• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1187-1194
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• 2003

A BCl$_3$/Ne plasma chemistry was used to etch Ga-based (GaAs, AIGaAs, GaSb) and In-based (InGaP, InP, InAs and InGaAsP) compound semiconductors in a Planar Inductively Coupled Plasma (ICP) reactor. The addition of the Ne instead of Ar can minimize electrical and optical damage during dry etching of III-V semiconductors due to its light mass compared to that of Ar All of the materials exhibited a maximum etch rate at BCl$_3$ to Ne ratios of 0.25-0.5. Under all conditions, the Ga-based materials etched at significantly higher rates than the In-based materials, due to relatively high volatilities of their trichloride etch products (boiling point CaCl$_3$ : 201 $^{\circ}C$, AsCl$_3$ : 130 $^{\circ}C$, PCl$_3$: 76 $^{\circ}C$) compared to InCl$_3$ (boiling point : 600 $^{\circ}C$). We obtained low root-mean-square(RMS) roughness of the etched sulfate of both AIGaAs and GaAs, which is quite comparable to the unetched control samples. Excellent etch anisotropy ( > 85$^{\circ}$) of the GaAs and AIGaAs in our PICP BCl$_3$/Ne etching relies on some degree of sidewall passivation by redeposition of etch products and photoresist from the mask. However, the surfaces of In-based materials are somewhat degraded during the BCl$_3$/Ne etching due to the low volatility of InCl$_{x}$./.

• Korean Journal of Agricultural Science
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• v.13 no.2
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• pp.299-310
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• 1986

The ovine squamous cell carcinoma (OSCC)-specific and immunosuppressive properties of OSCC extracts were investigated by using the techniques of lymphocyte blastogenicity, acid dissociation-ultrafiltration and gradient polyacrylamide gel electrophoresis. It was found that OSCC extracts contained two major and one minor protein peaks by Sephadex gel fractionation. Two major peaks bear substantial amount of immunoglobulins, antigen-antibody complex and OSCC-specific fractions, and the minor peak includes immunosuppressive materials. OSCC-specific components were detected at the molecular weights of 10,000 to 100,000 daltons in the major peaks and immunosuppressive materials at the fractions with the molecular weight of 10,000 to 100,000 and < 10,000 daltons in the minor peak. When the fractions were further separated by gradient polyacrylamide gel electrophoresis, the OSCC-specific antigens were found in the slice number 4 to 6 in fraction III, and immunosuppressive materials, in the slice numbers 9 to II in fraction V. The present results were considered to provide a basis for preparation and purification of OSCC-specific and immunosuppressive materials from the crude OSCC extracts.

• Journal of the Korean Society of Costume
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• v.5
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• pp.103-112
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• 1981

In Koryo Dynasty, during the reign of uijong, Choe Yun-ui and others countries collected the royal orders of the Koryo kings and adopted the Tang institutions, and compiled 50 volumes of a book, called "Detailed Ceremonies of Old and New." Recording about clothing, with a special focus on dress and its ornaments of armed vassals, when they attend the king while he is conducting his business. 1) As for the headgear's were the Pokdu, Moja, Kwan, Tumo (official hat to be worn with armors) and Malye (for protection against the cold). There were II kinds of headgear's name in all. 2) As for the clothes, (1) Kongbok (formal costume) (2) Dress, there were 34 kinds of clothes name differented by (i) flowerage on clothes (ii) size of sleeves (iii) color of clothes (iv) fabrics (v) the belt used with the dress. Others were; (3) Baeja (4) Hansam, (5) Poto, and (6) Armor. 3) As for colors of clothes, there were (i) Purple, (ii) Red(Scarlet), (iii) Green, (iv) Blue, (v) Yellow, (vi) Black and (vii) White. 4) As for materials, there were (i) Kum, Ra, Sa (all kinds of silk), (ii) Iron and (iii) Leather. 5) For belts, there were (i) Sockdae, (ii) Hongjung, (iii) Kayeundae, (iv) Dongdokum-dae, (v) Jojung and (vi) Dongshimsokdae.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.73-78
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• 2003

The InP thin films grown by metalorganic chemical vapor deposition (MOCVD) are widely used to optoelectronic devices such as laser diodes, wave-guides and optical modulators. Effects of various parameters controlling film growth rate such as gas-phase reaction rate constant, surface reaction rate constant and mass diffusivity are numerically investigated. Results show that at the upstream region where film growth rate increases with the flow direction, diffusion including thermal diffusion plays an important role. At the downstream region where the growth rate decreases with flow direction, film deposition mechanism is revealed as a mass-transport limited. Mass transport characteristics are also studied using systematic analyses.

• Electrical & Electronic Materials
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• v.21 no.11
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• pp.12-20
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• 2008

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.2
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• pp.2-11
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• 2000

Technologies for high-speed transistors, active devices essential to the fabrication of millimeter wave circuits have developed drastically with the design and processing techniques. The high frequency transistors, made of GaAs or InP related compound semiconductors mainly, are in the form of MODFETs and HBTs. Other than traditional III-V compound semiconductor materials, SiGe and GaN technologies are emerging as viable candidates of millimeter-wave devices. In this paper, basis and applications of millimeter-wave transistors are introduced.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3711-3717
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• 2010

Four orange-red phosphorescent Ir(III) complexes were designed and synthesized based on the benzoylphenylpyridine ligand with a fluorine substituent. Multilayered OLEDs with the device structure, ITO/2-TNATA/NPB/CBP : 8% Ir(III) complexes/BCP/Liq/Al, were fabricated using these complexes as dopant materials. All the devices exhibited orange-red electroluminescence and their electroluminescent properties were quite sensitive to the structural features of the dopants in the emitting layers. Among these, the maximum luminance ($14700\;cd/m^2$ at 14.0 V) was observed in the device containing Ir(III) complex 1 as the dopant. In addition, its luminous, power and quantum efficiency were 11.7 cd/A, 3.88 lm/W and 9.58% at $20\;mA/cm^2$, respectively. The peak wavelength of electroluminescence was 606 nm with CIE coordinates of (0.61, 0.38) at 12.0 V. The device also showed stable color chromaticity with various voltages.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.65-65
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• 2015

In this talk, I will introduce two topics. The first topic is the polymer light emitting diodes (PLEDs) using graphene oxide quantum dots as emissive center. More specifically, the energy transfer mechanism as well as the origin of white electroluminescence in the PLED were investigated. The second topic is the facile synthesis of eco-friendly III-V colloidal quantum dots and their application to light emitting diodes. Polymer (organic) light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nanomaterial without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence (EL) from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. (Sci Rep., 5, 11032, 2015). New III-V colloidal quantum dots (CQDs) were synthesized using the hot-injection method and the QD-light emitting diodes (QLEDs) using these CQDs as emissive layer were demonstrated for the first time. The band gaps of the III-V CQDs were varied by varying the metal fraction and by particle size control. The X-ray absorption fine structure (XAFS) results show that the crystal states of the III-V CQDs consist of multi-phase states; multi-peak photoluminescence (PL) resulted from these multi-phase states. Inverted structured QLED shows green EL emission and a maximum luminance of ~45 cd/m2. This result shows that III-V CQDs can be a good substitute for conventional cadmium-containing CQDs in various opto-electronic applications, e.g., eco-friendly displays. (Un-published results).

• Bulletin of the Korean Chemical Society
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• v.34 no.1
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• pp.167-173
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• 2013

A series of highly efficient red phosphorescent heteroleptic iridium(III) complexes 1-6 containing two cyclometalating 2-(2,4-substitued phenyl)quinoxaline ligands and one chromophoric ancillary ligand were synthesized: (pqx)$_2Ir$(mprz) (1), (dmpqx)$_2Ir$(mprz) (2), (dfpqx)$_2Ir$(mprz) (3), (pqx)$_2Ir$(prz) (4), (dmpqx)$_2Ir$(prz) (5), (dfpqx)$_2Ir$(prz) (6), where pqx = 2-phenylquinoxaline, dfpqx = 2-(2,4-diflourophenyl)quinoxaline, dmpqx = 2-(2,4-dimethoxyphenyl)quinoxaline, prz = 2-pyrazinecarboxylate and mprz = 5-methyl-2-pyrazinecarboxylate. The absorption, emission, electrochemical and thermal properties of the complexes were evaluated for potential applications to organic light-emitting diodes (OLEDs). The structure of complex 2 was also determined by single-crystal X-ray diffraction analysis. Complex 2 exhibited distorted octahedral geometry around the iridium metal ion, for which 2-(2,4-dimethoxyphenyl)quinoxaline N atoms and C atoms of orthometalated phenyl groups are located at the mutual trans and cis-positions, respectively. The emission spectra of the complexes are governed largely by the nature of the cyclometalating ligand, and the phosphorescent peak wavelengths can be tuned from 588 to 630 nm with high quantum efficiencies of 0.64 to 0.86. Cyclic voltammetry revealed irreversible metal-centered oxidation with potentials in the range of 1.16 to 1.89 V as well as two quasi-reversible reduction waves with potentials ranging from -0.94 to -1.54 V due to the sequential addition of two electrons to the more electron-accepting heterocyclic portion of two distinctive cyclometalated C^N ligands.

• Analytical Science and Technology
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• v.24 no.6
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• pp.451-459
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• 2011

Eight coordinated terbium(III) complexes, tris (2-pyrazinecarboxylato)(phenanthroline) terbium(III) [$Tb(pzc)_3$(phen)], tris (5-methyl-2-pyrazinecarboxylato) (phenanthroline) terbium(III) [$Tb(mpzc)_3$(phen)] and tris(2-picolinato) (phenanthroline) terbium(III) [$Tb(pic)_3$(phen)], have been synthesized and characterized by Fourier transform infrared (FT-IR), UV-Visible and X-ray photoelectron spectroscopy. Photoluminescence (PL) spectroscopy shows that these complexes emitted strong green luminescence. When powder samples of the $Tb^{3+}$ complexes are examined using time-resolved spectroscopic analysis, the luminescence lifetimes are found to be 0.87 ms and 1.0 ms, respectively. Thermogravimetric analysis reveals the terbium complexes to have good thermal stability up to $333-379^{\circ}C$. Cyclic voltammetry shows that HOMO-LUMO energy gap of the $Tb^{3+}$ complexes ranges from 4.26~4.41 eV. These values are similar to those obtained from the UV-visible spectra. Overall, the synthesized $Tb^{3+}$ complexes may be useful advanced materials for green light emitting devices.