• Journal of the Korean association of regional geographers
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• v.12 no.4
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• pp.461-474
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• 2006

This paper aims to analyze regional characteristics of unusual temperature events on summer and winter. The major data used in this study are the daily mean temperature of summer (June-August) and winter (December-February) and wind field on 850 hPa height. Regions of unusual temperature are divided into five regions by the monthly frequency of unusual temperature occurrence. The divided regions are following as: the middle east coastal region (I) where the summer unusual high temperature occurrence frequency is highest; the Gyunggi west coastal and northern middle inland region (II) where winter unusual low temperature occurrence frequency is highest and winter unusual high temperature occurrence frequency is low; the western middle and south region (III) where unusual temperature occurrence ratio is not concentrated on specific season; the forest and southern east region (IV) where unusual high temperature is low; and the south coastal and Jeju island region (V) where winter unusual high temperature is highest.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.133-133
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• 2010

3-5족 화합물 반도체를 이용한 집광형 삼중 접합 태양전지는 35% 이상의 광변환 효율로 주목을 받고 있다. 일반적으로 삼중 접합 태양전지는 넓은 영역대의 파장을 흡수하기 위해 밴드갭이 다른 InGaP, GaAs, Ge이 사용된다. 그 중 하부셀은 기계적 강도가 높고 장파장을 흡수할 수 있는 Ge이 사용되는데, p-type Ge 기판위에 III-V 결정막 성장 시 5족 원소가 확산되어 pn접합을 형성하게 된다. 이러한 구조를 가진 Ge 하부셀이 효율적으로 홀-전자 쌍을 형성하기 위해서는 두꺼운 베이스와 얇은 에미터 접합이 필요하다. InGaP의 phosphorus는 낮은 확산계수로 인해 GaAs의 arsenic에 비해 얇은 접합이 형성 가능하며, Ge표면 에칭효과가 더 적다는 장점이 있다. 이를 고려해 우리 연구그룹에서는 metalorganic chemical vapor depostion(MOCVD)을 이용하여 Ge기판위에 성장한 InGaP layer의 특성을 관찰해 보았다. <111>로 $6^{\circ}$ 기울어진 p-type Ge(100) 기판위에 MOCVD를 통해 InGaP layer를 형성하였고, 성장된 layer를 atomic force microscope(AFM)와 high-resolution x-ray diffraction(HRXRD)을 이용하여 표면형상, 조성, 응력상태 등을 각각 관찰하였다. 또한 phosphorus 확산에 의해 형성되는 도핑농도는 electrochemical capacitance-voltage(ECV)을 이용하여 관찰하였다. 성장된 Ge기판위의 InGaP layer의 경우 특징적으로 높이 50 nm, 밑변 길이 $1\;{\mu}m$의 경사진 표면을 관찰할 수 있었으며, 이러한 구조는 TMIn과 TMGa의 비율이 증가 할수록 감소하였다. 따라서 이러한 경사진 형태의 구조는 격자 불일치 때문인 것으로 판단된다. 추가적으로 V/III ratio의 최적화를 통해 1.3 nm의 표면 거칠기를 갖는 InGaP layer를 얻을 수 있었다. ECV를 통해 Ge 하부셀의 pn접합 형성을 관찰한 결과 약 160 nm에서 접합이 형성되는 것을 관찰할 수 있었다. 또한, 같은 성장 조건의 샘플을 1000 초 열처리 후에 접합깊이의 변화를 관찰한 결과 180 nm에서 접합이 관찰되었지만, GaAs의 arsenic에 의한 pn접합은 열처리 후에 그 깊이가 170 nm에서 300 nm로 증가 하였다. 따라서 삼중접합 태양전지의 제작 공정을 고려할 경우 phosphorus에 의한 접합 형성이 Ge 하부셀의 동작 특성에 유리할 것으로 판단된다.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.599-603
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• 1999

We have investigated the growth characteristics of thick GaN on Sim substrate with AlN and low temperature GaN buffer layer. The vertical hydride vapor phase epitaxy system with $GaCl_3$ precursor was used for growth of GaN. AlN and GaN buffer layer were deposited on Si substrate to reduce the lattice mismatch and the thermal expansion coefficient mismatch between si and GaN. Optimization of deposition condition for AlN and low temperature GaN buffer layers were carried out. We studied the effects of growth temperature, V/III ratio on the properties of thick GaN. Surface morphology, growth rate and crystallinity of thick GaN were measured using Atomic Force Microscopy (AFM), $\alpha-step$-, Scanning Electron Microscopy (SEM) and X-Ray Diffractometer(XRD).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.232-232
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• 2010

Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

• Journal of the korean academy of Pediatric Dentistry
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• v.45 no.3
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• pp.290-298
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• 2018

This study aimed to evaluate surface morphology and resin tag penetration of resin infiltration into primary anterior teeth after enamel deproteinization with sodium hypochlorite (NaOCl) prior to phosphoric acid ($H_3PO_4$) etching. Ninety primary anterior teeth with non-cavitated caries lesion were devided five groups according to enamel pretreatment as follows, group I-15% hydrochloric acid (HCl) 2min. ; group II-5.25% NaOCl 1min., 35% $H_3PO_4$ 1min. ; group III-5.25% NaOCl 2min., 35% $H_3PO_4$ 1min. ; group IV-5.25% NaOCl 1min., 35% $H_3PO_4$ 2min. ; group V-5.25% NaOCl 2min., 35% $H_3PO_4$ 2min. Fifteen teeth were examined etched surface structure using field emission-scanning electron microscope. Seventy five teeth were infiltrated with resin, maximum penetration depth and percentage penetration were analysed using dual fluorescence confocal microscopy. As the application time of NaOCl increased, ratio of enamel type I, II were increased. Percentage penetration (PP) was higher in group V than group II, III (p < 0.05). PP of group IV, V did not show any differences. Non-cavitated caries of primary anterior teeth can be treated with resin infiltration. Enamel deproteinization with NaOCl prior to 35% $H_3PO_4$ etching could be an alternative of 15% HCl etching in resin infiltration.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.180-180
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• 2012

Heteroepitaxial GaN nano- and micro-rods (NMRs) are one of the most promising structures for high performance optoelectronic devices such as light emitting diodes, lasers, solar cells integrated with Si-based electric circuits due to their low dislocation density and high surface to volume ratio. However, heteroepitaxial GaN NMRs growth using a metal-organic vapor phase epitaxy (MOVPE) machine is not easy due to their long surface diffusion length at high growth temperature of MOVPE above $1000^{\circ}C$. Recently some research groups reported the fabrication of the heteroepitaxial GaN NMRs by using MOVPE with vapor-liquid-solid (VLS) technique assisted by metal catalyst. However, in the case of the VLS technique, metal catalysts may act as impurities, and the GaN NMRs produced in this mathod have poor directionallity. We have successfully grown the vertically well aligned GaN NMRs on Si (111) substrate by means of self-catalystic growth methods with pulsed-flow injection of precursors. To grow the GaN NMRs with high aspect ratio, we veried the growth conditions such as the growth temperature, reactor pressure, and V/III molar ratio. We confirmed that the surface morphology of GaN was strongly influenced by the surface diffusion of Ga and N adatoms related to the surrounding environment during growth, and we carried out theoretical studies about the relation between the reactor pressure and the growth rate of GaN NMRs. From these results, we successfully explained the growth mechanism of catalyst-free and mask-free heteroepitaxial GaN NMRs on Si (111) substrates. Detailed experimental results will be discussed.

• Journal of the Korean Geotechnical Society
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• v.20 no.2
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• pp.15-26
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• 2004

Based on an estimating method for post-cyclic strength and stiffness with cyclic triaxial tests proposed by one of the authors, cyclic Direct Simple Shear (DSS) tests were carried out to confirm whether the method can be adapted to DSS test on fine-grained soils: silty clay, plastic silt, and non-plastic silt. Results from cyclic and post-cyclic DSS tests were interpreted by a modified method as adopted for cyclic and post-cyclic triaxial tests. In particular, influence of plasticity index for fine-grained soils and initial static shear stress (ISSS) was emphasised. Findings obtained from the present study are: (i) liquefaction strength ratio of fine-grained soils decreases with decreasing plasticity index and increasing ISSS; (ii) plasticity index and ISSS did not markedly influence relation between equivalent cyclic stiffness and shear strain relations; (iii) the higher the plasticity index of fine-grained soils is, the less the strength ratio decreases with increment of a normalcies excess pore water pressure (NEPWP); (iv) stiffness ratio of plastic silt has large activity decrease rapidly with increasing excess pore water pressure; and (v) post-cyclic strength and stiffness results from DSS tests agree well with those predicted by the method modified from a procedure used for triaxial test results.

• Journal of the Korea institute for structural maintenance and inspection
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• v.20 no.4
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• pp.120-127
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• 2016

Due to the enlargement and high-rise of reinforced concrete structure, the application of high functional material is required. However, high-strength bar is recently introduced to the country and the material is insufficient to measure the variation of quantity of rebar quantitatively when using high-strength bar. For these reasons, this study is to provide useful data in cost decision making when applying high-strength bar at a stage of architectural project planning. For residence-commerce complex buildings, we set up six types of conditions such as in case of using only rebar, in case of using only high-strength bar, in case of using rebar mixed with high-strength bar and so on. With the standard of study model 1 that applies only SD400 regardless of rebar diameter, the analyzed result of rebar variation and the cost change of construction in other study model is as follows. When the rebar amount and cost in study model I was 100%, each ratio was 88.3% and 90.5% in study model II, 80.2% and 83.4% in study model III, 91.9% and 93.5% in study model IV, 88.9% and 87.7% in study model V and 82.4% and 85.5% in study model VI. Therefore, in case of rebar amount and construction cost, study model III was evaluated as the best that was applied only SD600.

• The Bulletin of The Korean Astronomical Society
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• v.41 no.2
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• pp.34.1-34.1
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• 2016

The ultra hard X-ray band (14-195 keV) provides an important and unbiased way to understand black hole growth and relationship to the host galaxy. The Burst Alert Telescope (BAT) instrument on the Swift satellite has surveyed sky to unprecedented sensitivity, improving the number of known hard X-ray sources by more than a factor of 20 to 836 nearby AGN. The BAT AGN Spectroscopic Survey (BASS) is a study for the first large (N>600) and complete sample of ultra hard X-ray selected AGN with optical spectroscopy. In this talk, I present the observed relationship between black hole mass, bolometric luminosity, and Eddington ratio with optical emission line ratios. We show that [NII]/Ha ratio exhibits a significant correlation with Eddington ratio. We propose that the [NII]/Ha ratio is a useful indicator of Eddington ratio with 0.6 dex of scatter, and that it can be used to measure Eddington ratio and thus black hole mass from the measured bolometric luminosity, even for high redshift obscured AGN.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.187-187
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• 2013

양자점(Quuantum dot, QD)은 0차원 특성을 가지는 구조로 양자 구속 효과로 인하여 bulk와 는 다른 구조적, 광학적, 전기적 특성을 가지고 있다. InAs QD는 size와 barrier의 bandgap 조절을 이용하여 쉽게 bandgap을 바꿀 수 있는 장점이 있어 solar cell, semiconductor laser diode, infrared photodetector 등으로 많은 연구가 이루어지고 있다. 일반적으로 Stranski-Krastanov (SK) mode로 성장한 InAs QD는 보통 GaAs epilayer와의 lattice mismatch (7%)를 이용하여 성장을 하고 이로 인하여 strain을 가지고 있고 QD의 density와 stack이 높을수록 strain이 커진다. 하지만 sub-monolayer (SML) QD 같은 경우 wetting layer가 생기는 지점인 1.7 ML이하에서 성장되는 성장 방식으로 SK-QD보다는 작은 strain을 가지게 된다. 또 QD의 size가 작아 SK-QD보다 큰 bandgap을 가지고 있다. 본 연구에서는 분자선 에피택시(molecular beam epitaxy, MBE)를 이용하여 semi-insulating GaAs substrate 위에 InAs QD를 0.5/1/1.5/1.7/2/2.5 monolayer로 성장을 하였다. GaAs과 InAs의 성장온도와 성장속도는 각각 $590^{\circ}C$, 0.8 ML/s와 $480^{\circ}C$, 0.2 ML/s로 성장을 하였으며 적층사이의 interruption 시간은 10초로 고정하였고 10주기를 성장하였다. Photoluminescence (PL)측정 결과 SML-QD는 size에 따라서 energy가 1.328에서 1.314 eV로 약간 red shift를 하였고 SK-QD의 경우 1.2 eV의 energy정도로 0.1 eV이상 red shift 하였다. 이는 QD size에 의하여 energy shift가 있다고 사료된다. 또 wetting layer의 경우 1.41 eV의 energy를 가지는 것으로 확인 하였다. SML-QD는 SK-QD 보다 반치폭(full width at half maximum, FWHM)이 작은 것은 확인을 하였고 strain field의 감소로 해석된다. 하지만 SML-QD의 경우 SK-QD보다 상대적으로 작은 PL intensity를 가지고 있었다. 이를 개선하기 위해서는 보다 높은 QD density를 요구하게 되는데 growth temperature, V/III ratio, growth rate 등을 변화주어서 연구할 계획이다.