 최근 3년간 국내 순위 100위권 내에 속한 기업 138개 중 45개 기업의 62개 IT 아웃소싱 프로젝트를 대상으로 자료를 수집하였고, 수집한 자료를 PLS를 사용한 경로분석으로 분석하였다. 경로분석결과, IT 아웃소싱 제공 기업의 자원은 높은 신뢰관계가 있을 때만 IT 아웃소싱 성공에 영향을 미치고, 고객 기업이 높은 IT 역량을 확보할 때만 IT 아웃소싱이 성공할 수 있음을 발견하였다. 이를 통해 본 연구는 IT 아웃소싱 상황에서도 자원기반 관점을 다시 한번 확증하였다는 점에 그 의의를 둘 수 있다. 즉 Bharadwaj(2000)의 연구결과와 마찬가지로 기업의 IT 자산이 아닌 IT 역량이 IT 성과에 영향을 미친다는 것을 IT 아웃소싱 상황에서 실증적으로 보여주었고, 관계 자원의 중요성도 본 연구의 결과를 통해 제시하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.478.1-478.1
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• 2014

We investigated $MoO_3$ graded ITO electrodes for organic solar cells (OSCs) without PEDOT:PSS buffer layer. The effect of $MoO_3$ thickness on the electrical, optical, and structural properties of $MoO_3$ graded ITO anodes prepared by RF/DC magnetron co-sputtering system using $MoO_3$ and ITO targets was investigated. At optimized conditions, we obtained $MoO_3$ graded ITO electrodes with a low sheet resistance of 13 Ohm/square, a high optical transmittance of 83% and a work function of 4.92 eV, comparable to conventional ITO films. Due to the existence of $MoO_3$ on the ITO electrodes, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer successfully operated. Although OSCs fabricated on ITO anode without buffer layer showed a low power conversion efficiency of 1.249%, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer showed a outstanding cell performance of 2.545%. OSCs fabricated on the $MoO_3$ graded ITO electrodes exhibited a fill factor of 61.275%, a short circuit current of 7.439 mA/cm2, an open circuit voltage of 0.554 V, and a power conversion efficiency of 2.545%. Therefore, $MoO_3$ graded ITO electrodes can be considered a promising transparent electrode for cost efficient and reliable OSCs because it could eliminate the use of acidic PEDOT:PSS buffer layer.

• Journal of the Optical Society of Korea
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• 제20권6호
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• pp.807-812
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• 2016

Transparent film heaters (TFHs) based on Joule heating are currently an active research area. However, TFHs based on an indium tin oxide (ITO) monolayer have a number of problems. For example, heating is concentrated in only part of the device. Also, heating efficiency is low because it has high sheet resistance ($R_s$). To address these problems, this study introduced hybrid layers of ITO/Ag/ITO deposited by magnetron sputtering, and the electrical, optical, and thermal properties were estimated for various thicknesses of the metal interlayer. The $R_s$ of ITO(40)/Ag/ITO(40 nm) hybrid TFHs were 5.33, 3.29 and $2.15{\Omega}/{\Box}$ for Ag thicknesses of 10, 15, and 20 nm, respectively, while the $R_s$ of an ITO monolayer (95 nm) was $59.58{\Omega}/{\Box}$. The maximum temperatures of these hybrid TFHs were 92, 131, and $145^{\circ}C$, respectively, under a voltage of 3 V. And that of the ITO monolayer was only $32^{\circ}C$. For the same total thickness of 95 nm, the heat generation rate (HGR) of the hybrid produced a temperature approximately $100^{\circ}C$ higher than the ITO monolayer. It was confirmed that the film with the lowest $R_s$ of the samples had the highest HGR for the same applied voltage. Overall, hybrid layers of ITO/Ag/ITO showed excellent performance for HGR, uniformity of heat distribution, and thermal response time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.411-412
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• 2008

We have studied a property change of organic light-emitting diodes (OLED) due to an indium tin oxide (ITO) surface reformation. The characteristics of OLED were improved by oxygen plasma processing of an ITO in this work. ITO is widely used as a transparent electrode in light-emitting devices, and the OLED device performance is sensitive to the surface properties of the ITO. The OLED devices with the structure of ITO/TPD(50nm)/$Alq_3$(70nm)/LiF(0.5nm)/Al(100nm) were fabricated, and the surface properties of ITO were investigated by using various characterization techniques. The oxygen plasma process of an ITO was processed by using RF power of 125W and oxygen partial pressure of $2\times10^{-2}$ Torr. The oxygen plasma processing of an ITO processed for 0/1/2/3/4min. Current-voltage-luminance characteristics of the devices show that turn-on voltage is 4V for 2min device and the luminance reaches about 27,000cd/$m^2$ for 4min device. The current efficiency shows that 3min device becomes saturated to be about 8cd/ A. They show that emission was from the $Alq_3$ layer, because the peak wavelength is about 525nm. View angle-dependent emission spectra show that the emission intensity decreases as the angle increases.

• Transactions on Electrical and Electronic Materials
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• 제10권6호
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• pp.203-207
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• 2009

We have investigated the effect of ambient gases on the structural, electrical, and optical characteristics of ITO thin films intended for use as anode contacts in OLED (organic light emitting diodes) devices. These ITO thin films are deposited by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at $300{^{\circ}C}$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.5 sccm to 5 sccm and from 0.01 sccm to 0.25 sccm, respectively. The intensity of the (400) peak in the ITO thin films increased with increasing $O_2$, flow rate whilst the (400) peak was nearly invisible in an atmosphere of Ar+$H_2$. The electrical resistivity of the ITO thin films increased with increasing $O_2$ flow rate, whereas the electrical resistivity decreased sharply under an Ar+$H_2$ atmosphere and was nearly similar regardless of the $H_2$ flow rate. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed an average transmittance of over 80% in the visible range. The OLED device was fabricated with different ITO substrates made with the configuration of ITO/$\alpha$-NPD/DPVB/$Alq_3$/LiF/Al in order to elucidate the performance of the ITO substrate. Current density and luminance of OLED devices with ITO thin films deposited in Ar+$H_2$ ambient gas is the highest among all the ITO thin films.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.353-358
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• 2016

In this paper, we have studied about the optimum fabrication condition of the printed Indium Tin Oxide (ITO) layers for the electrical resistance-type sensor application. We have investigated on the substrates surface treatments, mixing ratio of organic binder/ITO powder, and viscosity of the printing paste to determine the optimum condition of the screen printed ITO layer. Also, we found that the printing condition is closely related with the sensor performance. To know the feasibility of printed ITO layer as an electrical resistance-type sensor, we have fabricated the ITO sensors with a printed and sputtered ITO layers. The printed ITO films revealed $10^2$ times higher sensitivity than the sputtered ITO layer. Also, the sputtered ITO layer exhibited an operating temperature of $127^{\circ}C$ at the operating voltage of 5 V. While, in case of the printed ITO layer showed the operating temperature of $27.6^{\circ}C$ in high operating voltage of 30 V. We found that the printed ITO layer is suitable for the various sensor applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.67-68
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• 2008

A simple bi-layer structure of organic light emitting diode (OLED) was used to study the characteristics of anode preparation. Indium tin oxide (ITO) anode surface treatment of OLEDs was performed to get the optimum condition for the ITO anode. The ITO surface was treated by $O_2$ or $O_2$ / Ar mixed gas plasma with different processing time. The electrical characteristics of OLED were improved by plasma treatment. The operating voltage of OLED with $O_2$ or $O_2$/Ar mixed gas plasma treated anodes decreases from 8.2 to 3.4 V and 3.2V, respectively. The $O_2$ /Ar mixed gas plasma treatment results in better electrical property.

• 한국전기전자재료학회논문지
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• 제18권12호
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• pp.1143-1147
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• 2005

In this study, we report an improved efficiency of Organic light emitting diodes(OLEDs), using $UV/O_3$ treated anode and different cathode. We investigated the efficiency of OLEDs by $UV/O_3$ treatment of ITO surface. We Performed $UV/O_3$ treatment and found that $UV/O_3$ treatment enhanced the performance of OLEDs. The fundamental structure of the OLEDs was ITO $anode/{\alpha}-NPD/Alq_3/Al$ or Li:Al cathode. The Li:Al can improve the OLEDs efficiency dramatically in cathode because it has lower work function than Al. Current-voltage, Luminance-voltage characteristics and luminance efficiency were measured at room temperature.