• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.7
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• pp.723-730
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• 2007

This paper shows how the ACLR of power amplifier can be reduced by using Anti-phase IMD linearization technique which generate anti-phase IMD in the driver stage compare to output stage's IMD. And design process proposed. From the experimental result of W-CDMA 4FA input signal, this amplifier has ACLR -55 dBc@5 MHz offset at 30 watts average power. Compare to optimum matching technique to get maximum power gain, this technique has been improved ACLR by 12 dBc. Also this amplifier meets 50 watts average output power amplifier specification in domestic market.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.221-224
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• 2005

This paper discribes the nonlinear distortion of a pHEMT power amplifier. In the paper, we have used some commercially available power amplifiers for analyzing the relationship between the $IMD_3$ and ACPR for wireless LAN. And the $IMD_3$ results using two-tone test have been compared with ACPR to satisfy the requited 802.11g standard ACPR value. Measurement result shows that $IMD_3$ of 20MHz tone-spacing need to be more than 18.45dBc for power amplifiers. The WCDMA signal is fed into the power amplifier, for analyzing relationship between the asymmetrical $IMD_3$ and ACLR. With measurement result, the asymmetrical $IMD_3$ characteristic has increased with the increase of two-tone spacing. $IMD_3$ measurement result with maximum 20MHz of the two-tone spacing, shows that the difference between $IMD_3(lower)$ and $IMD_3(upper)$ is about 7dB. And the measured ACLR shows 5dB difference at -4MHz and +4MHz offset from center frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.9
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• pp.944-949
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• 2003

In this paper, the double balance mixer(DBM) for Ku-band LNB using InGaP/GaAs HBT process is suggested for the characteristics of low DC power consumption, low noise figure, low intermodulation distortion and wide dynamic range. The 5 dB conversion gain, 14 dB NF, bandwidth 17.9 GHz and 50.34 dBc IMD are obtained under RF input power of -23 dBm, with bias condition as 3 V and 16 mA. The linearity of InGaP/GaAs HBT, the broad band input matching scheme and the optimization of bias point result in the low IMD, the broad bandwidth and the low power consumption characteristics.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.10C
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• pp.1027-1031
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• 2002

In this paper, the non linear characteristics of HPA (High Power Amplifier) is improved by using predistorter. Predistorter consists of 0 degree and 90 degree couplers, complementary amplifier, shottky diodes, and attenuators. Gain of the Linearized HPA is 54㏈ at 1960㎒ - 1980㎒. IMD (Inter Modulation Distortion) characteristic shows -58㏈c at 39㏈m/tone ⓐ1.23㎒. The IMD performance of this predistorter is improved by 14㏈.

• Journal of Advanced Navigation Technology
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• v.15 no.5
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• pp.789-794
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• 2011

This paper has analyzed the AM-AM and AM-PM characteristics of 7.9 GHz~8.4 GHz X-band TWT used for satellite communication and improved its linearity and IMD performance by using linearizer. The TWT amplifier with the linearizer shows better AM-AM and AM-PM conversion, and has increased 1 dB compression point by 12.3 dB and $2.0^{\circ}/dB$ phase distortion point by 10 dB. The 3rd order intermodulation distortion, IMD3 is measured to be 37.0 dBc that is 16.2 dB improvement at the operating output. This paper also proposed the measurement method of IMD for high power amplifier, and that TWT amplifier can have better linearity and output power by compensating for the AM-PM characteristics.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.171-174
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• 2000

금속간 접촉에서의 Passive IMD는 Contact의 비선형 요인에 의해 발생된다고 알려져 있다. 금속접촉을 이루는 RF Conntctor의 PIMD 측정은 측정환경의 변화로 인해 재현성 있는 측정이 어렵다. 본 논문에서는 접촉력, 온도 및 습도로 인한 접촉조건의 변화에 의해 발생하는 PIMD 특성을 연구하고자 4 종류의 도금 재질을 갖는 어댑터를 설계 및 제작하였다. 제작된 어댑터의 PIMD 측정결과. PIMD 수준이 주로 접촉력 및 온도에 영향을 받으며, 측정환경의 명확한 규정이 PIMD의 측정 및 제어에 필수적임을 확인하였다.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2003.05a
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• pp.92-96
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• 2003

In this paper, 30 W power Amplifier for IMT-2000 repeater was developed gain flatness and the third IMD (Intermodulation distortion) by Microwave absorber. The absorption ability of the absorber is measured up to -10 ㏈ and -4 ㏈ at 3.6 ㎓, 2.3 ㎓ band respectively. Non using absorber power amplifier has the gain over 57 ㏈, the gain flatness of ${\pm}$0.33 ㏈ and the third IMD of 27 ㏈c at 33.3 W output. Otherwise, using absorber power amplifier has the gain over 58㏈, the gain flatness of less than ${\pm}$0.9, the third IMD over 29 ㏈c at the same output power. As a result, the characteristic of the different type show improvement of 1 ㏈ in gain, 0.3 ㏈ in Gain flatness and 1.77 ㏈c in IMD.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.3
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• pp.492-498
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• 2000

When multi-carriers are applied to the high power amplifier(HPA) having nonlinear characteristics, the HPA output has unwanted IMD signals. The IMD signal is noise in the HPA. The magnitude and phase of the main and IMD signal of HPA output are changed as the input signal power is changed. If we know exactly the magnitude and phase characteristics of the main and IMD signal, we can design a more adequate linearizer and understand the characteristics of transistor. In this paper the magnitude and phase of the main and IMD signal of HPA output are measured and analyzed for variation of the input power.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.12-16
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• 2007

In this paper, The 3rd-IMD of class-F power amplifier is improved using CMRC structure in order to remove the parasitic End harmonic at the output load of class-F power amplifier. The total size is very small more than class-F power amplifier using PBG. (Photonicband Gap) structure during improved 3rd-IMD characteristic performance.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.187-190
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• 2005

In this dissertation, a temperature characteristics of the LDMOS is proposed by the method of changing the gate voltage to find the optimum points when the IMD characteristics is changed by the atmosphere temperature. Experimental results have good agreement with the ADS simulation about the 3rd and 5th IMD when the gate voltage is changed with the fixed temperature.