• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.242-245
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• 2013

Sn-doped $In_2O_3$ (ITO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on bare glass and $TiO_2$-deposited glass substrates to investigate the effect of a $TiO_2$ buffer layer on the electrical and optical properties of ITO films. The thicknesses of $TiO_2$ and ITO films were kept constant at 5 and 100 nm, respectively. As-deposited ITO single layer films show an optical transmittance of 75.9%, while $ITO/TiO_2$ bi-layered films show a lower transmittance of 76.1%. However, as-deposited $ITO/TiO_2$ films show a lower resistivity ($9.87{\times}10^{-4}{\Omega}cm$) than that of ITO single layer films. In addition, the work function of the ITO film is affected by the $TiO_2$ buffer layer, with the $ITO/TiO_2$ films having a higher work-function (5.0 eV) than that of the ITO single layer films. The experimental results indicate that a 5-nm-thick $TiO_2$ buffer layer on the $ITO/TiO_2$ films results in better performance than conventional ITO single layer films.

• Journal of the Korean Ceramic Society
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• v.35 no.4
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• pp.347-354
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• 1998

Densification and grain growth behaviors of ITO ceramics were investigated as a function of TiO2 ad-ditions. TiO2 addition led to inhibition of the grain growth and promotion of the densification of ITO ceram-ics. From the microstructure observation it was found that the crack-like voids which were formed in pure ITO specimens decreased with increase of TiO2 additon. The grain growth exponent(n) was measur-ed to be 4 for pure ITO 3 for TiO2-doped ITO specimens respectively. It was supposed that the grain boun-dary migration of pure ITO ceramics was controlled by the pores which were moved by surface diffusion. On the contrary the grain boundary migration of TiO2-doped ITO specimens was depressed by solute drag effect. The activation energies for grain growth were measured to be 1013 kJ/mol for pure ITO ceramics and 460kJ/mol for TiO2-doped ITO specimens respectively.

• Analytical Science and Technology
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• v.6 no.2
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• pp.239-246
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• 1993

The structure of $(BaSr)TiO_3$ thin film deposited on ITO coated glass, bare glass and (100) Si substrates was not changed, but the crystallinity was improved by the polycrystalline ITO layer and (100) Si substrate. The composition of $(BaSr)TiO_3$ thin film deposited on ITO coated glass was nearly stoichiometric ((Ba+Sr)/Ti=1.08~1.09) and very uniform through all deposition process. But as the deposition temperature increases, the interdiffusion between grown thin film and ITO layer and between ITO layer and base glass is severer. $(BaSr)TiO_3$ thin film deposited on ITO coated glass substrate was highly transparent. The refractive index($n_f$) of $(BaSr)TiO_3$ thin film deposited on ITO coated glass was 2.138~2.286 as a function of substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.114-116
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• 1992

ITO/TiO$_2$/Se solar cell were fabricated by vacuum deposition method, the Se and TiO$_2$were deposited on the ITO/Glass. Prior to the electrical properties of film, the provide Te between the ITO and the Se film were deposited by substrate temperature 20[$^{\circ}C$] and evaporation time 15[min], next time TiO$_2$ were treated by rf-magnetron sputtering in substrate temperature 250[$^{\circ}C$]. Fabricated ITO/TiO$_2$/Se solar cell were as follows : Open Voltage V$\_$oc/=848[mV], Short Circuit Current I$\_$sc/=10.79[mA/$\textrm{cm}^2$]. Fill Factor FF=0.518, energy conversion efficiency η=4.74[%] under the illumination of AM 1.

• Korean Journal of Materials Research
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• v.21 no.7
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• pp.371-376
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• 2011

We report on the effects of $TiO_2$ doping power on the characteristics of multicomponent $TiO_2$-ITO (TITO) electrodes prepared by a multi-target sputtering system with tilted cathode guns. Both as-deposited and annealed TITO electrodes showed linearly increased sheet resistance and resistivity with increasing $TiO_2$ doping power. However, the TITO electrodes exhibited a fairly high optical transmittance regardless of the $TiO_2$ doping power due to the high transparency of the $TiO_2$. Although the annealed TITO showed much lower sheet resistance and resistivity relative to the as-deposited samples, the electrical properties of the annealed samples exhibited similar dependence on the $TiO_2$ power to the as-deposited samples. In addition, it was found that doping of an anatase $TiO_2$ in the ITO electrode prevented the preferred (222) orientation of the TITO electrodes. Although the TITO electrode showed higher sheet resistance and resistivity than that of the pure ITO electrode, it offers a very smooth surface and usage of a low-cost Ti element. It is thus considered a promising multicomponent transparent conducting electrode for cost-efficient flat panel displays and photovoltatics.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.88-91
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• 2003

Electromagnetic interference shielding and near-infrared cutoff filters for plasma display panel application were designed and fabricated by radio frequency magnetron sputtering. Three types of the filters were prepared: the basic structure of type A consisted of [$TiO_2$ Ti Ag $TiO_2$]; type B, of [$TiO_2$ ITO Ag $TiO_2$]; type C, of [$TiO_2$ ITO Ag ITO $TiO_2$]. Ti and ITO layers deposited on Ag layers were employed as barriers to prevent the oxidation and the diffusion of Ag film into the adjacent oxide layers. Optical, electrical, chemical, and structural properties were investigated, and the result shows that the filters with the ITO barrier layers provided an enhancement in transmittance in the visible owing to a lower absorption of ITO layers than Ti layers. Type C filter showed better optical and electrical performances and smoother surface roughness than Type B and C filters: the average sheet resistance was as low as 1.51 $\Omega\Box$ (where $\square$ stands for a square film), the peak transmittance in the visible was as high as 78.2 %, and the average surface roughness was 1.48 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.711-717
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• 1998

BST(70/30) and BST(50/50) thin films were prepared by Sol-Gel method and studied about the microstructural and dielectric properties with Pt and ITO bottom electrodes. The stock solution was synthesized and spin coated on the Pt/Ti$SiO_2$/Si and Indium Tin Oxide(ITO)/ glass substrate. the coated films were dries at 350$^{\circ}C$ for 10 minutes and annealed at $750^{\circ}C$ for 1 hour for the crystallization. The thin films coated on ITO substrate were crystallized easily and the packing density and roughness of surface were better that those of films coated on Pt substrates. In the BST(50/50) composition the structural properties were similar to the BST(70/30) composition and grain size were decreased with increasing the contents of Sr. The dielectric constant was higher in the BST(50/50) composition compared with the BST(70/30) composition. Using the ITO substrate, the dielectric constant was higher than the Pt substrate while the dielectric loss was showed a reverse trend. The dielectric constant with and increase of temperature was decreased slowly.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.24-28
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• 2010

We have proposed an Buffer layer to improve the transmittance of ITO. Here, $SiO_2$ and $TiO_2$ were selected as the Buffer layer coating material. The structures of Buffer layer were designed in ITO/$SiO_2/TiO_2$/Glass and ITO/Glass/$TiO_2/SiO_2$. Then, these materials were deposited by ion-assisted deposition system. Transmittances of deposited ITO were 86.14 and 85.07%, respectively. These results show that the proposed structure has higher transmittance than the conventional ITO device.

• Journal of the Korean Ceramic Society
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• v.48 no.1
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• pp.94-98
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• 2011

A Sn-doped $In_2O_3$ (ITO) nanowire photoelectrode was produced using a simple metal evaporation method at low synthesis temperature (< $540^{\circ}C$). The nanowire electrodes have large surface area compared with that of flat ITO thin film, and show low electrical resistivity of $5.6{\times}10^{-3}{\Omega}cm$ at room temperature. In order to apply ITO nanowires to the photoelectrodes of dye-sensitized solar cell (DSSC), those surfaces were modified by $TiO_2$ nanoparticles using a chemical bath deposition (CBD) method. The conversion efficiency of the fabricated $TiO_2$/ITO nanostructure-based DSSC was obtained at 1.4%, which was increased value by a factor of 6 than one without ITO nanowires photoelectrode. This result is attributed to the large surface area and superior electrical property of the ITO nanowires photoelectrode, as well as the structural advantages, including short diffusion length of photo-induced electrons, of the fabricated $TiO_2$/ITO nanostructure-based DSSC.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.1
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• pp.7-11
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• 2000

The anti-reflective anti-static (ARAS) optical film is designed using absorbent materials such as ITO, $TiN_xW_y$, Ag by Essential Macleod program. [air ${\mid}TiN_xW_y{\mid}SiO_2{\mid}$ glass] two layer shows wide-band AR coating in the wavelength range of 450~700 nm. The reflectivity, transmittance of this coating are below 0.5%, about 75%, respectively. [air $SiO_2{\mid}TiO_2{\mid}SiO_2{\mid}$, ITO glass] layer can adjust reflectance of below 0.5% with above 97% transmittance. In the [air ${\mid}SiO_2{\mid}TiO_2{\mid}SiO_2{\mid}$ Ag glass] layer, the transmission can be controlled at above 96% with reflectance of 1~2%.