• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.64-65
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• 2007

High-efficiency white organic light-emitting diodes (WOLEDs) were fabricated with two emissive layers and exciton blocking layer was sandwiched between two phosphorescent dyes which were, bis(3,5-Difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (Flrpic) as blue emission and a newly synthesized red phosphorescent material guest, Bis(5-benzoyl-2-phenylpyridinato-C,N)iridium(III) (acetylacetonate) ((Bzppy)2Ir(III)acac). This exciton blocking layer prevents a triple-triple energy transfer between the two phosphorescent emissive layers with balanced emission of blue and red. The white device showed the Commission Internationale d'Eclairage (CIEx,y) coordinates of (0.34, 0.40) at the maximum luminance of $24100\;cd/m^2$ and maximum luminous efficiency of 22.4 cd/A, respectively.

• Current Optics and Photonics
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• 제5권2호
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• pp.173-179
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• 2021

The electroluminescence (EL) intensities of GaN-based light-emitting diodes (LEDs) are estimated based on their photoluminescence (PL) properties. The PL intensity obtained under open-circuit conditions is divided into two parts: the PL intensity under a forward bias lower than the optical turn-on voltage, and the difference between the PL intensities under open-circuit conditions and under forward bias. The luminescence induced by photoexcitation under a constant forward bias lower than the optical turn-on voltage is primarily the PL from the excited area of the LED. In contrast the intensity difference, obtained by subtracting the PL intensity under the forward bias from that under open-circuit conditions, contains the EL induced by the photocarriers generated during photoexcitation. In addition, a reverse photocurrent is generated during photoexcitation under constant forward bias across the LED, and can be correlated with the PL-intensity difference. The relationship between the photocurrent and PL-intensity difference matches well the relationship between the injection current and EL intensity of LEDs. The ratio between the photocurrent generated under a bias and the short-circuit current is related to the ratio between the PL-intensity difference and the PL intensity under open-circuit conditions. A relational expression consisting of the ratios, short-circuit current, and PL under open-circuit conditions is proposed to estimate the EL intensity.

• Current Optics and Photonics
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• 제3권2호
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• pp.164-171
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• 2019

Photoluminescence (PL) properties of GaN-based light-emitting diodes (LEDs) were analyzed to study the effects of carrier leakage on the luminescence properties at room temperature. The electrical leakage and PL properties were compared for LEDs showing leakages at forward bias and an LED with an intentional leakage path formed by connecting a parallel resistance of various values. The leakages at the forward bias, which could be observed from the current-voltage characteristics, resulted in an increase in the excitation laser power density for the maximum PL efficiency (ratio of PL intensity to excitation power) as well as a reduction in the PL intensity. The effect of carrier leakages on PL properties was similar to the change in PL properties owing to a reduction of the photovoltage by a reverse current since the direction of the carrier movement under photoexcitation is identical to that of the reverse current. Valid relations between PL properties and electrical properties were observed as the PL properties deteriorated with an increase in the carrier leakage. The results imply that the PL properties of LED chips can be an indicator of the electrical properties of LEDs.

• Advances in nano research
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• 제12권4호
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• pp.415-426
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• 2022

Nickel substituted cobalt-zinc ferrite nanoparticles with composition Co_0.5Zn_0.5Ni_xFe_2-xO₄ (x = 0.25, 0.5, 0.75, 1.0) were synthesized using a wet chemical method named citrate precursor method. Various characterizations of the prepared nanoferrites were done using X-ray powder diffractometry (XRD), Scanning electron microscopy (SEM), UV visible spectroscopy and Fourier transform spectroscopy technique (FT-IR). XRD confirmed the formation of cubic spinel structure of the samples with single phase having one characteristic peak at (311). The value of optical band gap (E_g) was found to decrease with Ni substitution and have values in the range 2.30eV to 1.69eV. A Fenton-type system was created by photocatalytic activity using source of visible light for removal of methylene blue dye. Observations revealed increase in the degradation of methylene blue dye with increasing nickel content in the samples. The degradation percentage was increased from 77.32% for x = 0.25 to 90.16% for x = 1.0 in one hour under the irradiation of visible light. Also, the degradation process was found to have pseudo first order kinetics model. Hence, it can be observed that synthesized nickel doped cobalt-zinc ferrites have good capability for water purification and its degradation efficiency enhanced with increase in nickel concentration.

• 한국산학기술학회논문지
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• 제21권6호
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• pp.411-416
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• 2020

본 연구는 적외선 광학재료의 중적외선 영역의 굴절률을 파악하기 위해 반사율을 측정하고 굴절률과 반사율의 관계로부터 굴절률을 추정하는 방법을 제안한다. 전반사 거울 4개를 일정한 간격으로 배열하고 적외선 광원으로부터 연속 파장의 평행광이 45°로 입사되도록 광 경로를 구성한다. 광 경로를 따라 4개의 전반사 거울에 반사되어 온 광강도 I_B를 측정한 후, 광 경로의 마지막에 놓이는 거울을 시편으로 교체하고 광강도 I_s를 측정한다. I_B와 I_s, 전반사 거울의 비를 이용하여 재료의 반사율을 계산한다. 계산된 반사율과 Fresnel의 굴절률과 반사율 관계식에 넣고 시행착오법으로 굴절률을 추정한다. 이 방법을 적용하여 사파이어(Al₂O₃), 게르마늄(Ge), 불화마그네슘(MgF₂), 황화아연(ZnS)재료를 대상으로 실험하고 굴절률을 추정하여 참고문헌자료들과의 비교를 통하여 모든 재료에 대해 파장범위 3 - 5㎛에서 최대 차이 2% 이하로 잘 일치하는 결과를 얻을 수 있었으며, 이를 통해 본 굴절률 측정방법의 타당성을 확인할 수 있다. 본 연구에서 제시된 방법은 연속 파장의 적외선 광원을 사용하기 때문에 한 번의 측정으로 여러 파장에 대한 굴절률을 추정 할 수 있는 장점이 있다.

• 한국재료학회지
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• 제26권3호
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• pp.117-122
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• 2016

White organic light-emitting diodes with a structure of indium-tin-oxide [ITO]/N,N-diphenyl-N,N-bis-[4-(phenylm-tolvlamino)-phenyl]-biphenyl-4,4-diamine [DNTPD]/[2,3-f:2, 2-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile [HATCN]/1,1-bis(di-4-poly-aminophenyl) cyclo -hexane [TAPC]/emission layers doped with three color dopants/4,7-diphenyl-1,10-phenanthroline [Bphen]/$Cs_2CO_3$/Al were fabricated and evaluated. In the emission layer [EML], N,N-dicarbazolyl-3,5-benzene [mCP] was used as a single host and bis(2-phenyl quinolinato)-acetylacetonate iridium(III) [Ir(pq)2acac]/fac-tris(2-phenylpyridinato) iridium(III) $[Ir(ppy)_3]$/iridium(III) bis[(4,6-di-fluoropheny)-pyridinato-N,C2] picolinate [FIrpic] were used as red/green/blue dopants, respectively. The fabricated devices were divided into five types (D1, D2, D3, D4, D5) according to the structure of the emission layer. The electroluminescence spectra showed three peak emissions at the wavelengths of blue (472~473 nm), green (495~500 nm), and red (589~595 nm). Among the fabricated devices, the device of D1 doped in a mixed fashion with a single emission layer showed the highest values of luminance and quantum efficiency at the given voltage. However, the emission color of D1 was not pure white but orange, with Commission Internationale de L'Eclairage [CIE] coordinates of (x = 0.41~0.45, y = 0.41) depending on the applied voltages. On the other hand, device D5, with a double emission layer of $mCP:[Ir(pq)_2acac(3%)+Ir(ppy)_3(0.5%)]$/mCP:[FIrpic(10%)], showed a nearly pure white color with CIE coordinates of (x = 0.34~0.35, y = 0.35~0.37) under applied voltage in the range of 6~10 V. The luminance and quantum efficiency of D5 were $17,160cd/m^2$ and 3.8% at 10 V, respectively.

• 한국안광학회지
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• 제3권1호
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• pp.217-222
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• 1998

$SiO_2-TiO_2-AgO$ 코팅박막을 졸-겔법으로 현미경용 슬라이드 유리판과 씰리콘 기판에 제조하였다. 이 박막의 열처리온도는 $500^{\circ}C$가 적절하였으며 5회 반복코팅한 박막의 두께는 310nm였다. AgO가 10mol% 첨가된 박막의 표면은 균일한 구조를 보였으나 첨가량이 많아질수록 박막의 표면에 pin hole과 AgO의 석출에 기인한 cluster를 보였다. 열처리온도의 증가에 따라 IR흡수의 정도가 점차 감소하였고, AgO 첨가량의 증가에 따라 반사율은 점차 감소하였으며 색상은 light yellow에서 무채색 쪽으로 점차 전이하였다.

• 반도체디스플레이기술학회지
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• 제8권4호
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• pp.15-19
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• 2009

A high efficient organic red light emitting device with structure of DNTPD/TAPC/$Bebq_2$ :[$(pq)_2Ir(acac)$, SFC-411]/SFC-137 was fabricated on the plastic substrate, which can be applied in the fields of flexible display and illumination. In the device structure, N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD] as a hole injection layer and 1,1-bis-(di-4-tolylaminophenyl) cyclohexane [TAPC] as a hole transport were used. Bis(10-hydroxybenzo[h]quinolinato) beryllium complex [$Bebq_2$] was used as a light emitting host material. The host material, $Bebq_2$ was doubly doped with volume ratio of 7% iridium(III)bis-(2-phenylquinoline)acetylacetonate[$(pq)_2$Ir(acac)] and 3% SFC-411[red phosphor dye coded by the proprietary company]. And then, SFC-137 was used as an electron transport layer. The luminous intensity and current efficiency of the fabricated device were $22,780\;cd/m^2$ at 9V and 17.3 cd/A under $10,000\;cd/m^2$, respectively. The maximum current efficiency of the device was 22.4cd/A under $580\;cd/m^2$.

• 식물조직배양학회지
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• 제25권6호
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• pp.507-514
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• 1998

자리공 엽절편에 Agrobacterium tumefaciens $A_4$T을 접종하여 암상태에서 초기 접종량의 139배로 분지능이 높고 성장률이 우수한 모상근 세포주인 PEH2를 선발하였다. 선발된 모상근으로부터 생리활성 물질인 Phytolaccoside G 및 D2를 IR, Mass, NMR등으로 동정하였다. 모상근 PEH2의 성장은 SH배지에서 가장 양호하였으며, 암상태 보다 광상태에서 배양하였을 때 40% 성장이 억제되었으며, betalain의 생성은 white 배지에서 가장 양호하였다. 배지별 Phytolaccoside G와 D2의 생성은 MS배지에서 암상태로 배양하였을 때 가장 양호하였으며, SH 및 . White 배지에서는 암상태보다 광상태에서 높은 생성을 나타내어 phytolaccoside G와 D2의 생성은 광에너지에 의하여 조절됨을 확인하였다. 자리공 모상근에서 betalain 및 phytolaccoside G와 D2의 생산성을 향상시키기 위한 방안으로 처리한 elicitor 을 처리하였던 바, 모상근의 성장은 억제되었으나, chitosan 및, yeast extract에 의하여 betalain 및 Phytolaccoside G와 D2의 생성이 촉진되어 적절한 elicitor와 광의 조합처리는 자리공 모상근으로부터 betalain 및 Phytolaccoside G와 D2의 생산성을 향상시킬 수 있음을 확인하였다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 추계종합학술대회
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• pp.227-232
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• 2003

본 논문에서는 다양한 조명하에서 실시간으로 눈을 검출하고 추적하는 새로운 방법을 제안하고자 한다. 기존의 능동적 적외선을 이용한 눈 검출 및 추적 방법은 외부의 조명에 매우 민감하게 반응하는 문제점을 가지고 있으므로, 본 논문에서는 적외선 조명을 이용한 밝은 동공 효과와 전형적인 외형을 기반으로 한 사물 인식 기술을 결합하여 외부 조명의 간섭으로 밝은 동공 효과가 나타나지 않는 경우에도 견실하게 눈을 검출하고 추적 할 수 있는 방법을 제안한다. 눈 검출과 추적을 위해 SVM과 평균 이동 추적방법을 사용하였고, 적외선 조명과 카메라를 포함한 영상 획득 장치를 구성하여 제안된 방법이 효율적으로 다양한 조명하에서 눈 검출과 추적을 할 수 있음을 보여 주었다.