• 한국식품영양과학회지
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• 제46권10호
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• pp.1195-1204
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• 2017

본 연구는 애호박, 쥬키니, 단호박 및 늙은호박 조리방법에 따른 무기성분 변화를 확인하고자 하였다. 조리방법은 데치기, 전자레인지 및 찌기를 이용하였으며, 조리시간은 3분, 5분 및 10분으로 설정하였다. 설정된 시간에 따라 3가지 조리방법을 이용하여 조리한 후 건조하였다. 건조된 시료는 분쇄 후 microwave법을 이용하여 분해하였으며, 다량 무기성분은 ICP-OES로, 미량 무기성분은 ICP-MS를 이용하여 분석하였다. 4종의 호박에 함유된 다량 무기성분은 칼륨, 인, 칼슘, 마그네슘, 황, 철, 아연, 나트륨 순으로 확인되었으며, 미량 무기성분은 망간, 구리, 루비듐, 바륨, 니켈, 크롬, 갈륨, 코발트, 리튬, 바나듐, 셀레늄 순으로 검출되었다. 4종의 호박에 함유된 무기성분은 데치기, 전자레인지 조리 및 찌기에서 모두 감소하였으며, 데치는 조리에서 가장 많은 감소를 보였다. 조리시간에 따른 무기성분의 함량 변화는 조리시간이 증가할수록 낮은 함량을 보였으며, 5분과 10분에서 큰 차이를 확인하였다. 미량 무기성분의 함량은 조리방법과 조리시간에 따른 큰 변화를 확인할 수 없었다. 호박의 종류에 따른 무기성분의 조성은 비슷하였으며, 무기성분의 함량은 약간의 차이를 나타내었다. 애호박과 늙은호박의 무기성분은 찌는 조리법에서 높은 잔존율을 보였으며, 쥬키니와 단호박은 전자레인지 조리 시 가장 높은 잔존율을 나타내었다. 결과적으로 조리방법과 시간은 호박의 무기성분 잔존량에 영향을 주는 것으로 확인되었다.

• 한국진공학회지
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• 제6권3호
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• pp.287-292
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• 1997

본 실험은 고밀도 플라즈마원인 inductively coupled plasma(ICP)를 이용하여 실리카 도파로의 코아를 형성하고자 하였다. $CF_4/CHF_3$유량비, bias power 및 source power 등의 변화에 따른 산화막의 식각 특성 즉 식각 속도, 식각 단면 및 식각된 표면의 거칠기 등의 변화를 검토하였다. 또한 single Langmuir probe 및 optical emission spectroscopy(OES)를 이용하여, 식각 변수에 따른 ICP의 플라즈마 특성을 관찰하였다. 이상의 결과를 토대로, $SiO_2-P_2O_5$로 구성된 실리카 도파로의 코아(core)층을 형성하였고, 이때 최적화된 식각 조건 에서 식각 속도는 380nm/min이고, 마스크 층으로 사용된 Al(Si 1%)와 산화막과의 식각 선 택비는 30:1이상이였다. 형성된 실리카 도파로를 scanning electron microscopy(SEM)으로 관찰한 결과, 코아층의 식각 단면이 수직하고 패턴 선폭의 손실이 거의 없음을 확인하였다.

• Nuclear Engineering and Technology
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• 제49권3호
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• pp.562-568
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• 2017

Background: The chemical characterization of metallic alloys and oxides is conventionally carried out by wet chemical analytical methods and/or instrumental methods. Instrumental neutron activation analysis (INAA) is capable of analyzing samples nondestructively. As a part of a chemical quality control exercise, Zircaloys 2 and 4, nimonic alloy, and zirconium oxide samples were analyzed by two INAA methods. The samples of alloys and oxides were also analyzed by inductively coupled plasma optical emission spectroscopy (ICP-OES) and direct current Arc OES methods, respectively, for quality assurance purposes. The samples are important in various fields including nuclear technology. Methods: Samples were neutron irradiated using nuclear reactors, and the radioactive assay was carried out using high-resolution gamma-ray spectrometry. Major to trace mass fractions were determined using both relative and internal monostandard (IM) NAA methods as well as OES methods. Results: In the case of alloys, compositional analyses as well as concentrations of some trace elements were determined, whereas in the case of zirconium oxides, six trace elements were determined. For method validation, British Chemical Standard (BCS)-certified reference material 310/1 (a nimonic alloy) was analyzed using both relative INAA and IM-NAA methods. Conclusion: The results showed that IM-NAA and relative INAA methods can be used for nondestructive chemical quality control of alloys and oxide samples.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.22-25
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• 2004

In this study, BST thin films were etched with inductively coupled $CF_4/(Cl_2+Ar)$ plasmas. The etch characteristics of BST thin films as a function of $CF_4/(Cl_2+Ar)$ gas mixtures were analyzed using quadrupole mass spectrometry (QMS) and optical emission spectroscopy (OES). The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of $CF_4$ to the $Cl_2/Ar$ mixture increased chemical effect. The optimum condition appears to be under a 10 % $CF_4/(Cl_2+Ar)$ gas mixture in the present work.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.339-342
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• 1998

Plasma etching of photoresist needs high etch rate, good uniformity and rae, good uniformity and low damage in low cost. ICP asher is expected to satisfy these requriement for next eneration semiconductor devices. ICPsimulator has been used to design the ashing chamber to redcue the development time and cost, and its results have been verified by QMS, OES and langmuir probe measurments. Plasma characteristics are monitored in terms of RF power and chamber pressure.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.290-293
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• 2000

Low frequency(<100Hz) weak magnetic field(<20gauss) is applied axially to an inductively coupled oxygen plasma(ICP), and its plasma characteristics are monitored by OES(Optical Emission Spectroscopy) and Langmuir probe. It is found that periodic magnetic field enhances ashing rate by 25％ and improves its uniformity upto 4.5％ over 8" wafer. From electron energy distribution function, both low and high energy electrons are identified and relative abundancy is found to be controlled by the applied frequency. Moreover, it is observed that ionization and dissociation species are varied with applied frequency. We insert an aluminium baffle in the chamber to get better uniformity and less plasma damage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.863-865
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• 2001

In this study, RuO$_2$thin films were etched in inductively coupled $O_2$plasma. Etching characteristics of RuO$_2$thin films including etch rate and selectivity were evaluated as a function of rf power in $O_2$plasma and gas mixing ratio in $O_2$/Ar plasma. In $O_2$ plasma, the etch rate of RuO$_2$thin film increases as rf power increases. In $O_2$/Ar plasma, the etch rate of RuO$_2$thin film increases up to 10% Ar, but decrease with furthermore increasing Ar mixing ratio. The enhanced etch rate can be obtained with increasing rf power and small addition of Ar gas.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.179-179
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• 2012

Low pressure radio-frequency glow discharges are investigated using theoretical modeling and various experimental diagnostic methods. In the calculations, global models and transformer models are developed to understand the chemical kinetics as well as the electrical properties such as the effective collision frequency, the heating mechanism and the power transferred to the plasma electrons. In addition, Boltzmann equation solver is used to compensate the effect of the electron energy distribution function (EEDF) shape in the global model, and the general expression of energy balance for non-Maxwellian electrons is developed. In the experiments, a number of traditional plasma diagnostic methods are used to compare with calculated results such as Langmuir probe, optical emission spectroscopy (OES), optical absorption spectroscopy (OAS) and two-photon absorption laser-induced fluorescence (TALIF). These theoretical and experimental methods are applied to understand several interesting phenomena in low pressure ICP discharges. The chemical and physical properties of low pressure ICP discharges are described and the applications of these methods are discussed.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.181-182
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• 2012

본 연구에서는 반도체 기술의 핵심으로 알려있는 플라즈마 표면 처리 공정을 이용하여 인위적으로 그래핀과 기능기 반응을 통한 도핑효과를 일으켜, 전계효과(Electric Field Effect)를 인가하였을 때 그래핀 내에서 발생하는 Electron & Hole carrier 들의 accumulation & Depletion 효과에 의한 Charge Density 변화를 Graphene Field Effect Transistors (GFETs) 소자의 전기적 특성 변화를 확인하였다. 특히, 그래핀 내 Conduction of electron을 높이기 위하여, $N_2+H_2$ 가스 조합을 플라즈마 방전가스로 사용하였으며, Optical Emission Spectroscopy (OES) 및 Langmuir-probe 측정을 통하여 합성가스의 ICP 방전 상태 및 효과를 예측하였다.

• 한국표면공학회지
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• 제38권2호
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• pp.73-78
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• 2005

A real-time monitoring of ICP(inductively coupled plasma) assisted magnetron sputtering of MgO was carried out using a QMS(quadrupole mass spectrometer), an OES(optical emission spectrometer), and a digital oscilloscope with a high voltage probe and a current monitor. At the time of ICP ignition, the most distinct impurity was OH emission (308.9 nm) which was dissociated from water molecules. For reactive deposition oxygen was added to Ar and the OH emission intensity was reduced abruptly When the discharge voltage was regulated by a PID controller from 240V(metallic mode) to 120V(oxide mode), the emission intensity from Mg (285.2 nm) changed proportionally to the discharge voltage, but the intensity of Ar I(811.6 nm) was constant. At 100V of discharge voltage, Mg sputtering was almost stopped. Emissions from Ar I(420.1 nm) and Mg I were dropped down to 1/10, but Ar I(811.6 nm) didn't change. And the emission from atomic oxygen (O I, 777.3 nm) was increased to 10 times. These results are compatible with those from QMS study.