• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.973-976
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• 2004

The results of numerous studies in III-V semiconductors show that sulfur treatment improves the electrical parameters of III-V compound devices. In this article, we examine the effects of sulfidation of HgCdTe surface on the interfacial characteristics of metal-ZnS-HgCdTe structures. Different from sulfidation in III-V material, S can not be act as an impurity because II-S compounds (ZnS, CdS) generally used as passivant for HgCdTe. Our studies of sulfur-treatment on HgCdTe surface show that sulfur agent forms the S- S, II-S bonds at the surface layer. These bonds are very effective to improve the electrical properties of ZnS layer on HgCdTe by reducing the possibility of native oxides formation. After the sulfidation process, MIS capacitors of HgCdTe show great improvement in electrical properties, such as low density of fixed charge and reduced hystereisis width.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.19-19
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• 2003

The injection of spins into nonmagnetic semiconductors has recently attracted great interest due to the potential to create new classes of spin-dependent electronic devices. A recent strategy to achieve control over the spin degree of freedom is based on dilute ferromagnetic semiconductors. Ferromagnetism has been reported in various semiconductor groups including II-Ⅵ, III-V, IV and II-IV,-V$_2$, which will be reviewed. On the other hand, to date the low solubility of magnetic ions in non-magnetic semiconductor hosts and/or low Curie temperature have limited the opportunities. Therefore the search for other promising ferromagnetic semiconducting materials, with high magnetic moments and high Curie temperatures (Tc), is of the utmost importance. In this talk, we also introduce new pure ferromagnetic semiconductors, MnGeP$_2$ and MnGeAs$_2$, exhibiting ferromagnetism and a magnetic moment per Mn at 5K larger than 2.40 ${\mu}$B. The calculated electronic structures using the FLAPW method show an indirect energy gap of 0.24 and 0.06 eV, respectively. We have observed spin injection in MnGeP$_2$ and MnGeAs$_2$ magnetic tunnel junctions through semiconducting barriers.

• The Journal of Korean Academy of Prosthodontics
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• v.40 no.2
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• pp.184-192
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• 2002

The purpose of this study was to investigate the abrasion resistance and surface roughness of conventional dental stones and improved dental stones and newly developed dental stones. Materials included in this study were several dental stones and newly developed dental stone; 2 type III. 6 type IV (including newly developed dental stone). 1 type V Ten specimens for each material, total ninety specimens were made. Each specimen was subjected to 50 complete cycle abrasion under constant load 0.42N at speed or 6mm per sec. The depth after abrasion test was measured for each specimen. Surface roughness before and after abrasion test was compared. The results were as follows ; 1. The resin containing die materials such as Tuff Rock and Resin Rock had superior abrasion resistance. 2. Type IV, V dental stone exhibited greater abrasion resistance than Type III dental stone. 3. The results or the surface roughness showed similar pattern with the abrasion resistance.

• Journal of Information Display
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• v.3 no.1
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• pp.6-10
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• 2002

We have synthesized a new green Ir(III) complex fac-tris-(3-methyl-2-phenyl pyridine)iridium(III) $Ir(mpp)_3$ and fabricated phosphorescent polymer light-emitting device using it as a triplet emissive dopant in PVK. $Ir(mpp)_3$ showed absorption centered at 388 nm corresponding to the $^1MLCT$ transition as .evidenced by its extinction coefficient of the order of $10^3{\cdot}$ From the PL and EL spectra of the $Ir(mpp)_3$ doped PVK film, the emission maximum was observed at 523 nm, due to the radiative decay from the $^3MLCT$ state to the ground state, confirming a complete energy transfer from PVK to $Ir(mpp)_3$. The methyl substitution has probably caused a red shift in the absorption and emission spectrum compared to $Ir(mpp)_3$. The device consisting of a 2 % doped PVK furnished 4.5 % external quantum efficiency at 72 $cd/m^2$ (current density of 0.45 $mA/cm^2$ and drive voltage of 13.9 V) and a peak luminance of 25,000 $cd/m^2$ at 23.4 V (494 $mA/cm^2$). This work demonstrates the impact of the presence of a methyl substituent at the 3-position of the pyridyl ring of 2-phenylpyridine on the photophysical and electroluminescence properties.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.599-603
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• 1999

We have investigated the growth characteristics of thick GaN on Sim substrate with AlN and low temperature GaN buffer layer. The vertical hydride vapor phase epitaxy system with $GaCl_3$ precursor was used for growth of GaN. AlN and GaN buffer layer were deposited on Si substrate to reduce the lattice mismatch and the thermal expansion coefficient mismatch between si and GaN. Optimization of deposition condition for AlN and low temperature GaN buffer layers were carried out. We studied the effects of growth temperature, V/III ratio on the properties of thick GaN. Surface morphology, growth rate and crystallinity of thick GaN were measured using Atomic Force Microscopy (AFM), $\alpha-step$-, Scanning Electron Microscopy (SEM) and X-Ray Diffractometer(XRD).

• The Journal of Korean Academy of Prosthodontics
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• v.41 no.1
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• pp.61-70
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• 2003

The purpose of this study was to investigate the contact angles and wettability of conventional dental stones and improved dental stones and newly developed dental stones on several impression materials. Materials included in this study were several dental stones and newly developed dental stone ; 2 type III stones (Snow Rock, New Diastone), 6 type IV stones(Crystal Rock, Vel Mix, Fuji Rock, Tuff Rock, Resin Rock and newly developed dental stone) and 1 type V stone (Die Keen). Contact angles on the impression materials were measured with contact angle measuring device. Ten specimens for each material, total 180 specimens were made on void entrapment model. The two impression materials (Handae, GC) were used to produce 9 groups of die stone casts form void entrapment model. Voids in the stone casts were counted under a stereoscopic microscope. The grad for the reproduction ability of each materials on the void entrapment model was calculated from the casts by one examiner. From the experiment, the following results were obtained : 1. The newly developed stones showed smallest contact angle. Type III dental stone had larger contact angles than type IV and V stones. Contact angle was much affected by the impression materials. 2. Resin containing die materials such as Tuff Rock and Resin Rock had smallest void number than any other groups. 3. In comparing reproduction parameters, Tuff Rock and Resin Rock presented superior results, while Vel Mix showed lowest reproduction ability.

• Pediatric Infection and Vaccine
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• v.16 no.1
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• pp.47-53
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• 2009

Purpose : This study was performed to investigate the serotype distribution of group B streptococcus (GBS) isolated from pregnant Korean women using molecular methods. Methods : The study materials included 42 GBS isolates obtained from the vagina and anorectum of pregnant women in Goyang, Korea between 2005 and 2006. Four clinical isolates with known serotypes (Ia, Ib, III, and V) were used for validation of molecular serotyping. We used serotype-specific primers for identification of the serotypes (Ia, Ib, III, V, and VI). To determine the ambiguous serotypes by serotype-specific PCR, sequence analysis of the PCR amplicons which had been amplified with GBS-common primers was used. Results : The serotypes determined by the molecular methods agreed with the previously known 4 serotypes (Ia, Ib, III, and V). The serotypes of all 42 isolates were successfully determined by molecular methods. The distribution of the GBS serotype was as follows in order of frequency: serotype III was found in 12 isolates (28.6%), serotype V was found in 11 isolates (26.2%), serotype Ia was found in 11 isolates (26.2%), serotype VI was found in 4 isolates (9.5%), serotype Ib was found in 2 isolates (4.8%), and serotype II was found in 2 isolates (4.8%). Conclusion : Serotypes III, V, and Ia were the most frequently identified serotypes in pregnant Korean women. Molecular serotyping is useful for surveillance of the serotype distribution of GBS in colonized pregnant women and GBS diseases of neonates.

• Environmental Engineering Research
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• v.22 no.2
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• pp.186-192
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• 2017

The carbon paste electrode (CPE) was modified with the pristine bentonite and hybrid material (HDTMA-modified bentonite). The modified-CPEs are then employed as working electrode in an electrochemical detection of As(V) from aqueous solutions using the cyclic voltammetric measurements. Cyclic voltammograms revealed that As(V) showed reversible behavior onto the working electrode. The hybrid material-modified carbon paste electrode showed significantly enhanced electrochemical signal which was then utilized in the low level detection of As(V). Moreover, the studies were conducted at neutral pH conditions. The electrochemical studies were conducted with scan rates (20 to 200 mV/s) to deduce the mechanism of redox processes involved at the electrode surface. The anodic current was linearly increased, increasing the concentration of As(V) from 5.0 to $35.0{\mu}g/g$ using the hybrid material-modified electrode. This provided fairly a good calibration line for As(V) detection. The presence of varied concentrations of As(III) in the determination of total arsenic was studied. The influence of several cations and anions viz., Cu(II), Mn(II), Zn(II), Pb(II), Cd(II), Fe(III), $Cl^-$, $NO_3{^-}$, $PO_4{^{3-}}$, EDTA and glycine in the detection of As(V) from aqueous solution was also studied. Further, in an attempt to simulate the real matrix analysis, the tap water sample was spiked with As(V) and subjected for As(V) detection using the modified-CPE.

• Current Photovoltaic Research
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• v.7 no.3
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• pp.76-84
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• 2019

Silicon heterojunction solar cells (SHJ) have dominated the photovoltaic market up till now but their conversion performance is practically limited to around 26% compared with the theoretical efficiency limit of 29.4%. A silicon based multi-junction devices are expected to overcome this limitation. In this report, we briefly review the state-of-art characteristic of wide-gap materials which has played a role as top sub-cells in silicon based multi-junction solar cells. In addition, we indicate significantly practical challenges and key issues of these multi-junction combination. Finally, we focus to some characteristics of III-V/c-Si tandem configuration which are reaching highly record performance in multi-junction silicon solar cells.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.579-585
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• 2019

In this study, we investigate the effect of Al/N source ratios and growth rates on the growth and structural properties of AlN films on c-plane sapphires by plasma-assisted molecular beam epitaxy. Both growth rates and Al/N ratios affect crystal qualities of AlN films. The full width at half maximum (FWHM) values of ($10{\bar{1}}5$) X-ray rocking curves (XRCs) change from 0.22 to $0.31^{\circ}$ with changing of the Al/N ratios, but the curves of (0002) XRCs change from 0.04 to $0.45^{\circ}$ with changing of the Al/N ratios. This means that structural deformation due to dislocations is slightly affected by the Al/N ratio in the ($10{\bar{1}}5$) XRCs but affected strongly for the (0002) XRCs. From the viewpoint of growth rate, the AlN films with high growth rate (HGR) show better crystal quality than the low growth rate (LGR) films overall, as shown by the FWHM values of the (0002) and ($10{\bar{1}}5$) XRCs. Based on cross-sectional transmission electron microscope observation, the HGR sample with an Al/N ratio of 3.1 shows more edge dislocations than there are screw and mixed dislocations in the LGR sample with Al/N ratio of 3.5.